MMBT5551 [DIOTEC]
Surface Mount General Purpose Si-Epi-Planar Transistors; 表面贴装通用硅外延平面型晶体管
| 型号： | MMBT5551 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface Mount General Purpose Si-Epi-Planar Transistors |
| 文件： | 总2页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5550 / MMBT5551
MMBT5550 / MMBT5551
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
NPN
NPN
Version 2006-05-09
Power dissipation – Verlustleistung
250 mW
2.9±0.1
1.1
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
0.4
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT5550
MMBT5551
160 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
140 V
160 V
180 V
6 V
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 1 mA, VCE = 5 V
MMBT5550
MMBT5551
hFE
hFE
60
80
–
–
–
–
IC = 10 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
MMBT5550
MMBT5551
hFE
hFE
60
80
–
–
250
250
MMBT5550
MMBT5551
hFE
hFE
20
30
–
–
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA
MMBT5550
MMBT5551
VCEsat
VCEsat
–
–
–
–
0.15 V
0.15 V
IC = 50 mA, IB = 5 mA
MMBT5550
MMBT5551
VCEsat
VCEsat
–
–
–
–
0.25 V
0.20 V
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBT5550 / MMBT5551
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
MMBT5550
MMBT5551
VBEsat
VBEsat
–
–
–
–
1.0 V
1.0 V
IC = 50 mA, IB = 5 mA
MMBT5550
MMBT5551
VBEsat
VBEsat
–
–
–
–
1.2 V
1.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 100 V, (E open)
VCB = 120 V, (E open)
MMBT5550
MMBT5551
ICBO
ICBO
–
–
–
–
100 nA
50 nA
VCB = 100 V, Tj = 100°C, (E open)
VCB = 120 V, Tj = 100°C, (E open)
MMBT5550
MMBT5551
ICBO
ICBO
–
–
–
–
100 µA
50 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open)
IEBO
–
–
–
–
–
50 nA
300 MHz
6 pF
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 10 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
fT
100 MHz
CCBO
–
–
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
30 pf
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30 Hz ... 15 kHz
MMBT5550
MMBT5551
F
F
–
–
–
–
10 dB
8 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
MMBT5400 / MMBT5401
Marking - Stempelung
MMBT5550 = 1F
MMBT5551 = 3S
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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