P4KE68C [DIOTEC]
Trans Voltage Suppressor Diode, 400W, 55.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN;
| 型号： | P4KE68C |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Trans Voltage Suppressor Diode, 400W, 55.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN 局域网 二极管 |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P4KE6.8 ... P4KE440CA
P4KE6.8 ... P4KE440CA
Unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden
Version 2013-12-19
Peak pulse power dissipation
Maximale Verlustleistung
400 W
Nominal breakdown voltage
Nominale Abbruch-Spannung
6.8...440 V
Ø 3±0.05
Plastic case
DO-15
Kunststoffgehäuse
(DO-204AC)
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Ø 0.8±0.05
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in ammo-Pack
Dimensions - Maße [mm]
For bidirectional types (add suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Grenz- und Kennwerte
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C
TA = 75°C
TA = 25°C
PPPM
PM(AV)
IFSM
400 W 1)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
1 W 2)
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
40 A 3)
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
IF = 25 A
VBR ≤ 200 V
VBR > 200 V
VF
VF
< 3.0 V 3)
< 6.5 V 3)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
Thermal resistance junction to ambient air
RthA
< 45 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to leadsl
RthL
< 15 K/W
Wärmewiderstand Sperrschicht – Anschlussdraht
1
Non-repetitive pulse see curve IPP = f (t) / PPP = f (r)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
Unidirectional diodes only – Nur für unidirektionale Dioden
2
3
© Diotec Semiconductor AG
http://www.diotec.com/
1
P4KE6.8 ... P4KE440CA
Maximum ratings
Grenzwerte
Type
Typ
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
*) at / bei IT = 10 mA
Stand-off voltage Max. rev. current
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
Sperrspannung
Max. Sperrstrom
at / bei VWM
VBR [V]
VWM [V]
ID [µA]
VC [V]
IPPM [A]
P4KE6.8
P4KE6.8A
P4KE7.5
P4KE7.5A
P4KE8.2
P4KE8.2A
P4KE9.1
P4KE9.1A
P4KE10
6.8 ± 10%
6.12...7.48 *)
6.45...7.14 *)
6.75...8.25 *)
7.13...7.88 *)
7.38...9.02 *)
7.79...8.61 *)
8.19...10.0
8.65...9.55
9.0...11.0
5.5
5.8
1000
1000
500
500
200
200
50
50
10
10
5
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
38.0
40.0
35.0
37.0
33.0
34.0
30.0
31.0
28.0
29.0
26.0
27.0
24.0
25.0
22.0
23.0
19.0
21.0
17.8
18.6
16.0
16.5
14.0
15.0
13.0
13.7
12.0
12.6
10.7
11.0
9.6
6.8 ± 5%
7.5 ± 10%
7.5 ± 5%
8.2 ± 10%
8.2 ± 5%
9.1 ± 10%
9.1 ± 5%
10 ± 10%
10 ± 5%
11 ± 10%
11 ± 5%
12 ± 10%
12 ± 5%
13 ± 10%
13 ± 5%
15 ± 10%
15 ± 5%
16 ± 10%
16 ± 5%
18 ± 10%
18 ± 5%
20 ± 10%
20 ± 5%
22 ± 10%
22 ± 5%
24 ± 10%
24 ± 5%
27 ± 10%
27 ± 5%
30 ± 10%
30 ± 5%
33 ± 10%
33 ± 5%
36 ± 10%
36 ± 5%
39 ± 10%
39 ± 5%
43 ± 10%
43 ± 5%
47 ± 10%
47 ± 5%
51 ± 10%
51 ± 5%
6.0
6.4
6.6
7.0
7.3
7.7
8.1
P4KE10A
P4KE11
9.5...10.5
8.5
9.9...12.1
8.9
P4KE11A
P4KE12
10.5...11.6
10.8...13.2
11.4...12.6
11.7...14.3
12.4...13.7
13.5...16.5
14.3...15.8
14.4...17.6
15.2...16.8
16.2...19.8
17.1...18.9
18.0...22.0
19.0...21.0
19.8...24.2
20.9...23.1
21.6...26.4
22.8...25.2
24.3...29.7
25.7...28.4
27.0...33.0
28.5...31.5
29.7...36.3
31.4...34.7
32.4...39.6
34.2...37.8
35.1...42.9
37.1...41.0
38.7...47.3
40.9...45.2
42.3...51.7
44.7...49.4
45.9...56.1
48.5...53.6
9.4
5
9.7
5
P4KE12A
P4KE13
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
5
5
P4KE13A
P4KE15
5
5
P4KE15A
P4KE16
5
5
P4KE16A
P4KE18
5
5
P4KE18A
P4KE20
5
5
P4KE20A
P4KE22
5
5
P4KE22A
P4KE24
5
5
P4KE24A
P4KE27
5
5
P4KE27A
P4KE30
5
5
P4KE30A
P4KE33
5
10.0
8.8
5
P4KE33A
P4KE36
5
9.0
5
8.0
P4KE36A
P4KE39
5
8.4
5
7.4
P4KE39A
P4KE43
5
7.7
5
6.7
P4KE43A
P4KE47
5
7.0
5
6.2
P4KE47A
P4KE51
5
6.4
5
5.7
P4KE51A
5
6.0
2
http://www.diotec.com/
© Diotec Semiconductor AG
P4KE6.8 ... P4KE440CA
Maximum ratings
Grenzwerte
Type
Typ
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
*) at / bei IT = 10 mA
Stand-off voltage Max. rev. current
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
Sperrspannung
Max. Sperrstrom
at / bei VWM
VBR [V]
VWM [V]
ID [µA]
VC [V]
IPPM [A]
P4KE56
56 ± 10%
56 ± 5%
50.4...61.6
53.2...58.8
55.8...68.8
58.9...65.1
61.2...74.8
64.6...71.4
67.5...82.5
71.3...78.8
73.8...90.2
77.9...86.1
81.9...100
86.5...95.5
90.0...110
95.0...105
99.0...121
105...116
108...132
114...126
117...143
124...137
135...165
143...158
144...176
152...168
153...187
162...179
162...198
171...189
180...220
190...210
198...242
209...231
225...275
237...263
270...330
285...315
315...385
332...368
360...440
380...420
396...484
418...462
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
81
5.2
5.4
4.7
5.0
4.2
4.5
3.8
4.0
3.5
3.7
3.2
3.3
2.9
3.0
2.6
2.7
2.4
2.5
2.2
2.3
1.9
2.0
1.8
1.9
1.7
1.8
1.6
1.7
1.4
1.5
1.2
1.3
1.1
1.2
0.97
1.0
0.83
0.87
0.73
0.76
0.66
0.69
P4KE56A
P4KE62
77
62 ± 10%
62 ± 5%
89
P4KE62A
P4KE68
85
68 ± 10%
68 ± 5%
98
P4KE68A
P4KE75
92
75 ± 10%
75 ± 5%
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
P4KE75A
P4KE82
82 ± 10%
82 ± 5%
P4KE82A
P4KE91
91 ± 10%
91 ± 5%
P4KE91A
P4KE100
P4KE100A
P4KE110
P4KE110A
P4KE120
P4KE120A
P4KE130
P4KE130A
P4KE150
P4KE150A
P4KE160
P4KE160A
P4KE170
P4KE170A
P4KE180
P4KE180A
P4KE200
P4KE200A
P4KE220
P4KE220A
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE400A
P4KE440
P4KE440A
100 ± 10%
100 ± 5%
110 ± 10%
110 ± 5%
120 ± 10%
120 ± 5%
130 ± 10%
130 ± 5%
150 ± 10%
150 ± 5%
160 ± 10%
160 ± 5%
170 ± 10%
170 ± 5%
180 ± 10%
180 ± 5%
200 ± 10%
200 ± 5%
220 ± 10%
220 ± 5%
250 ± 10%
250 ± 5%
300 ± 10%
300 ± 5%
350 ± 10%0
350 ± 5%
400 ± 10%
400 ± 5%
440 ± 10%
440 ± 5%
© Diotec Semiconductor AG
http://www.diotec.com/
3
P4KE6.8 ... P4KE440CA
120
[%]
tr = 10 µs
100
100
[%]
80
80
60
60
IPPM/2
PPPM/2
40
40
IPP
IPP
20
20
PPP
PPP
0
tP
0
0
1
2
3
[ms] 4
0
TA
100
150
50
[°C]
Peak pulse power/current vs. ambient temperature1)
10/1000µs - pulse waveform
10/1000µs - Impulsform
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1)
1
102
[kW]
10
1
PPP
0.1
0.1µs
tP
1µs
10µs
100µs
1ms
10ms
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
The range of type numbers is graded to the international E 24 standard. The standard tolerance of the
breakdown voltage for each type is ± 10%. Suffix “A” denotes a tolerance of ± 5% for the breakdown
voltage.
e.g.:
P4KE51C = bidirectional diode, VBR = 51 V (± 10%), VWM ≥ 41.3 V at ID = 5 μA
P4KE9.1A = unidirectional diode, VBR = 9.1 V (± 5%), VWM ≥ 7.7 V at ID = 50 μA
Die Abstufung der Typen innerhalb der Reihe entspricht dem internationalen E 24-Standard. Die Toleranz der
Abbruchspannung jedes einzelnen Typs beträgt in der Standardausführung ± 10%. Suffix “A” kennzeichnet
eine Toleranz der Abbruchspannung von ± 5%.
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
4
http://www.diotec.com/
© Diotec Semiconductor AG
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