P6SMB350CA [DIOTEC]
SMD Transient Voltage Suppressor Diodes;型号: | P6SMB350CA |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | SMD Transient Voltage Suppressor Diodes 局域网 IOT 光电二极管 |
文件: | 总3页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
P6SMB220 ... P6SMB550CA
P6SMB220 ... P6SMB550CA
PPPM = 600 W
PM(AV) = 5.0 W
Tjmax = 150°C
VWM = 175 ... 495 V
VBR = 220 ... 550 V
SMD Transient Voltage Suppressor Diodes
SMD Spannungs-Begrenzer-Dioden
Version 2017-01-20
Typical Applications
Over-voltage protection
ESD protection
Typische Anwendungen
Schutz gegen Überspannung
ESD-Schutz
~ SMB / ~ DO-214AA
5.4± 0.5
Free-wheeling diodes
Commercial grade 1)
Freilauf-Dioden
Standardausführung 1)
Features
Besonderheiten
1.1
0.15
Uni- and Bidirectional versions
Peak pulse power of 600 W
(10/1000 µs waveform)
Very fast response time
Further available: P6SMBJ5.0...170CA
having VWM = 5.0 ... 170 V
Compliant to RoHS, REACH,
Conflict Minerals 1)
Uni- und Bidirektionale Versionen
600 W Impuls-Verlustleistung
(10/1000 µs Strom-Impuls)
Sehr schnelle Ansprechzeit
Auch erhältlich: P6SMBJ5.0...170CA
mit VWM = 5.0 ... 170 V
Type
Typ
R
Konform zu RoHS, REACH,
4.6± 0.5
V
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Dimensions - Maße [mm]
Taped and reeled
Weight approx.
3000 / 13“
0.1 g
Gegurtet auf Rolle
Gewicht ca.
Type Code = VBR. Cathode mark
only at unidirectional types
Case material
UL 94V-0
260°C/10s
MSL = 1
Gehäusematerial
Typ-Code = VBR. Kathoden-Markierung
nur bei unidirektionalen Typen
Solder & assembly conditions
Löt- und Einbaubedingungen
For bidirectional types (suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (mit Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings 2)
Grenzwerte 2)
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
PPPM
600 W 3)
5 W
Steady state power dissipation – Verlustleistung im Dauerbetrieb
TT = 75°C
PM(AV)
Peak forward surge current
Stoßstrom in Fluss-Richtung
Half sine-wave
Sinus-Halbwelle
60 Hz (8.3 ms) IFSM
100 A 4)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Characteristics
Kennwerte
Max. instantaneous forward
voltage Augenblickswert der Durchlass-Spannung
< 3.0 V 4)
IF = 25 A VBR ≤ 550 V
VF
Thermal resistance junction to ambient – Wärmewiderstand Sperrschicht – Umgebung
Thermal resistance junction to terminal – Wärmewiderstand Sperrschicht − Anschluss
RthA
RthT
< 45 K/W 5)
< 15 K/W
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
Non-repetitive pulse see curve IPP = f (t) / PPP = f (t)
2
3
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)
4
5
Unidirectional diodes only – Nur für unidirektionale Dioden
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
P6SMB220 ... P6SMB550CA
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Type
Typ
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
Stand-off
voltage
Max. rev. current
Max. Sperrstrom Max. Begrenzer-Spannung
Max. clamping voltage
Sperrspannung
at / bei VWM
at / bei IPPM (10/1000 µs)
unidirectional bidirectional
VBR [V]
VWM [V]
ID [µA]
VC [V]
IPPM [A]
P6SMBJ5.0 ... P6SMBJ170CA
VWM = 5.0 ... 170V
P6SMB220
P6SMB220A
P6SMB250
P6SMB250A
P6SMB300
P6SMB300A
P6SMB350
P6SMB350A
P6SMB400
P6SMB400A
P6SMB440
P6SMB440A
P6SMB480
P6SMB480A
P6SMB530
P6SMB530A
P6SMB550
P6SMB550A
P6SMB220C
P6SMB220CA
P6SMB250C
P6SMB250CA
P6SMB300C
P6SMB300CA
P6SMB350C
P6SMB350CA
P6SMB400C
P6SMB400CA
P6SMB440C
P6SMB440CA
P6SMB480C
P6SMB480CA
P6SMB530C
P6SMB530CA
P6SMB550C
P6SMB550CA
220 ± 10%
220 ± 5%
250 ± 10%
250 ± 5%
300 ± 10%
300 ± 5%
350 ± 10%
350 ± 5%
400 ± 10%
400 ± 5%
440 ± 10%
440 ± 5%
480 ± 10%
480 ± 5%
530 ± 10%
530 ± 5%
550 ± 10%
550 ± 5%
198...242
209...231
225...275
237...263
270...330
285...315
315...385
332...368
360...440
380...420
396...484
418...462
432...528
456...504
477...583
503...556
495...605
522...577
175
185
202
214
243
256
284
300
324
342
356
376
388
408
429
477
445
495
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
344
328
360
344
430
414
504
482
574
548
631
602
686
658
764
729
793
760
1.7
1.8
1.7
1.7
1.4
1.4
1.2
1.2
1.0
1.1
1.0
1.0
0.87
0.91
0.79
0.82
0.76
0.79
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V:
please refer to datasheet P6SMBJ5.0 ... 170CA
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V:
siehe Datenblatt P6SMBJ5.0 ... 170CA
2
http://www.diotec.com/
© Diotec Semiconductor AG
P6SMB220 ... P6SMB550CA
120
[%]
tr = 10 µs
100
100
[%]
80
80
60
60
IPPM/2
PPPM/2
40
IPP
20
PPP
0
40
IPP
20
PPP
tP
0
0
1
2
3
[ms] 4
0
TA 50
100
150
[°C]
Peak pulse power/current vs. ambient temperature1)
10/1000µs - pulse waveform
10/1000µs - Impulsform
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1)
102
[kW]
1
10
1
PPP
0.1
0.1µs
tP
1µs
10µs
100µs
1ms
10ms
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
unidir.
bidir.
VR = 4 V
[pF]
Cj
[V]
VBR
Junction capacitance vs. breakdown voltage (typ.)
Sperrschichtkapazität in Abh. v.d. Abbruchspg. (typ.)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
3
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