DMD4N65-TR [DYELEC]
650V N-Channel Power MOSFET;
| 型号： | DMD4N65-TR |
| 厂家： | 
DIYI Electronic Technology Co., Ltd. |
| 描述： | 650V N-Channel Power MOSFET |
| 文件： | 总10页 (文件大小：2826K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4N65
650V N-Channel Power MOSFET
R
<2.4Ω @ V =10V
●
DS(ON) GS
PRODUCT SUMMARY
●
●
●
Fast switching capability
VDS (V)
RDS(on)(Ω)
ID (A)
Lead free in compliance with EU RoHS directive.
Green molding compound
4
650
2.4 @ VGS =10V
●
Case: TO-251,TO-252,TO-220,ITO-220
Pin Definition:
TO-262,TO-263 Package
1. Gate
2. Drain
3. Source
Ordering Information
Package
Part No.
DMP4N65-TU
DMD4N65-TR
DMD4N65-TU
DMT4N65-TU
DMF4N65-TU
DMK4N65-TU
DMG4N65-TU
DMG4N65-TR
Packing
75pcs / Tube
TO-251
TO-252
TO-252
TO-220
ITO-220
TO-262
TO-263
TO-263
Block Diagram
2.5Kpcs / 13” Reel
75pcs / Tube
D
50pcs / Tube
50pcs / Tube
G
50pcs / Tube
50pcs / Tube
S
800pcs / 13" Reel
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
VDSS
650
Gate-Source Voltage
VGSS
±30
V
ID
4.0
16
A
A
Continuous Drain Current
Pulsed Drain Current (Note 2)
IDM
Avalanche Energy
Single Pulsed (Note 3)
260
106
35
EAS
mJ
W
TO-220/TO-262/TO-263
ITO-220
W
Power Dissipation
PD
TO-251/TO-252
50
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 3.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
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4N65
650V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
TO-220/ITO-220
Junction to Ambient
TO-262/TO-263
110
TO-251/ TO-252
TO-220/ITO-220
TO-262/TO-263
2.35
ITO-220
°C/W
Junction to Case
5.5
2.9
θJC
TO-251/ TO-252
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
650
V
Drain-Source Leakage Current
Gate-Source Leakage Current
1
μA
Forward
Reverse
V
GS = 30V, VDS = 0V
100 nA
-100 nA
IGSS
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS= 10 V, ID = 2A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
2.0 2.4
Ω
CISS
COSS
CRSS
670
70
pF
pF
pF
VDS = 25V, VGS = 0V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
23
tD(ON)
tR
tD(OFF)
tF
ns
ns
45
100
200
130
100
17
VDD = 325V, ID =4.0A,
RG = 25Ω (Note 1, 2)
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS= 520V,ID= 4.0A,
Gate-Source Charge
QGS
QGD
V
GS= 10V (Note 1, 2)
Gate-Drain Charge
20
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
1.4
4
V
A
VGS= 0V, IS = 4A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
16
A
Reverse Recovery Time
trr
VGS = 0 V, IS = 4A,
dIF/dt = 100 A/ μs (Note 1)
ns
260
2.5
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essenti ly independent of operating temperature
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4N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
SD controlled by pulse period
* D.U.T.-Device Under Test
*
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65
650V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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4N65
650V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
1.2
1.1
2.5
2.0
1.5
1.0
1.0
Note:
1. GS=10V
2. D=4A
0.9
0.8
Note:
1. GS=0V
2. D=250µA
0.5
0.0
200
0
-50
200
-100
-50
50
100
150
-100
0
50
100
150
Junction Temperature, TJ (°С)
Junction Temperature, TJ (°С)
On-State Characteristics
Transfer Characteristics
VGS
10
10
Top:
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
25°С
1
5.0V
150°С
1
0.1
Notes:
Notes:
1. VDS=50V
2. 250µs Pulse Test
1. 50µs Pulse Test
2. TC=25°С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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4N65
650V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
1200
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
10
VDS=300V
1000
Ciss
VDS=480V
8
800
Notes:
1. VGS=0V
2. f 1MHz
VDS=120V
6
Coss
600
4
2
400
200
Crss
Note: ID=4A
0
0
20
25
0
5
10
15
0.1
1
10
Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
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4N65
650V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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4N65
650V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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4N65
650V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-252 Mechanical Drawing
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4N65
650V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify DIYI for any damages resulting from such improper use or sale.
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