DSF21545SV_04 [DYNEX]
Fast Recovery Diode; 快恢复二极管
| 型号： | DSF21545SV_04 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Fast Recovery Diode |
| 文件： | 总7页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSF21545SV
Fast Recovery Diode
Replaces January 2000 version, DS4153-4.0
DS4153-5.0 June 2004
APPLICATIONS
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
4500V
3230A
20000A
1800µC
7.0µs
I The DSF21545SV is a purpose designed freewheel
diode to complement the DG858BW GTO in inverter
circuits, using energy recovery snubbers.
trr
FEATURES
I The DSF21545SV is designed for fast turn-on thus
minimising reverse current through the GTO.
I Low recovered charge for low losses.
I DSF21545SV is housed in a similar outline to that of the
DG858BW therefore offering complete mechanical
compatibility for parallel and series clamping.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Conditions
Reverse Voltage
VRRM
V
DSF21545SV45
VRSM = VRRM + 100V
4500
Outline type code: V.
See Package Details for further information.
Lower voltage grades available.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF21545SV45
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DSF21545SV
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
3230
5080
4680
A
A
A
Mean forward current
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
IF(RMS)
IF
T
case = 65oC
IF(AV)
IF(RMS)
IF
Mean forward current
RMS value
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
2070
3255
2875
A
A
A
Continuous (direct) forward current
T
case = 65oC
SURGE RATINGS
Conditions
Symbol
Parameter
Max.
20
Units
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
10ms half sine; with 100% VRRM, Tj = 150oC
2.0 x 106
16
A2s
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
1.28 x 106 A2s
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
-
kA
-
A2s
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
k = t1/t2
dIR/dt
t1
t2
τ
0.5x IRR
IRR
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DSF21545SV
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
0.0075 oC/W
0.015 oC/W
Parameter
Symbol
dc
Double side cooled
-
-
Rth(j-c)
Anode dc
Thermal resistance - junction to case
Single side cooled
Cathode dc
Double side
-
-
-
0.015 oC/W
0.002 oC/W
0.004 oC/W
Clamping force 35.0kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
Single side
oC
oC
kN
Tvj
Tstg
-
On-state (conducting)
-
150
150
48
Virtual junction temperature
Storage temperature range
-55
34
Clamping force
CHARACTERISTICS
Symbol
Typ.
Units
Parameter
Conditions
Max.
2.0
150
-
VFM
IRRM
trr
Forward voltage
At 3000A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
-
-
V
mA
Peak reverse current
Reverse recovery time
7.0
µs
QRA1
IRM
Recovered charge (50% chord)
Reverse recovery current
Soft factor
IF = 1000A, diRR/dt = 100A/µs
-
-
1800
500
-
µC
A
Tcase = 150oC, VR = 100V
K
2
-
VTO
rT
Threshold voltage
At Tvj = 150oC
-
-
-
1.25
0.25
75
V
mΩ
V
Slope resistance
At Tvj = 150oC
VFRM
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
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DSF21545SV
CURVES
500
400
300
200
100
0
5000
Measured under
pulse conditions
Measured under
pulse conditions
4000
3000
2000
1000
0
Tj = 25˚C
Tj = 150˚C
Tj = 25˚C
Tj = 150˚C
0
0.5
1.0
1.5
2.0
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage VF - (V)
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
Fig.3 Maximum (limit) forward characteristics
200
150
100
50
10000
Conditions:
Tj = 150˚C,
VR = 100V
Current
waveform
VFR
Voltage
waveform
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
di = δy
dt δx
Tj = 125˚C limit
δy
δx
IF = 200A
IF = 100A
1000
50µs
0
IF
QS
=
Tj = 25˚C limit
Q
S
tp = 1ms
dIR/dt
IRR
100
0
500
1000
1500
2000
2500
3000
1
10
100
1000
Rate of rise of forward current dIF/dt - (A/µs)
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.4 Transient forward voltage vs rate of rise of
forward current
Fig.5 Recovered charge
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DSF21545SV
10000
1000
100
0.01
Conditions:
Tj = 150 ˚C,
d.c.Double side cooled
V
R = 100V
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
0.001
IF = 100A
10
1
0.0001
10
100
1000
0.001
0.01
0.1
Time - (s)
1.0
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.6 Typical reverse recovery current vs rate of rise of
forward current
Fig.7 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
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DSF21545SV
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g
Clamping force: 43kN 10%
Package outline type code: V
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail:power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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