DSF21545SV [DYNEX]

Fast Recovery Diode; 快恢复二极管


型号：	DSF21545SV
厂家：	Dynex Semiconductor
描述：	Fast Recovery Diode 快恢复二极管二极管快恢复二极管
文件：	总8页 (文件大小：74K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DSF21545SV

Fast Recovery Diode

Replaces March 1998 version, DS4153-3.1

DS4153-4.0 January 2000

APPLICATIONS

KEY PARAMETERS

V_RRM

I_F(AV)

I_FSM

Q_r

4500V

3230A

20000A

1800µC

7.0µs

■ The DSF21545SV is a purpose designed freewheel

diode to complement the DG858BW GTO in inverter

circuits, using energy recovery snubbers.

t_rr

FEATURES

■ The DSF21545SV is designed for fast turn-on thus

minimising reverse current through the GTO.

■ Low recovered charge for low losses.

■ DSF21545SV is housed in a similar outline to that of the

DG858BW therefore offering complete mechanical

compatibility for parallel and series clamping.

VOLTAGE RATINGS

Type Number

Repetitive Peak

Conditions

Reverse Voltage

V_RRM

DSF21545SV45

V_RSM= V_RRM+ 100V

4500

Lower voltage grades available.

Outline type code: V.

See Package Details for further information.

CURRENT RATINGS

Max.

Units

Symbol

Parameter

Conditions

Double Side Cooled

I_F(AV)

Half wave resistive load, T_case= 65^oC

T_case= 65^oC

3230

5080

4680

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I_F(RMS)

I_F

_case= 65^oC

I_F(AV)

I_F(RMS)

I_F

Mean forward current

RMS value

Half wave resistive load, T_case= 65^oC

_case= 65^oC

T_case= 65^oC

2070

3255

2875

Continuous (direct) forward current

1/8

DSF21545SV

SURGE RATINGS

Conditions

Symbol

Parameter

Max.

Units

I_FSM

I²t

Surge (non-repetitive) forward current

I²t for fusing

10ms half sine; with 0% V_RRM,T_j= 150^oC

2.0 x 10⁶

A²s

I_FSM

I²t

Surge (non-repetitive) forward current

I²t for fusing

10ms half sine; with 50% V_RRM,T_j= 150^oC

10ms half sine; with 100% V_RRM,T_j= 150^oC

1.28 x 10⁶A²s

I_FSM

I²t

Surge (non-repetitive) forward current

I²t for fusing

A²s

THERMAL AND MECHANICAL DATA

Conditions

Min.

Max. Units

0.0075 ^oC/W

0.015 ^oC/W

Symbol

Parameter

Double side cooled

R_th(j-c)

Anode dc

Thermal resistance - junction to case

Single side cooled

0.015 ^oC/W

0.002 ^oC/W

0.004 ^oC/W

Cathode dc

Double side

Clamping force 35.0kN

with mounting compound

R_th(c-h)

Thermal resistance - case to heatsink

Single side

^oC

T_vj

T_stg

On-state (conducting)

150

Virtual junction temperature

Storage temperature range

-55

Clamping force

CHARACTERISTICS

Symbol

Typ.

Units

Parameter

Conditions

At 3000A peak, T_case= 25^oC

At V_RRM, T_case= 150^oC

Max.

2.0

150

V_FM

I_RRM

t_rr

Forward voltage

µs

Peak reverse current

Reverse recovery time

7.0

Q_RA1

I_RM

Recovered charge (50% chord)

Reverse recovery current

Soft factor

I_F= 1000A, di_RR/dt = 100A/µs

1800

500

µC

T_case= 150^oC, V_R= 100V

V_TO

r_T

Threshold voltage

At T_vj= 150^oC

1.25

0.25

mΩ

Slope resistance

At T_vj= 150^oC

V_FRM

Forward recovery voltage

di/dt = 1000A/µs, T_j= 125^oC

2/8

DSF21545SV

DEFINITION OF K FACTOR AND Q_RA1

Q_RA1= 0.5x I_RR(t₁+ t₂)

k = t₁/t₂

dI_R/dt

t₁

t₂

0.5x I_RR

I_RR

CURVES

5000

4000

3000

2000

1000

Measured under

pulse conditions

T_j= 25˚C

T_j= 150˚C

1.0

2.0

3.0

4.0

Instantaneous forward voltage V_F- (V)

Fig.1 Maximum (limit) forward characteristics

3/8

DSF21545SV

500

400

300

200

100

Measured under

pulse conditions

T_j= 25˚C

T_j= 150˚C

0.5

1.0

1.5

2.0

Instantaneous forward voltage V_F- (V)

Fig.2 Maximum (limit) forward characteristics

250

200

150

100

Current

waveform

V_FR

Voltage

waveform

di = δy

dt δx

δy

T_j= 125˚C limit

T_j= 25˚C limit

δx

500

1000

1500

2000

2500

3000

Rate of rise of forward current dI_F/dt - (A/µs)

Fig.3 Transient forward voltage vs rate of rise of forward current

4/8

DSF21545SV

100000

10000

1000

50µs

Conditions:

T_j= 150˚C,

V_R= 100V

I_F

Q =

∫

t_p= 1ms

dI_R/dt

I_RR

I_F= 4000A

I_F= 2000A

I_F= 1000A

I_F= 500A

I_F= 200A

I_F= 100A

100

1000

Rate of rise of reverse current dI_R/dt - (A/µs)

Fig.4 Recovered charge

10000

Conditions:

T_j= 150 ˚C,

V_R= 100V

I_F= 4000A

I_F= 2000A

I_F= 1000A

I_F= 500A

1000

100

I_F= 200A

I_F= 100A

100

1000

Rate of rise of reverse current dI_R/dt - (A/µs)

Fig.5 Typical reverse recovery current vs rate of rise of reverse current

5/8

DSF21545SV

0.1

d.c.Double side cooled

0.01

0.001

0.0001

0.001

0.01

0.1

1.0

100

Time - (s)

Fig.5 Maximum (limit) transient thermal impedance - junction to case

6/8

DSF21545SV

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

2 holes Ø3.6 x 2.0 deep (In both electrodes)

Cathode

Ø112.5 max

Ø73 nom

Anode

Nominal weight: 1100g

Clamping force: 43kN ±10%

Package outine type code: V

ASSOCIATED PUBLICATIONS

Title

Application Note

Number

Calculating the junction temperature or power semiconductors

Recommendations for clamping power semiconductors

Thyristor and diode measurement with a multi-meter

Use of V_TO, r_Ton-state characteristic

AN4506

AN4839

AN4853

AN5001

7/8

DSF21545SV

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-

tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and

current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The

Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of

our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete

solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-

loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.

Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the

performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on

request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the

factory.

http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: 00-44-(0)1522-500500

CUSTOMER SERVICE CENTRES

France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50

North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444

UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

SALES OFFICES

Fax: 00-44-(0)1522-500550

France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50

Germany Tel: 07351 827723

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,

Nepean, Ontario, Canada K2E 7W6.

Tel: 613.723.7035

Fax: 613.723.1518

Toll Free: 1.888.33.DYNEX (39639)

North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.

UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.

TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as

a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves

the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such

methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication

or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

8/8

DSF21545SV [DYNEX]

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