GP800DDS12 [DYNEX]
Powerline N-Channel Dual Switch IGBT Module; 电力线的N沟道双管IGBT模块
| 型号： | GP800DDS12 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Powerline N-Channel Dual Switch IGBT Module |
| 文件： | 总11页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GP800DDS12
Powerline N-Channel Dual Switch IGBT Module
Replaces October 1999 version, DS5172-3.0
DS5172-4.0 January 2000
The GP800DDS12 is a dual switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
KEY PARAMETERS
1200V
VCES
VCE(sat)
IC
(typ)
(max)
(max)
2.7V
800A
IC(PK)
1600A
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
5
6
3
4
1
2
7
8
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
9
12
11
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
10
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
Outline type code: D
FEATURES
(See package details for further information)
■ n - Channel
Fig. 1 Electrical connections - (not to scale)
■ Enhancement Mode
■ High Input Impedance
■ Optimised For High Power High Frequency Operation
■ Isolated Base
11(G2)
12(C2)
2(C2)
10(E2)
3(C1)
4(E2)
1(E1)
5(E1)
6(G1)
7(C1)
■ Full 1200V Capability
■ 800A Per Arm
Fig.2 Dual switch circuit diagram
APPLICATIONS
■ High Power Switching
■ Motor Control
ORDERING INFORMATION
Order As: GP800DDS12
Note: When ordering, please use the whole part number.
■ Inverters
■ Traction Systems
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
GP800DDS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Tcase = 25˚C unless stated otherwise.
Symbol
VCES
VGES
IC
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Test Conditions
Max.
1200
±20
Units
VGE = 0V
V
V
A
A
A
-
DC, Tcase = 25˚C
DC, Tcase = 75˚C
1050
800
1ms, Tcase = 75˚C
1600
IC(PK)
Pmax
Visol
Maximum power dissipation
Isolation voltage
6000
2500
W
V
Tcase = 25˚C (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Parameter
Conditions
Min. Max. Units
Thermal resistance - transistor (per arm) DC junction to case
-
-
-
21 oC/kW
40 oC/kW
-
Thermal resistance - diode (per arm)
DC junction to case
Rth(j-c)
Mounting torque 5Nm
(with mounting grease)
Thermal resistance - Case to heatsink
(per module)
oC/kW
8
Rth(c-h)
Tj
Transistor
-
150
125
125
5
oC
oC
Junction temperature
Diode
-
Tstg
-
Storage temperature range
Screw torque
-
–40
oC
Mounting - M6
-
-
-
Nm
Nm
Nm
Electrical connections - M4
Electrical connections - M8
2
10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11
GP800DDS12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Collector cut-off current
Conditions
VGE = 0V, VCE = VCES
Min. Typ. Max.
Units
mA
ICES
-
-
-
-
1
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 120mA, VGE = VCE
50
mA
IGES
Gate leakage current
Gate threshold voltage
-
4
-
-
±4
7.5
3.5
4.0
µA
V
VGE(TH)
-
V
GE = 15V, IC =800A
2.7
3.2
V
VCE(SAT)
Collector-emitter saturation voltage
VGE = 15V, IC = 800A, Tcase = 125˚C
-
V
A
A
IF
Diode forward current
DC
-
-
-
-
800
tp = 1ms
IFM
Diode maximum forward current
1600
VF
Diode forward voltage
IF = 800A
-
-
2.2
2.3
2.4
2.5
V
V
IF = 800A, Tcase = 125˚C
Cies
LM
Input capacitance
Module inductance
VCE = 25V, VGE = 0V, f = 1MHz
-
-
-
90
20
-
-
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
GP800DDS12
INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
Parameter
Turn-off delay time
Conditions
Min. Typ. Max. Units
ns
ns
-
-
-
1100 1300
tf
Fall time
150
130
200
170
IC = 800A
VGE = ±15V
EOFF
Turn-off energy loss
mJ
VCE = 600V
td(on)
tr
Turn-on delay time
Rise time
ns
ns
-
-
-
800
320
90
900
400
130
RG(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
EON
Turn-on energy loss
mJ
IF = 800A
VR = 50%VCES
dIF/dt = 2000A/µs
Qrr
Qrr
200
-
-
-
150
170
µC
µC
Diode reverse recovery charge
Diode reverse recovery charge
,
Tcase = 125˚C unless stated otherwise.
td(off)
tf
EOFF
td(on)
Turn-off delay time
Fall time
ns
ns
-
-
-
1300 1500
200
170
250
250
IC = 800A
VGE = ±15V
Turn-off energy loss
Turn-on delay time
mJ
ns
VCE = 600V
-
-
-
-
-
950 1200
RG(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
tr
Rise time
350
150
200
225
450
200
260
ns
EON
Turn-on energy loss
mJ
IF = 800A
VR = 50%VCES
dIF/dt = 2000A/µs
µC
µC
Qrr
Qrr
Diode reverse recovery charge
Diode reverse recovery charge
,
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
GP800DDS12
SWITCHING DEFINITIONS
+15V
Vge
10%
0V
-15V
t4 + 5µs
IC
Eon
=
∫
Vce.Icdt
90%
10%
t1
td(on) = t2 - t1
tr = t3 - t2
Vce
t1
t4
t3
t2
Fig.3 Definition of turn-on switching times
+15V
90%
0V
Vge
-15V
t7 + 5µs
Eoff
=
∫
Vce.Icdt
90%
10%
t5
td(off) = t6 - t5
tf = t7 - t6
IC
Vce
t5
t6
t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
GP800DDS12
CURVES
Vge = 20/15/12/10V
Vge = 20/15/12/10V
1600
1600
1400
1200
1000
800
Common emitter
case = 25˚C
Common emitter
Tcase = 125˚C
T
1400
1200
1000
800
600
600
400
200
0
400
200
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Collector-emitter voltage, Vce - (V)
Fig.5 Typical output characteristics
Fig.6 Typical output characteristics
220
200
180
160
140
120
100
80
160
140
120
100
80
Conditions:
Tcase = 125˚C,
Conditions:
Tcase = 25˚C,
A
VCE = 600V,
A
V
V
CE = 600V,
GE = ±15V
V
GE = ±15V
B
C
B
C
60
60
40
40
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
20
0
0
0
100
200
300
400
500 600
700 800
0
100
200
300
400
500
600
700
800
Collector current, IC - (A)
Collector current, IC - (A)
Fig.7 Typical turn-on energy vs collector current
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/11
GP800DDS12
180
160
140
120
100
80
250
200
150
100
50
Conditions:
Tcase = 25˚C,
VCE = 600V,
Conditions:
Tcase = 125˚C,
VCE = 600V,
V
GE = ±15V
A
B
V
GE = ±15V
A
B
C
C
60
40
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
0
0
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
600
700
800
Collector current, IC - (A)
Collector current, IC - (A)
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
2000
70
Conditions:
Conditions:
case = 125˚C,
CE = 600V
VGE = 15V
Rg = 3.3Ω
V
V
CE = 600V,
GE = 15V,
T
V
1800
1600
1400
1200
1000
800
600
400
200
0
Tcase = 125˚C
60
50
40
30
20
10
0
Rg = 3.3Ω
td(off)
tf
td(on)
Tcase = 25˚C
tr
0
200
400
Collector current, IC (A)
600
800
0
100
200
300
400
500
600
700
800
Collector currrent, IC - (A)
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
GP800DDS12
1600
1400
1200
1000
800
600
400
200
0
2000
1800
1600
1400
Tj = 25˚C
Tj = 125˚C
1200
1000
800
600
400
200
0
Tcase = 125˚C
ge = ±15V
Rg = 3.3Ω*
V
*Recommended minimum value
0
0.5
1
1.5
2
2.5
3
3.5
1000
1200
600
Collector-emitter voltage, Vce - (V)
0
200
400
800
Forward voltage, VF - (V)
Fig.13 Diode typical forward characteristics
Fig.14 Reverse bias safe operating area
10000
1000
100
10
100
Diode
IC max. (single pulse)
Transistor
10
1
0.1
1
10000
1
10
100
1000
1
10
100
1000
10000
Pulse width, tp - (ms)
Collector-emitter voltage, Vce - (V)
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
8/11
GP800DDS12
2000
1800
1600
1400
1200
1000
800
1200
1000
800
600
400
200
0
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
600
400
Conditions:
Tj = 125°C, Tc = 75°C,
Rg = 3.3Ω, VCC = 600V
200
0
1
10
50
0
20
40
60
80
100
120
140
160
fmax - (kHz)
Case temperature, Tcase - (˚C)
Fig.17 3-Phase inverter operating frequency
Fig.18 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/11
GP800DDS12
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
62
62
15
15
5
6
3
1
7
8
9
12
4
2
11
10
11.5
35
20
6x Ø7
14
4x M8
6x M4
5
140
Nominal weight: 1600g
Module outline type code: D
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
An introduction to IGBTs
AN4502
AN4503
AN4504
AN4505
AN4506
AN4507
AN4508
AN4869
AN5000
AN5167
AN5190
IGBT ratings and characteristics
Heatsink requirements for IGBT modules
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
Parallel operation of IGBTs – punch through vs non-punch through characteristics
Guidance notes for formulating technical enquiries
Principle of rating parallel connected IGBT modules
Short circuit withstand capability in IGBTs
Driving high power IGBTs with concept gate drivers
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
10/11
GP800DDS12
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
SALES OFFICES
Fax: 00-44-(0)1522-500550
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5172-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/11
相关型号：
©2020 ICPDF网 联系我们和版权申明