MP03HBN360-16 [DYNEX]
Dual Thyristor, Thyristor/Diode Module; 双可控硅，晶闸管/二极管模块
| 型号： | MP03HBN360-16 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Dual Thyristor, Thyristor/Diode Module |
| 文件： | 总9页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP03XXX360
Dual Thyristor, Thyristor/Diode Module
Replaces January 2000 version, DS4484-5.0
DS4484-6.1 June 2001
FEATURES
KEY PARAMETERS
VDRM
IT(AV)
1800V
355A
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (Non Toxic) Isolation Medium
ITSM(per arm)
Visol
8100A
3000V
G1 K1 K2 G2
1
1
1
2
3
3
3
APPLICATIONS
■ Motor Control
Circuit type code: HBT
G1 K1
■ Controlled Rectifier Bridges
■ Heater Control
2
■ AC Phase Control
Circuit type code: HBP
K2 G2
VOLTAGE RATINGS
2
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
Circuit type code: HBN
Fig. 1 Circuit diagrams
MP03XXX360-18
MP03XXX360-16
MP03XXX360-14
MP03XXX360-12
MP03XXX360-10
MP03XXX360-08
1800
1600
1400
1200
1000
800
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 30mA
VDSM = VRSM
=
VDRM = VRRM + 100V
respectively
K2
G2
G1
K1
1
2
3
Lower voltage grades available.
XXX shown in the part number above represents the circuit
configuration required.
ORDERING INFORMATION
Order As:
MP03HBT360-XX
MP03HBN360-XX
MP03HBP360-XX
XX shown in the part number above represents the VRRM/100
slection required, e.g. MP03HBT360-17
Outline type code: MP03
Note: When ordering, please use the complete part number.
Fig. 2 Electrical connections - (not to scale)
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MP03XXX360
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Half wave resistive load
Max. Units
IT(AV)
Mean on-state current
Tcase = 75˚C
case = 85˚C
355
312
276
242
560
8.1
A
A
T
Theatsink = 75˚C
Theatsink = 85˚C
A
A
IT(RMS
ITSM
I2t
RMS value
Tcase = 75˚C
A
Surge (non-repetitive) on-current
I2t for fusing
10ms half sine, Tj = 130˚C
VR = 0
kA
0.33x106 A2s
6.5 kA
0.21x106 A2s
ITSM
I2t
Surge (non-repetitive) on-current
I2t for fusing
10ms half sine, Tj = 130˚C
VR = 50% VDRM
Visol
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000
V
THERMAL AND MECHANICAL RATINGS
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Test Conditions
Min.
Max.
Units
Symbol
Rth(j-c)
dc
-
-
-
-
0.105 ˚C/kW
0.115 ˚C/kW
Half wave
3 Phase
0.12
0.05
˚C/kW
˚C/kW
Rth(c-hs)
Thermal resistance - case to heatsink
(per thyristor or diode)
Mounting torque = 5Nm
with mounting compound
-
Tvj
Tstg
-
Virtual junction temperature
Storage temperature range
Screw torque
Reverse (blocking)
135
135
˚C
˚C
–40
-
Mounting - M5
Electrical connections - M8
-
-
-
-
5(44) Nm (lb.ins)
9(80) Nm (lb.ins)
-
Weight (nominal)
950
g
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MP03XXX360
DYNAMIC CHARACTERISTICS - THYRISTOR
Parameter
Test Conditions
At VRRM/VDRM, Tj = 130˚C
Min.
Max. Units
Symbol
IRRM/IDRM
dV/dt
-
-
-
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
50
mA
To 67% VDRM, Tj = 130˚C
1000
500
V/µs
A/µs
dI/dt
From 67% VDRM to 600A, gate source 10V, 5Ω
tr = 0.5µs, Tj = 130˚C
-
-
0.78
0.79
V
VT(TO)
rT
Threshold voltage
At Tvj = 135˚C. See note 1
On-state slope resistance
At Tvj = 135˚C. See note 1
mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Test Conditions
VDRM = 5V, Tcase = 25oC
Max.
3
Units
V
Gate trigger current
VDRM = 5V, Tcase = 25oC
150
0.25
30
mA
V
IGT
VGD
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
At VDRM Tcase = 125oC
Anode positive with respect to cathode
V
VFGM
VFGN
VRGM
IFGM
Anode negative with respect to cathode
0.25
5
V
-
V
Anode positive with respect to cathode
10
A
PGM
See table fig. 5
100
5
W
W
PG(AV)
Mean gate power
-
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MP03XXX360
1600
20
15
10
5
Measured under pulse conditions
Tj = 135˚C
I2t = Î2 x t
2
1400
1200
1000
200
175
150
800
600
I2t
400
200
0
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
1
10
1
2
3 45
10
20 30
Instantaneous on-state voltage, VT - (V)
ms
Cycles at 50Hz
Duration
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% VRSM at Tcase = 130˚C)
100
10
1
0.15
Pulse width Frequency Hz Table gives pulse power PGM in Watts
µs
20
25
100
500
1ms
10ms
50 100 400
100 100 100
100 100 100
100 100 100
100 100 25
VFGM
d.c.
100 50
-
-
0.10
0.05
0
10
-
Tj = 25˚C
Region of
certain
triggering
0.1
0.001
0.01
IGD
0.1
0.1
10
IFGM
0.001
0.01
0.1
1.0
Time - (s)
10
100
Gate trigger current, IGT - (A)
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
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MP03XXX360
1100
1000
1100
1000
900
800
700
600
500
400
300
200
100
0
Conduction angle
Conduction angle
30°
30°
60°
60°
90°
90°
120°
180°
DC
120°
180°
900
800
700
600
500
400
300
200
100
0
0
50
150
250
350
450
550
650
750
0
50 100 150 200 250 300 350 400 450 500 550
Sine wave current (Average, per arm)
Square wave current (Average, per arm)
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
100
100
Conduction angle
Conduction angle
30°
30°
90
80
70
60
50
40
30
20
10
0
60°
90
60°
90°
90°
120°
180°
DC
120°
80
180°
70
60
50
40
30
20
10
0
100
200
300
400
500
600
700
800
100 150 200 250 300 350 400 450 500 550
Square wave current (Average, per arm) - (A)
Sine wave current (Average, per arm) - (A)
Fig. 9 Maximum permissible case temperature vs
on-state current at specified conduction angles,
sine wave 50/60Hz
Fig. 10 Maximum permissible case temperature vs
on-state current at specified conduction angles,
square wave 50/60Hz
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MP03XXX360
1600
1400
1200
1000
800
600
400
200
0
1600
1400
Rth(hs-a)
R - Load
L - Load
0.02
0.04
0.08
0.1
0.12
0.15
0.2
1200
1000
800
600
400
200
0
0.3
0.4
0
100
200
300
400
500
600
20 30 40 50 60 70 80 90 100 110 120
Single phase bridge DC output current (A)
Maximum ambient temperature - (˚C)
Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible case temperature for
specified values of heatsink thermal resistance
1600
1400
1200
1000
800
600
400
200
0
1600
1400
1200
1000
800
600
400
200
0
Rth(hs-a)
R & L Load
0.02
0.04
0.08
0.1
0.12
0.15
0.2
0.3
0.4
20 30 40 50 60 70 80 90 100 110 120
0
100
200
300
400
500
600
Maximum ambient temperature - (˚C)
3 Phase bridge output DC current - (A)
Fig. 12 Fig. 11 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible case temperature
for specified values of heatsink thermal resistance
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MP03XXX360
PACKAGE DETAILS
Forfurtherpackageinformation, please visitourwebsiteorcontactyournearestCustomerServiceCentre. Alldimensionsinmm, unless
stated otherwise. DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
K2
G2
2
3
1
G1
K1
80
2.8x0.8
115
3x M8
92
Recommended fixings for mounting: M5 socket head cap screws.
Nominal weight: 950g
Auxiliary gate/cathode leads are not supplied but may be purchsed separately.
Module outline type code: MP03
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MP03XXX360
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
temperature at 75˚C if full rated current is to be achieved. Power
dissipation may be calculated by use of VT(TO) and rT information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.
After application of thermal compound, place the module
squarely over the mounting holes, (or ‘T’ slots) in the heatsink.
Using a torque wrench, slowly a torque wrench, slowly tighten
the recommended fixing bolts at each end, rotating each in turn
no more than 1/4 of a revolution at a time. Continue until the
required torque of 6Nm (55lb.ins) is reached at both ends.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
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MP03XXX360
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Fax: 00-44-(0)1522-500550
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4484-6 Issue No. 6.1 June 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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