MP03XXX300 [DYNEX]
Phase Control Dual SCR, SCR/Diode Modules; 相位控制双可控硅SCR /二极管模块型号: | MP03XXX300 |
厂家: | Dynex Semiconductor |
描述: | Phase Control Dual SCR, SCR/Diode Modules |
文件: | 总10页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MP03 XXX 300 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4482-5.0
DS4482-6.0 January 2000
FEATURES
KEY PARAMETERS
VDRM
ITSM
IT(AV) (per arm)
Visol
1600V
10600A
312A
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (non-toxic) Isolation Medium
2500V
CIRCUIT OPTIONS
Code
Circuit
HBT
APPLICATIONS
■ Motor Control
■ Controlled Rectifier Bridges
■ Heater Control
HBP
HBN
■ AC Phase Control
VOLTAGE RATINGS
PACKAGE OUTLINE
Conditions
Type
Number
Repetitive
Peak
Voltages
VDRM VRRM
1600
1400
1200
1000
MP03/300 - 16
MP03/300 - 14
MP03/300 - 12
MP03/300 - 10
T(vj) = 125oC
IDRM = IRRM = 30mA
VDSM & VRSM
=
VDRM & VRRM+ 100V
respectively
Lower voltage grades available.
For full description of part number see "Ordering instructions"
on page 3.
Module type code: MP03.
See Package Details for further information
CURRENT RATINGS - PER ARM
Symbol
Parameter
Conditions
Max.
312
265
216
Units
A
Tcase = 75oC
Tcase = 85oC
Theatsink = 75oC
A
Mean on-state current
RMS value
Halfwave, resistive load
Tcase = 75oC
IT(AV)
A
Theatsink = 85oC
A
A
181
490
IT(RMS)
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MP03 XXX 300 Series
SURGE RATINGS - PER ARM
Symbol
Parameter
Conditions
VR = 0
Units
kA
Max.
10.6
8.5
10ms half sine;
Tj = 125˚C
IFSM
Surge (non-repetitive) on-state current
I2t for fusing
VR = 50% VRRM
VR = 0
kA
0.56 x 106 A2s
10ms half sine;
Tj = 125˚C
I2t
0.36 x 106
A2s
VR = 50% VRRM
THERMAL & MECHANICAL RATINGS
Symbol
Parameter
Conditions
Units
oC/W
oC/W
oC/W
Max.
0.11
0.12
0.13
dc
Thermal resistance - junction to case
per Thyristor or Diode
halfwave
3 phase
Rth(j-c)
Mounting torque = 5Nm
with mounting compound
Thermal resistance - case to heatsink
per thyristor or diode
Rth(c-hs)
0.05
125
oC/W
oC
Tvj
Virtual junction temperature
Storage temperature range
Off-state (Blocking)
-40 to 125 oC
Tstg
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Visol
Isolation voltage
2.5
kV
DYNAMIC CHARACTERISTICS- THYRISTOR
Symbol
VTM
Parameter
Max.
1.50
30
Units
V
Conditions
At 1000A, Tcase = 25oC - See Note 1
At VRRM/VDRM, Tj = 125oC
On-state voltage
mA
V/µs
IRRM/IDRM
dV/dt
Peak reverse and off-state current
Linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC
200*
From 67% VDRM to 600A
Gate source 10V, 5Ω
dI/dt
Rate of rise of on-state current
100
A/µs
Rise time 0.5µs, Tj =125oC
VT(TO)
rT
Threshold voltage
At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1
0.8
0.7
V
mΩ
On-state slope resistance
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
2/10
MP03 XXX 300 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Conditions
Typ.
Max.
3.0
150
0.25
30
Units
V
VDRM = 5V, Tcase = 25oC
-
-
-
-
-
-
-
-
-
Gate trigger voltage
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
mA
V
VGD
At VDRM Tcase = 25oC
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
V
VFGM
VFGN
VRGM
IFGM
Anode positive with respect to cathode
Anode negative with respect to cathode
0.25
5.0
10
V
V
Anode positive with respect to cathode
A
PGM
tp = 25µs
100
5
W
W
PG(AV)
Mean gate power
ORDERING INSTRUCTIONS
Examples:
Part number is made up of as follows:
MP03 HBP300 - 16
MP03 HBN300 - 10
MP03 HBT300 - 14
MP03 HBT 300 -12
MP = Pressure contact module
03
= Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
300 = Nominal average current rating at Tcase = 75oC
12
= VRRM/100
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
■Adequateheatsinkingisrequiredtomaintainthebasetemperature
at75oCiffullratedcurrentistobeachieved. Powerdissipationmay
be calculated by use of VT(TO) and rT information in accordance with
standard formulae. We can provide assistance with calculations or
choice of heatsink if required.
■ An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
■ After application of thermal compound, place the module
squarely over the mounting holes, (or 'T' slots) in the heatsink.
Using a torque wrench, slowly tighten the recommended fixing
bolts at each end, rotating each in turn no more than 1/4 of a
revolution at a time. Continue until the required torque of 5Nm
(44lb.ins) is reached at both ends.
■ The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
■ Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery of Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
■ It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
3/10
MP03 XXX 300 Series
CURVES
1600
1200
800
400
0
Measured under pulse conditions
Tj = 125˚C
0.6 0.8 1.0
1.2 1.4 1.6 1.8
Instantaneous on-state voltage - (V)
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
100
Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
50 100 400
100 100 100
100 100 100
100 100 100
100 100 25
µs
20
25
100
500
1ms
10ms
VFGM
10
100 50
10
-
-
-
Tj = -40˚C
Tj = 25˚C
Tj = 125˚C
Region of
certain triggering
1
0.1
0.001
0.01
0.1
Gate trigger current - (A)
Fig. 2 Gate trigger characteristics
0.1
10
IFGM
IGD
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MP03 XXX 300 Series
0.15
0.10
0.05
0
d.c.
0.001
0.01
0.1
1.0
10
100
Time - (s)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
20
15
10
5
I2t = Î2 x t
2
500
450
400
350
300
250
200
I2t
150
50
0
1
10
1
2
3 45
ms
Cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
5/10
MP03 XXX 300 Series
450
400
350
300
250
200
150
100
50
180˚
120˚
90˚
60˚
30˚
0
0
50
100
150
200
250
300
350
Mean on-state current - (A)
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
450
180˚
120˚
400
90˚
d.c.
350
300
250
200
150
100
50
60˚
30˚
0
0
50
100
150
200
250
350
300
Mean on-state current - (A)
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
6/10
MP03 XXX 300 Series
140
120
100
80
60
40
20
30˚
100
60˚
150
90˚
200
120˚
250
180˚
0
0
50
350
300
Mean on-state current - (A)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
d.c.
80
60
40
20
30˚
60˚
200
90˚
120˚
180˚
350
0
0
50
100
150
Mean on-state current - (A)
250
300
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
7/10
MP03 XXX 300 Series
1200
1000
0.08
0.04 0.02 Rth(hs-a) ˚C/W
R - Load
L - Load
800
0.10
0.12
0.15
600
400
200
0
0.20
0.30
0.40
20
0
40
60
80 100 120 140
0
200
D.C. output current - (A)
600
400
Maximum ambient temperature - (˚C)
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
1200
1000
R & L- Load
0.10 0.08
0.04 0.02 Rth(hs-a) ˚C/W
800
600
400
200
0
0.12
0.15
0.20
0.30
0.40
20
Maximum ambient temperature - (˚C)
0
40
60
80 100 120 140
0
200
D.C. output current - (A)
600
400
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP03 XXX 300 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
K2
G2
G1
K1
80
2.8x0.8
2
3
3x M8
1
92
Recommended fixings for mounting:
Recommended mounting torque:
M5 socket head cap screws.
5Nm (44lb.ins)
Recommended torque for electrical connections: 8Nm (70lb.ins)
Maximum torque for electrical connections:
Nominal weight: 950g
9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G K
1 1
K
G
2
2
1
1
1
2
3
HBT
G K
1 1
2
3
HBP
2
K
G
2
2
3
HBN
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MP03 XXX 300 Series
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
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SALES OFFICES
Fax: 00-44-(0)1522-500550
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4482-6 Issue No. 6.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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