EC5579-HF [E-CMOS]
181 Channel Voltage Buffers for TFT LCD;
| 型号： | EC5579-HF |
| 厂家： | 
E-CMOS Corporation |
| 描述： | 181 Channel Voltage Buffers for TFT LCD CD |
| 文件： | 总12页 (文件大小：825K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Introduction
Features
ꢀ
Wide supply voltage range 6.5V ~ 18V
General Description
ꢀ
Rail-to-rail output swing (The highest two stage &
lowest two stage)
The EC5579 is a 18+1 channel voltage buffers that
buffers reference voltage for gamma correction in a
thin film transistor liquid crystal display (TFT LCD).
This device incorporating a Vcom amplifier circuits,
four rail to rail buffer amplifier circuits (the highest
two stage and lowest two stage) and 14 buffer
amplifiers circuits.
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
High slew rate 1V/μs
GBWP 1 MHz
2 MHz -3dB Bandwidth
Large Vcom Drive Current: ±100mA(Max)
Ultra-small Package TQFP-48
The EC5579 is available in a space saving 48-pin
TQFP package, and the operating temperature is
from –20°C to +85°C.
Applications
ꢀ
TFT-LCD Reference Driver
Pin Configuration
A,B,Q,R: Rail to Rail OPAMPs
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Ordering/Marking Information
Package
Part Number
Marking
Marking Information
Lead free
EC5579-F
AS19-F
Green Mode
EC5579-G
EC5579-HF
AS19-G
AS19-HF
AS19-HG
AS19-H1F
AS19-H1G
Lead free with exposed pad (3.05x3.05 mm)
Green Mode with exposed pad (3.05x3.05 mm)
Lead free with exposed pad (5.0x5.0 mm)
Green Mode with exposed pad (5.0x5.0 mm)
TQFP 48
EC5579-HG
EC5579E-H1F
EC5579E-H1G
Ordering Information
EC5579 X - X X
F: Lead-Free
G:Green Mode
H: Exposed pad (3.05x3.05 mm)
H1: Exposed pad (5.0x5.0 mm)
E: Package type : TQFP48
Package Marking Indication
AS19-XX
Date Code
Lot. Number
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Absolute Maximum Ratings (TA=25°C)
Values beyond absolute maximum ratings may cause permanent damage to the device. These are stress ratings only;
functional device operation is not implied. Exposure to AMR conditions for extended periods may affect device reliability.
Value
Parameter
Symbol
Unit
Supply Voltage between VS+ and VS-
Input Voltage
Vs
—
+18
V
V
Vs- -0.5
(For rail to rail)
—
V
Vs+ +0.5
Maximum Output Current (A ~ R Buffers)
Maximum Output Current (Com Buffer)
Maximum junction Temperature
Storage Temperature Range
Operating Temperature Range
Lead temperature
±30
Iout
mA
mA
°C
°C
°C
°C
KV
±100
Iout(com)
TJ
+150
TSTG
TOP
Tlead
—
-65 to +150
-20 to +85
260
ESD Voltage
2
Important Note:
All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only.
Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Electrical Characteristics
VS+= +5V, VS - = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified.
Parameter Description
Condition
Min
Typ
Max Units
Input Characteristics
VOS
TCVOS
IB
Input Offset Voltage
VCM= 0V
[1]
—
—
—
—
—
2
5
12
—
50
—
—
mV
µV/°C
nA
Average Offset Voltage Drift
Input Bias Current
VCM= 0V
—
2
RIN
Input Impedance
1
G
CIN
Input Capacitance
—
1.35
pF
Output Characteristics
VOL
VOH
Output Swing Low
Output Swing High
Output Swing Low
Output Swing High
Short Circuit Current
Output Current
IL= -5mA (A, B, Q, R rail-to-rail Buffers)
IL= 5mA (A, B, Q, R rail-to-rail Buffers)
IL= -5mA (C ~ P Buffers)
IL= 5mA (C ~ P Buffers)
(A ~ R Buffers)
-4.92
4.92
—
-4.85
—
V
V
4.85
-3.5
3.5
—
VOL
V
—
VOH
V
—
—
ISC
±120
±30
mA
mA
mA
mA
—
IOUT
(A ~ R Buffers)
—
—
ISC(Com)
IOUT(Com)
Short Circuit Current
Output Current
(Com Buffer)
±300
±100
—
—
(Com Buffer)
—
—
Power Supply Performance
VS is moved from ±3.25V to ±7.75V
No Load (A ~ R Buffers)
PSRR
IS
Power Supply Rejection Ratio
Supply Current (Per Amplifier)
Supply Current
60
—
—
80
500
8
dB
µA
—
750
IS(Com)
(Com Buffer)
mA
—
Dynamic Performance
-4.0V≦VOUT≦4.0V, 20% to 80%
SR
tS
Slew Rate [2]
Settling to +0.1% (AV = +1)
-3dB Bandwidth
—
—
—
—
—
1
5
—
—
—
—
—
V/µs
µs
(AV = +1), VO=2V Step
RL = 10KΩ, CL = 10PF
RL = 10KΩ, CL = 10PF
f = 1 MHz
BW
PM
CS
2
MHz
Degrees
Phase Margin
60
75
Channel Separation
dB
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Typical Performance Characteristics
VCC = 10V, F: 10K
VCC = 10V, F: 10K
VCC = 10V, F: 1K
Figure3. Rail to Rail Capability
Figure4. Large Signal Transient Response
VCC = 10V, F: 1K
VCC = 10V, F: 1K
Figure5. Large Signal Transient Response
Figure6. Small Signal Transient Response
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Typical Performance Characteristics (Continued)
Figure7. Open Loop Gain & Phase vs. Frequency
Figure8. Frequency Response for Various CL
Figure9. Frequency Response for Various RL
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Applications Information
Product Description
The EC5579 rail-to-rail quad channels amplifier is built on an advanced high voltage CMOS process. It’s beyond
rails input capability and full swing of output range made itself an ideal amplifier for use in a wide range of
general-purpose applications. The features of 1µS high slew rate, fast settling time, 2MHz of GBWP as well as high
output driving capability have proven the EC5579 a good voltage reference buffer in TFT-LCD for grayscale
reference applications. High phase margin and extremely low power consumption (500µA per amplifier) make the
EC5579 ideal for Connected in voltage follower mode for low power high drive applications
Supply Voltage, Input Range and Output Swing
The EC5579 can be operated with a single nominal wide supply voltage ranging from 6.5V to 18V with stable
performance over operating temperatures of -20 °C to +85 °C.
With 500mV greater than rail-to-rail input common mode voltage range and 75dB of Common Mode Rejection Ratio,
the EC5579 allows a wide range sensing among many applications without having any concerns over exceeding the
range and no compromise in accuracy. The output swings of the EC5579 typically extend to within 80mV of positive
and negative supply rails with load currents of 5mA. The output voltage swing can be even closer to the supply rails
by merely decreasing the load current. Figure 1 shows the input and output waveforms for the device in the
unity-gain configuration. The amplifier is operated under ±5V supply with a 10k. load connected to GND. The input is
a 10Vp-p sinusoid. An approximately 9.985 Vp-p of output voltage swing can be easily achieved.
Figure10. Operation with Rail-to-Rail Input and Output
Output Short Circuit Current Limit
A +/-120mA short circuit current will be limited by the EC5579 if the output is directly shorted to the positive
or the negative supply. For an indefinitely output short circuit, the power dissipation could easily increase such that
the device may be damaged. The internal metal interconnections are well designed to prevent the output continuous
current from exceeding +/-30 mA such that the maximum reliability can be well maintained.
E-CMOS Corp. (www.ecmos.com.tw)
Page 7 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Output Phase Reversal
The EC5579 is designed to prevent its output from being phase reversal as long as the input voltage is limited from
VS-－0.5V to VS+ ＋0.5V. Figure 2 shows a photo of the device output with its input voltage driven beyond the supply
rails. Although the phase of the device's output will not be reversed, the input's over-voltage should be avoided. An
improper input voltage exceeds supply range by more than 0.6V may result in an over stress damage.
Figure11. Operation with Beyond-the Rails Input
Power Dissipation
The EC5579 is designed for maximum output current capability. Even though momentary output shorted to ground
causes little damage to the device.
For the high drive amplifier EC5579, it is possible to exceed the 'absolute-maximum junction temperature' under
certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the
application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area.
The maximum power dissipation allowed in a package is determined according to:
TJmax -TAmax
PDmax
=
ΘJA
Where:
T
Jmax = Maximum Junction Temperature
Amax= Maximum Ambient Temperature
T
ΘJA = Thermal Resistance of the Package
Dmax = Maximum Power Dissipation in the Package.
P
The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total
power supply voltage, plus the power in the IC due to the loads, or:
P
Dmax =∑i[VS * ISmax + (VS+ – VO) * IL]
When sourcing, and
Dmax = ∑i[VS * ISmax + (VO – VS-) * IL]
P
When sinking.
E-CMOS Corp. (www.ecmos.com.tw)
Page 8 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Where:
i = 1 to 4
VS = Total Supply Voltage
ISmax = Maximum Supply Current Per Amplifier
VO = Maximum Output Voltage of the Application
IL= Load current
RL= Load Resistance = (VS+ – VO)/IL = (VO – VS-)/ IL
A calculation for RL to prevent device from overheat can be easily solved by setting the two PDmax equations equal to
each other.
Θja
Θjc
Pin Count
(℃/W)
(℃/W)
TQFP-48
TQFP-48
TQFP-48
35
42
67
7
Exposed pad (5.0x5.0 mm)
Exposed pad (3.05x3.05 mm)
Normal
19.6
31
Driving Capacitive Loads
The EC5579 is designed to drive a wide range of capacitive loads. In addition, the output current handling capability
of the device allows for good slewing characteristics even with large capacitive loads. The combination of these
features make the EC5579 ideally for applications such as TFT LCD panel grayscale reference voltage buffers, ADC
input amplifiers, etc.
As load capacitance increases, however, the -3dB bandwidth of the device will decrease and the peaking increase.
The amplifiers drive 10pF loads in parallel with10KΩ. with just 1.5dB of peaking, and 100pF with 6.4dB of peaking.
If less peaking is desired in these applications, a small series resistor (usually between 5Ωand 50Ω) can be placed
in
series with the output. However, this will obviously reduce the gain slightly. Another method of reducing peaking is to
add a "snubber" circuit at the output. A snubber is a shunt load consisting of a resistor in series with a capacitor.
Values of 150Ω and 10nF are typical. The advantage of a snubber is that it improves the settling and overshooting
performance while does not draw any DC load current or reduce the gain.
Power Supply Bypassing and Printed Circuit Board Layout
With high phase margin, the EC5579 performs stable gain at high frequency. Like any high-frequency device, good
layout of the printed circuit board usually comes with optimum performance. Ground plane construction is highly
recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to
reduce the risk of oscillation. For normal single supply operation, where the VS- pin is connected to ground, a 0.1 µF
ceramic capacitor should be placed from VS+ pin to VS- pin as a bypassing capacitor. A 4.7µF tantalum capacitor
should then be connected in parallel, placed in the region of the amplifier. One 4.7µF capacitor may be used for
multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are
to be used.
E-CMOS Corp. (www.ecmos.com.tw)
Page 9 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
Application Circuits
E-CMOS Corp. (www.ecmos.com.tw)
Page 10 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
OUTLINE DIMENSIONS (Dimensions shown in millimeters)
H1: Exposed pad (5.0x5.0 mm)
DIMN
Millimeters
INCHES
NOTE
1.PACKAGE BODY SIZES EXCLUDE MOLE
FLASH AND GATE BURRS.
MIN
—
NOM
—
MAX
1.15
0.15
1.05
0.27
0.20
7.10
9.20
7.10
9.20
—
MIN
—
NOM
—
MAX
0.046
0.006
0.041
0.011
0.008
0.279
0.362
0.279
0.362
—
2.DIMENSION L IS MEASURED IN GAGE
PLANE.
A
A1
A2
b
0.05
0.95
0.17
0.09
6.90
8.80
6.90
8.80
—
0.002
0.037
0.006
0.003
0.271
0.346
0.271
0.346
—
—
—
3.TOLERANCE 0.10mm UNLESS
OTHERWISE SPECIFIED.
1.00
0.22
—
0.039
0.008
—
4. CONTROLLING DIMENSION IS
MILLIMETER CONVERTED INCH
DIMENSIONS ARE NOT NECESSARILY
EXACT.
C
D1
D
7.00
9.00
7.00
9.00
0.5(TYP)
0.6
0.275
0.354
0.275
0.354
0.02(TYP)
0.024
0.039(REF)
3.5˚
5.DIE PA D EXPOSURE SIZE IS ACCORING
TO LEAD FRAME DESIGN.
E1
E
6.FOLLOWED FORM JEDEC MO-136.
e
L
0.45
—
0.75
—
0.018
—
0.029
—
L1
Q1
ccc
1.00(REF)
3.5˚
0˚
7˚
0˚
7˚
0.08
0.003
—
—
—
—
E-CMOS Corp. (www.ecmos.com.tw)
Page 11 of 12
2007/06/29
EC5579
18+1 Channel Voltage Buffers for TFT LCD
OUTLINE DIMENSIONS (Dimensions shown in millimeters)
H: Exposed pad (3.05x3.05 mm)
THERNALLY ENHANCED DINENSIONS (SHOW IN WW)
PAD SIZE
E2
D2
MIN.
3.05
MAX.
4.06
MIN.
3.05
MAX.
4.06
160X16E
NOTE
DIMN
MM
NOM
MIN
—
MAX
1.20
0.15
1.05
0.23
0.16
1. JEDEC OUTLINE:
NS-026 ABC
A
A1
A2
b
—
0.05
0.95
0.17
0.09
—
NS-026 ABC-HD (THERNALLY ENHANCED VARIATIONS ONLY)
2. DATUN PLANE H IS LOCATED AT THE BOTTOM OF THE MOLE
PATTING LINE COINCIDENT WITH WHERE THE LEAD EXITS THE
BODY.
1.00
0.20
c
—
3. DIMENSIONS D1 AND E1 DO NOR INCLUDE MOLD
PROTRUSION.ALLOWABLE PROTRUSION IS 0.25mm PER
SIDE.DIMENSICNS D1 AND E1 DO INCLUDE MOLD MISWATCH
AND ARE DETERMINED AT DATUN PLANE H
D
9.00 BSC
7.00 BSC
9.00 BSC
7.00 BSC
0.50 BSC
0.60
D1
E
4.DINENSION b DOES NOT INCLUDE DANBAR PROTRUSION.
E1
e
L
0.45
0.75
L1
Q
1.00(REF)
3.5˚
0˚
7˚
E-CMOS Corp. (www.ecmos.com.tw)
Page 12 of 12
2007/06/29
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