EC738205B3R [E-CMOS]
20V,4A Dual N-Channel MOSFET;
| 型号： | EC738205B3R |
| 厂家： | 
E-CMOS Corporation |
| 描述： | 20V,4A Dual N-Channel MOSFET |
| 文件： | 总7页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC738205
20V、4A Dual N-Channel MOSFET
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use
in buttery protection, power switching application and a wide variety of other applications.
Features and Benefits:
ꢀ Advanced trench MOSFET process technology
ꢀ Special designed for buttery protection , load switching and
general power management
ꢀ Ultra low on-resistance with low gate charge
ꢀ Fast switching and reverse body recovery
ꢀ 150℃ operating temperature
Main Product Characteristics:
20V
20mꢀ (typ.)
4A
V
DSS
R
DS(on)
I
D
Absolute Maximum Ratings
Parameter
Symbol
Limit
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
20
±10
V
4
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
25
A
Maximum Power Dissipation
PD
1.25
W
℃
Operating Junction and Storage Temperature Range
T
J
,TSTG
-55 To 150
Thermal Resistance
℃/W
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 7
4L04N-Rev.F001
EC738205
20V、4A Dual N-Channel MOSFET
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVDSS
V
GS=0V I
D
=250ꢁA
V
IDSS
V
DS=20V,VGS=0V
1
ꢁA
nA
IGSS
V
GS=±10V,VDS=0V
±100
VGS(th)
V
DS=VGS,I
GS=4V, I
GS=2.5V, I
DS=5V,I =4A
D
=250ꢁA
=4A
=3A
0.5
0.8
20
25
10
1.2
30
45
V
V
D
mꢀ
mꢀ
S
Drain-Source On-State Resistance RDS(ON)
V
D
Forward Transconductance
gFS
V
D
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
800
155
125
PF
PF
PF
V
DS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
18.3
4.8
43.5
20
nS
nS
nS
nS
nC
nC
nC
V
DD=10V,I
D
=1A
V
GS=4V,RGEN=10ꢀ
td(off)
tf
Qg
11
VDS=10V,I
D
=4A,
Qgs
Qgd
2.2
2.5
VGS=4V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
V
GS=0V,I
S
=2A
0.8
1.2
2
V
A
I
S
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 7
4L04N-Rev.F001
EC738205
20V、4A Dual N-Channel MOSFET
Test circuits and Waveforms
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300ꢁs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 7
4L04N-Rev.F001
EC738205
20V、4A Dual N-Channel MOSFET
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 7
4L04N-Rev.F001
EC738205
20V、4A Dual N-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 7
4L04N-Rev.F001
EC738205
20V、4A Dual N-Channel MOSFET
Ordering and Marking Information
EC738205 XX X
R：Tape & Reel
B3＝SOT23 6L
Part Number
Package
Marking
8205
SOT23-6L
EC738205B3R
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 7
4L04N-Rev.F001
EC738205
20V、4A Dual N-Channel MOSFET
SOT23-6L Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 7 of 7
4L04N-Rev.F001
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