EH2520ETTTS-29.498928MTR [ECLIPTEK]

CRYSTAL OSCILLATOR, CLOCK, CMOS OUTPUT;
EH2520ETTTS-29.498928MTR
型号: EH2520ETTTS-29.498928MTR
厂家: Ecliptek    Ecliptek
描述:

CRYSTAL OSCILLATOR, CLOCK, CMOS OUTPUT

输出元件
文件: 总10页 (文件大小:935K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ecliptek | EH25 Series Oscillator  
http://www.ecliptek.com/oscillators/EH25/  
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EH25 Series Oscillator  
Quartz Crystal Clock Oscillators XO (SPXO) HCMOS/TTL (CMOS) 5.0Vdc 4 Pad 5.0mm x 7.0mm Ceramic Surface Mount (SMD)  
2011/65 +  
168 SVHC  
2015/863  
Revision G 06/08/2012  
ectrical Specifications  
Nominal Frequency  
1.000MHz to 155.520MHz  
Some frequencies within this range may not be available.  
requency Tolerance/Stability  
(Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency  
Stability over the Operating Temperature Range, Supply Voltage  
Change, Output Load Change, First Year Aging at 25°C, Shock, and  
Vibration)  
±100ppm Maximum  
±50ppm Maximum  
±25ppm Maximum  
±20ppm Maximum  
ging at 25°C  
±5ppm/year Maximum  
Operating Temperature Range  
0°C to +70°C  
-40°C to +85°C  
upply Voltage  
nput Current  
5.0V  
±10%  
DC  
No Load  
50mA Maximum  
Output Voltage Logic High (V  
)
OH  
I
= -16mA  
OH  
2.4V  
Load  
Minimum with TTL Load, V -0.4V  
DD  
Minimum with HCMOS  
DC  
DC  
Output Voltage Logic Low (V  
uty Cycle  
)
I
= +16mA  
OL  
OL  
0.4V  
Maximum with TTL Load, 0.5V  
Maximum with HCMOS Load  
DC  
DC  
50 ±10(%) Measured at 1.4V  
with TTL Load or at 50% of waveform  
DC  
with HCMOS Load from 1MHz to 70MHz Measured at 50% of waveform  
above 70MHz  
50 ±5(%) Measured at 50% of waveform  
ise Time/Fall Time  
oad Drive Capability  
Measured at 0.8V  
to 2.0V with TTL Load; Masured at 20% to 80%  
DC  
DC  
of waveform with HCMOS Load  
6nSec Maximum from 1MHz to 70MHz  
4nSec Maximum from 70.000001MHz to 155.520MHz  
10 TTL Load or 50pF HCMOS Load Maximum from 1MHz to 70MHz  
5 TTL Load or 15pF HCMOS Load Maximum from 70.000001MHz to  
155.520MHz  
Output Logic Type  
in 1 Connection  
CMOS  
Tri-State (High Impedance)  
ri-State Input Voltage (Vih and Vil)  
+2.2V  
Minimum to Enable Output, +0.8V  
Maximum to Disable  
DC  
DC  
Output (High Impedance), No Connect to Enable Output  
bsolute Clock Jitter  
±250pSec Maximum, ±100pSec Typical  
One Sigma Clock Period Jitter  
±50pSec Maximum, ±30pSec Typical  
1 of 10  
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tart Up Time  
10mSec Maximum  
-55°C to +125°C  
torage Temperature  
2 of 10  
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echanical Dimensions  
Dimensions in Millimeters  
1: Tri-State  
2: Case/Ground  
3: Output  
4: Supply Voltage  
arking Specifications  
e 1:  
e 2:  
ECLIPTEK  
XXXXXXM  
XXXXXX = Nominal Frequency (5 Digits + Decimal)  
M = Frequency unit of measure (MHz)  
e 3:  
XXXXX  
XXXXX = Ecliptek Manufacturing Identifier  
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vironmental and Mechanical Specifications  
D Susceptibility  
e Leak Test  
MIL-STD-883, Method 3015, Class 1, HBM:1500V  
MIL-STD-883, Method 1014, Condition A  
UL94-V0  
mmability  
oss Leak Test  
MIL-STD-883, Method 1014, Condition C  
MIL-STD-883, Method 2002, Condition B  
MIL-STD-883, Method 1004  
chanical Shock  
isture Resistance  
isture Sensitivity  
sistance to Soldering Heat  
sistance to Solvents  
lderability  
J-STD-020, MSL 1  
MIL-STD-202, Method 210, Condition K  
MIL-STD-202, Method 215  
MIL-STD-883, Method 2003  
mperature Cycling  
bration  
MIL-STD-883, Method 1010, Condition B  
MIL-STD-883, Method 2007, Condition A  
42°C/W (degrees Celsius per Watt)  
ermal Resistance (θ  
ermal Resistance (θ  
)
)
JA  
JC  
15°C/W (degrees Celsius per Watt)  
4 of 10  
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pe & Reel Dimensions  
00 pieces per reel  
mpliant to EIA-481  
Dimensions in Millimeters  
5 of 10  
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st Circuit for TTL Output  
te 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency ceramic bypass  
pacitor close to the package ground and V pin is required.  
DD  
te 2: A low capacitance (<12pF), 10X attentuation factor, high impedance (>10Mohms), and high bandwidth (>300MHz)  
ssive probe is recommended.  
te 3: Capacitance value C includes sum of all probe and fixture capacitance.  
L
te 4: Resistance value R is shown in Table 1. See applicable specification sheet for ‘Load Drive Capability’.  
L
te 5: All diodes are MMBD7000, MMBD914, or equivalent.  
st Circuit for CMOS Output  
te 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency ceramic bypass  
pacitor close to the package ground and V  
pin is required.  
DD  
te 2: A low capacitance (<12pF), 10X attentuation factor, high impedance (>10Mohms), and high bandwidth (>300MHz)  
ssive probe is recommended.  
te 3: Capacitance value C includes sum of all probe and fixture capacitance.  
L
6 of 10  
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commended Solder Pad Dimensions  
erances = ±0.1  
Dimensions in Millimeters  
7 of 10  
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lder Reflow Profile  
h Temperature Infrared/Convection  
te: Temperatures shown are applied to body of  
vice.  
MAX to T (Ramp-up Rate)  
3°C/Second Maximum  
L
eheat  
Temperature Minimum (T MIN)  
150°C  
S
Temperature Typical (T TYP)  
175°C  
S
Temperature Maximum (T MAX)  
200°C  
S
Time (t )  
60 - 180 Seconds  
3°C/Second Maximum  
S
mp-up Rate (T to T )  
L
P
me Maintained Above:  
Temperature (T )  
217°C  
L
Time (t )  
60 - 150 Seconds  
260°C Maximum for 10 Seconds Maximum  
250°C +0/-5°C  
L
ak Temperature (T )  
P
rget Peak Temperature (T Target)  
P
me within 5°C of actual peak (t )  
P
20 - 40 Seconds  
mp-down Rate  
6°C/Second Maximum  
8 Minutes Maximum  
Level 1  
me 25°C to Peak Temperature (t)  
oisture Sensitivity Level  
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w Temperature Infrared/Convection  
te: Temperatures shown are applied to body of  
vice.  
MAX to T (Ramp-up Rate)  
5°C/Second Maximum  
L
eheat  
Temperature Minimum (T MIN)  
N/A  
S
Temperature Typical (T TYP)  
150°C  
S
Temperature Maximum (T MAX)  
N/A  
S
Time (t )  
60 - 120 Seconds  
5°C/Second Maximum  
S
mp-up Rate (T to T )  
L
P
me Maintained Above:  
Temperature (T )  
150°C  
L
Time (t )  
200 Seconds Maximum  
L
ak Temperature (T )  
240°C Maximum  
P
rget Peak Temperature (T Target)  
240°C Maximum 2 Times / 230°C Maximum 1 Time  
10 Seconds Maximum 2 Times / 80 Seconds Maximum 1 Time  
P
me within 5°C of actual peak (t )  
P
mp-down Rate  
5°C/second Maximum  
me 25°C to Peak Temperature (t)  
oisture Sensitivity Level  
N/A  
Level 1  
h Temperature Manual Soldering  
te: Temperatures listed are applied to body of device.  
0°C Maximum for 5 Seconds Maximum, 2 times Maximum.  
w Temperature Manual Soldering  
te: Temperatures listed are applied to body of device.  
5°C Maximum for 10 Seconds Maximum, 2 times Maximum.  
9 of 10  
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- Build A Part Number  
2 - Next Page  
Select the parameters that meet your requirements and then click  
Next  
Access these Part Number specific  
resources and tools  
Frequency in Megahertz (1 to 155.520):  
Some frequencies within this range may not be  
available  
Frequency Tolerance/Stability:  
Operating Temperature Range:  
Duty Cycle:  
Packaging Options:  
rt Numbering Guide  
TOOLS  
PRODUCT  
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