EPSA23BBJC-3.046875M [ECLIPTEK]

CMOS, Spread Spectrum Quartz Crystal Clock Oscillators LVCMOS (CMOS) 3.3Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD) Spread Spectrum Quartz Crystal Clock Oscillators LVCMOS (CMOS) 3.3Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD);
EPSA23BBJC-3.046875M
型号: EPSA23BBJC-3.046875M
厂家: Ecliptek    Ecliptek
描述:

CMOS, Spread Spectrum Quartz Crystal Clock Oscillators LVCMOS (CMOS) 3.3Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD) Spread Spectrum Quartz Crystal Clock Oscillators LVCMOS (CMOS) 3.3Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD)

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Ecliptek | EPSA23 Series Oscillator  
http://www.ecliptek.com/oscillators/EPSA23/  
Log On | 714-433-1200 | Email Customer Support  
Home  
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EPSA23 Series Oscillator  
Spread Spectrum Quartz Crystal Clock Oscillators LVCMOS (CMOS) 3.3Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount  
(SMD)  
2011/65 +  
168 SVHC  
2015/863  
Revision D 02/27/2015  
ectrical Specifications  
Nominal Frequency  
2.000MHz to 200.000MHz  
Some frequencies within this range may not be available.  
requency Tolerance/Stability  
(Inclusive of all conditions: Frequency Stability over the Operating  
Temperature Range, Supply Voltage Change, Output Load Change,  
First Year Aging at 25°C, Shock, and Vibration)  
±50ppm Maximum  
Operating Temperature Range  
-40°C to +85°C  
upply Voltage (V  
)
DD  
3.3V  
±10%  
DC  
Maximum Supply Voltage  
nput Current  
-0.5V  
to +4.2V  
DC  
DC  
15mA Maximum over Nominal Frequency of 2MHz to 25MHz  
23mA Maximum over Nominal Frequency of 25.000001MHz to 50MHz  
27mA Maximum over Nominal Frequency of 50.000001MHz to 100MHz  
30mA Maximum over Nominal Frequency of 100.000001MHz to  
166MHz  
40mA Maximum over Nominal Frequency of 166.000001MHz to  
200MHz  
Output Voltage Logic High (V  
)
OH  
IOH=-8mA  
90% of V  
Minimum  
Maximum  
DD  
Output Voltage Logic Low (V  
)
IOL=+8mA  
10% of V  
OL  
DD  
uty Cycle  
Measured at 50% of waveform  
50 ±5(%)  
ise Time/Fall Time  
Measured at 10% to 90% of Waveform  
3nSec Maximum  
oad Drive Capability  
Output Logic Type  
15pF Maximum  
CMOS  
Output Control Function  
Tri-State (Disabled Output: High Impedance)  
Power Down (Disabled Output: High Impedance)  
ower Down Input Voltage (Vih and Vil)  
ri-State Input Voltage (Vih and Vil)  
70% of V  
Minimum or No Connection to Enable Output, 30% of V  
DD  
Maximum to Disable Output  
DD  
70% of V  
Minimum or No Connection to Enable Output, 30% of V  
DD  
DD  
Maximum to Disable Output  
ower Down Output Disable Time  
ower Down Output Enable Time  
tandby Current  
100nSec Maximum  
3mSec Maximum  
Unloaded; Pad 1 = Ground  
10µA Maximum (Power Down)  
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ri-State Output Disable Time  
ri-State Output Enable Time  
isable Current  
100nSec Maximum  
100nSec Maximum  
Unloaded; Pad 1 = Ground  
20mA Maximum (Tri-State)  
pread Spectrum  
±0.25% Center Spread  
±0.50% Center Spread  
±0.75% Center Spread  
±1.00% Center Spread  
±1.50% Center Spread  
±2.00% Center Spread  
-0.50% Down Spread  
-1.00% Down Spread  
-1.50% Down Spread  
-2.00% Down Spread  
-3.00% Down Spread  
-4.00% Down Spread  
Modulation Frequency  
eriod Jitter  
30kHz Minimum, 32kHz Typical, 45kHz Maximum  
Cycle to Cycle; Spread Spectrum-On  
100pSec Maximum  
torage Temperature Range  
tart Up Time  
-55°C to +125°C  
10mSec Maximum  
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echanical Dimensions  
Dimensions in Millimeters  
1: Power Down Or Tri-State  
2: Case Ground  
3: Output  
4: Supply Voltage  
arking Specifications  
e 1:  
E XXXXXX  
E = Ecliptek Designator  
XXXXXX = Nominal Frequency in MHz (5 Digits + Decimal)  
e 2:  
XXXXX  
XXXXX = Ecliptek Manufacturing Identifier  
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vironmental and Mechanical Specifications  
D Susceptibility  
e Leak Test  
MIL-STD-883, Method 3015, Class 1, HBM:1500V  
MIL-STD-883, Method 1014, Condition A  
UL94-V0  
mmability  
oss Leak Test  
MIL-STD-883, Method 1014, Condition C  
MIL-STD-883, Method 2002, Condition B  
MIL-STD-883, Method 1004  
chanical Shock  
isture Resistance  
isture Sensitivity  
sistance to Soldering Heat  
sistance to Solvents  
lderability  
J-STD-020, MSL 1  
MIL-STD-202, Method 210, Condition K  
MIL-STD-202, Method 215  
MIL-STD-883, Method 2003  
mperature Cycling  
bration  
MIL-STD-883, Method 1010, Condition B  
MIL-STD-883, Method 2007, Condition A  
40°C/W (degrees Celsius per Watt)  
ermal Resistance (θ  
ermal Resistance (θ  
)
)
JA  
JC  
14°C/W (degrees Celsius per Watt)  
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pe & Reel Dimensions  
00 pieces per reel  
mpliant to EIA-481  
Dimensions in Millimeters  
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MOS Test Circuit  
te 1: An external 0.01µF ceramic bypass capacitor in parallel with a 0.1µF high frequency ceramic bypass capacitor close  
ss than 2mm) to the package ground and supply voltage pin is required.  
te 2: A low capacitance (<12pF), 10X Attentuation Factor, High Impedance (>10Mohms), and High bandwidth  
300MHz) passive probe is recommended.  
te 3: Capacitance value (C ) includes sum of all probe and fixture capacitance.  
L
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commended Solder Pad Dimensions  
erances = ±0.1  
Dimensions in Millimeters  
7 of 10  
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lder Reflow Profile  
h Temperature Infrared/Convection  
te: Temperatures shown are applied to body of  
vice.  
MAX to T (Ramp-up Rate)  
3°C/second Maximum  
L
eheat  
Temperature Minimum (T MIN)  
150°C  
S
Temperature Typical (T TYP)  
175°C  
S
Temperature Maximum (T MAX)  
200°C  
S
Time (t )  
60 - 180 Seconds  
3°C/second Maximum  
S
mp-up Rate (T to T )  
L
P
me Maintained Above:  
Temperature (T )  
217°C  
L
Time (t )  
60 - 150 Seconds  
260°C Maximum for 10 Seconds Maximum  
250°C +0/-5°C  
L
ak Temperature (T )  
P
rget Peak Temperature (T Target)  
P
me within 5°C of actual peak (t )  
P
20 - 40 seconds  
mp-down Rate  
6°C/second Maximum  
8 minutes Maximum  
Level 1  
me 25°C to Peak Temperature (t)  
oisture Sensitivity Level  
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w Temperature Infrared/Convection  
te: Temperatures shown are applied to body of  
vice.  
MAX to T (Ramp-up Rate)  
5°C/second Maximum  
L
eheat  
Temperature Minimum (T MIN)  
N/A  
S
Temperature Typical (T TYP)  
150°C  
S
Temperature Maximum (T MAX)  
N/A  
S
Time (t )  
60 - 120 Seconds  
5°C/second Maximum  
S
mp-up Rate (T to T )  
L
P
me Maintained Above:  
Temperature (T )  
150°C  
L
Time (t )  
200 Seconds Maximum  
L
ak Temperature (T )  
240°C Maximum  
P
rget Peak Temperature (T Target)  
240°C Maximum 2 Times / 230°C Maximum 1 Time  
10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time  
P
me within 5°C of actual peak (t )  
P
mp-down Rate  
5°C/second Maximum  
me 25°C to Peak Temperature (t)  
oisture Sensitivity Level  
N/A  
Level 1  
h Temperature Manual Soldering  
te: Temperatures listed are applied to body of device.  
0°C Maximum for 5 seconds Maximum, 2 times Maximum.  
w Temperature Manual Soldering  
te: Temperatures listed are applied to body of device.  
5°C Maximum for 10 seconds Maximum, 2 times Maximum.  
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- Build A Part Number  
2 - Next Page  
Select the parameters that meet your requirements and then click  
Access these Part Number specific  
resources and tools  
Next  
Frequency in Megahertz (2 to 200):  
Some frequencies within this range may not be  
available  
Output Control Function:  
Spread Spectrum Percentage:  
Packaging Options:  
rt Numbering Guide  
TOOLS  
PRODUCT  
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TERMS  
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Contact  
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