2W08 [EIC]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
2W08
型号: 2W08
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

整流二极管 桥式整流二极管
文件: 总2页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON BRIDGE RECTIFIERS  
WOB  
2W005 - 2W10  
PRV : 50 - 1000 Volts  
Io : 2.0 Amperes  
0.39 (10.0)  
0.31 (7.87)  
FEATURES :  
0.22 (5.59)  
0.18 (4.57)  
AC  
* High case dielectric strength  
* High surge current capability  
* High reliability  
+
-
1.00 (25.4)  
MIN.  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated leads solderable per  
AC  
-
0.22 (5.59)  
0.18 (4.57)  
AC  
+
0.22 (5.59)  
0.18 (4.57)  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimension in inches and (millimeter)  
* Weight : 1.29 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherw ise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 2W005 2W01 2W02 2W04 2W06 2W08 2W10 UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000 Volts  
700 Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
100  
1000 Volts  
0.375" (9.5 mm) lead length  
Tc = 25 C  
IF(AV)  
2.0  
Amps.  
°
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Rating for fusing ( t < 8.3 ms. )  
IFSM  
50  
10  
1.0  
10  
1.0  
24  
36  
Amps.  
I2t  
A2S  
Maximum Forward Voltage per Diode at IF = 1.0 Amp.  
VF  
Volts  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 C  
IR  
A
m
°
Ta = 100 C  
IR(H)  
CJ  
mA  
pf  
°
Typical Junction Capacitance per Diode (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
C/W  
°
R JA  
q
TJ  
- 50 to + 150  
- 50 to + 150  
C
C
°
°
TSTG  
Notes :  
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board w ith, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.  
UPDATE : APRIL 23,1998  
RATING AND CHARACTERISTIC CURVES ( 2W005 - 2W10 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
50  
40  
30  
20  
2.0  
1.6  
PC Board  
0.375(9.5mm)  
TJ = 55  
C
°
Copper Pads  
0.22" x 0.22" (5.5 x5.5mm)  
1.2  
0.8  
SINGLE HALF SINE WAVE  
(JEDEC METHOD)  
0.4  
0
10  
0
60 Hz, Resistive or Inductive load.  
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, ( C)  
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
20  
10  
10  
1.0  
TJ = 100  
C
°
1
TJ = 25  
C
°
0.1  
0.1  
TJ = 25  
C
°
Pulse Width = 300  
1 % Duty Cycle  
s
m
0.01  
0.01  
0
20  
40  
60  
80  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
100  
120  
140  
FORWARD VOLTAGE, VOLTS  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  

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