FBR1000_05 [EIC]
FAST RECOVERY; 快速恢复
| 型号： | FBR1000_05 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | FAST RECOVERY |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST RECOVERY
BRIDGE RECTIFIERS
FBR1000 - FBR1010
PRV : 50 - 1000 Volts
Io : 10 Amperes
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
FEATURES :
AC
* High case dielectric strength
* High surge current capability
* High reliability
0.77 (19.56)
0.73 (18.54)
* Low reverse current
0.290 (7.36)
* Low forward voltage drop
* Fast switching for high efficiency
0.210 (5.33)
AC
* Ideal for printed circuit board
* Pb / RoHS Free
0.052 (1.32)
0.048 (1.22)
MECHANICAL DATA :
0.75 (19.1)
Min.
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
* Weight : 6.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FBR FBR FBR FBR FBR FBR FBR
1000 1001 1002 1004 1006 1008 1010
SYMBOL
UNIT
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
V
V
V
A
70 140 280 420 560 700
Maximum DC Blocking Voltage
100 200 400 600 800 1000
10
IF(AV)
Maximum Average Forward Current Tc = 55 °C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
250
A
I2t
VF
A2S
V
160
1.3
10
Maximum Forward Voltage drop per Diode at IF = 5.0 A
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
IR(H)
Trr
200
Ta = 100 °C
mA
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
150
250
500
ns
2.5
°C/W
°C
RqJC
TJ
- 50 to + 150
- 50 to + 150
TSTG
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( FBR1000 - FBR1010 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
RECTIFIED CURRENT
250
10
8
Tc = 55 °C
200
150
6
4
100
50
2
0
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
10
10
Pulse Width = 300 ms
2% Duty Cycle
TJ = 100 °C
TJ = 25 °C
1.0
0.1
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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