FBR5000_05 [EIC]
FAST RECOVERY; 快速恢复
| 型号： | FBR5000_05 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | FAST RECOVERY |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST RECOVERY
BRIDGE RECTIFIERS
FBR5000 - FBR5010
PRV : 50 - 1000 Volts
Io : 50 Amperes
BR50
0.728(18.50)
0.688(17.40)
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
1.130(28.70)
1.120(28.40)
0.570(14.50)
0.530(13.40)
* Low reverse current
* Low forward voltage drop
0.685(16.70)
0.618(15.70)
* Fast switching for high efficiency
* Pb / RoHS Free
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
MECHANICAL DATA :
0.252(6.40)
0.248(6.30)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
f
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FBR FBR FBR FBR FBR FBR FBR
5000 5001 5002 5004 5006 5008 5010
RATING
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
200
140
200
400
280
400
50
600
420
600
800
560
800
1000
V
V
V
A
70
700
Maximum DC Blocking Voltage
100
1000
IF(AV)
Maximum Average Forward Current Tc = 55 C
°
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
400
664
1.3
10
A
A2S
Maximum Forward Voltage drop per Diode at IF = 25 A
VF
V
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 C
A
m
°
IR(H)
Trr
1.0
mA
Ta = 100 C
°
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
200
300
500
ns
1
R JC
q
C/W
°
TJ
- 50 to + 150
- 50 to + 150
C
C
°
°
TSTG
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( FBR5000 - FBR5010 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 50/200 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
500
50
40
Tc = 55 °C
400
300
200
100
0
30
20
10
0
60Hz RESISTIVE OR INDUCTIVE LOAD
25 50 75 100 125
0
150
175
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
10
10
TJ = 100 °C
1.0
0.1
1.0
0.1
TJ = 25 °C
Pulse Width = 300 ms
2% Duty Cycle
0.01
TJ = 25 °C
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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