FBR5006W [EIC]

FAST RECOVERY BRIDGE RECTIFIERS; 快恢复整流桥


型号：	FBR5006W
厂家：	EIC DISCRETE SEMICONDUCTORS
描述：	FAST RECOVERY BRIDGE RECTIFIERS 快恢复整流桥整流二极管桥式整流二极管快速恢复二极管
文件：	总2页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FAST RECOVERY

BRIDGE RECTIFIERS

FBR5000W - FBR5010W

PRV : 50 - 1000 Volts

Io : 50 Amperes

BR50W

0.732 (18.6)

0.692 (17.5)

FEATURES :

* High case dielectric strength

* High surge current capability

* High reliability

1.130 (28.7)

0.470 (11.9)

1.120 (28.4)

0.430 (10.9)

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

0.21 (5.3)

0.20 (5.1)

MECHANICAL DATA :

0.042 (1.06)

0.038 (0.96)

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink

with silicone thermal compound between

bridge and mounting surface for maximum

heat transfer efficiency

1.2 (30.5)

MIN.

0.310 (7.87)

0.280(7.11)

Dimensions in inches and ( millimeters )

* Weight : 15.95 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

FBR

RATING

SYMBOL

UNIT

5000W 5001W 5002W 5004W 5006W 5008W 5010W

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

V_RMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

I_F(AV)

Maximum Average Forward Current Tc = 55

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

I_FSM

400

I²t

V_F

A²S

664

1.3

Maximum Forward Voltage drop per Diode at I_F= 25 A

I_R

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25

I_R(H)

Trr

1.0

Ta = 100

Maximum Reverse Recovery Time (Note 1)

Typical Thermal Resistance per diode (Note 2)

Operating Junction Temperature Range

Storage Temperature Range

200

300

500

R JC

C/W

T_J

- 50 to + 150

T_STG

Notes :

1 ) Measured with I_F= 0.5 Amp., I_R= 1 Amp., Irr = 0.25 Amp.

2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.

Page 1 of 2

Rev. 01 : April 2, 2002

RATING AND CHARACTERISTIC CURVES ( FBR5000W - FBR5010W )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

Trr

50 W

10 W

+ 0.5

D.U.T.

PULSE

GENERATOR

( NOTE 2 )

- 0.25

50 Vdc

(approx)

OSCILLOSCOPE

( NOTE 1 )

1 W

- 1.0 A

SET TIME BASE FOR 50/200 ns/cm

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

FIG.2 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

500

Tc = 55 °C

400

300

200

100

60Hz RESISTIVE OR INDUCTIVE LOAD

25 50 75 100 125

150

175

40 60 100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, ( C)

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

PER DIODE

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE

100

T_J= 100 °C

1.0

0.1

1.0

0.1

T_J= 25 °C

Pulse Width = 300 ms

2% Duty Cycle

0.01

T_J= 25 °C

100

120

140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE, VOLTS

Page 2 of 2

Rev. 01 : April 2, 2002

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