FES16HT [EIC]
Ultrafast Plastic Rectifiers; 超快塑胶整流器
| 型号： | FES16HT |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | Ultrafast Plastic Rectifiers |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultrafast Plastic Rectifiers
FES16AT - FES16JT
TO-220AC
PRV : 50 - 600 Volts
Io : 16 Ampere
0.154(3.91)DIA.
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.415(10.54)MAX.
0.055(1.39)
0.045(1.14)
0.113(2.87)
0.103(2.62)
FEATURES :
0.145(3.68)
0.135(3.43)
* High current capability
* High surge current capability
* Low leakage, high voltage
* Glass passivated chip junction
0.603(15.32)
0.573(14.55)
0.635(16.13)
0.625(15.87)
0.350(8.89)
0.330(8.39)
1
2
0.160(4.06)
0.140(3.56)
* Pb / RoHS Free
PIN 1
0.560(14.22)
0.530(13.46)
CASE
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
PIN 2
0.037(0.94)
0.027(0.68)
0.022(0.56)
0.014(0.36)
0.205(520)
0.195(4.95)
Dimensions in inches and ( millimeters )
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
FES FES FES FES FES FES FES FES
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
RATING
SYMBOL
UNIT
VRRM
VRMS
VDC
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
70
Maximum DC Blocking Voltage
100
IF(AV)
Maximum Average Forward Current, Tc = 100°C
Maximum Peak Forward Surge Current
16
IFSM
250
A
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at Tc = 100°C
Maximum Instantaneous Forward Voltage at IF = 16 A
VF
IR
0.975
1.3
1.5
V
mA
mA
ns
Maximum Reverse Current at
Rated DC Blocking Voltage
Tc = 25 °C
10
IR(H)
Trr
Tc = 100 °C
500
Maximum Reverse Recovery Time ( Note 1 )
Typical junction capacitance at 4V, 1MHz
Maximum Thermal Resistance, Junction to Case
Operating storage and temperature range
35
50
Cj
175
145
pF
RθJC
TJ, TSTG
1.2
°C/W
°C
- 65 to + 150
Note :
(1) Reverse Recovery Test Conditions : IF = 0.5A, IR = 1A ; Irr = 0.25 A
Page 1 of 2
Rev. 02 : March 31, 2005
RATING AND CHARACTERISTIC CURVES ( FES16AT ~ FES16JT )
FIG.1 - FORWARD CURRENT
DERATING CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
300
250
20
24
20
TJ =TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC) Method
16
12
150
100
8
4
50
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10 20
40
60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL INSTANTANEOUS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
FORWARD CHARACTERISTICS
100
100
FES16AT - FES16DT
FES16FT - FES16GT
TJ = 100 °C
10
10
1
FES16HT - FES16JT
1
TJ = 25 °C
TJ = 25 °C
Pulse Width = 300 ms
1% Duty Cycle
0.1
0.1
0
0.4 0.6
0.2
0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
20
40
60
80
100
120 140
INSTANTANEOUS FORWARD
VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, (%)
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25°C
f = 1.0 MHz
Vsig = 50 mVp-p
FES16AT - FES16GT
FES16HT - FES16JT
100
0
100
0.1
1
10
REVERSE VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 31, 2005
相关型号：
FES16HT-45
Rectifier Diode, 1 Phase, 1 Element, 16A, 500V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
VISHAY
FES16HT-E3/45
DIODE 16 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
FES16HT-HE3/45
DIODE 16 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
FES16JT-45
Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
VISHAY
©2020 ICPDF网 联系我们和版权申明