HER502 [EIC]

HIGH EFFICIENT RECTIFIER DIODES; 高产高效整流二极管


型号：	HER502
厂家：	EIC DISCRETE SEMICONDUCTORS
描述：	HIGH EFFICIENT RECTIFIER DIODES 高产高效整流二极管整流二极管高效整流二极管功效
文件：	总2页 (文件大小：50K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HIGH EFFICIENT

RECTIFIER DIODES

HER501 - HER508

PRV : 50 - 1000 Volts

Io : 5.0 Amperes

DO-201AD

FEATURES :

1.00 (25.4)

* High current capability

* High surge current capability

* High reliability

0.21 (5.33)

MIN.

0.19 (4.82)

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

0.375 (9.52)

0.285 (7.24)

1.00 (25.4)

MIN.

MECHANICAL DATA :

0.052 (1.32)

0.048 (1.22)

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 1.16 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

HER

501

HER

502

HER

503

HER

504

HER

505

HER

506

HER

507

HER

508

RATING

SYMBOL

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

Maximum Average Forward Current

100

1000

IF(AV)

5.0

0.375"(9.5mm) Lead Length

Ta = 55 °C

Maximum Peak Forward Surge Current,

8.3ms Single half sine wave superimposed

on rated load (JEDEC Method)

IFSM

200

Maximum Forward Voltage at IF = 5.0 A

1.1

1.7

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

Ta = 100 °C

IR(H)

Trr

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

- 65 to + 150

°C

Storage Temperature Range

TSTG

Notes :

( 1 ) Reverse Recovery Test Conditions : I_F= 0.5 A, I_R= 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V_DC

Page 1 of 2

Rev. 01 : April 2, 2002

RATING AND CHARACTERISTIC CURVES ( HER501 - HER508 )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

Trr

50 W

10 W

+ 0.5 A

D.U.T.

PULSE

GENERATOR

( NOTE 2 )

- 0.25 A

50 Vdc

(approx)

OSCILLOSCOPE

( NOTE 1 )

1 W

- 1.0 A

SET TIME BASE FOR 25-35 ns/cm

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

1 cm

FIG.2 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

200

160

120

8.3 ms SINGLE HALF SINE WAVE

Ta = 50 °C

60Hz RESISTIVE OR INDUCTIVE LOAD

100

125

150

175

60 100

NUMBER OF CYCLES AT 60Hz

AMBIENT TEMPERATURE, ( C)

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

100

Pulse Width = 300 ms

T_J= 100 °C

2% Duty Cycle

T_J= 25 °C

1.0

HER501-HER505

HER506-HER508

0.1

1.0

T_J= 25 °C

0.1

0.01

100

120

140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE, VOLTS

Page 2 of 2

Rev. 01 : April 2, 2002

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