RBV3501 [EIC]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器


型号：	RBV3501
厂家：	EIC DISCRETE SEMICONDUCTORS
描述：	SILICON BRIDGE RECTIFIERS 硅桥式整流器整流二极管桥式整流二极管
文件：	总2页 (文件大小：21K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SILICON BRIDGE RECTIFIERS

RBV3500 - RBV3510

RBV25

PRV : 50 - 1000 Volts

Io : 35 Amperes

3.9 ± 0.2

30 ± 0.3

4.9 ± 0.2

FEATURES :

Æ 3.2 ± 0.1

* High current capability

* High surge current capability

* High reliability

* Low reverse current

~ ~

* Low forward voltage drop

* High case dielectric strength of 2000 VDC

* Ideal for printed circuit board

* Very good heat dissipation

1.0 ± 0.1

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

2.0 ± 0.2

0.7 ± 0.1

7.5 7.5

±0.2 ±0.2 ±0.2

Dimensions in millimeters

* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RBV

SYMBOL

RATING

UNIT

3500 3501 3502 3504 3506 3508 3510

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 Volts

700 Volts

Maximum DC Blocking Voltage

100

1000 Volts

Amps.

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

IF(AV)

IFSM

I²t

400

660

1.1

Amps.

A²S

Volts

Maximum Forward Voltage per Diode at IF = 17.5 Amps.

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Ta = 25 °C

Ta = 100 °C

IR(H)

200

1.5

°C/W

°C

RqJC

Operating Junction Temperature Range

Storage Temperature Range

TSTG

- 40 to + 150

°C

Notes :

1. Thermal Resistance from junction to case with units mounted on heatsink.

UPDATE : AUGUST 3, 1998

RATING AND CHARACTERISTIC CURVES ( RBV3500 - RBV3510 )

FIG.1 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

600

500

400

TJ = 50 °C

300

200

100

8.3 ms SINGLE HALF SINE WAVE

JEDEC METHOD

P.C. Board Mounted with

SINE WAVE R-Load

100

125

150

175

60 100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, ( °C)

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE

100

TJ = 100 °C

1.0

Pulse Width = 300 ms

1 % Duty Cycle

0.1

TJ = 25 °C

1.0

TJ = 25 °C

0.01

0.1

100

120

140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

FORWARD VOLTAGE, VOLTS

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