RBV608D [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | RBV608D |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
RBV25
Io : 6.0 Amperes
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
FEATURES :
* High current capability
Æ3.2 ± 0.1
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
+
~ ~
* Very good heat dissipation
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
10
7.5 7.5
2.0 ± 0.2
0.7 ± 0.1
±0.2 ±0.2 ±0.2
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in millimeters
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
RBV
RBV
RBV
RBV
RBV
RBV
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
VRRM
UNIT
600D 601D 602D 604D 606D 608D 610D
50
35
50
100
70
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000 Volts
700
Volts
VRMS
Maximum DC Blocking Voltage
VDC
100
1000 Volts
Amps.
Maximum Average Forward Current Tc = 55 C
IF(AV)
°
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
300
127
1.0
10
Amps.
I2t
A2S
Maximum Forward Voltage per Diode at IF = 6.0 Amps.
VF
Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
IR
A
m
°
Ta = 100 C
IR(H)
200
2.2
A
m
°
C/W
R JC
q
°
Operating Junction Temperature Range
Storage Temperature Range
TJ
C
- 40 to + 150
- 40 to + 150
°
TSTG
C
°
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
UPDATE : AUGUST 3, 1998
RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
240
6.0
200
5.0
4.0
3.0
2.0
160
120
TJ = 50 °C
80
40
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
1.0
0
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
10
100
TJ = 100 °C
1.0
10
Pulse Width = 300 ms
1 % Duty Cycle
0.1
1.0
TJ = 25 °C
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
FORWARD VOLTAGE, VOLTS
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