RM10_05 [EIC]

SILICON RECTIFIER DIODES; 硅整流二极管
RM10_05
型号: RM10_05
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON RECTIFIER DIODES
硅整流二极管

整流二极管
文件: 总2页 (文件大小:44K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON RECTIFIER DIODES  
RM10 - RM10Z  
D2  
PRV : 200 - 800 Volts  
Io : 1.2 - 1.5 Amperes  
FEATURES :  
1.00 (25.4)  
0.161 (4.10)  
MIN.  
* High current capability  
* High surge current capability  
* High reliability  
0.154 (3.90)  
0.284 (7.20)  
0.268 (6.84)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.00 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : D2 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.465 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL RM10Z  
RM10  
RM10A  
RM10B  
UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 70 °C  
Peak Forward Surge Current  
IF  
1.5  
1.2  
A
IFSM  
120  
150  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 1.5 Amps.  
VF  
IR  
0.91  
10  
V
mA  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
IR(H)  
CJ  
50  
Ta = 100 °C  
mA  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
30  
pF  
50  
°C/W  
°C  
RqJA  
TJ  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
Page 1 of 2  
Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES ( RM10 - RM10Z )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
150  
120  
90  
1.5  
1.2  
RM10Z  
8.3 ms SINGLE HALF SINE WAVE  
Ta = 50 °C  
RM10 - RM10B  
RM10 - RM10B  
0.9  
0.6  
0.3  
60  
RM10Z  
30  
60 Hz RESISTIVE OR INDUCTIVE LOAD  
0
0
0
25  
50  
75  
100 125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( C)  
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
100  
10  
10  
TJ = 100 °C  
1.0  
0.1  
1.0  
TJ = 25 °C  
Pulse Width = 300 ms  
2% Duty Cycle  
0.01  
0
40  
60  
80  
20  
100  
120  
140  
0.1  
TJ = 25 °C  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
0.01  
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
FORWARD VOLTAGE, VOLTS  
Page 2 of 2  
Rev. 02 : March 25, 2005  

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