RM11A [EIC]
SILICON RECTIFIER DIODES; 硅整流二极管型号: | RM11A |
厂家: | EIC DISCRETE SEMICONDUCTORS |
描述: | SILICON RECTIFIER DIODES |
文件: | 总2页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SILICON RECTIFIER DIODES
PRV : 600 - 1000 Volts
Io : 1.2 Amperes
D2
FEATURES :
1.00 (25.4)
0.161 (4.10)
MIN.
* High current capability
* High surge current capability
* High reliability
0.154 (3.90)
0.284 (7.20)
0.268 (6.84)
* Low reverse current
* Low forward voltage drop
1.00 (25.4)
0.034 (0.86)
MIN.
MECHANICAL DATA :
* Case : D2 Molded plastic
0.028 (0.71)
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VRRM
RM11A
600
RM11B
800
RM11C
1000
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRMS
420
560
700
Maximum DC Blocking Voltage
VDC
600
800
1000
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current
IF
1.2
A
IFSM
100
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
VF
IR
0.92
V
mA
10
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Ta = 25 °C
IR(H)
CJ
50
30
Ta = 100 °C
mA
pF
50
°C/W
°C
RqJA
TJ
- 65 to + 175
- 65 to + 175
TSTG
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : Mar 23, 2002
RATING AND CHARACTERISTIC CURVES ( RM11A - RM11C )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
80
1.5
1.2
8.3 ms SINGLE HALF SINE WAVE
0.9
0.6
0.3
60
Ta = 50 °C
40
20
RESISTIVE OR INDUCTIVE LOAD
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
10
10
TJ = 100 °C
1.0
0.1
1.0
0.1
TJ = 25 °C
Pulse Width = 300 ms
2% Duty Cycle
0.01
0
40
60
80
100
120
140
20
TJ = 25 °C
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : Mar 23, 2002
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