RM4Y [EIC]

SILICON RECTIFIER DIODES; 硅整流二极管
RM4Y
型号: RM4Y
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON RECTIFIER DIODES
硅整流二极管

整流二极管
文件: 总2页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON RECTIFIER DIODES  
RM4 - RM4Z  
DO - 201AD  
PRV : 100 - 400 Volts  
Io : 1.7 Ampere  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
0.19 (4.83)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
0.375 (9.53)  
0.285 (7.24)  
MECHANICAL DATA :  
1.00 (25.4)  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.052 (1.32)  
MIN.  
0.048 (1.22)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.21 grams  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specifie.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
Maximum Reverse Voltage  
SYMBOL  
VRM  
RM4Y  
100  
RM4Z  
200  
RM4  
400  
UNIT  
V
V
A
Maximum Peak Reverse Surge Voltage  
Maximum Average Forward Current  
VRSM  
150  
250  
450  
IF(AV)  
1.7 (3.0 A is with Heatsink)  
200  
Maximum Peak Forward Surge Current  
Half-cycle Sine wave, 50 Hz, Single Shot  
IFSM  
A
Maximum Forward Voltage at IF = 3.0 A  
VF  
IR  
0.95  
10  
V
Maximum Reverse Current  
at VR = VRmax.  
Ta = 25 °C  
Ta = 150 °C  
μA  
μA  
°C  
°C  
IR(H)  
TJ  
50  
Junction Temperature Range  
Storage Temperature Range  
- 40 to + 150  
- 40 to + 150  
TSTG  
Page 1 of 2  
Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES ( RM4 - RM4Z )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
200  
160  
120  
80  
3.75  
3.00  
20x20x1t Heatsink on both sides  
5 mm  
5 mm  
2.25  
1.50  
0.75  
0
40  
0
Without Heatsink  
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
100  
10  
10  
TJ = 100 °C  
1.0  
Ta = 25 °C  
0.1  
1.0  
0.1  
TJ = 25 °C  
0.01  
0
40  
60  
80  
100  
120  
140  
20  
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
FORWARD VOLTAGE, VOLTS  
Page 2 of 2  
Rev. 02 : March 25, 2005  

相关型号:

RM4YV

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4YV1

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4YV3

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4YVO

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4YW

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4YWK

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4YWS

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4Z

SILICON RECTIFIER DIODES
EIC

RM4Z

Rectifier Diodes
SANKEN

RM4ZV

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4ZV1

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN

RM4ZV3

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
SANKEN