EDJ1108BABG-GL-E [ELPIDA]
1G bits DDR3 SDRAM; 1G位DDR3 SDRAM
| 型号： | EDJ1108BABG-GL-E |
| 厂家： | 
ELPIDA MEMORY |
| 描述： | 1G bits DDR3 SDRAM |
| 文件： | 总148页 (文件大小：1878K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
1G bits DDR3 SDRAM
EDJ1108BABG (128M words × 8 bits)
EDJ1116BABG (64M words × 16 bits)
Features
Specifications
• Density: 1G bits
• Double-data-rate architecture; two data transfers per
clock cycle
Organization
• The high-speed data transfer is realized by the 8 bits
16M words × 8 bits × 8 banks (EDJ1108BABG)
8M words × 16 bits × 8 banks (EDJ1116BABG)
• Package
78-ball FBGA (EDJ1108BABG)
96-ball FBGA (EDJ1116BABG)
Lead-free (RoHS compliant)
• Power supply: VDD, VDDQ = 1.5V ± 0.075V
• Data rate
1600Mbps/1333Mbps/1066Mbps/800Mbps (max.)
• 1KB page size (EDJ1108BABG)
Row address: A0 to A13
Column address: A0 to A9
• 2KB page size (EDJ1116BABG)
Row address: A0 to A12
Column address: A0 to A9
• Eight internal banks for concurrent operation
• Interface: SSTL_15
• Burst lengths (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
Sequential (8, 4 with BC)
Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
• /CAS Write Latency (CWL): 5, 6, 7, 8
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
Synchronous ODT
Dynamic ODT
Asynchronous ODT
• Multi Purpose Register (MPR) for temperature read
out
• ZQ calibration for DQ drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• /RESET pin for Power-up sequence and reset
function
• Precharge: auto precharge option for each burst
• SRT range:
access
Normal/extended
Auto/manual self-refresh
• Programmable Output driver impedance control
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Refresh cycles
Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Operating case temperature range
TC = 0°C to +95°C
Document No. E1248E40 (Ver. 4.0)
Date Published April 2009 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2007-2009
EDJ1108BABG, EDJ1116BABG
Ordering Information
Die
revision
Organization
(words × bits)
Internal
banks
JEDEC speed bin
(CL-tRCD-tRP)
Part number
Package
EDJ1108BABG-GL-E
EDJ1108BABG-GN-E
EDJ1108BABG-DG-E
EDJ1108BABG-DJ-E
EDJ1108BABG-AC-E
EDJ1108BABG-AE-E
EDJ1108BABG-AG-E
EDJ1108BABG-8A-E
EDJ1108BABG-8C-E
EDJ1116BABG-DG-E
EDJ1116BABG-DJ-E
EDJ1116BABG-AC-E
EDJ1116BABG-AE-E
EDJ1116BABG-AG-E
EDJ1116BABG-8A-E
EDJ1116BABG-8C-E
DDR3-1600J (10-10-10)
DDR3-1600K (11-11-11)
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066E (6-6-6)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066E (6-6-6)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
A
128M × 8
64M × 16
8
78-ball FBGA
96-ball FBGA
Part Number
E D J 11 08 B A BG - GL - E
Elpida Memory
Environment code
E: Lead Free
(RoHS compliant)
Type
D: Monolithic Device
Speed
Product Family
J: DDR3
GL: DDR3-1600J (10-10-10)
GN: DDR3-1600K (11-11-11)
DG: DDR3-1333G (8-8-8)
DJ: DDR3-1333H (9-9-9)
AC: DDR3-1066E (6-6-6)
AE: DDR3-1066F (7-7-7)
AG: DDR3-1066G (8-8-8)
8A: DDR3-800D (5-5-5)
8C: DDR3-800E (6-6-6)
Density / Bank
11: 1Gb / 8-bank
Organization
08: x8
16: x16
Package
BG: FBGA
Power Supply, Interface
B: 1.5V, SSTL_15
Die Rev.
Data Sheet E1248E40 (Ver. 4.0)
2
EDJ1108BABG, EDJ1116BABG
Pin Configurations (×8 configuration)
/xxx indicates active low signal.
78-ball FBGA (×8 configuration)
1
2
3
7
8
9
A
B
VSS
VDD
NC
NU/(/TDQS) VSS
VDD
VSS VSSQ DQ0
VDDQ
DM/TDQS VSSQ VDDQ
C
D
DQ2 DQS
DQ1
VDD
DQ7
DQ3 VSSQ
VSSQ
VSSQ DQ6 /DQS
VSS
DQ5
E
F
G
H
J
DQ4
VREFDQ VDDQ
VDDQ
NC
NC
VSS /RAS
CK
/CK
VSS
ODT VDD /CAS
VDD CKE
A10(AP)
NC
/CS
/WE
ZQ
NC
VSS
VDD
VSS
VDD
VSS
BA0
A3
BA2
A0
NC VREFCA VSS
K
L
A12(/BC) BA1
VDD
VSS
VDD
VSS
A5
A2
A1
A11
NC
A4
A6
A8
M
N
A7
A9
/RESET A13
(Top view)
Pin name
Function
Address inputs
A10 (AP): Auto precharge
A12(/BC): Burst chop
Pin name
/RESET*3
Function
A0 to A13*3
Active low asynchronous reset
BA0 to BA2*3
DQ0 to DQ7
DQS, /DQS
TDQS, /TDQS
/CS*3
/RAS, /CAS, /WE*3
CKE*3
Bank select
VDD
Supply voltage for internal circuit
Ground for internal circuit
Supply voltage for DQ circuit
Ground for DQ circuit
Reference voltage for DQ
Reference voltage
Data input/output
Differential data strobe
Termination data strobe
Chip select
VSS
VDDQ
VSSQ
VREFDQ
VREFCA
ZQ
NC*1
NU*2
Command input
Clock enable
Reference pin for ZQ calibration
No connection
CK, /CK
Differential clock input
Write data mask
ODT control
DM
ODT*3
Not usable
Notes: 1. Not internally connected with die.
2. Don’t connect. Internally connected.
3. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
Data Sheet E1248E40 (Ver. 4.0)
3
EDJ1108BABG, EDJ1116BABG
Pin Configurations (×16 configuration)
/xxx indicates active low signal.
96-ball FBGA
3
1
2
7
8
9
A
VDDQ DQU5 DQU7
VSSQ VDD VSS
DQU4 VDDQ VSS
B
C
D
E
/DQSU DQU6 VSSQ
DQSU DQU2 VDDQ
DQU0 VSSQ VDD
VDDQ
DQU3 DQU1
VSSQ VDDQ DMU
VSS VSSQ DQL0
DML VSSQ VDDQ
DQL1 DQL3 VSSQ
F
G
H
J
VDDQ DQL2 DQSL
VSSQ DQL6 /DQSL
VREFDQ VDDQ DQL4
VDD
VSS VSSQ
DQL7 DQL5 VDDQ
NC
VSS /RAS
CK
VSS
VDD
NC
CKE
NC
K
L
/CK
ODT VDD /CAS
NC
/CS
/WE
BA2
A10(AP) ZQ
M
N
P
R
T
VSS
BA0
NC VREFCA VSS
VDD
VSS
VDD
A3
A5
A7
A0
A2
A9
A12(/BC) BA1
VDD
VSS
VDD
VSS
A1
A11
NC
A4
A6
A8
VSS /RESET NC
(Top view)
Pin name
Function
Address inputs
A10(AP): Auto precharge
A12(/BC): Burst chop
Pin name
/RESET*2
Function
A0 to A12*2
Active low asynchronous reset
BA0 to BA2
DQU0 to DQU7
DQL0 to DQL7
Bank select
VDD
VSS
Supply voltage for internal circuit
Ground for internal circuit
Data input/output
DQSU, /DQSU
Differential data strobe
VDDQ
Supply voltage for DQ circuit
DQSL, /DQSL
/CS*2
/RAS, /CAS, /WE*2
CKE*2
Chip select
VSSQ
VREFDQ
VREFCA
ZQ
Ground for DQ circuit
Reference voltage for DQ
Reference voltage
Command input
Clock enable
CK, /CK
Differential clock input
Write data mask
ODT control
Reference pin for ZQ calibration
No connection
DMU, DML
ODT*2
NC*
Note: 1. Not internally connected with die.
2. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
Data Sheet E1248E40 (Ver. 4.0)
4
EDJ1108BABG, EDJ1116BABG
CONTENTS
Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Pin Configurations (×8 configuration)............................................................................................................3
Pin Configurations (×16 configuration)..........................................................................................................4
Electrical Conditions......................................................................................................................................7
Absolute Maximum Ratings .......................................................................................................................... 7
Operating Temperature Condition ................................................................................................................ 7
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)................... 8
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)....................... 8
VREF Tolerances ......................................................................................................................................... 9
Input Slew Rate Derating............................................................................................................................ 10
AC and DC Logic Input Levels for Differential Signals................................................................................ 16
Single-Ended Requirements for Differential Signals................................................................................... 18
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V).................. 21
AC Overshoot/Undershoot Specification..................................................................................................... 23
Output Driver Impedance............................................................................................................................ 24
On-Die Termination (ODT) Levels and I-V Characteristics ......................................................................... 26
ODT Timing Definitions............................................................................................................................... 28
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)................................... 32
Electrical Specifications...............................................................................................................................43
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................................. 43
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................................. 44
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V)..................................................................... 45
Standard Speed Bins.................................................................................................................................. 46
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)....................... 50
Block Diagram .............................................................................................................................................63
Pin Function.................................................................................................................................................64
Command Operation ...................................................................................................................................66
Command Truth Table................................................................................................................................ 66
CKE Truth Table......................................................................................................................................... 70
Simplified State Diagram.............................................................................................................................71
RESET and Initialization Procedure............................................................................................................72
Power-Up and Initialization Sequence........................................................................................................ 72
Reset and Initialization with Stable Power .................................................................................................. 73
Programming the Mode Register.................................................................................................................74
Mode Register Set Command Cycle Time (tMRD) ..................................................................................... 74
MRS Command to Non-MRS Command Delay (tMOD) ............................................................................. 74
Data Sheet E1248E40 (Ver. 4.0)
5
EDJ1108BABG, EDJ1116BABG
DDR3 SDRAM Mode Register 0 [MR0] ...................................................................................................... 75
DDR3 SDRAM Mode Register 1 [MR1] ...................................................................................................... 76
DDR3 SDRAM Mode Register 2 [MR2] ...................................................................................................... 77
DDR3 SDRAM Mode Register 3 [MR3] ...................................................................................................... 78
Burst Length (MR0) .................................................................................................................................... 79
Burst Type (MR0) ....................................................................................................................................... 79
DLL Enable (MR1)...................................................................................................................................... 80
DLL-off Mode.............................................................................................................................................. 80
DLL on/off switching procedure .................................................................................................................. 81
Additive Latency (MR1)............................................................................................................................... 83
Write Leveling (MR1) .................................................................................................................................. 84
TDQS, /TDQS function (MR1) .................................................................................................................... 87
Extended Temperature Usage (MR2)......................................................................................................... 88
Multi Purpose Register (MR3)..................................................................................................................... 90
Operation of the DDR3 SDRAM..................................................................................................................98
Read Timing Definition................................................................................................................................ 98
Read Operation ........................................................................................................................................ 102
Write Timing Definition.............................................................................................................................. 109
Write Operation......................................................................................................................................... 110
Write Timing Violations ............................................................................................................................. 116
Write Data Mask ....................................................................................................................................... 117
Precharge ................................................................................................................................................. 118
Auto Precharge Operation ........................................................................................................................ 119
Auto-Refresh............................................................................................................................................. 120
Self-Refresh.............................................................................................................................................. 121
Power-Down Mode ................................................................................................................................... 122
Input Clock Frequency Change during Precharge Power-Down............................................................... 129
On-Die Termination (ODT)........................................................................................................................ 130
ZQ Calibration........................................................................................................................................... 142
Package Drawing ......................................................................................................................................144
Recommended Soldering Conditions........................................................................................................146
Data Sheet E1248E40 (Ver. 4.0)
6
EDJ1108BABG, EDJ1116BABG
Electrical Conditions
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
VDD
Rating
Unit
V
Notes
1, 3
1, 3
1
Power supply voltage
Power supply voltage for output
Input voltage
−0.4 to +1.975
−0.4 to +1.975
−0.4 to +1.975
−0.4 to +1.975
−0.4 to 0.6 × VDD
−0.4 to 0.6 × VDDQ
−55 to +100
1.0
VDDQ
VIN
V
V
Output voltage
VOUT
VREFCA
VREFDQ
Tstg
V
1
Reference voltage
Reference voltage for DQ
Storage temperature
Power dissipation
V
3
V
3
°C
W
mA
1, 2
1
PD
Short circuit output current
IOUT
50
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than
0.6 × VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
TC
Rating
Unit
Notes
1, 2, 3
Operating case temperature
0 to +95
°C
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be
supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C
under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C
and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional
conditions apply:
a)
Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to
3.9µs. (This double refresh requirement may not apply for some devices.)
b)
If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to
either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit
[A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).
Data Sheet E1248E40 (Ver. 4.0)
7
EDJ1108BABG, EDJ1116BABG
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
VDD
min.
typ.
max.
Unit
V
Notes
1, 2
Supply voltage
1.425
1.425
1.5
1.575
Supply voltage for DQ
Input reference voltage
VDDQ
1.5
1.575
V
1, 2
VREFCA (DC) 0.49 × VDD
0.50 × VDD
0.51 × VDD
V
3, 4
Input reference voltage for DQ VREFDQ (DC) 0.49 × VDDQ
0.50 × VDDQ 0.51 × VDDQ
V
3, 4
Notes: 1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD (for
reference: approx ±15 mV).
4. For reference: approx. VDD/2 ± 15 mV.
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Single-Ended AC and DC Input Levels for Command and Address
Parameter
Symbol
min.
typ.
max.
Unit
V
Notes
DC input logic high
DC input logic low
AC input logic high
AC input logic low
AC input logic high
AC input logic low
VIHCA (DC)
VILCA (DC)
VIHCA (AC)
VILCA (AC)
VREF + 0.100
VSS
VDD
1
1
VREF − 0.100
V
2
1
1
VREF + 0.175
*
V
2
*
VREF − 0.175
V
2
VIHCA (AC150) VREF + 0.150
*
V
1
1
2
VILCA (AC150)
*
VREF − 0.150
V
Notes: 1. For input only pins except /RESET; VREF = VREFCA.
2. See Overshoot and Undershoot Specifications section.
Single-Ended AC and DC Input Levels for DQ and DM
Parameter
Symbol
min.
typ.
max.
Unit
V
Notes
DC input logic high
DC input logic low
VIHDQ (DC)
VILDQ (DC)
VREF + 0.100
VSS
VDD
1
1
VREF − 0.100
V
AC input logic high
DDR3-800, 1066
DDR3-1333, 1600
AC input logic low
DDR3-800, 1066
DDR3-1333, 1600
2
VIHDQ (AC)
VIHDQ (AC)
VILDQ (AC)
VILDQ (AC)
VREF + 0.175
VREF + 0.150
*
V
V
V
V
1, 3
1, 3
1, 3
1, 3
2
*
2
*
VREF − 0.175
VREF − 0.150
2
*
Notes: 1. For DQ and DM: VREF = VREFDQ.
2. See Overshoot and Undershoot Specifications section.
3. Single-ended swing requirement for DQS, /DQS is 350 mV (peak to peak). Differential swing requirement
for DQS, /DQS is 700 mV (peak to peak).
Data Sheet E1248E40 (Ver. 4.0)
8
EDJ1108BABG, EDJ1116BABG
VREF Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages VREFCA and VREFDQ are shown in Figure
VREF(DC) Tolerance and VREF AC-Noise Limits. It shows a valid reference voltage VREF(t) as a function of time.
(VREF stands for VREFCA and VREFDQ likewise).
VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to meet the
min/max requirements in the table of(Single-Ended AC and DC Input Levels for Command and Address).
Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than +/- 1% VDD.
VREF(DC) Tolerance and VREF AC-Noise Limits
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent
on VREF.
VREF shall be understood as VREF(DC), as defined in figure above, VREF(DC) Tolerance and VREF AC-Noise
Limits.
This clarifies that DC-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or
low level and therefore the time to which setup and hold is measured. System timing and voltage budgets need to
account for VREF(DC) deviations from the optimum position within the data-eye of the input signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage
associated with VREF AC-noise. Timing and voltage effects due to ac-noise on VREF up to the specified limit (±1%
of VDD) are included in DRAM timings and their associated deratings.
Data Sheet E1248E40 (Ver. 4.0)
9
EDJ1108BABG, EDJ1116BABG
Input Slew Rate Derating
For all input signals the total tIS, tDS (setup time) and tIH, tDH (hold time) required is calculated by adding the data
sheet tIS (base), tDS (base) and tIH (base), tDH (base) value to the ∆tIS, ∆tDS and ∆tIH, ∆tDH derating value
respectively.
Example: tDS (total setup time) = tDS (base) + ∆tDS.
Setup (tIS, tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF
(DC) and the first crossing of VIH (AC) min. Setup (tIS, tDS) nominal slew rate for a falling signal is defined as the
slew rate between the last crossing of VREF (DC) and the first crossing of VIL (AC) max. If the actual signal is
always earlier than the nominal slew rate line between shaded ‘VREF (DC) to AC region’, use nominal slew rate for
derating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF (DC) to AC region’, the
slew rate of a tangent line to the actual signal from the AC level to DC level is used for derating value (see the figure
of Slew Rate Definition Tangent).
Hold (tIH, tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of
VIL (DC) max. and the first crossing of VREF (DC). Hold (tIH, tDH) nominal slew rate for a falling signal is defined
as the slew rate between the last crossing of VIH (DC) min. and the first crossing of VREF (DC). If the actual signal
is always later than the nominal slew rate line between shaded ‘DC level to VREF (DC) region’, use nominal slew
rate for derating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘DC to VREF (DC) region’,
the slew rate of a tangent line to the actual signal from the DC level to VREF (DC) level is used for derating value
(see the figure of Slew Rate Definition Tangent).
For a valid transition the input signal has to remain above/below VIH/VIL(AC) for some time tVAC (see the table of
Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition).
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached
VIH/IL (AC) at the time of the rising clock transition) a valid input signal is still required to complete the transition and
reach VIH/IL (AC).
For slew rates in between the values listed in the tables below, the derating values may obtained by linear
interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
[Address/Command Setup and Hold Base-Values for 1V/ns]
DDR3-800
200
DDR3-1066
125
DDR3-1333
65
DDR3-1600
45
Unit
ps
Reference
tIS(base)
VIH/VIL(AC)
VIH/VIL(DC)
VIH/VIL(AC)
tIH(base)
275
200
140
120
ps
tIS(base) AC150
200 + 150
125 + 150
65 + 125
45 + 125
ps
Notes: 1 AC/DC referenced for 1V/ns Address/Command slew rate and 2V/ns differential CK, /CK slew rate.
2. The tHS (base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional
100ps of derating to accommodate for the lower alternate threshold of 150mV and another 25ps to
account for the earlier reference point [(175mv − 150mv)/1V/ns]
Data Sheet E1248E40 (Ver. 4.0)
10
EDJ1108BABG, EDJ1116BABG
[Derating Values of tIS/tIH AC/DC Based (DDR3-800, 1066, 1333, 1600)]
∆tIS, ∆tIH derating in [ps] AC/DC based
AC175 Threshold -> VIH(AC)=VREF(DC)+175mV, VIL(AC)=VREF(DC)-175mV
CK, /CK differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH Unit
2.0 +88 +50 +88 +50 +88 +50 +96 +58 +104 +66 +112 +74 +120 +84 +128 +100 ps
1.5 +59 +34 +59 +34 +59 +34 +67 +42 +75 +50 +83 +58 +91 +68 +99 +84 ps
1.0
0
0
0
0
0
0
+8
+6
+8
+4
−2
−8
+16 +16 +24 +24 +32 +34 +40 +50 ps
+14 +12 +22 +20 +30 +30 +38 +46 ps
CMD,
ADD
slew
0.9 −2
0.8 −6
−4
−2
−4
−2
−4
−10 −6
−10 −6
−10 +2
+10 +6
+18 +14 +26 +24 +34 +40 ps
+13 +8 +21 +18 +29 +34 ps
−10 +7 −2 +15 +8 +23 +24 ps
−6 +5 +10 ps
0.4 −62 −60 −62 −60 −62 −60 −54 −52 −46 −44 −38 −36 −30 −26 −22 −10 ps
rate
0.7 −11 −16 −11 −16 −11 −16 −3
0.6 −17 −26 −17 −26 −17 −26 −9
+5
0
(V/ns)
−18 −1
0.5 −35 −40 −35 −40 −35 −40 −27 −32 −19 −24 −11 −16 −2
[Derating Values of tIS/tIH AC/DC based-Alternate AC150 Threshold (DDR3-800, 1066, 1333, 1600)]
∆tIS, ∆tIH derating in [ps] AC/DC based
Alternate AC150 Threshold -> VIH(AC)=VREF(DC)+150mV, VIL(AC)=VREF(DC)-150mV
CK, /CK differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH Unit
2.0 +75 +50 +75 +50 +75 +50 +83 +58 +91 +66 +99 +74 +107 +84 +115 +100 ps
1.5 +50 +34 +50 +34 +50 +34 +58 +42 +66 +50 +74 +58 +82 +68 +90 +84 ps
1.0
0.9
0.8
0.7
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
+8
+8
+8
+4
−2
−8
+16 +16 +24 +24 +32 +34 +40 +50 ps
+16 +12 +24 +20 +32 +30 +40 +46 ps
CMD,
ADD
slew
−4
−4
−4
−10
−16
−10
−16
−10 +8
−16 +8
−26 +7
+16 +6
+16
+24 +14 +32 +24 +40 +40 ps
+24 +8 +32 +18 +40 +34 ps
rate
0
(V/ns)
0.6 −1
−26 −1
−26 −1
−18 +15 −10 +23 −2
−32 +6 −24 +14 −16 +22 −6
0.4 −25 −60 −25 −60 −25 −60 −17 −52 −9 −44 −1 −36
+31 +8
+39 +24 ps
+30 +10 ps
0.5 −10 −40 −10 −40 −10 −40 −2
7
−26 15
−10 ps
[Required time tVAC above VIH(AC) {below VIL(AC)} for Valid Transition]
tVAC @ 175 mV[ps]
tVAC @ 150 mV[ps]
Slew rate (V/ns)
min.
75
57
50
38
34
29
22
13
0
max.
min.
175
170
167
163
162
161
159
155
150
150
max.
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
<0.5
0
Data Sheet E1248E40 (Ver. 4.0)
11
EDJ1108BABG, EDJ1116BABG
[Data Setup and Hold Base-Values]
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Unit
ps
Reference
tDS(base)
tDH(base)
75
25
30
65
10
45
VIH/VIL(AC)
VIH/VIL(DC)
150
100
ps
Notes: 1 AC/DC referenced for 1V/ns DQ slew rate and 2V/ns DQS slew rate.
[Derating Values of tDS/tDH AC/DC based (DDR3-800, 1066)]
∆tDS, ∆tDH derating in [ps] AC/DC based
DQS, /DQS differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH Unit
2.0 +88 +50 +88 +50 +88 +50
ps
1.5 +59 +34 +59 +34 +59 +34 +67 +42
ps
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0
0
0
0
0
0
+8
+6
+8
+4
−2
−8
+16 +16
ps
DQ
−2
−4
−2
−6
−4
+14 +12 +22 +20
ps
ps
slew
rate
−10 +2
−3
+10 +6
+18 +14 +26 +24
(V/ns)
+5
0
+13 +8
−10 +7 −2
−11 −16 −2
−30 −26 −22 −10 ps
+21 +18 +29 +34 ps
−1
+15 +8
−6
+23 +24 ps
+5 +10 ps
[Derating Values of tDS/tDH AC/DC based (DDR3-1333, 1600)]
∆tDS, ∆tDH derating in [ps] AC/DC based
DQS, /DQS differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH Unit
2.0 +75 +50 +75 +50 +75 +50
ps
1.5 +59 +34 +59 +34 +59 +34 +58 +42
ps
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0
0
0
0
0
0
0
0
+8
+8
+8
+4
−2
−8
+16 +16
ps
DQ
−4
−4
+16 +12 +24 +20
ps
ps
slew
rate
−10 +8
+16 +6
+16
+15 −10 +23 −2
+14 −16 +22 −6
+7
+24 +14 +32 +24
(V/ns)
+8
0
+24 +8
+32 +18 +40 +34 ps
+31 +8
+39 +24 ps
+30 +10 ps
−26 +15 −10 ps
Data Sheet E1248E40 (Ver. 4.0)
12
EDJ1108BABG, EDJ1116BABG
[Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition]
DDR3-800, 1066
DDR3-1333, 1600
tVAC [ps]
tVAC [ps]
min.
175
Slew rate (V/ns)
min.
75
57
50
38
34
29
22
13
0
max.
max.
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
<0.5
170
167
163
162
161
159
155
150
0
150
Data Sheet E1248E40 (Ver. 4.0)
13
EDJ1108BABG, EDJ1116BABG
CK
/CK
tIS
tIH
tIS
tIH
VDD
tVAC
VIH (AC) min.
VIH (DC) min.
VREF (DC)
VREF to AC
region
DC to VREF
region
nominal
slew rate
nominal
slew rate
DC to VREF
region
VIL (DC) max.
VREF to AC
region
VIL (AC) max.
VSS
tVAC
∆TFS
∆TRH ∆TRS
∆TFH
Slew Rate Definition Nominal (CK, /CK)
/DQS
DQS
tDS
tDH
tDS
tDH
VDD
tVAC
VIH (AC) min.
VIH (DC) min.
VREF (DC)
VREF to AC
region
DC to VREF
region
nominal
slew rate
nominal
slew rate
DC to VREF
region
VIL (DC) max.
VREF to AC
region
VIL (AC) max.
VSS
tVAC
∆TFS
∆TRH ∆TRS
∆TFH
Slew Rate Definition Nominal (DQS, /DQS)
VREF (DC)
-
VIL (AC) max.
VIH (AC) min.
-
VREF (DC)
Setup slew rate
Falling signal
Setup slew rate
Rising signal
=
=
=
=
∆
TFS
∆TRS
VREF (DC)
-
VIL (DC) max.
VIH (DC) min.
-
VREF (DC)
Hold slew rate
Rising signal
Hold slew rate
Falling signal
∆
TRH
∆
TFH
Data Sheet E1248E40 (Ver. 4.0)
14
EDJ1108BABG, EDJ1116BABG
CK
/CK
tIS
tIH
tIS
tIH
VDD
tVAC
VIH (AC) min.
VIH (DC) min.
VREF (DC)
VREF to AC
region
nominal
line
nominal
line
DC to VREF
region
tangent
line
tangent
line
DC to VREF
region
nominal
line
VIL (DC) max.
VREF to AC
region
nominal
line
VIL (AC) max.
VSS
tVAC
∆TFS
∆TRH
∆TRS
∆TFH
Slew Rate Definition Tangent (CK, /CK)
/DQS
DQS
tDS
tDH
tDS
tDH
VDD
tVAC
VIH (AC) min.
VIH (DC) min.
VREF (DC)
VREF to AC
region
nominal
line
nominal
line
DC to VREF
region
tangent
line
tangent
line
DC to VREF
region
nominal
line
VIL (DC) max.
VREF to AC
region
nominal
line
VIL (AC) max.
VSS
tVAC
∆TFS
∆TRH
∆TRS
∆TFH
Slew Rate Definition Tangent (DQS, /DQS)
tangent line [VREF (DC)
-
-
VIL (AC) max.]
VIL (DC) max.]
tangent line [VIH (AC) min.
-
-
VREF (DC)]
VREF (DC)]
Setup slew rate
Falling signal
Setup slew rate
Rising signal
=
=
=
=
∆
TFS
∆TRS
tangent line [VREF (DC)
TRH
tangent line [VIH (DC) min.
TFH
Hold slew rate
Rising signal
Hold slew rate
Falling signal
∆
∆
Data Sheet E1248E40 (Ver. 4.0)
15
EDJ1108BABG, EDJ1116BABG
AC and DC Logic Input Levels for Differential Signals
Differential signal definition
Definition of Differential AC-swing and “time above AC-level” tDVAC
[Differential AC and DC Input Levels]
Parameter
Symbol
VIHdiff
VILdiff
min.
typ.
max.
Unit
V
Notes
3
Differential input logic high
Differential input logic low
Differential input logic AC
Differential input logic AC
+0.200
*
1
1
2
2
3
*
–0.200
V
3
VIHdiff (AC) 2 × (VIH (AC) − VREF)
*
V
3
VILdiff (AC)
*
2 × (VREF − VIL(AC))
V
Notes: 1 Used to define a differential signal slew-rate.
2. For CK, /CK use VIH/VIL(AC) of address/command and VREFCA; for strobes (DQS, /DQS, DQSL,
/DQSL, DQSU, /DQSU) use VIH/VIL(AC) of DQs and VREFDQ; if a reduced ac-high or ac-low level is
used for a signal group, then the reduced level applies also here.
3
These values are not defined, however the single ended components of differential signal CK, /CK, DQS,
/DQS, DQSL, /DQSL, DQSU, /DQSU need to be within the respective limits (VIH(DC) max, VIL(DC)min)
for single-ended signals as well as the limitations for overshoot and undershoot. Refer to Overshoot and
Undershoot specifications.
Data Sheet E1248E40 (Ver. 4.0)
16
EDJ1108BABG, EDJ1116BABG
[Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition]
@[VIH/Ldiff (AC)] = 350 mV
tDVAC [ps]
@[VIH/Ldiff (AC)] = 300 mV
tDVAC [ps]
Slew rate (V/ns)
min.
75
57
50
38
34
29
22
13
0
max.
min.
175
170
167
163
162
161
159
155
150
150
max.
>4.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
<1.0
0
Data Sheet E1248E40 (Ver. 4.0)
17
EDJ1108BABG, EDJ1116BABG
Single-Ended Requirements for Differential Signals
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, /CK, /DQS, /DQSL or /DQSU) has also
to comply with certain requirements for single-ended signals.
CK and /CK have to approximately reach VSEH min. / VSEL max. (approximately equal to the AC-levels (VIH(AC) /
VIL(AC)) for Address/command signals) in every half-cycle.
DQS, DQSL, DQSU, /DQS, /DQSL have to reach VSEH min./VSEL max. (approximately the AC-levels (VIH(AC) /
VIL(AC)) for DQ signals) in every half-cycle preceding and following a valid transition.
Note that the applicable ac-levels for Address/command and DQ’s might be different per speed-bin etc. E.g. if VIH
150 (AC)/VIL 150 (AC) is used for Address/command signals, then these ac-levels apply also for the single ended
components of differential CK and /CK.
Single-Ended Requirement for Differential Signals.
Note that while Address/command and DQ signal requirements are with respect to VREF, the single-ended
components of differential signals have a requirement with respect to VDD / 2; this is nominally the same. The
transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended components
of differential signals the requirement to reach VSEL max, VSEH min has no bearing on timing, but adds a restriction
on the common mode characteristics of these signals.
Data Sheet E1248E40 (Ver. 4.0)
18
EDJ1108BABG, EDJ1116BABG
[Single-ended levels for CK, DQS, DQSL, DQSU, /CK, /DQS, /DQSL or /DQSU]
Parameter
Symbol
min.
typ.
max.
Unit
V
Notes
1, 2
3
Single-ended high level for strobes
Single-ended high level for CK, /CK
Single-ended low level for strobes
Single-ended low level for CK, /CK
(VDD/2) + 0.175
(VDD/2) + 0.175
*
VSEH
3
*
V
1, 2
3
*
(VDD/2) − 0.175
(VDD/2) − 0.175
V
1, 2
VSEL
3
*
V
1, 2
Notes: 1. For CK, /CK use VIH/VIL(AC) of ADD/CMD; for strobes (DQS, /DQS, DQSL, /DQSL, DQSU, /DQSU) use
VIH/VIL(AC) of DQs.
2. VIH(AC)/VIL(AC) for DQs is based on VREFDQ; VIH(AC)/VIL(AC) for address/command is based on
VREFCA; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies
also here.
3
These values are not defined, however the single ended components of differential signals CK, /CK, DQS,
/DQS, DQSL, /DQSL, DQSU, /DQSU need to be within the respective limits (VIH(DC) max, VIL(DC)min)
for single-ended signals as well as the limitations for overshoot and undershoot. Refer to Overshoot and
Undershoot specifications.
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each
cross point voltage of differential input signals (CK, /CK and DQS, /DQS) must meet the requirements in table above.
The differential input cross point voltage VIX is measured from the actual cross point of true and complement signal
to the midlevel between of VDD and VSS.
VDD
CK, DQS
VIX
VDD/2
VIX
VIX
/CK, /DQS
VSS
VIX Definition
[Cross point voltage for differential input signals (CK, DQS)]
Parameter
Symbol
pins
min.
max.
150
Unit
mV
Note
1
Differential input cross point voltage
relative to VDD/2
VIX
CK, /CK
−150
−175
175
150
mV
mV
VIX
DQS, /DQS −150
Note: 1. Extended range for VIX is only allowed for clock and if CK and /CK are monotonic, have a single-ended
swing VSEL/VSEH of at least VDD/2 +/-250 mV, and the differential slew rate of CK - /CK is larger than 3
V/ ns. Refer to the table of Cross point voltage for differential input signals (CK, DQS) for VSEL and VSEH
standard values.
Data Sheet E1248E40 (Ver. 4.0)
19
EDJ1108BABG, EDJ1116BABG
[Differential Input Slew Rate Definition]
Measured
Description
From
To
Defined by
Applicable for
Note
Differential input slew rate for
rising edge
(CK - /CK and DQS - /DQS)
VIHdiff (min.) – VILdiff (max.)
VILdiff (max.)
VIHdiff (min.)
∆TRdiff
Differential input slew rate for
VIHdiff (min.). – VILdiff max.
falling edge
VIHdiff (min.)
VILdiff (max.)
∆TFdiff
(CK - /CK and DQS - /DQS)
Note: The differential signal (i.e. CK, /CK and DQS, /DQS) must be linear between these thresholds.
VIHdiff(min.)
0
VILdiff (max.)
∆TRdiff
∆TFdiff
VIHdiff (min.)
−
VILdiff (max.)
VIHdiff (min.)
−
VILdiff (max.)
Falling slew =
Rising slew =
∆TFdiff
∆TRdiff
Differential Input Slew Rate Definition for DQS, /DQS and CK, /CK
Data Sheet E1248E40 (Ver. 4.0)
20
EDJ1108BABG, EDJ1116BABG
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Specification
Unit
V
Notes
DC output high measurement level
(for IV curve linearity)
VOH (DC)
0.8 × VDDQ
DC output middle measurement level
V
V
VOM (DC)
VOL (DC)
VOH (AC)
VOL (AC)
VOHdiff
0.5 × VDDQ
(for IV curve linearity)
DC output low measurement level
(for IV curve linearity)
AC output high measurement level
(for output slew rate)
AC output low measurement level
(for output slew rate)
AC differential output high measurement
level (for output slew rate)
0.2 × VDDQ
VTT + 0.1 × VDDQ
VTT − 0.1 × VDDQ
0.2 × VDDQ
V
V
V
1
1
2
2
AC differential output low measurement
level (for output slew rate)
AC differential cross point voltage
VOLdiff
−0.2 × VDDQ
V
V
VOX (AC)
TBD
Notes: 1. The swing of ±0.1 × VDDQ is based on approximately 50% of the static single-ended output high or low
swing with a driver impedance of 34Ω and an effective test load of 25Ω to VTT = VDDQ/2 at each of the
differential outputs.
2. The swing of ±0.2 × VDDQ is based on approximately 50% of the static single-ended output high or low
swing with a driver impedance of 34Ω and an effective test load of 25Ω to VTT = VDDQ/2 at each of the
differential outputs.
Output Slew Rate Definitions
[Single-Ended Output Slew Rate Definition]
Measured
Description
From
To
Defined by
VOH (AC) – VOL (AC)
∆TRse
Output slew rate for rising edge VOL (AC)
Output slew rate for falling edge VOH (AC)
VOH (AC)
VOH (AC) – VOL (AC)
VOL (AC)
∆TFse
VOH (AC)
VTT
VOL (AC)
∆TRse
∆TFse
VOH (AC)
−
VOL (AC)
VOH (AC)
−
VOL (AC)
Falling slew =
Rising slew =
∆TFse
∆TRse
Input Slew Rate Definition for Single-Ended Signals
Data Sheet E1248E40 (Ver. 4.0)
21
EDJ1108BABG, EDJ1116BABG
[Differential Output Slew Rate Definition]
Measured
Description
From
To
Defined by
VOHdiff(AC) – VOLdiff (AC)
∆TRdiff
Differential output slew rate for
rising edge
VOLdiff (AC)
VOHdiff (AC)
VOHdiff (AC) – VOLdiff (AC)
Differential output slew rate for
falling edge
VOHdiff (AC)
VOLdiff (AC)
∆TFdiff
VOHdiff (AC)
0
VOLdiff (AC)
∆TRdiff
∆TFdiff
VOHdiff (AC)
−
VOLdiff (AC)
VOHdiff (AC)
−
VOLdiff (AC)
Falling slew =
Rising slew =
∆TFdiff
∆TRdiff
Differential Input Slew Rate Definition for DQS, /DQS and CK, /CK
Output Slew Rate (RON = RZQ/7 setting)
Parameter
Symbol
SRQse
Speed
min.
2.5
max.
5
Unit
Notes
1
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Output slew rate
(Single-ended)
V/ns
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Output slew rate
(Differential)
SRQdiff
5
12
V/ns
1
Remark: SR = slew rate. se = single-ended signals. diff = differential signals. Q = Query output
Note: 1.In two cases, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.
(a) is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from
high to low or low to high) while all remaining DQ signals in the same byte lane are static (i.e. they stay at
either high or low).
(b) is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from
high to low or low to high) while all remaining DQ signals in the same byte lane are switching into the
opposite direction (i.e. from low to high or high to low respectively). For the remaining DQ signal switching
into the opposite direction, the regular maximum limit of 5V/ns applies.
Reference Load for AC Timing and Output Slew Rate
VDDQ
DUT
DQ
DQS,
/DQS
CK, /CK
VTT = VSSQ/2
RT =25Ω
Reference Output Load
Data Sheet E1248E40 (Ver. 4.0)
22
EDJ1108BABG, EDJ1116BABG
AC Overshoot/Undershoot Specification
Parameter
Pins
Specification
Command, Address,
CKE, ODT
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
0.4V
0.4V
Maximum overshoot area above VDD
DDR3-1600
0.33V-ns
DDR3-1333
DDR3-1066
DDR3-800
0.4V-ns
0.5V-ns
0.67V-ns
Maximum undershoot area below VSS
DDR3-1600
0.33V-ns
DDR3-1333
0.4V-ns
0.5V-ns
0.67V-ns
0.4V
DDR3-1066
DDR3-800
Maximum peak amplitude allowed for overshoot
CK, /CK
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDD
DDR3-1600
0.13V-ns
DDR3-1333
DDR3-1066
DDR3-800
0.15V-ns
0.19V-ns
0.25V-ns
Maximum undershoot area below VSS
DDR3-1600
0.13V-ns
DDR3-1333
0.15V-ns
0.19V-ns
0.25V-ns
0.4V
DDR3-1066
DDR3-800
Maximum peak amplitude allowed for overshoot
DQ, DQS, /DQS, DM
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDDQ
DDR3-1600
0.13V-ns
DDR3-1333
DDR3-1066
DDR3-800
0.15V-ns
0.19V-ns
0.25V-ns
Maximum undershoot area below VSSQ
DDR3-1600
0.13V-ns
DDR3-1333
DDR3-1066
DDR3-800
0.15V-ns
0.19V-ns
0.25V-ns
Maximum amplitude
Overshoot area
VDD, VDDQ
Volts (V)
VSS, VSSQ
Undershoot area
Time (ns)
Overshoot/Undershoot Definition
Data Sheet E1248E40 (Ver. 4.0)
23
EDJ1108BABG, EDJ1116BABG
Output Driver Impedance
RON will be achieved by the DDR3 SDRAM after proper I/O calibration. Tolerance and linearity requirements are
referred to the Output Driver DC Electrical Characteristics table.
A functional representation of the output buffer is shown in the figure Output Driver: Definition of Voltages and
Currents.
RON is defined by the value of the external reference resistor RZQ as follows:
• RON40 = RZQ/6
• RON34 = RZQ/7
The individual pull-up and pull-down resistors (RONPu and RONPd) are defined as follows:
Parameter
Symbol
RONPu
Definition
Conditions
VDDQ − VOUT
Output driver pull-up impedance
RONPd is turned off
IOUT
VOUT
IOUT
Output driver pull-down impedance
RONPd
RONPu is turned off
Chip in Drive Mode
Output Driver
VDDQ
IPu
To
other
circuitry
like
RCV,
...
RONPu
DQ
IOut
RONPd
IPd
VOut
VSSQ
Output Driver: Definition of Voltages and Currents
Data Sheet E1248E40 (Ver. 4.0)
24
EDJ1108BABG, EDJ1116BABG
Output Driver DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
RONnom Resistor
VOUT
min.
nom.
max.
Unit
Notes
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
0.6
0.9
0.9
0.9
0.9
0.6
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
1.1
1.1
1.4
1.4
1.1
1.1
40Ω
RON40Pd
RON40Pu
RON34Pd
RON34Pu
RZQ/6 1, 2, 3
RZQ/6 1, 2, 3
RZQ/7 1, 2, 3
RZQ/7 1, 2, 3
34Ω
Mismatch between pull-up and pull down, MMPuPd
VOM (DC) = 0.5 × VDDQ
−10
10
%
1, 2, 4
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 × VDDQ. Other
calibration schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 ×
VDDQ and 0.8 × VDDQ.
4. Measurement definition for mismatch between pull-up and pull-down, MMPuPd:
Measure RONPu and RONPd, both at 0.5 × VDDQ:
RONPu -RONPd
MMPuPd =
× 100
RONnom
Output Driver Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table Output Driver
Sensitivity Definition and Output Driver Voltage and Temperature Sensitivity.
∆T = T − T (@calibration); ∆V= VDDQ − VDDQ (@calibration); VDD = VDDQ
Note: dRONdT and dRONdV are not subject to production test but are verified by design and characterization.
[Output Driver Sensitivity Definition]
min
max
unit
RONPu@VOH (DC) 0.6 − dRONdTH × |∆T| − dRONdVH × |∆V|
1.1 + dRONdTH × |∆T| + dRONdVH × |∆V|
1.1 + dRONdTM × |∆T| + dRONdVM × |∆V|
1.1 + dRONdTL × |∆T| + dRONdVL × |∆V|
RZQ/7
RZQ/7
RZQ/7
RON@ VOM (DC)
RONPd@VOL (DC)
0.9 − dRONdTM × |∆T| − dRONdVM × |∆V|
0.6 − dRONdTL × |∆T| − dRONdVL × |∆V|
[Output Driver Voltage and Temperature Sensitivity]
min.
0
max.
Unit
dRONdTM
dRONdVM
dRONdTL
dRONdVL
dRONdTH
dRONdVH
1.5
%/°C
%/mV
%/°C
%/mV
%/°C
%/mV
0
0.15
1.5
0
0
TBD
1.5
0
0
TBD
Data Sheet E1248E40 (Ver. 4.0)
25
EDJ1108BABG, EDJ1116BABG
On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of the MR1 Register.
ODT is applied to the DQ, DM, DQS, /DQS and TDQS, /TDQS (×8 devices only) pins.
A functional representation of the on-die termination is shown in the figure On-Die Termination: Definition of Voltages
and Currents.
The individual pull-up and pull-down resistors (RTTPu and RTTPd) are defined as follows:
Parameter
Symbol
RTTPu
Definition
Conditions
VDDQ − VOUT
IOUT
ODT pull-up resistance
RTTPd is turned off
VOUT
IOUT
ODT pull-down resistance
RTTPd
RTTPu is turned off
Chip in Termination Mode
ODT
VDDQ
IPu
IOut = IPd - IPu
To
other
RTTPu
circuitry
like
RCV,
...
DQ
IOut
RTTPd
IPd
VOut
VSSQ
On-Die Termination: Definition of Voltages and Currents
The value of the termination resistor can be set via MRS command to RTT60 = RZQ/4 (nom) or RTT120 = RZQ/2
(nom).
RTT60 or RTT120 will be achieved by the DDR3 SDRAM after proper IO calibration has been performed.
Tolerances requirements are referred to the ODT DC Electrical Characteristics table.
Measurement Definition for RTT
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test and measure
current I(VIL(AC)) respectively.
VIH(AC) − VIL(AC)
RTT =
I(VIH(AC)) − I(VIL(AC))
Measurement Definition for ∆VM
Measure voltage (VM) at test pin (midpoint) with no load.
2× VM
∆VM =
-1 ×100
VDDQ
Data Sheet E1248E40 (Ver. 4.0)
26
EDJ1108BABG, EDJ1116BABG
ODT DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
MR1
[A9, A6, A2] RTT
Resistor
VOUT
min.
nom.
max.
Unit
Notes
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.1
1.1
1.4
[0, 1, 0]
120Ω RTT120Pd240
RZQ
1, 2, 3, 4
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.4
1.1
1.1
RTT120Pu240
RTT120
RZQ
1, 2, 3, 4
VIL (AC) to VIH (AC)
0.9
1.0
1.6
RZQ/2 1, 2, 5
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
[0, 0, 1]
[0, 1.1]
[1, 0, 1]
[1, 0, 0]
60Ω
40Ω
30Ω
20Ω
RTT60Pd120
RZQ/2 1, 2, 3, 4
RTT60Pu120
RTT60
RZQ/2 1, 2, 3, 4
RZQ/4 1, 2, 5
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
RTT40Pd80
RZQ/3 1, 2, 3, 4
RTT40Pu80
RTT40
RZQ/3 1, 2, 3, 4
RZQ/6 1, 2, 5
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
RTT30Pd60
RZQ/4 1, 2, 3, 4
RTT30Pu60
RTT30
RZQ/4 1, 2, 3, 4
RZQ/8 1, 2, 5
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
RTT20Pd40
RZQ/6 1, 2, 3, 4
RTT20Pu40
RTT20
RZQ/6 1, 2, 3, 4
RZQ/12 1, 2, 5
VIL (AC) to VIH (AC)
0.9
1.0
1.6
Deviation of VM w.r.t. VDDQ/2, ∆VM
−5
5
%
1, 2, 5, 6
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output resistors are recommended to be calibrated at 0.5 × VDDQ. Other calibration
schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 × VDDQ and 0.8
× VDDQ.
4. Not a specification requirement, but a design guide line.
5. Measurement Definition for RTT:
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test
and measure current I(VIL(AC)) respectively.
VIH(AC) − VIL(AC)
RTT =
I(VIH(AC)) − I(VIL(AC))
Data Sheet E1248E40 (Ver. 4.0)
27
EDJ1108BABG, EDJ1116BABG
6. Measurement Definition for VM and ∆VM:
Measure voltage (VM) at test pin (midpoint) with no load:
2× VM
∆VM =
-1 ×100
VDDQ
ODT Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table ODT
Sensitivity Definition and ODT Voltage and Temperature Sensitivity.
∆T = T − T (@calibration); ∆V= VDDQ − VDDQ (@calibration); VDD = VDDQ
Note: dRTTdT and dRTTdV are not subject to production test but are verified by design and characterization.
[ODT Sensitivity Definition]
min.
max.
Unit
RTT
0.9 − dRTTdT × |∆T| - dRTTdV × |∆V|
1.6 + dRTTdT×|∆T| + dRTTdV × |∆V|
RZQ/2, 4, 6, 8, 12
[ODT Voltage and Temperature Sensitivity]
min.
max.
1.5
Unit
dRTTdT
dRTTdV
0
0
%/°C
%/mV
0.15
ODT Timing Definitions
Test Load for ODT Timings
Different than for timing measurements, the reference load for ODT timings are defined in ODT Timing Reference
Load.
VDDQ
DUT
DQ
DQS,
/DQS
CK, /CK
VTT = VSSQ/2
RT =25Ω
ODT Timing Reference Load
Data Sheet E1248E40 (Ver. 4.0)
28
EDJ1108BABG, EDJ1116BABG
ODT Measurement Definitions
Definitions for tAON, tAONPD, tAOF, tAOFPD and tADC are provided in the following table and subsequent figures.
Symbol
Begin Point Definition
End Point Definition
Figure
Rising edge of CK - /CK defined by the end
point of ODTLon
tAON
Extrapolated point at VSSQ
Figure a)
Rising edge of CK - /CK with ODT being first
registered high
Rising edge of CK - /CK defined by the end
point of ODTLoff
tAONPD
tAOF
Extrapolated point at VSSQ
Figure b)
End point: Extrapolated point at VRTT_Nom Figure c)
Rising edge of CK - /CK with ODT being first
registered low
Rising edge of CK - /CK defined by the end
point of ODTLcnw, ODTLcwn4 or ODTLcwn8
tAOFPD
tADC
End point: Extrapolated point at VRTT_Nom Figure d)
End point: Extrapolated point at VRTT_WR
Figure e)
and VRTT_Nom respectively
Reference Settings for ODT Timing Measurements
Measurement reference settings are provided in the following Table.
Measured Parameter RTT_Nom Setting
RTT_WR Setting
VSW1 [V]
VSW2 [V]
0.10
Note
tAON
RZQ/4
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
RZQ/2
0.05
RZQ/12
RZQ/4
0.10
0.20
tAONPD
tAOF
0.05
0.10
RZQ/12
RZQ/4
0.10
0.20
0.05
0.10
RZQ/12
RZQ/4
0.10
0.20
tAOFPD
tADC
0.05
0.10
RZQ/12
RZQ/12
0.10
0.20
0.20
0.30
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLon
CK
VTT
/CK
tAON
tSW2
tSW1
DQ, DM
DQS, /DQS
VSW2
TDQS, /TDQS
VSW1
VSSQ
VSSQ
End point: Extrapolated point at VSSQ
a) Definition of tAON
Data Sheet E1248E40 (Ver. 4.0)
29
EDJ1108BABG, EDJ1116BABG
Begin point: Rising edge of CK - /CK with
ODT being first registered high
CK
VTT
/CK
tAONPD
tSW2
tSW1
DQ, DM
DQS, /DQS
VSW2
TDQS, /TDQS
VSW1
VSSQ
VSSQ
End point: Extrapolated point at VSSQ
b) Definition of tAONPD
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLoff
CK
VTT
/CK
tAOF
End point: Extrapolated point at VRTT_Nom
VRTT_Nom
VSW2
tSW2
tSW1
DQ, DM
DQS, /DQS
TDQS, /TDQS
VSW1
VSSQ
c) Definition of tAOF
Begin point: Rising edge of CK - /CK with
ODT being first registered low
CK
VTT
/CK
tAOFPD
End point: Extrapolated point at VRTT_Nom
VRTT_Nom
VSW2
tSW2
tSW1
DQ, DM
DQS, /DQS
TDQS, /TDQS
VSW1
VSSQ
d) Definition of tAOFPD
Data Sheet E1248E40 (Ver. 4.0)
30
EDJ1108BABG, EDJ1116BABG
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLcnw
Begin point: Rising edge of CK - /CK defined by
the end point of ODTLcwn4 or ODTLcwn8
CK
VTT
/CK
tADC
tADC
VRTT_Nom
TSW21
VRTT_Nom
End point:
Extrapolated
point at VRTT_Nom
DQ, DM
DQS, /DQS
TDQS, /TDQS
TSW22
VSW2
TSW11
VSW1
TSW12
VRTT_Wr
End point: Extrapolated point at VRTT_Wr
VSSQ
e) Definition of tADC
Data Sheet E1248E40 (Ver. 4.0)
31
EDJ1108BABG, EDJ1116BABG
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Within the tables about IDD measurement conditions, the following definitions are used:
• L: VIN ≤ VIL (AC)(max.)
• H: VIN ≥ VIH (AC)(min.);
• STABLE: inputs are stable at H or L level
• FLOATING: inputs are VREF = VDDQ / 2
• SWITCHING: Described in the following Definition of SWITCHING table.
• N/A: not available
[Definition of SWITCHING]
Signals
Definitions
If not otherwise mentioned the inputs are stable at H or L during 4 clocks and change then to the
opposite value
Address (row, column)
(e.g. Ax Ax Ax Ax /Ax /Ax /Ax /Ax Ax Ax Ax Ax .....
Please see each IDDx definition for details
If not otherwise mentioned the bank addresses should be switched like the row/column
addresses - please see each IDDx definition for details
Bank address
Define D = {/CS, /RAS, /CAS, /WE } := {H, L, L, L}
Define /D = {/CS, /RAS, /CAS, /WE } := {H, H, H, H}
Command
(/CS, /RAS, /CAS, /WE)
Define Command Background Pattern = D D /D /D D D /D /D D D /D /D ...
If other commands are necessary (e.g. ACT for IDD0 or Read for IDD4R) the Background Pattern
Command is substituted by the respective /CS, /RAS, /CAS, /WE levels of the necessary command.
See each IDDx definition for details and figures of Example of IDD1, IDD2N/IDD3N, IDD4R.
Data DQ is changing between H and L every other data transfer (once per clock) for DQ signals,
which means that data DQ is stable during one clock;
see each IDDx definition for exceptions from this rule and for further details.
See figures of Example of IDD1, IDD2N/IDD3N, IDD4R.
Data (DQ)
Data Masking (DM)
NO Switching; DM must be driven L all the time
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR3-1600
DDR3-1333
DDR3-1066
DDR3-800
5-5-5
5
Parameter
10-10-10 11-11-11 8-8-8
9-9-9
9
6-6-6
6
7-7-7
8-8-8
8
6-6-6
6
Unit
tCK
ns
CL (IDD)
10
11
8
7
tCK min.(IDD)
tRCD min. (IDD)
tRC min. (IDD)
tRAS min.(IDD)
tRP min. (IDD)
tFAW (IDD)-×8
tFAW (IDD)-×16
tRRD (IDD)-×8
tRRD (IDD)-×16
tRFC (IDD)
1.25
12.5
47.5
35
1.25
13.75
48.75
35
1.5
12
48
36
12
30
45
6.0
7.5
110
1.5
13.5
49.5
36
1.875
11.25
48.75
37.5
11.25
37.5
50
1.875
13.13
50.63
37.5
13.13
37.5
50
1.875
15
2.5
2.5
15
12.5
50
ns
52.50
37.5
15
52.5
37.5
15
ns
37.5
12.5
40
ns
12.5
30
13.75
30
13.5
30
ns
37.5
50
40
ns
45
50
50
ns
6.0
6.0
6.0
7.5
110
7.5
7.5
7.5
10
10
ns
10
10
10
10
10
ns
110
110
110
110
110
110
110
ns
Data Sheet E1248E40 (Ver. 4.0)
32
EDJ1108BABG, EDJ1116BABG
The following conditions apply:
• IDD specifications are tested after the device is properly initialized.
• Input slew rate is specified by AC Parametric test conditions.
• IDD parameters are specified with ODT and output buffer disabled (MR1 bit A12 = 1).
IDD Measurement Conditions for IDD0 and IDD1
Symbol
Name
IDD0
IDD1
Operating Current 1
-> One Bank Activate
-> Read
Operating Current 0
-> One Bank Activate
-> Precharge
-> Precharge
Measurement Condition
Timing Diagram Example
Figure IDD1 Example
CKE
H
H
External Clock
tCK
on
on
tCK min (IDD)
tRC min (IDD)
tRAS min (IDD)
N/A
tCK min (IDD)
tRC min (IDD)
tRAS min (IDD)
tRCD min (IDD)
N/A
tRC
tRAS
tRCD
tRRD
CL
N/A
N/A
CL(IDD)
AL
N/A
0
/CS
H between. Activate and Precharge Commands H between Activate, Read and Precharge
SWITCHING (see Definition of SWITCHING
table); only exceptions are Activate and
SWITCHING (see Definition of SWITCHING
table); only exceptions are Activate, Read and
Precharge commands; example of IDD0 pattern: Precharge commands; example of IDD1 pattern:
A0 D /D /D D D /D /D D D /D/D D D /D P0
A0 D /D /D D R0 /D /D D D /D/D D D /D P0
Command inputs
(/CS, /RAS, /CAS, /WE)
(DDR3-800: tRAS = 37.5ns between (A)ctivate (DDR3-800 -555: tRCD = 12.5ns between
and (P)recharge to bank 0;
(A)ctivate and (R)ead to bank 0;
Definition of D and /D: see Definition of
SWITCHING table
Definition of D and /D: see Definition of
SWITCHING table
Row addresses SWITCHING (see Definition of Row addresses SWITCHING (see Definition of
Row, column addresses
Bank addresses
SWITCHING table); A10 must be L all the time! SWITCHING table);A10 must be L all the time!
Bank address is fixed (bank 0)
Bank address is fixed (bank 0)
Read Data: output data switches every clock,
which means that Read data is stable during one
clock cycle.
To achieve IOUT = 0mA the output buffer should
be switched off by MR1 bit A12 set to “1”.
When there is no read data burst from DRAM the
DQ I/O should be FLOATING.
SWITCHING (see Definition of SWITCHING
table)
Data I/O
Output Buffer DQ, DQS
/ MR1 bit A12
off / 1
off / 1
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
ODT
/ MR1 bits [A9, A6, A2]
/ MR2 bits [A1, A0]
Burst length
Active banks
Idle banks
N/A
one
ACT-PRE loop
all other
8 fixed / MR0 bits [A1, A0] = {0,0}
one
ACT-READ-PRE loop
all other
Precharge Power-down
Mode / MR0 bit A12
N/A
N/A
Data Sheet E1248E40 (Ver. 4.0)
33
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12
T13
T14 T15 T16
T17
T18
CK
/CK
BA 0 to 2
0
Address
3FF
000
000
3FF
0 0 0
3FF
11
(A0 to A9)
Address
(A10)
L
Address
(A11 to A12)
11
00
00
00
0 0
/CS
/RAS
/CAS
/WE
Command
DQ
ACT
D
/D
/D
D
READ
/D
/D
D
D
/D
0
/D
1
D
0
D
/D
PRE
D
D
/D
/D
0
1
0
1
1
IDD1 measurement loop
DM
IDD1 Example* (DDR3-800-555, 512Mb ×8)
Note: Data DQ is shown but the output buffer should be switched off (per MR1 bit A12 = 1) to achieve IOUT = 0mA.
Address inputs are split into 3 parts.
Data Sheet E1248E40 (Ver. 4.0)
34
EDJ1108BABG, EDJ1116BABG
IDD Measurement Conditions for IDD2N, IDD2P (1), IDD2P (0) and IDD2Q
Symbol
IDD2N
IDD2P (1)*1
IDD2P (0)*1
IDD2Q
Precharge power-down Precharge power-down
current
current
Precharge standby
current
Precharge quiet
standby current
Name
(fast exit
(slow exit
MR0 bit A12= 0)
MR0 bit A12= 1)
Measurement Condition
Timing Diagram Example
Figure IDD2N/IDD3N
Example
CKE
H
L
L
H
External Clock
tCK
on
on
on
on
tCK min (IDD)
tCK min (IDD)
N/A
tCK min (IDD)
N/A
tCK min (IDD)
tRC
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
H
tRAS
tRCD
tRRD
CL
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
AL
N/A
N/A
/CS
H
STABLE
STABLE
Bank address,
row address and command
inputs
SWITCHING (see
Definition of SWITCHING STABLE
table)
STABLE
STABLE
Data inputs
Output buffer DQ, DQS
/ MR1 bit A12
SWITCHING
FLOATING
FLOATING
off / 1
FLOATING
off / 1
off / 1
off / 1
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
ODT
/ MR1 bits [A9, A6, A2]
/ MR2 bits [A1, A0]
Burst length
Active banks
Idle banks
N/A
none
all
N/A
none
all
N/A
none
all
N/A
none
all
Slow exit / 0
Fast exit / 1
Slow exit
Precharge Power-down
Mode / MR0 bit A12
N/A
N/A
(any valid command
(READ and ODT
commands must satisfy
tXPDLL-AL)
after tXP*2)
Notes: 1. In DDR3 the MR0 bit A12 defines DLL-on/off behaviors only for precharge power-down. There are two
different precharge power-down states possible: one with DLL-on (fast exit, bit A12 = 1) and one with
DLL-off (slow exit, bit A12 = 0).
2. Because it is an exit after precharge power-down the valid commands are: bank activate (ACT), auto-
refresh (REF), mode register set (MRS), self-refresh (SELF).
Data Sheet E1248E40 (Ver. 4.0)
35
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CK
/CK
BA
0 to 2
7
0
0
Address
(A0 to A12)
1FFF
0 0 0 0
0000
H
/CS
/RAS
/CAS
/WE
Command
/D
/D
D
D
/D
/D
D
D
/D
/D
D
DQ
FF 00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00 FF FF 00 0
0 to 7
IDD2N/ IDD3N measurement loop
DM
IDD2N/IDD3N Example (DDR3-800-555, 512Mb ×8)
Data Sheet E1248E40 (Ver. 4.0)
36
EDJ1108BABG, EDJ1116BABG
IDD Measurement Conditions for IDD3N, IDD3P (fast exit)
Symbol
IDD3N
IDD3P (1)
Active power-down current*
(always fast exit)
Name
Active standby current
Measurement Condition
Timing Diagram Example
Figure IDD2N/IDD3N Example
CKE
H
L
External Clock
tCK
on
on
tCK min (IDD)
tCK min (IDD)
N/A
tRC
N/A
N/A
N/A
N/A
N/A
N/A
H
tRAS
tRCD
tRRD
CL
N/A
N/A
N/A
N/A
AL
N/A
/CS
STABLE
SWITCHIN
Address and command inputs
STABLE
FLOATING
off / 1
(see Definition of SWITCHING table)
SWITCHING
(see Definition of SWITCHING table)
Data inputs
Output buffer DQ, DQS
/ MR1 bit A12
off / 1
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
ODT
/ MR1 bits [A9, A6, A2]
/ MR2 bits [A1, A0]
Burst length
Active banks
Idle banks
N/A
N/A
all
all
none
none
Precharge Power-down
Mode / MR0 bit A12
N/A (Active Power-down
Mode is always “Fast Exit” with DLL-on)
N/A
Note: DDR3 will offer only one active power-down mode with DLL-on (-> fast exit). MR0 bit A12 will not be used for
active power-down. Instead bit A12 will be used to switch between two different precharge power-down
modes.
Data Sheet E1248E40 (Ver. 4.0)
37
EDJ1108BABG, EDJ1116BABG
IDD Measurement Conditions for IDD4R, IDD4W and IDD7
Symbol
IDD4R
IDD4W
IDD7
Operating current
(Burst read operating)
Operating current
(Burst write operating)
Name
All bank interleave read current
Measurement Condition
Timing Diagram Example
IDD4R Example
CKE
H
H
H
External Clock
tCK
on
on
on
tCK min (IDD)
tCK min (IDD)
tCK min (IDD)
tRC min. (IDD)
tRAS min. (IDD)
tRCD min. (IDD)
tRRD min. (IDD)
CL (IDD)
tRC
N/A
N/A
tRAS
tRCD
tRRD
CL
N/A
N/A
N/A
N/A
N/A
N/A
CL (IDD)
CL (IDD)
AL
0
0
tRCD min. − 1tCK
H between valid commands
/CS
H between valid commands
H between valid commands
SWITCHING (see Definition of
SWITCHING table);
SWITCHING (see Definition of
SWITCHING table);
only exceptions are read
commands -> IDD4R pattern:
only exceptions are write
commands -> IDD4W pattern:
Command inputs
(/CS, /RAS, /CAS, /WE)
For patterns see pattern in IDD7
Timing Patterns section
R0 D /D /D R1 D /D /D R2 D /D W0 D /D /D W1 D /D /D W2 D /D
/D R3 D /D /D R4 .....
/D W3 D /D /D W4...
Rx = Read from bank x;
Definition of D and /D: see
Wx = Write to bank x;
Definition of D and /D: see
Definition of SWITCHING table Definition of SWITCHING table
Column addresses SWITCHING Column addresses SWITCHING
(see Definition of SWITCHING
table);
A10 must be L all the time!
(see Definition of SWITCHING
table);
A10 must be L all the time!
Row, column addresses
Bank addresses
STABLE during DESELECTs
bank address cycling
(0 -> 1 -> 2 -> 3 ...), see pattern
in IDD7 Timing Patterns section
bank address cycling
(0 -> 1 -> 2 -> 3 ...)
bank address cycling
(0 -> 1 -> 2 -> 3 ...)
Seamless read data burst (BL8):
output data switches every
clock, which means that Read
data is stable during one clock
cycle.
Read data (BL8): output data
Seamless write data burst (BL8): switches every clock, which
input data switches every clock, means that Read data is stable
which means that write data is
stable during one clock cycle.
during one clock cycle.
Data I/O
To achieve IOUT = 0mA the
output buffer should be switched
off by MR1 bit A12 set to “1”.
To achieve IOUT = 0mA the
output buffer should be switched
off by MR1 bit A12 set to “1”.
DM is low all the time
Output Buffer DQ, DQS
/ MR1 bit A12
off / 1
off / 1
off / 1
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
ODT
/ MR1 bits [A9, A6, A2]
/ MR2 bits [A1, A0]
8 fixed / MR0 bits [A1, A0] =
{0,0}
8 fixed / MR0 bits [A1, A0] =
{0,0}
Burst length
8 fixed / MR0 [A1, A0] = {0,0}
Active banks
Idle banks
all
all
all, rotational
none
none
none
Precharge Power-down
Mode / MR0 bit A12
N/A
N/A
N/A
Data Sheet E1248E40 (Ver. 4.0)
38
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12
CK
/CK
BA
1
2
3
0
0 to 2
Address
(A0 to A9)
3FF
000
3FF
0 0 0
Address
(A10)
L
Address
(A11 to A12)
11
00
11
0 0
/CS
/RAS
/CAS
/WE
Command
0 to 2
READ
D
/D
/D
READ
D
/D
/D
READ
D
/D
/D
READ
D
DQ
00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00 FF FF
0 to 7
Start of measurement loop
DM
IDD4R Example* (DDR3-800-555, 512Mb ×8)
Note: Data DQ is shown but the output buffer should be switched off (per MR1 bit A12 = 1) to achieve IOUT = 0mA.
Address inputs are split into 3 parts.
Data Sheet E1248E40 (Ver. 4.0)
39
EDJ1108BABG, EDJ1116BABG
IDD7 Timing Patterns
The detailed timings are shown in the IDD7 Timing Patterns for 8 Banks tables.
tFAW tFAW tRRD tRRD
Speed bins
Bin
Organization (ns)
(tCK) (ns)
(tCK) Timing Patterns
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D A4
RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D
DDR3-800
all
×8
40
16
10
4
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
D D
A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3
RA3 D D D D D D D A4 RA4 D D D D A5 RA5 D D D D A6
RA6 D D D D A7 RA7 D D D D D D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
D D
A0 RA0 D D D A1 RA1 D D D A2 RA2 D D D A3 RA3 D D
D D D D D D D D D D D A4 RA4 D D D A5 RA5 D D D A6
RA6 D D D A7 RA7 D D D D D D D D D D D D D
A0 RA0 D D D A1 RA1 D D D A2 RA2 D D D A3 RA3 D D
D D D D D A4 RA4 D D D A5 RA5 D D D A6 RA6 D D D
A7 RA7 D D D D D D D
all
all
all
all
all
all
×16
50
20
10
4
DDR3-1066
DDR3-1333
DDR3-1600
×8
37.5
50
20
27
20
30
24
7.5
10
6
4
6
4
5
5
×16
×8
30
×16
×8
45
7.5
6
30
Remark: Ax = Active command for bank x.
RAx = Read with auto precharge command from bank x.
ex. RA0 = READA command from bank 0
Notes: 1. All banks are being interleaved at minimum tRC (IDD) without violating tRRD (IDD) and tFAW (IDD) using
a burst length = 8.
2. Control and address bus inputs are STABLE during DESELECTs.
3. IOUT = 0mA.
Data Sheet E1248E40 (Ver. 4.0)
40
EDJ1108BABG, EDJ1116BABG
IDD Measurement Conditions for IDD5B
Symbol
IDD5B
Name
Burst refresh current
Measurement Condition
Timing Diagram Example
CKE
H
External Clock
on
tCK
tCK min. (IDD)
tRC
N/A
tRAS
N/A
tRCD
N/A
tRRD
N/A
tRFC
tRFC min. (IDD)
N/A
CL
AL
N/A
/CS
H between valid commands
SWITCHING
SWITCHING
Address and command inputs
Data inputs
Output buffer DQ, DQS
/ MR1 bit A12
off / 1
disabled
/ [0,0,0]
/ [0,0]
ODT
/ MR1 bits [A9, A6, A2]
/ MR2 bits [A1, A0]
Burst length
Active banks
Idle banks
N/A
Refresh command every tRFC = tRFC (min.)
none
Precharge Power-down
Mode / MR0 bit A12
N/A
Data Sheet E1248E40 (Ver. 4.0)
41
EDJ1108BABG, EDJ1116BABG
IDD Measurement Conditions for IDD6 and IDD6ET
Symbol
IDD6
IDD6ET
Self-refresh current extended temperature
Self-refresh current normal temperature range
TC = 0 to +85°C
range
Name
TC = 0 to +95°C
Measurement Condition
Temperature
TC = +85°C
TC = +95°C
Auto Self-refresh (ASR) /
MR2 bit A6
Disabled / 0
Disabled / 0
Self-Refresh Temperature Range
(SRT) / MR2 bit A7
Disabled / 0
Enabled / 1
CKE
L
L
External Clock
tCK
OFF; CK and /CK at L
OFF; CK and /CK at L
N/A
N/A
tRC
N/A
N/A
tRAS
tRCD
tRRD
CL
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
AL
N/A
N/A
/CS
FLOATING
FLOATING
Command inputs
/RAS, /CAS, /WE)
FLOATING
FLOATING
Row, column addresses
Bank addresses
Data I/O
FLOATING
FLOATING
FLOATING
FLOATING
FLOATING
FLOATING
Output Buffer DQ, DQS
/ MR1 bit A12
off / 1
off / 1
disabled
/ [0,0,0]
/ [0,0]
disabled
/ [0,0,0]
/ [0,0]
ODT
/ MR1 bits [A9, A6, A2]
/ MR2 bits [A1, A0]
Burst length
Active banks
Idle banks
8 fixed / MR0 bits [A1, A0] = {0,0}
all during self-refresh actions
all between self-refresh actions
8 fixed / MR0 bits [A1, A0] = {0,0}
all during self-refresh actions
all between self-refresh actions
Precharge Power-down
Mode / MR0 bit A12
N/A
N/A
IDD6 Current Definition
Parameter
Symbol
Parameter/Condition
CKE ≤ 0.2V; external clock off, CK and /CK at 0V; Other control and address
inputs are FLOATING; Data Bus inputs are FLOATING, PASR disabled.
Applicable for MR2 settings A6 = 0 and A7 = 0.
Normal temperature range self-
refresh current
IDD6
CKE ≤ 0.2V; external clock off, CK and /CK at 0V; Other control and address
inputs are FLOATING; Data Bus inputs are FLOATING, PASR disabled.
Applicable for MR2 settings A6 = 0 and A7 = 1
CKE ≤ 0.2V; external clock off, CK and /CK at 0V; Other control and address
inputs are FLOATING; Data Bus inputs are FLOATING, PASR disabled.
Applicable when ASR is enabled by MR2 settings A6 = 1 and A7 = 0.
Extended temperature range
self-refresh current
IDD6ET
IDD6TC
Auto self-refresh current
Data Sheet E1248E40 (Ver. 4.0)
42
EDJ1108BABG, EDJ1116BABG
Electrical Specifications
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
× 8
× 16
Parameter
Symbol
IDD0
Data rate (Mbps) max.
max.
Unit
mA
Notes
1600
1333
1066
800
TBD
120
110
100
Operating current
(ACT-PRE)
140
130
115
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
TBD
140
125
115
Operating current
(ACT-READ-PRE)
170
155
140
IDD1
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
TBD
40
40
35
30
IDD2PF
IDD2PS
IDD2Q
Fast PD Exit
Slow PD Exit
35
30
Precharge power-down
standby current
TBD
14
14
13
12
13
12
TBD
Precharge quiet standby
current
70
70
60
50
60
50
TBD
75
75
65
55
Precharge standby current IDD2N
65
55
TBD
Active power-down current
IDD3P
45
45
40
35
40
(Always fast exit)
35
TBD
85
95
85
75
Active standby current
IDD3N
IDD4R
IDD4W
IDD5B
IDD7R
75
65
TBD
220
180
140
TBD
240
200
160
TBD
335
315
295
TBD
345
285
260
Operating current
(Burst read operating)
290
230
180
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
Operating current
(Burst write operating)
330
270
220
335
315
295
Burst refresh current
All bank interleave read
current
380
330
315
Data Sheet E1248E40 (Ver. 4.0)
43
EDJ1108BABG, EDJ1116BABG
Self-Refresh Current (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
× 8
× 16
Parameter
Symbol
IDD6S
Grade
max.
max.
Unit
mA
Notes
Self-refresh current
normal temperature range
10
10
Self-refresh current
extended temperature
range
IDD6ET
IDD6TC
18
18
18
18
mA
mA
Auto self-refresh current
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
ILI
Value
Unit
µA
Notes
Input leakage current
Output leakage current
2
5
VDD ≥ VIN ≥ VSS
ILO
µA
VDDQ ≥ VOUT ≥ VSS
Data Sheet E1248E40 (Ver. 4.0)
44
EDJ1108BABG, EDJ1116BABG
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Input pin capacitance, CK and /CK
DDR3-1600, 1333
DDR3-1066, 800
Delta input pin capacitance, CK and /CK
DDR3-1600, 1333
DDR3-1066, 800
Input pin capacitance, control pins
DDR3-1600, 1333
Symbol
CCK
Pins
min.
0.8
0.8
0
max.
1.4
Unit
pF
pF
pF
pF
pF
pF
Notes
1, 3
1, 3
1, 2
1, 2
1
1.6
CK, /CK
0.15
0.15
1.3
CDCK
0
0.75
0.75
CIN_CTRL
/CS, CKE, ODT
DDR3-1066, 800
1.5
1
Input pin capacitance, address and
command pins
0.75
1.3
pF
1
CIN_ADD_CMD
CDIN_CTRL
/RAS, /CAS, /WE, Address
/CS, CKE, ODT
DDR3-1600, 1333
DDR3-1066, 800
Delta input pin capacitance, control pins
DDR3-1600, 1333
0.75
−0.4
−0.5
1.5
0.2
0.3
pF
pF
pF
1
1, 4
1, 4
DDR3-1066, 800
Delta input pin capacitance, address and
command pins
DDR3-1600, 1333
−0.4
0.4
pF
1, 5
CDIN_ADD_CMD /RAS, /CAS, /WE, Address
DDR3-1066, 800
Input/output pin capacitance
DDR3-1600
−0.5
0.5
2.3
pF
pF
1, 5
1, 6
1.5
CIO
DDR3-1333
1.5
1.5
2.5
3.0
pF
pF
1, 6
1, 6
DQ, DQS, /DQS,
TDQS, /TDQS
DM
DDR3-1066, 800
Delta input/output pin capacitance
DDR3-1600, 1333
DDR3-1066, 800
Delta input/output pin capacitance
DDR3-1600, 1333
−0.5
−0.5
0
0.3
pF
pF
pF
1, 7, 8
1, 7, 8
1, 10
CDIO
0.3
0.15
CDDQS
CZQ
DQS, /DQS
ZQ
DDR3-1066, 800
0
0.2
3
pF
pF
1, 10
1, 9
Input/output pin capacitance of ZQ
Notes: 1. VDD, VDDQ, VSS, VSSQ applied and all other pins (except the pin under test) floating.
VDD = VDDQ =1.5V, VBIAS=VDD/2
2. Absolute value of CCK(CK-pin) − CCK(/CK-pin)
3. CCK (min.) will be equal to CIN (min.)
4. CDIN_CTRL = CIN_CTRL − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
5. CDIN_ADD_CMD = CIN_ADD_CMD − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
6. Although the DM, TDQS and /TDQS pins have different functions, the loading matches DQ and DQS.
7. DQ should be in high impedance state.
8. CDIO = CIO (DQ, DM) −0.5 × (CIO(DQS-pin) + CIO(/DQS-pin)).
9. Maximum external load capacitance on ZQ pin: 5pF.
10 Absolute value of CIO(DQS) − CIO(/DQS)
Data Sheet E1248E40 (Ver. 4.0)
45
EDJ1108BABG, EDJ1116BABG
Standard Speed Bins
[DDR3-1600 Speed Bins]
Speed Bin
DDR3-1600
10-10-10
DDR3-1600
11-11-11
CL-tRCD-tRP
/CAS write
Symbol
latency
min.
12.5
12.5
12.5
47.5
35
max.
20
min.
max.
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
tAA
13.75
tRCD
13.75
tRP
13.75
tRC
48.75
tRAS
9 × tREFI
3.3
35
9 × tREFI
Reserved
Reserved
3.3
9
tCK (avg)@CL=5
CWL = 5
2.5
Reserved
Reserved
2.5
1, 2, 3, 4, 8
CWL = 6, 7, 8 Reserved
Reserved
3.3
4
tCK (avg)@CL=6
tCK (avg)@CL=7
CWL = 5
CWL = 6
CWL = 7, 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5, 6
CWL= 7
2.5
1, 2, 3, 8
Reserved
Reserved
Reserved
1.875
Reserved
Reserved
Reserved
< 2.5
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
1.875
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
< 2.5
1, 2, 3, 4, 8
4
4
1, 2, 3, 4, 8
1, 2, 3, 4
1, 2, 3, 4
4
Reserved
Reserved
Reserved
1.875
Reserved
Reserved
Reserved
< 2.5
tCK (avg)@CL=8
1, 2, 3, 8
1, 2, 3, 4
1, 2, 3, 4
4
Reserved
Reserved
Reserved
1.5
Reserved
Reserved
Reserved
< 1.875
Reserved
Reserved
< 1.875
< 1.5
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
1.5
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
< 1.875
tCK (avg)@CL=9
1, 2, 3, 4
1, 2, 3, 4
4
CWL= 8
Reserved
Reserved
1.5
tCK (avg)@CL=10
tCK (avg)@CL=11
Supported CL settings
CWL = 5, 6
CWL= 7
1, 2, 3
5
CWL= 8
1.25
Reserved
Reserved
1.25
Reserved
Reserved
< 1.5
CWL = 5, 6, 7 Reserved
Reserved
< 1.5
4
CWL= 8
CWL= 8
1.25
1, 2, 3
5
Optional
Optional
1.25
< 1.5
5, 6, 7, 8, 9, 10
6, 8, 10, 11
nCK
nCK
Supported CWL
settings
5, 6, 7, 8
5, 6, 7, 8
Data Sheet E1248E40 (Ver. 4.0)
46
EDJ1108BABG, EDJ1116BABG
[DDR3-1333 Speed Bins]
Speed Bin
DDR3-1333G
8-8-8
DDR3-1333H
9-9-9
CL-tRCD-tRP
/CAS write
Symbol
latency
min.
max.
20
min.
max.
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
Notes
tAA
12
13.5
tRCD
12
13.5
tRP
12
13.5
tRC
48.0
49.5
tRAS
36
9 × tREFI
3.3
36
9 × tREFI
Reserved
Reserved
3.3
9
tCK (avg)@CL=5
CWL = 5
CWL = 6, 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5, 6
CWL= 7
2.5
Reserved
Reserved
2.5
1, 2, 3, 4, 7
Reserved
2.5
Reserved
3.3
4
tCK (avg)@CL=6
tCK (avg)@CL=7
tCK (avg)@CL=8
1, 2, 3, 7
Reserved
Reserved
Reserved
1.875
Reserved
Reserved
Reserved
< 2.5
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
1.875
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
< 2.5
1, 2, 3, 4, 7
4
4
1, 2, 3, 4, 7
Reserved
Reserved
1.875
Reserved
Reserved
< 2.5
1, 2, 3, 4
4
1, 2, 3, 7
1.5
< 1.875
Reserved
< 1.875
Reserved
< 1.875
Optional
Reserved
Reserved
< 1.5
Reserved
Reserved
< 1.875
1, 2, 3, 4
tCK (avg)@CL=9
tCK (avg)@CL=10
Reserved
1.5
4
1, 2, 3, 4
CWL = 5, 6
CWL= 7
Reserved
1.5
Reserved
1.5
Reserved
< 1.875
4
1, 2, 3
5
CWL= 7
Optional
5, 6, 7, 8, 9, 10
Optional
6, 8, 9, 10
Optional
Supported CL settings
Supported CWL
settings
5, 6, 7
5, 6, 7
nCK
Data Sheet E1248E40 (Ver. 4.0)
47
EDJ1108BABG, EDJ1116BABG
[DDR3-1066 Speed Bins]
Speed Bin
DDR3-1066E
6-6-6
DDR3-1066F
DDR3-1066G
8-8-8
CL-tRCD-tRP
/CAS write
Symbol
tAA
7-7-7
latency
min.
max.
min.
max.
20
min.
15
max.
Unit
ns
Notes
11.25
11.25
11.25
48.75
37.5
20
13.125
13.125
13.125
50.625
37.5
20
tRCD
tRP
15
ns
15
ns
tRC
52.50
37.5
ns
tRAS
9 × tREFI
9 × tREFI
9 × tREFI
ns
9
1, 2, 3,
4, 6
tCK (avg)@CL=5 CWL = 5
2.5
3.3
Reserved Reserved Reserved Reserved ns
CWL = 6
tCK (avg)@CL=6 CWL = 5
CWL = 6
Reserved Reserved Reserved Reserved Reserved Reserved ns
4
2.5
3.3
2.5
3.3
2.5
3.3
ns
1, 2, 3, 6
1, 2, 3, 4
4
1.875
< 2.5
Reserved Reserved Reserved Reserved ns
tCK (avg)@CL=7 CWL = 5
CWL = 6
Reserved Reserved Reserved Reserved Reserved Reserved ns
1.875 < 2.5 1.875 < 2.5 Reserved Reserved ns
Reserved Reserved Reserved Reserved Reserved Reserved ns
1, 2, 3, 4
4
tCK (avg)@CL=8 CWL = 5
CWL = 6
1.875
< 2.5
1.875
< 2.5
1.875
< 2.5
ns
1, 2, 3
Supported CL
settings
5, 6, 7, 8
6, 7, 8
6, 8
nCK
Supported CWL
settings
5, 6
5, 6
5, 6
nCK
[DDR3-800 Speed Bins]
Speed Bin
DDR3-800F
5-5-5
DDR3-800E
CL-tRCD-tRP
6-6-6
/CAS write
Symbol
latency
min.
12.5
12.5
12.5
50
max.
min.
15
max.
20
Unit
ns
ns
ns
ns
ns
ns
ns
Notes
tAA
20
tRCD
15
tRP
15
tRC
52.5
37.5
Reserved
2.5
tRAS
37.5
2.5
9 × tREFI
3.3
9 × tREFI
Reserved
3.3
9
tCK (avg)@CL=5
tCK (avg)@CL=6
Supported CL settings
Supported CWL settings
CWL = 5
CWL = 5
1, 2, 3, 4
1, 2, 3
2.5
3.3
5, 6
5
6
nCK
nCK
5
Notes: 1 The CL setting and CWL setting result in tCK (avg) (min.) and tCK (avg) (max.) requirements. When
making a selection of tCK (avg), both need to be fulfilled: Requirements from CL setting as well as
requirements from CWL setting.
2. tCK (avg) (min.) limits: Since /CAS latency is not purely analog - data and strobe output are synchronized
by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the
next smaller JEDEC standard tCK (avg) value (2.5, 1.875, 1.5, or 1.25ns) when calculating
CL (nCK) = tAA (ns) / tCK (avg)(ns), rounding up to the next ‘Supported CL’.
3. tCK (avg) (max.) limits: Calculate tCK (avg) + tAA (max.)/CL selected and round the resulting tCK (avg)
down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875ns or 1.25ns). This result is tCK (avg) (max.)
corresponding to CL selected.
Data Sheet E1248E40 (Ver. 4.0)
48
EDJ1108BABG, EDJ1116BABG
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. 'Optional' settings allow certain devices in the industry to support this setting, however, it is not a
mandatory feature.
6. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1066 Speed Bins which are not subject to production tests but verified by design/characterization.
7. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1333 Speed Bins which is not subject to production tests but verified by design/characterization.
Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1600 Speed Bins which is not subject to production tests but verified by design/characterization.
8
9. tREFI depends on operating case temperature (TC).
Data Sheet E1248E40 (Ver. 4.0)
49
EDJ1108BABG, EDJ1116BABG
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)
• New units tCK(avg) and nCK, are introduced in DDR3.
tCK(avg): actual tCK(avg) of the input clock under operation.
nCK: one clock cycle of the input clock, counting the actual clock edges.
AC Characteristics [DDR3-1600, 1333]
-GL, -GN
-DG, -DJ
1333
Data rate (Mbps)
Parameter
1600
min.
Symbol
max.
3333
min.
max.
3333
Unit
ps
Notes
6
Average clock cycle time
Minimum clock cycle time
(DLL-off mode)
tCK (avg)
1250
1500
tCK (DLL-off) 8
8
ns
Average CK high-level width
tCH (avg)
tCL (avg)
0.47
0.53
0.53
0.47
0.47
0.53
0.53
tCK (avg)
tCK (avg)
Average CK low-level width
0.47
12.5 (GL)
12 (DG)
Active to read or write command delay tRCD
ns
ns
ns
26
26
13.75 (GN)
13.5 (DJ)
12.5 (GL)
13.75 (GN)
47.5 (GL)
48.75 (GN)
12 (DG)
13.5 (DJ)
48 (DG)
49.5 (DJ)
Precharge command period
tRP
Active to active/auto-refresh command
time
tRC
26
Active to precharge command
tRAS
35
9 × tREFI 36
9 × tREFI ns
26
Active bank A to active bank B
command period
(x8)
Active bank A to active bank B
command period
(x16)
Four active window
(x8)
(x16)
Address and control input hold time
(VIH/VIL (DC) levels)
Address and control input setup time
(VIH/VIL (AC) levels)
Address and control input setup time
(VIH/VIL (AC150) levels)
DQ and DM input hold time
(VIH/VIL (DC) levels)
DQ and DM input setup time
(VIH/VIL (AC) levels)
tRRD
tRRD
tRRD
tRRD
tFAW
tFAW
tIH (base)
6
6
ns
26, 27
26, 27
26, 27
26, 27
26
4
4
nCK
7.5
4
ns
nCK
ns
30
30
45
140
ns
26
120
45
ps
16, 23
tIS (base)
65
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
16, 23
tIS (base)
AC150
16, 23,
31
45 + 125
45
65 + 125
tDH (base)
tDS (base)
tIPW
65
17, 25
17, 25
32
10
30
Control and Address input pulse width
for each input
DQ and DM input pulse width for each
input
560
360
620
400
tDIPW
32
12, 13,
14, 37
12, 13,
14, 37
12, 13,
14, 37
12, 13,
14, 37
DQ high-impedance time
DQ low-impedance time
tHZ (DQ)
tLZ (DQ)
tHZ (DQS)
tLZ (DQS)
225
225
225
225
100
250
250
250
250
125
−450
−500
DQS, /DQS high-impedance time
(RL + BL/2 reference)
DQS, /DQS low-impedance time
(RL − 1 reference)
DQS, /DQS to DQ skew, per group, per
access
/CAS to /CAS command delay
Data Sheet E1248E40 (Ver. 4.0)
−450
−500
tDQSQ
tCCD
ps
12, 13
4
4
nCK
50
EDJ1108BABG, EDJ1116BABG
-GL, -GN
1600
-DG, -DJ
1333
Data rate (Mbps)
Parameter
Symbol
min.
max.
min.
0.38
max.
Unit
Notes
12, 13,
38
DQ output hold time from DQS, /DQS tQH
DQS, /DQS rising edge output access
time from rising CK, /CK
DQS latching rising transitions to
associated clock edges
DQS falling edge hold time from rising
CK
DQS falling edge setup time to rising
CK
0.38
−225
−0.27
0.18
0.18
tCK (avg)
12, 13,
37
tDQSCK
225
−255
−0.25
0.2
255
ps
tDQSS
tDSH
tDSS
0.27
0.25
tCK (avg) 24
tCK (avg) 24, 36
tCK (avg) 24, 36
0.2
DQS input high pulse width
DQS input low pulse width
tDQSH
tDQSL
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
tCK (avg) 34, 35
tCK (avg) 33, 35
12, 13,
tCK (avg)
38
12, 13,
tCK (avg)
38
DQS output high time
DQS output low time
tQSH
tQSL
0.40
0.40
0.40
4
0.40
4
Mode register set command cycle time tMRD
nCK
Mode register set command update
tMOD
15
15
12
0.9
ns
27
27
1, 19,
38
11, 12,
13, 38
delay
tMOD
12
nCK
Read preamble
Read postamble
tRPRE
tRPST
0.9
tCK (avg)
0.3
0.3
tCK (avg)
Write preamble
tWPRE
tWPST
tWR
0.9
0.3
15
0.9
0.3
15
tCK (avg) 1
Write postamble
tCK (avg) 1
Write recovery time
ns
26
Auto precharge write recovery +
precharge time
Multi-Purpose register recovery time
Read to write command delay
(BC4MRS, BC4OTF)
WR + RU
WR + RU
tDAL
nCK
nCK
(tRP/tCK (avg))
(tRP/tCK (avg))
tMPRR
tRTW
1
1
29
RL + tCCD/2 +
2nCK − WL
RL + tCCD/2 +
2nCK − WL
RL + tCCD +
2nCK − WL
RL + tCCD +
2nCK − WL
(BL8MRS, BL8OTF)
tRTW
18, 26,
27
18, 26,
27
Internal write to read command delay tWTR
tWTR
7.5
7.5
ns
4
4
nCK
Internal read to precharge command
tRTP
7.5
7.5
ns
26, 27
26, 27
28
delay
tRTP
4
4
nCK
Active to READ with auto precharge
command delay
tRAP
tRCD min
tRCD min
Minimum CKE low width for self-refresh
entry to exit timing
tCKE (min.)
+1nCK
tCKE (min.)
+1nCK
tCKESR
Valid clock requirement after self-
refresh entry or power-down entry
tCKSRE
tCKSRE
10
5
10
5
ns
27
27
nCK
Data Sheet E1248E40 (Ver. 4.0)
51
EDJ1108BABG, EDJ1116BABG
-GL, -GN
1600
-DG, -DJ
1333
Data rate (Mbps)
Parameter
Symbol
tCKSRX
tCKSRX
tXS
min.
max.
min.
10
5
tRFC (min.) +
10
max.
Unit
ns
Notes
27
Valid clock requirement before self-
refresh exit or power-down exit
10
5
nCK
ns
27
tRFC (min.) +
10
5
Exit self-refresh to commands not
requiring
a locked DLL
27
tXS
5
nCK
nCK
27
Exit self-refresh to commands requiring
a locked DLL
tXSDLL
tDLLK (min.)
tDLLK (min.)
Auto-refresh to active/auto-refresh
tRFC
tREFI
110
110
ns
command time
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
(+85°C < TC ≤ +95°C)
7.8
3.9
7.8
3.9
µs
tREFI
tCKE
tCKE
tXPR
tXPR
tDLLK
tPD
µs
5
5.625
ns
27
27
27
27
CKE minimum pulse width
(high and low pulse width)
3
3
nCK
ns
tRFC (min.)+10
tRFC (min.)+10
Exit reset from CKE high to a valid
command
5
5
nCK
nCK
DLL locking time
512
512
Power-down entry to exit time
tCKE (min.)
9 × tREFI tCKE (min.)
9 × tREFI
15
2
Exit precharge power-down with DLL
frozen to commands requiring a locked
DLL
Exit power-down with DLL on to any
valid command; Exit precharge power-
down with DLL frozen to commands
not requiring a locked DLL
tXPDLL
tXPDLL
tXP
24
10
6
24
10
6
ns
nCK
ns
2
27
tXP
3
3
nCK
27
Command pass disable/enable delay tCPDED
Timing of last ACT command to power-
1
1
1
1
nCK
nCK
tACTPDEN
20
20
down entry
Timing of last PRE command to power-
tPRPDEN
tRDPDEN
1
1
nCK
nCK
down entry
Timing of last READ/READA command
to power-down entry
RL + 4 + 1
RL + 4 + 1
Timing of last WRIT command to
WL + 4 +
WL + 4 +
power-down entry
tWRPDEN
tWRPDEN
tWRAPDEN
nCK
nCK
nCK
9
tWR/tCK (avg)
tWR/tCK (avg)
(BL8MRS, BL8OTF, BC4OTF)
WL + 2 +
tWR/tCK (avg)
WL + 2 +
tWR/tCK (avg)
(BC4MRS)
9
Timing of last WRITA command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
WL + 4 +
WR + 1
WL + 4 +
WR + 1
10
WL + 2 +
WR + 1
WL + 2 +
WR + 1
(BC4MRS)
tWRAPDEN
tREFPDEN
nCK
nCK
10
Timing of last REF command to power-
down entry
1
1
20, 21
Timing of last MRS command to
power-down entry
tMRSPDEN tMOD (min.)
tMOD (min.)
Data Sheet E1248E40 (Ver. 4.0)
52
EDJ1108BABG, EDJ1116BABG
ODT AC Electrical Characteristics [DDR3-1600, 1333]
-GL, -GN
-DG, -DJ
1333
Data rate (Mbps)
Parameter
1600
min.
Symbol
tAON
max.
225
min.
max.
250
Unit
ps
Notes
7, 12,
37
RTT turn-on
−225
−250
Asynchronous RTT turn-on delay
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference
Asynchronous RTT turn-off delay
(power-down with DLL frozen)
ODT to power-down entry/exit
latency
tAONPD
tAOF
2
8.5
0.7
8.5
2
8.5
0.7
8.5
ns
tCK
(avg)
8, 12,
37
0.3
0.3
tAOFPD
tANPD
2
2
ns
WL – 1.0
WL – 1.0
nCK
ODT turn-on Latency
ODT turn-off Latency
ODTLon
ODTLoff
WL – 2
WL – 2
WL – 2
WL – 2
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
nCK
ODT Latency for changing from
RTT_Nom to RTT_WR
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODTLcnw WL – 2
ODTLcwn4
WL – 2
WL – 2.0
WL – 2.0
nCK
nCK
4 + ODTLoff
4 + ODTLoff
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODTLcwn8
6 + ODTLoff
6 + ODTLoff
nCK
ODT high time without WRIT
command or with WRIT command ODTH4
and BC4
4
6
4
6
nCK
nCK
ODT high time with WRIT command
ODTH8
and BL8
tCK
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
12, 37
30
(avg)
Power-up and reset calibration time tZQinit
Normal operation full calibration
time
Normal operation short calibration
time
512
256
512
256
nCK
tZQoper
tZQCS
nCK
64
64
nCK
Write Leveling Characteristics [DDR3-1600, 1333]
-GL, -GN
-DG, -DJ
1333
1600
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
First DQS pulse rising edge after
write leveling mode is
programmed
DQS, /DQS delay after write
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to rising tWLS
DQS, /DQS crossing
tWLMRD
40
40
nCK
nCK
ps
3
3
tWLDQSEN
25
25
165
195
Write leveling hold time from
rising DQS, /DQS crossing to
rising CK, /CK crossing
tWLH
165
195
ps
Write leveling output delay
tWLO
0
0
7.5
2
0
0
9
2
ns
ns
Write leveling output error
tWLOE
Data Sheet E1248E40 (Ver. 4.0)
53
EDJ1108BABG, EDJ1116BABG
AC Characteristics [DDR3-1066, 800]
-AC, -AE, -AG
1066
-8A, -8C
800
Data rate (Mbps)
Parameter
Symbol
min.
max.
3333
min.
max.
3333
Unit
ps
Notes
6
Clock cycle time Average CL = X
Minimum clock cycle time
(DLL-off mode)
tCK(avg)
1875
2500
tCK(DLL-off)
8
8
ns
Average duty cycle high-level
tCH (avg)
tCL (avg)
0.47
0.47
0.53
0.53
0.47
0.47
0.53
0.53
tCK (avg)
tCK (avg)
Average duty cycle low-level
11.25 (AC)
13.1 (AE)
15 (AG)
11.25 (AC)
13.1 (AE)
15 (AG)
48.75 (AC)
50.6 (AE)
52.5 (AG)
12.5 (8A)
15 (8C)
Active to read or write command delay tRCD
ns
ns
ns
26
26
26
12.5 (8A)
15 (8C)
Precharge command period
tRP
tRC
Active to active/auto-refresh command
time
50 (8A)
52.5 (8C)
Active to precharge command
Active bank A to active bank B
command period
tRAS
37.5
7.5
4
9 × tREFI 37.5
9 × tREFI ns
26
tRRD
tRRD
10
4
ns
26, 27
26, 27
26, 27
26, 27
26
(x8)
nCK
Active bank A to active bank B
command period
(x16)
Four active window
(x8)
(x16)
tRRD
tRRD
10
10
4
ns
4
nCK
ns
tFAW
tFAW
tIH (base)
37.5
50
40
50
275
ns
26
Address and control input hold time
(VIH/VIL (DC) levels)
200
ps
16, 23
Address and control input setup time
(VIH/VIL (AC) levels)
Address and control input setup time tIS (base)
(VIH/VIL (AC150) levels)
DQ and DM input hold time
(VIH/VIL (DC) levels)
DQ and DM input setup time
(VIH/VIL (AC) levels)
Control and Address input pulse width
for each input
DQ and DM input pulse width for each
input
tIS (base)
125
200
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
16, 23
16, 23,
31
125 + 150
100
200 + 150
AC150
tDH (base)
150
75
17, 25
17, 25
32
tDS (base)
tIPW
25
780
900
600
tDIPW
490
32
12, 13,
14, 37
12, 13,
14, 37
12, 13,
14, 37
12, 13,
14, 37
DQ high-impedance time
tHZ (DQ)
tLZ (DQ)
tHZ (DQS)
tLZ (DQS)
300
300
300
300
150
400
400
400
400
200
DQ low-impedance time
−600
−600
−800
−800
DQS, /DQS high-impedance time
(RL + BL/2 reference)
DQS, /DQS low-impedance time
(RL − 1 reference)
DQS, /DQS -DQ skew, per group, per
access
/CAS to /CAS command delay
tDQSQ
tCCD
ps
12, 13
4
4
nCK
12, 13,
38
DQ output hold time from DQS, /DQS tQH
Data Sheet E1248E40 (Ver. 4.0)
0.38
0.38
tCK (avg)
54
EDJ1108BABG, EDJ1116BABG
-AC, -AE, -AG
1066
-8A, -8C
800
Data rate (Mbps)
Parameter
Symbol
min.
max.
min.
max.
Unit
ps
Notes
DQS, /DQS rising edge output access
time from rising CK, /CK
DQS latching rising transitions to
associated clock edges
DQS falling edge hold time from rising
CK
DQS falling edge setup time to rising
CK
12, 13,
37
tDQSCK
−300
−0.25
0.2
+300
−400
+400
tDQSS
tDSH
tDSS
0.25
−0.25
0.2
0.25
tCK (avg) 24
tCK (avg) 24, 36
tCK (avg) 24, 36
0.2
0.2
DQS input high pulse width
DQS input low pulse width
tDQSH
tDQSL
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
tCK (avg) 34, 35
tCK (avg) 33, 35
12, 13,
tCK (avg)
38
12, 13,
tCK (avg)
38
DQS output high time
DQS output low time
tQSH
tQSL
0.38
0.38
0.38
4
0.38
4
Mode register set command cycle time tMRD
nCK
Mode register set command update
tMOD
15
15
12
0.9
ns
27
27
1, 19,
38
11, 12,
13, 38
delay
tMOD
12
nCK
Read preamble
Read postamble
tRPRE
tRPST
0.9
tCK (avg)
0.3
0.3
tCK (avg)
Write preamble
tWPRE
tWPST
tWR
0.9
0.3
15
0.9
0.3
15
tCK (avg)
tCK (avg)
ns
1
Write postamble
Write recovery time
1
26
Auto precharge write recovery +
precharge time
Multi-Purpose register recovery time
Read to write command delay
(BC4MRS, BC4OTF)
WR + RU
WR + RU
tDAL
nCK
nCK
(tRP/tCK (avg))
(tRP/tCK (avg))
tMPRR
tRTW
1
1
29
RL + tCCD/2 +
2nCK − WL
RL + tCCD/2 +
2nCK − WL
RL + tCCD +
2nCK − WL
RL + tCCD +
2nCK − WL
(BL8MRS, BL8OTF)
tRTW
18, 26,
27
18, 26,
27
Internal write to read command delay tWTR
tWTR
7.5
7.5
ns
4
4
nCK
Internal read to precharge command
tRTP
7.5
7.5
ns
26, 27
26, 27
28
delay
tRTP
4
4
nCK
Active to READ with auto precharge
command delay
tRAP
tRCD min
tRCD min
Minimum CKE low width for self-
refresh entry to exit timing
tCKE (min.)
+1nCK
tCKE (min.)
+1nCK
tCKESR
Valid clock requirement after self-
tCKSRE
tCKSRE
tCKSRX
tCKSRX
tXS
10
5
10
5
ns
27
27
27
27
27
27
refresh entry or power-down entry
nCK
ns
Valid clock requirement before self-
refresh exit or power-down exit
10
10
5
5
nCK
ns
Exit self-refresh to commands not
requiring a locked DLL
tRFC (min.) +
10
5
tRFC (min.) +
10
5
tXS
nCK
Data Sheet E1248E40 (Ver. 4.0)
55
EDJ1108BABG, EDJ1116BABG
-AC, -AE, -AG
1066
-8A, -8C
800
Data rate (Mbps)
Parameter
Symbol
tXSDLL
min.
max.
min.
max.
Unit
nCK
Notes
Exit self-refresh to commands
requiring a locked DLL
Auto-refresh to active/auto-refresh
command time
tDLLK (min.)
110
tDLLK (min.)
tRFC
110
ns
Average periodic refresh interval
tREFI
tREFI
tCKE
tCKE
tXPR
7.8
3.9
7.8
3.9
µs
(0°C ≤ TC ≤ +85°C)
(+85°C < TC ≤ +95°C)
CKE minimum pulse width
(high and low pulse width)
µs
5.625
7.5
ns
27
27
27
27
3
3
nCK
ns
Exit reset from CKE high to a valid
command
tRFC(min.)+10
tRFC(min.)+10
tXPR
tDLLK
tPD
5
5
nCK
nCK
DLL locking time
512
512
Power-down entry to exit time
Exit precharge power-down with DLL
tCKE (min.)
9 × tREFI tCKE (min.)
9 × tREFI
15
2
frozen to commands requiring a locked tXPDLL
DLL
24
24
ns
tXPDLL
10
10
nCK
ns
2
Fast exit/active precharge power-down
tXP
7.5
7.5
27
27
to any command
tXP
3
1
3
1
nCK
nCK
Command pass disable/enable delay tCPDED
Timing of last ACT command to
tACTPDEN
1
1
nCK
nCK
nCK
20
20
power-down entry
Timing of last PRE command to
power-down entry
Timing of last READ/READA
command to power-down entry
tPRPDEN
tRDPDEN
1
1
RL + 4 + 1
RL + 4 + 1
Timing of last WRIT command to
WL + 4 +
WL + 4 +
power-down entry
tWRPDEN
tWRPDEN
tWRAPDEN
nCK
nCK
nCK
9
tWR/tCK (avg)
tWR/tCK (avg)
(BL8MRS, BL8OTF, BC4OTF)
WL + 2 +
tWR/tCK (avg)
WL + 2 +
tWR/tCK (avg)
(BC4MRS)
9
Timing of last WRITA command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
WL + 4 + WR +
1
WL + 4 +
WR + 1
10
WL + 2 + WR +
1
WL + 2 + WR +
1
(BC4MRS)
tWRAPDEN
tREFPDEN
nCK
nCK
10
Timing of last REF command to
power-down entry
1
1
20, 21
Timing of last MRS command to
power-down entry
tMRSPDEN tMOD (min.)
tMOD (min.)
Data Sheet E1248E40 (Ver. 4.0)
56
EDJ1108BABG, EDJ1116BABG
ODT AC Electrical Characteristics [DDR3-1066, 800]
-AC, -AE, -AG
-8A, -8C
800
Data rate (Mbps)
Parameter
1066
min.
Symbol
tAON
max.
300
min.
max.
400
Unit
ps
Notes
RTT turn-on
–300
–400
7, 12, 37
Asynchronous RTT turn-on delay
tAONPD
tAOF
2
8.5
2
8.5
ns
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference
ODT turn-off (power-down mode) tAOFPD
0.3
0.7
8.5
0.3
0.7
8.5
tCK (avg) 8, 12, 37
2
2
ns
ODT to power-down entry/exit
latency
tANPD
WL – 1.0
WL – 1.0
nCK
ODT turn-on Latency
ODT turn-off Latency
ODTLon
ODTLoff
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
nCK
ODT Latency for changing from
RTT_Nom to RTT_WR
ODTLcnw
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODTLcwn4
4 + ODTLoff
4 + ODTLoff
nCK
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODTLcwn8
6 + ODTLoff
6 + ODTLoff
nCK
ODT high time without WRIT
command or with WRIT command ODTH4
4
6
4
6
nCK
nCK
and BC4
ODT high time with WRIT
ODTH8
command and BL8
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
tCK (avg) 12, 37
nCK
Power-up and reset calibration time tZQinit
512
512
Normal operation full calibration
tZQoper
tZQCS
256
64
256
64
nCK
time
Normal operation short calibration
time
nCK
30
Write Leveling Characteristics [DDR3-1066, 800]
-AC, -AE, -AG
-8A, -8C
800
1066
min.
Parameter
Symbol
max.
min.
max.
Unit
Notes
3
First DQS pulse rising edge after
write leveling mode is
programmed
DQS, /DQS delay after write
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to rising tWLS
DQS, /DQS crossing
tWLMRD
40
40
nCK
nCK
ps
tWLDQSEN
25
25
3
245
325
Write leveling hold time from
rising DQS, /DQS crossing to
rising CK, /CK crossing
tWLH
245
325
ps
Write leveling output delay
tWLO
0
0
9
2
0
0
9
2
ns
ns
Write leveling output error
tWLOE
Data Sheet E1248E40 (Ver. 4.0)
57
EDJ1108BABG, EDJ1116BABG
Notes for AC Electrical Characteristics
Notes: 1. Actual value dependent upon measurement level definitions that are TBD.
2. Commands requiring locked DLL are: READ (and READA) and synchronous ODT commands.
3. The max values are system dependent.
4. WR as programmed in mode register.
5. Value must be rounded-up to next integer value.
6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.
7. ODT turn on time (min.) is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time (max.) is when the ODT resistance is fully on. Both are measured from ODTLon.
8. ODT turn-off time (min.) is when the device starts to turn-off ODT resistance. ODT turn-off time (max.) is
when the bus is in high impedance. Both are measured from ODTLoff.
9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR/tCK to the next integer.
10. WR in clock cycles as programmed in MR0.
11. The maximum read postamble is bound by tDQSCK(min.) plus tQSH(min.) on the left side and
tHZ(DQS)(max.) on the right side.
12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input
clock jitter, this parameter needs to be derated by TBD.
13. Value is only valid for RON34.
14. Single ended signal parameter. Refer to the section of tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes
for definition and measurement method.
15. tREFI depends on operating case temperature (TC).
16. tIS(base) and tIH(base) values are for 1V/ns command/address single-ended slew rate and 2V/ns CK,
/CK differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins
except /RESET, VREF(DC) = VREFCA(DC). See Address / Command Setup, Hold and Derating section
17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, /DQS
differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins except
/RESET, VREF(DC) = VREFCA(DC). See Data Setup, Hold and Slew Rate Derating section.
18. Start of internal write transaction is definited as follows:
For BL8 (fixed by MRS and on- the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (on-the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (fixed by MRS): Rising clock edge 2 clock cycles after WL.
19. The maximum read preamble is bound by tLZ(DQS)(min.) on the left side and tDQSCK(max.) on the right
side.
20. CKE is allowed to be registered low while operations such as row activation, precharge, auto precharge or
refresh are in progress, but power-down IDD spec will not be applied until finishing those operations.
21. Although CKE is allowed to be registered low after a refresh command once tREFPDEN(min.) is satisfied,
there are cases where additional time such as tXPDLL(min.) is also required. See Figure Power-Down
Entry/Exit Clarifications - Case 2.
22. tJIT(duty) = ± { 0.07 × tCK(avg) – [(0.5 - (min (tCH(avg), tCL(avg))) × tCK(avg)] }.
For example, if tCH/tCL was 0.48/0.52, tJIT(duty) would calculate out to ±125ps for DDR3-800.
The tCH(avg) and tCL(avg) values listed must not be exceeded.
23. These parameters are measured from a command/address signal (CKE, /CS, /RAS, /CAS, /WE, ODT,
BA0, A0, A1, etc.) transition edge to its respective clock signal (CK, /CK) crossing. The spec values are
not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are
relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24 These parameters are measured from a data strobe signal ((L/U/T)DQS, /DQS) crossing to its respective
clock signal (CK, /CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.
tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these parameters
should be met whether clock jitter is present or not.
25. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge
to its respective data strobe signal ((L/U/T)DQS/DQS) crossing.
Data Sheet E1248E40 (Ver. 4.0)
58
EDJ1108BABG, EDJ1116BABG
26. For these parameters, the DDR3 SDRAM device is characterized and verified to support
tnPARAM [nCK] = RU{tPARAM [ns] / tCK(avg)}, which is in clock cycles, assuming all input clock jitter
specifications are satisfied.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock
jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the device will
support tnRP =RU{tRP / tCK(avg)} = 6, i.e. as long as the input clock jitter specifications are met,
precharge command at Tm and active command at Tm+6 is valid even if (Tm+6 − Tm) is less than 15ns
due to input clock jitter.
27. These parameters should be the larger of the two values, analog (ns) and number of clocks (nCK).
28 The tRAS lockout circuit internally delays the Precharge operation until the array restore operation has
been completed so that the auto precharge command may be issued with any read or write command.
29 Defined between end of MPR read burst and MRS which reloads MPR or disables.
30 One ZQCS command can effectively correct a minimum of 0.5% (ZQCorrection) of RON and RTT
impedance error within 64nCK for all speed bins assuming the maximum sensitivities specified in the
‘Output Driver Voltage and Temperature Sensitivity’ and ‘ODT Voltage and Temperature Sensitivity’
tables. The appropriate interval between ZQCS commands can be determined from these tables and
other application-specific parameters.
One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and
voltage (Vdriftrate) drift rates that the SDRAM is subject to in the application, is illustrated. The interval
could be defined by the following formula:
×
×
where TSens = max.(dRTTdT, dRONdTM) and VSens = max.(dRTTdV, dRONdVM) define the SDRAM
temperature and voltage sensitivities. For example, if TSens = 1.5%/°C, VSens = 0.15%/mV, Tdriftrate =
1°C/sec and Vdriftrate = 15mV/sec, then the interval between ZQCS commands is calculated as:
×
×
31 The tIS(base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional
100ps of derating to accommodate for the lower alternate threshold of 150mV and another 25ps to
account for the earlier reference point [(175mV − 150mV)/1V/ns].
32 Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the
consecutive crossing of VREF(DC).
33 tDQSL describes the instantaneous differential input low pulse width on DQS − /DQS, as measured from
one falling edge to the next consecutive rising edge.
34 tDQSH describes the instantaneous differential input high pulse width on DQS −/DQS, as measured from
one rising edge to the next consecutive falling edge.
35 tDQSH,act + tDQSL,act = 1tCK,act ; with tXYZ,act being the actual measured value of the respective
timing parameter in the application.
36 tDSH,act + tDSS,act = 1tCK,act ; with tXYZ,act being the actual measured value of the respective timing
parameter in the application.
37 When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tERR(mper),act of the input clock, where 2 ≤ m ≤ 12. (output deratings are relative to the SDRAM input
clock.)
For example, if the measured jitter into a DDR3-800 SDRAM has tERR(mper),act,min = −172ps and
tERR(mper),act,max = +193ps, then tDQSCK,min(derated) = tDQSCK,min − tERR(mper),act,max =
−400ps − 193ps = −593ps and tDQSCK,max(derated) =tDQSCK,max − tERR(mper),act,min = 400ps +
172ps = +572ps. Similarly, tLZ(DQ) forDDR3-800 derates to tLZ(DQ),min(derated) = −800ps − 193ps =
−993ps and tLZ(DQ),max(derated) = 400ps + 172ps = +572ps. Note that tERR(mper),act,min is the
minimum measured value of tERR(nper) where 2 ≤ n ≤ 12, and tERR(mper),act,max is the maximum
measured value of tERR(nper) where 2 ≤ n ≤ 12.
38 When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT(per),act of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR3-800 SDRAM has tCK(avg),act = 2500ps, tJIT(per),act,min
= − 72ps and tJIT(per),act,max = +93ps, then tRPRE,min(derated) = tRPRE,min + tJIT(per),act,min = 0.9
× tCK(avg),act + tJIT(per),act,min = 0.9 × 2500ps − 72ps = +2178ps. Similarly, tQH,min(derated) =
tQH,min + tJIT(per),act,min = 0.38 × tCK(avg),act + tJIT(per),act,min = 0.38 × 2500ps − 72ps = + 878ps.
Data Sheet E1248E40 (Ver. 4.0)
59
EDJ1108BABG, EDJ1116BABG
Clock Jitter [DDR3-1600, 1333]
-GL, -GN
1600
-DG, -DJ
1333
Data rate (Mbps)
Parameter
Symbol
min.
max.
3333
min.
max.
3333
Unit
ps
Notes
1
Average clock period
tCK (avg)
1250
1500
tCK(avg)min + tCK(avg)max+ tCK(avg)min + tCK(avg)max+
Absolute clock period
Clock period jitter
Clock period jitter during
DLL locking period
Cycle to cycle period Jitter
Cycle to cycle clock period jitter
during DLL locking period
tCK (abs)
tJIT (per)
ps
ps
ps
ps
ps
2
6
6
7
7
tJIT(per)min
tJIT(per)max tJIT(per)min
tJIT(per)max
80
−70
70
−80
tJIT (per, lck) −60
tJIT (cc)
60
−70
70
140
120
160
140
tJIT (cc, lck)
Cumulative error across 2 cycles
Cumulative error across 3 cycles
Cumulative error across 4 cycles
Cumulative error across 5 cycles
Cumulative error across 6 cycles
Cumulative error across 7 cycles
Cumulative error across 8 cycles
Cumulative error across 9 cycles
tERR (2per)
tERR (3per)
tERR (4per)
tERR (5per)
tERR (6per)
tERR (7per)
tERR (8per)
tERR (9per)
−103
103
122
136
147
155
163
169
175
180
184
188
−118
−140
−155
−168
−177
−186
−193
−200
−205
−210
−215
118
140
155
168
177
186
193
200
205
210
215
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
8
8
8
8
8
8
8
8
8
8
8
−122
−136
−147
−155
−163
−169
−175
Cumulative error across 10 cycles tERR (10per) −180
Cumulative error across 11 cycles tERR (11per) −184
Cumulative error across 12 cycles tERR (12per) −188
Cumulative error across
n = 13, 14…49, 50 cycles
tERR (nper) min. = (1+0.68in(n)) x tJIT(per) min
tERR (nper) max. = (1+0.68in(n)) x tJIT(per) max
tERR (nper)
tCH (avg)
tCL (avg)
tCH (abs)
ps
9
tCK
(avg)
tCK
(avg)
tCK
(avg)
tCK
(avg)
Average high pulse width
0.47
0.47
0.43
0.43
0.53
0.47
0.47
0.43
0.43
0.53
3
Average low pulse width
0.53
0.53
4
Absolute clock high pulse width
10, 11
Absolute clock low pulse width
Duty cycle jitter
tCL (abs)
tJIT (duty)
10, 12
5
ps
Data Sheet E1248E40 (Ver. 4.0)
60
EDJ1108BABG, EDJ1116BABG
Clock Jitter [DDR3-1066, 800]
-AC, -AE, -AG
1066
-8A, -8C
800
Data rate (Mbps)
Parameter
Symbol
min.
max.
3333
min.
max.
3333
Unit
ps
Notes
1
Average clock period
tCK (avg)
1875
2500
tCK(avg)min + tCK(avg)max+ tCK(avg)min + tCK(avg)max+
Absolute clock period
tCK (abs)
tJIT (per)
ps
ps
ps
ps
ps
2
6
6
7
7
tJIT(per)min
tJIT(per)max tJIT(per)min
tJIT(per)max
100
Clock period jitter
Clock period jitter during
DLL locking period
Cycle to cycle period jitter
Cycle to cycle clock period jitter
during DLL locking period
−90
90
−100
tJIT (per, lck) −80
tJIT (cc)
80
−90
90
180
160
200
180
tJIT (cc, lck)
Cumulative error across 2 cycles
Cumulative error across 3 cycles
Cumulative error across 4 cycles
Cumulative error across 5 cycles
Cumulative error across 6 cycles
Cumulative error across 7 cycles
Cumulative error across 8 cycles
Cumulative error across 9 cycles
tERR (2per)
tERR (3per)
tERR (4per)
tERR (5per)
tERR (6per)
tERR (7per)
tERR (8per)
tERR (9per)
−132
132
157
175
188
200
209
217
224
231
237
242
−147
−175
−194
−209
−222
−232
−241
−249
−257
−263
−269
147
175
194
209
222
232
241
249
257
263
269
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
8
8
8
8
8
8
8
8
8
8
8
−157
−175
−188
−200
−209
−217
−224
Cumulative error across 10 cycles tERR (10per) −231
Cumulative error across 11 cycles tERR (11per) −237
Cumulative error across 12 cycles tERR (12per) −242
Cumulative error across
n=13, 14…49,50 cycles
tERR (nper) min. = (1+0.68in(n)) x tJIT(per) min
tERR (nper) max. = (1+0.68in(n)) x tJIT(per) max
tERR (nper)
tCH (avg)
tCL (avg)
tCH (abs)
ps
9
tCK
(avg)
tCK
(avg)
tCK
(avg)
tCK
(avg)
Average high pulse width
0.47
0.47
0.43
0.43
0.53
0.47
0.47
0.43
0.43
0.53
3
Average low pulse width
0.53
0.53
4
Absolute clock high pulse width
10, 11
Absolute clock low pulse width
Duty cycle jitter
tCL (abs)
tJIT (duty)
10, 12
5
ps
Notes: 1. tCK (avg) is calculated as the average clock period across any consecutive 200cycle window, where each
clock period is calculated from rising edge to rising edge.
N
tCK
N
j
Σ
j = 1
N = 200
2. tCK (abs) is the absolute clock period, as measured from one rising edge to the next consecutive rising
edge. tCK (abs) is not subject to production test.
3. tCH (avg) is defined as the average high pulse width, as calculated across any consecutive 200 high
pulses.
N
(N × t
)
tCH
CK(avg)
j
Σ
j = 1
N = 200
Data Sheet E1248E40 (Ver. 4.0)
61
EDJ1108BABG, EDJ1116BABG
4. tCL (avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses.
N
tCL
(N × t
)
j
CK(avg)
Σ
j = 1
N = 200
5. tJIT (duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of
any single tCH from tCH (avg). tCL jitter is the largest deviation of any single tCL from tCL (avg).
tJIT (duty) is not subject to production test.
tJIT (duty) = Min./Max. of {tJIT (CH), tJIT (CL)}, where:
tJIT (CH) = {tCHj- tCH (avg) where j = 1 to 200}
tJIT (CL) = {tCLj- tCL (avg) where j = 1 to 200}
6. tJIT (per) is defined as the largest deviation of any single tCK from tCK (avg).
tJIT (per) = Min./Max. of { tCKj − tCK (avg) where j = 1 to 200}
tJIT (per) defines the single period jitter when the DLL is already locked. tJIT (per, lck) uses the same
definition for single period jitter, during the DLL locking period only. tJIT (per) and tJIT (per, lck) are not
subject to production test.
7. tJIT (cc) is defined as the absolute difference in clock period between two consecutive clock cycles:
tJIT (cc) = Max. of {tCKj+1 - tCKj}
tJIT (cc) is defines the cycle when the DLL is already locked. tJIT (cc, lck) uses the same definition for
cycle-to-cycle jitter, during the DLL locking period only. tJIT (cc) and tJIT (cc, lck) are not subject to
production test.
8. tERR (nper) is defined as the cumulative error across n multiple consecutive cycles from tCK (avg).
tERR (nper) is not subject to production test.
9
n = from 13 cycles to 50 cycles. This row defines 38 parameters.
10. These parameters are specified per their average values, however it is understood that the following
relationship between the average timing and the absolute instantaneous timing hold at all times.
(minimum and maximum of spec values are to be used for calculations in the table below.)
Parameter
Symbol
min.
max.
Unit
Absolute clock period
tCK (abs) tCK (avg), min. + tJIT (per),min. tCK (avg), max. + tJIT (per),max. ps
Absolute clock high pulse
tCH (avg), min. × tCK (avg),min. tCH (avg), max. × tCK (avg),max.
tCH (abs)
tCL (abs)
ps
ps
width
+ tJIT (duty),min.
+ tJIT (duty),max.
Absolute clock low pulse
width
tCL (avg), min. × tCK (avg),min. tCL (avg), max. × tCK (avg),max.
+ tJIT (duty),min. + tJIT (duty),max.
11 tCH (abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the
following falling edge.
12 tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the
following rising edge.
Data Sheet E1248E40 (Ver. 4.0)
62
EDJ1108BABG, EDJ1116BABG
Block Diagram
CK
/CK
CKE
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
Address,
BA0, BA1, BA2
Row
address
buffer
and
Memory cell array
Bank 0
refresh
counter
Mode
register
Sense amp.
Column decoder
Column
address
buffer
and
/CS
/RAS
/CAS
/WE
burst
counter
Data control circuit
Latch circuit
DQS, /DQS
TDQS, /TDQS
CK, /CK
DLL
Input & Output buffer
ODT
DM
DQ
Data Sheet E1248E40 (Ver. 4.0)
63
EDJ1108BABG, EDJ1116BABG
Pin Function
CK, /CK (input pins)
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
/CS (input pin)
All commands are masked when /CS is registered high. /CS provides for external rank selection on systems with
multiple ranks. /CS is considered part of the command code.
/RAS, /CAS, /WE (input pins)
/RAS, /CAS and /WE (along with /CS) define the command being entered.
A0 to A13 (input pins)
Provided the row address for active commands and the column address for read/write commands to select one
location out of the memory array in the respective bank. (A10(AP) and A12(/BC) have additional functions, see
below) The address inputs also provide the op-code during mode register set commands.
[Address Pins Table]
Address (A0 to A13)
Part number
Page size
1KB
Row address (RA)
AX0 to AX13
Column address (CA)
AY0 to AY9
Note
1
EDJ1108BABG
EDJ1116BABG
2KB
AX0 to AX12
AY0 to AY9
Note: A13 pin is NC for x16 organization.
A10(AP) (input pin)
A10 is sampled during read/write commands to determine whether auto precharge should be performed to the
accessed bank after the read/write operation. (high: auto precharge; low: no auto precharge)
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = low)
or all banks (A10 = high). If only one bank is to be precharged, the bank is selected by bank addresses (BA).
A12(/BC) (input pin)
A12 is sampled during read and write commands to determine if burst chop (on-the-fly) will be performed.
(A12 = high: no burst chop, A12 = low: burst chopped.) See command truth table for details.
BA0 to BA2 (input pins)
BA0, BA1 and BA2 define to which bank an active, read, write or precharge command is being applied. BA0 and
BA1 also determine which mode register (MR0 to MR3) is to be accessed during a MRS cycle.
[Bank Select Signal Table]
BA0
L
BA1
L
BA2
L
Bank 0
Bank 1
H
L
L
L
Bank 2
H
H
L
L
Bank 3
H
L
L
Bank 4
H
H
H
H
Bank 5
H
L
L
Bank 6
H
H
Bank 7
H
Remark: H: VIH. L: VIL.
Data Sheet E1248E40 (Ver. 4.0)
64
EDJ1108BABG, EDJ1116BABG
CKE (input pin)
CKE high activates, and CKE low deactivates, internal clock signals and device input buffers and output drivers.
Taking CKE low provides precharge power-down and self-refresh operation (all banks idle), or active power-down
(row active in any bank). CKE is asynchronous for self-refresh exit. After VREF has become stable during the
power-on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper
self-refresh entry and exit, VREF must be maintained to this input. CKE must be maintained high throughout read
and write accesses. Input buffers, excluding CK, /CK, ODT and CKE are disabled during power-down. Input buffers,
excluding CKE, are disabled during self-refresh.
DM, DMU, DML (input pins)
DM is an input mask signal for write data. Input data is masked when DM is sampled high coincident with that input
data during a write access. DM is sampled on both edges of DQS. For ×8 configuration, the function of DM or
TDQS, /TDQS is enabled by mode register A11 setting in MR1.
DQ, DQU, DQL (input/output pins)
Bi-directional data bus.
DQS, /DQS, DQSU, /DQSU, DQSL, /DQSL (input/output pins)
Output with read data, input with write data. Edge-aligned with read data, center-aligned with write data.
The data strobe DQS is paired with differential signal /DQS to provide differential pair signaling to the system during
READs and WRITEs.
TDQS, /TDQS (output pins)
TDQS and /TDQS is applicable for ×8 configuration only. When enabled via mode register A11 = 1 in MR1, DRAM
will enable the same termination resistance function on TDQS, /TDQS as is applied to DQS, /DQS. When disabled
via mode register A11 = 0 in MR1, DM/TDQS will provide the data mask function and /TDQS is not used.
In ×16 configuration, the TDQS function must be disabled via mode register A11 = 0 in MR1.
/RESET (input pin)
/RESET is a CMOS rail to rail signal with DC high and low at 80% and 20% of VDD (1.20V for DC high and 0.30V
for DC low).
It is negative active signal (active low) and is referred to GND. There is no termination required on this signal. It will
be heavily loaded across multiple chips. /RESET is destructive to data contents.
ODT (input pins)
ODT (registered high) enables termination resistance internal to the DDR3 SDRAM. When enabled, ODT is only
applied to each DQ, DQS, /DQS, DM/TDQS, NU(/TDQS) (when TDQS is enabled via mode register A11 = 1 in MR1)
signal for ×4/×8 configuration. For ×16 configuration ODT is applied to each DQ, DQSU, /DQSU, DQSL, /DQSL,
DMU, and DML signal. The ODT pin will be ignored if the mode register (MR1) is programmed to disable ODT.
ZQ (supply)
Reference pin for ZQ calibration.
VDD, VSS, VDDQ, VSSQ (power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
VREFCA, VREFDQ (power supply)
Reference voltage
Data Sheet E1248E40 (Ver. 4.0)
65
EDJ1108BABG, EDJ1116BABG
Command Operation
Command Truth Table
The DDR3 SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE
Previous Current
BA0 to A12
A10
(AP)
Address
Function
Symbol cycle
cycle
/CS /RAS /CAS /WE BA2
(/BC)
Notes
Mode register set
Auto-refresh
MRS
REF
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
BA
V
op-code
H
H
V
V
V
V
V
V
Self-refresh entry
SELF
V
6, 8, 11
6, 7, 8,
11
Self-refresh exit
SREX
L
H
H
×
×
×
×
×
×
×
L
H
H
H
H
H
H
H
L
L
L
L
L
L
L
H
L
H
H
H
H
L
H
L
L
H
L
L
L
V
V
V
L
V
V
V
Single bank precharge
Precharge all banks
Bank activate
PRE
H
H
H
H
H
H
BA
V
V
PALL
ACT
L
V
H
L
BA
BA
BA
BA
RA
V
12
Write (Fixed BL)
WRIT
WRS4
WRS8
H
H
H
L
L
L
CA
CA
CA
Write (BC4, on the fly)
L
L
Write (BL8, on the fly)
L
H
Write with auto precharge
(Fixed BL)
Write with auto precharge
(BC4, on the fly)
Write with auto precharge
(BL8, on the fly)
WRITA
WRAS4
WRAS8
H
H
H
H
H
H
L
L
L
H
H
H
L
L
L
L
L
L
BA
BA
BA
V
L
H
H
H
CA
CA
CA
H
Read (Fixed BL)
READ
RDS4
RDS8
H
H
H
H
H
H
L
L
L
H
H
H
L
L
L
H
H
H
BA
BA
BA
V
L
L
L
L
CA
CA
CA
Read (BC4, on the fly)
Read (BL8, on the fly)
H
Read with auto precharge
READA
RDAS4
RDAS8
H
H
H
H
H
H
L
L
L
H
H
H
L
L
L
H
H
H
BA
BA
BA
V
L
H
H
H
CA
CA
CA
(Fixed BL)
Read with auto precharge
(BC4, on the fly)
Read with auto precharge
(BL8, on the fly)
H
No operation
NOP
H
H
H
H
L
H
H
L
L
H
H
L
H
×
H
×
H
×
V
×
×
V
×
V
×
×
V
×
×
V
×
V
×
×
V
×
V
×
×
V
×
V
×
×
9
Device deselect
DESL
PDEN
10
Power-down mode entry
×
×
×
×
5, 11
L
H
×
H
×
H
×
V
×
Power-down mode exit
PDEX
H
H
H
H
H
L
5, 11
L
H
H
H
H
H
H
H
L
V
H
L
ZQ calibration long
ZQ calibration short
ZQCL
ZQCS
H
H
L
L
L
Remark: H = VIH. L = VIL. × = Don't care (defined or undefined (including floating around VREF)) logic level.
V = VIH or VIL (defined logic level).
BA = Bank addresses. RA = Row Address. CA = Column Address. /BC = Burst Chop.
Data Sheet E1248E40 (Ver. 4.0)
66
EDJ1108BABG, EDJ1116BABG
Notes: 1. All DDR3 commands are defined by states of /CS, /RAS, /CAS, /WE and CKE at the rising edge of the
clock. The most significant bit (MSB) of BA, RA, and CA are device density and configuration dependent.
2. /RESET is an active low asynchronous signal that must be driven high during normal operation
3. Bank Addresses (BA) determine which bank is to be operated upon. For MRS, BA selects an mode
register.
4. Burst READs or WRITEs cannot be terminated or interrupted and fixed/on the fly BL will be defined by
MRS.
5. The power-down mode does not perform any refresh operations.
6. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
7. Self-refresh exit is asynchronous.
8. VREF (Both VREFDQ and VREFCA) must be maintained during self-refresh operation.
9. The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a
wait state. The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any
unwanted commands between operations. A NOP command will not terminate a previous operation that is
still executing, such as a burst read or write cycle.
10. The DESL command performs the same function as a NOP command.
11. Refer to the CKE Truth Table for more detail with CKE transition.
12. No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by
dividing tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling
window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more
than three further activate commands may be issued in clock N+1 through N+9.
No Operation Command [NOP]
The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a wait state.
The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any unwanted commands
between operations. A NOP command will not terminate a previous operation that is still executing, such as a burst
read or write cycle.
The no operation (NOP) command is used to instruct the selected DDR3 SDRAM to perform a NOP (/CS low, /RAS,
/CAS, /WE high). This prevents unwanted commands from being registered during idle or wait states. Operations
already in progress are not affected.
Device Deselect Command [DESL]
The deselect function (/CS high) prevents new commands from being executed by the DDR3 SDRAM. The DDR3
SDRAM is effectively deselected. Operations already in progress are not affected.
Mode Register Set Command [MR0 to MR3]
The mode registers are loaded via row address inputs. See mode register descriptions in the Programming the
Mode Register section. The mode register set command can only be issued when all banks are idle, and a
subsequent executable command cannot be issued until tMRD is met.
Bank Activate Command [ACT]
This command is used to open (or activate) a row in a particular bank for a subsequent access. The values on the
BA inputs select the bank, and the address provided on row address inputs selects the row. This row remains active
(or open) for accesses until a precharge command is issued to that bank. A precharge command must be issued
before opening a different row in the same bank.
Note: No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by dividing
tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling window, if
(tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more than three further
activate commands may be issued in clock N+1 through N+9.
Data Sheet E1248E40 (Ver. 4.0)
67
EDJ1108BABG, EDJ1116BABG
Read Command [READ, RDS4, RDS8, READA, RDAS4, RDAS8]
The read command is used to initiate a burst read access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent
accesses.
Write Command [WRIT, WRS4, WRS8, WRITA, WRAS4, WRAS8]
The write command is used to initiate a burst write access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the write burst; if auto precharge is not selected, the row will remain open for subsequent
accesses. Input data appearing on the DQ is written to the memory array subject to the DM input logic level
appearing coincident with the data. If a given DM signal is registered low, the corresponding data will be written to
memory; if the DM signal is registered high, the corresponding data inputs will be ignored, and a write will not be
executed to that byte/column location.
Precharge Command [PRE, PALL]
The precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access a specified time (tRP) after the precharge command is issued.
Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be
precharged, inputs BA select the bank. Otherwise BA are treated as "Don't Care." Once a bank has been
precharged, it is in the idle state and must be activated prior to any read or write commands being issued to that
bank. A precharge command will be treated as a NOP if there is no open row in that bank (idle state), or if the
previously open row is already in the process of precharging.
Auto precharge Command [READA, WRITA]
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the read or write command is issued, then the auto precharge function is
engaged. During auto precharge, a read command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst.
(This timing is equal to the rising edge which is (AL* + BL/2) cycles later from the read with auto precharge
command.)
Auto precharge can also be implemented during write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The tRAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Note: AL (Additive Latency), refer to Posted /CAS description in the Register Definition section.
Auto-Refresh Command [REF]
Auto-refresh is used during normal operation of the DDR3 SDRAM and is analogous to /CAS-before-/RAS (CBR)
refresh in FPM/EDO DRAM. This command is nonpersistent, so it must be issued each time a refresh is required.
The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during an
auto-refresh command.
A maximum of eight auto-refresh commands can be posted to any given DDR3, meaning that the maximum absolute
interval between any auto-refresh command and the next auto-refresh command is 9 × tREFI. This maximum
absolute interval is to allow DDR3 output drivers and internal terminators to automatically recalibrate compensating
for voltage and temperature changes.
Data Sheet E1248E40 (Ver. 4.0)
68
EDJ1108BABG, EDJ1116BABG
Self-Refresh Command [SELF]
The self-refresh command can be used to retain data in the DDR3, even if the rest of the system is powered down.
When in the self-refresh mode, the DDR3 retains data without external clocking. The self-refresh command is
initiated like an auto-refresh command except CKE is disabled (low). The DLL is automatically disabled upon
entering self-refresh and is automatically enabled and reset upon exiting self-refresh. The active termination is also
disabled upon entering self-refresh and enabled upon exiting self-refresh. (512 clock cycles must then occur before
a read command can be issued). Input signals except CKE are "Don't Care" during self-refresh. The procedure for
exiting self-refresh requires a sequence of commands. First, CK and /CK must be stable prior to CKE going back
high. Once CKE is high, the DDR3 must have NOP commands issued for tXSDLL because time is required for the
completion of any internal refresh in progress. A simple algorithm for meeting both refresh, DLL requirements and
out-put calibration is to apply NOPs for 512 clock cycles before applying any other command to allow the DLL to lock
and the output drivers to recalibrate.
ZQ calibration Command [ZQCL, ZQCS]
ZQ calibration command (short or long) is used to calibrate DRAM RON and ODT values over PVT.
ZQ Calibration Long (ZQCL) command is used to perform the initial calibration during power-up initialization
sequence.
ZQ Calibration Short (ZQCS) command is used to perform periodic calibrations to account for VT variations.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh.
Data Sheet E1248E40 (Ver. 4.0)
69
EDJ1108BABG, EDJ1116BABG
CKE Truth Table
CKE
Previous
Current
Command (n)*3
/CS, /RAS, /CAS, /WE Operation (n)*3
Current state*2
Power-down
cycle (n-1)*1 cycle (n)*1
Notes
L
L
H
L
H
L
L
L
L
L
L
L
×
Maintain power-down
14, 15
L
DESL or NOP
×
Power-down exit
11, 14
Self-refresh
L
Maintain self-refresh
Self-refresh exit
15, 16
L
DESL or NOP
DESL or NOP
DESL or NOP
DESL or NOP
DESL or NOP
DESL or NOP
DESL or NOP
REFRESH
8, 12, 16
11, 13, 14
Bank Active
Reading
H
H
H
H
H
H
H
Active power-down entry
Power-down entry
11, 13, 14, 17
11, 13, 14, 17
Writing
Power-down entry
11, 13, 14, 17
Precharging
Refreshing
All banks idle
Power-down entry
Precharge power-down entry
Precharge power-down entry
Self-refresh entry
11
11, 13, 14, 18
9, 13, 18
Any state other than
listed above
H
H
Refer to the Command Truth Table
10
Remark: H = VIH. L = VIL. × = Don’t care
Notes: 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n−1) is the state of CKE at the previous clock
edge.
2. Current state is the state of the DDR3 SDRAM immediately prior to clock edge n.
3. Command (n) is the command registered at clock edge n, and operation (n) is a result of Command (n).
ODT is not included here.
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this
document.
5. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
6. CKE must be registered with the same value on tCKE (min.) consecutive positive clock edges. CKE must
remain at the valid input level the entire time it takes to achieve the tCKE (min.) clocks of registration.
Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS +
tCKE (min.) + tIH.
7. DESL and NOP are defined in the Command Truth Table.
8. On self-refresh exit, DESL or NOP commands must be issued on every clock edge occurring during the
tXS period. Read or ODT command may be issued only after tXSDLL is satisfied.
9. Self-refresh mode can only be entered from the all banks idle state.
10. Must be a legal command as defined in the Command Truth Table.
11. Valid commands for power-down entry and exit are NOP and DESL only.
12. Valid commands for self-refresh exit are NOP and DESL only.
13. Self-refresh can not be entered while read or write operations, (extended) mode register set operations or
precharge operations are in progress. See section Power-Down and self-refresh Command for a detailed
list of restrictions.
14. The power-down does not perform any refresh operations.
15. “×” means “don’t care” (including floating around VREF) in self-refresh and power-down. It also applies to
address pins.
16. VREF (Both VREFDQ and VREFCA) must be maintained during self-refresh operation.
17. If all banks are closed at the conclusion of the read, write or precharge command, the precharge power-
down is entered, otherwise active power-down is entered.
18. Idle state means that all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress. CKE
is high and all timings from previous operation are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS,
etc.) as well as all self-refresh exit and power-down exit parameters are satisfied (tXS, tXP, tXPDLL, etc).
Data Sheet E1248E40 (Ver. 4.0)
70
EDJ1108BABG, EDJ1116BABG
Simplified State Diagram
CKE_L
MRS, MPR,
WRITE
LEVELING
POWER
SELF
REFRESH
APPLIED
POWER
ON
RESET
PROCEDURE
INITIALIZATION
SELF
MRS
SELFX
ZQCL
ZQCS
FROM ANY
STATE
RESET
REF
ZQ
REFRESHING
IDLE
CALIBRATION
PDEN
ACT
PDEX
ACTIVE
POWER
DOWN
ACTIVATING
PRECHARGE
POWER
DOWN
CKE_L
PDEX
CKE_L
PDEN
WRIT
BANK
ACTIVE
READ
WRIT
READ
READA
WRITA
WRIT
READ
WRITING
READING
READA
WRITA
WRITA
READA
PRE, PALL
WRITING
READING
PRE, PALL
PRE, PALL
PRECHARGING
Automatic sequence
Command sequence
Data Sheet E1248E40 (Ver. 4.0)
71
EDJ1108BABG, EDJ1116BABG
RESET and Initialization Procedure
Power-Up and Initialization Sequence
1. Apply power (/RESET is recommended to be maintained below 0.2 × VDD, (all other inputs may be undefined). )
/RESET needs to be maintained for minimum 200µs with stable power. CKE is pulled low anytime before
/RESET being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDD (min.) must
be no greater than 200ms; and during the ramp, VDD > VDDQ and (VDD − VDDQ) < 0.3V.
• VDD and VDDQ are driven from a single power converter output
AND
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side. In addition, VTT is limited to
0.95V max once power ramp is finished,
AND
• VREF tracks VDDQ/2.
OR
• Apply VDD without any slope reversal before or at the same time as VDDQ.
• Apply VDDQ without any slope reversal before or at the same time as VTT and VREF.
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side.
2. After /RESET is de-asserted, wait for another 500µs until CKE become active. During this time, the DRAM will
start internal state initialization; this will be done independently of external clocks.
3. Clocks (CK, /CK) need to be started and stabilized for at least 10ns or 5tCK (which is larger) before CKE goes
active. Since CKE is a synchronous signal, the corresponding set up time to clock (tIS) must be met. Also a NOP
or DESL command must be registered (with tIS set up time to clock) before CKE goes active. Once the CKE
registered “high” after Reset, CKE needs to be continuously registered high until the initialization sequence is
finished, including expiration of tDLLK and tZQinit.
4. The DDR3 SDRAM will keep its on-die termination in high-impedance state during /RESET being asserted at
least until CKE being registered high. Therefore, the ODT signal may be in undefined state until tIS before CKE
being registered high. After that, the ODT signal must be kept inactive (low) until the power-up and initialization
sequence is finished, including expiration of tDLLK and tZQinit.
5. After CKE being registered high, wait minimum of tXPR, before issuing the first MRS command to load mode
register. (tXPR = max. (tXS ; 5 × tCK)
6. Issue MRS command to load MR2 with all application settings. (To issue MRS command for MR2, provide low to
BA0 and BA2, high to BA1.)
7. Issue MRS command to load MR3 with all application settings. (To issue MRS command for MR3, provide low to
BA2, high to BA0 and BA1.)
8. Issue MRS command to load MR1 with all application settings and DLL enabled. (To issue DLL Enable
command, provide low to A0, high to BA0 and low to BA1 and BA2).
9. Issue MRS command to load MR0 with all application settings and DLL reset. (To issue DLL reset command,
provide high to A8 and low to BA0 to BA2).
10.Issue ZQCL command to start ZQ calibration.
11.Wait for both tDLLK and tZQinit completed.
12.The DDR3 SDRAM is now ready for normal operation.
Data Sheet E1248E40 (Ver. 4.0)
72
EDJ1108BABG, EDJ1116BABG
Ta
Tb
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
CK, /CK
VDD, VDDQ
/RESET
tCKSRX
max. (10 ns; 5tCK)
200 s
500 s
tIS
10ns
CKE
2
*
tDLLK
ZQcal
tXPR
tIS
tMRD
tMRD
MRS
MR3
tMRD
tMOD
tZQinit
Command
BA
1
MRS
MR2
MRS
MR1
MRS
MR0
*
tIS
ODT
DRAM_RTT
Notes: 1. From time point "Td" until "Tk", NOP or DESL commands must be
applied between MRS and ZQcal commands.
2. tXPR = max. (tXS; 5tCK)
: VIH or VIL
Reset and Initialization Sequence at Power-On Ramping
Reset and Initialization with Stable Power
The following sequence is required for /RESET at no power interruption initialization.
1. Assert /RESET below 0.2 × VDD anytime when reset is needed (all other inputs may be undefined). /RESET
needs to be maintained for minimum 100ns. CKE is pulled low before /RESET being de-asserted (minimum time
10ns).
2. Follow Power-Up Initialization Sequence steps 2 to 12.
3. The reset sequence is now completed; DDR3 SDRAM is ready for normal operation.
Ta
Tb
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
CK, /CK
VDD, VDDQ
/RESET
tCKSRX
max. (10 ns; 5tCK)
100ns
500 s
tIS
10ns
CKE
2
*
tDLLK
ZQCL
tXPR
tIS
tMRD
tMRD
MRS
MR3
tMRD
tMOD
tZQinit
Command
BA
1
MRS
MR2
MRS
MR1
MRS
MR0
*
tIS
ODT
DRAM_RTT
Notes: 1. From time point "Td" until"Tk", NOP or DESL commands must be
applied between MRS and ZQCL commands.
2. tXPR = max. (tXS; 5tCK)
: VIH or VIL
Reset Procedure at Power Stable Condition
Data Sheet E1248E40 (Ver. 4.0)
73
EDJ1108BABG, EDJ1116BABG
Programming the Mode Register
For application flexibility, various functions, features and modes are programmable in four mode registers, provided
by the DDR3 SDRAM, as user defined variables, and they must be programmed via a Mode Register Set (MRS)
command. As the default values of the Mode Registers (MR#) are not defined, content of mode registers must be
fully initialized and/or re-initialized, i.e. written, after Power-up and/or reset for proper operation. Also the contents of
the mode registers can be altered by re-executing the MRS command during normal operation. When programming
the mode registers, even if the user chooses to modify only a sub-set of the MRS fields, all address fields within the
accessed mode register must be redefined when the MRS command is issued. MRS command and DLL Reset
does not affect array contents, which means these commands can be executed any time after power-up without
affecting the array contents.
The mode register set command cycle time, tMRD is required to complete the write operation to the mode register
and is the minimum time required between two MRS commands. The MRS command to non-MRS command delay,
tMOD, is required for the DRAM to update the features except DLL reset and is the minimum time required from an
MRS command to a non-MRS command excluding NOP and DESL. The mode register contents can be changed
using the same command and timing requirements during normal operation as long as the DRAM is in idle state, i.e.
all banks are in the precharged state with tRP satisfied, all data bursts are completed and CKE is already high prior
to writing into the mode register. The mode registers are divided into various fields depending on the functionality
and/or modes.
Mode Register Set Command Cycle Time (tMRD)
tMRD is the minimum time required from an MRS command to the next MRS command. As DLL enable and DLL
reset are both MRS commands, tMRD is applicable between MRS to MR1 for DLL enable and MRS to MR0 for DLL
reset, and not tMOD.
/CK
CK
Command
MRS
NOP
MRS
NOP
tMRD
tMRD Timing
MRS Command to Non-MRS Command Delay (tMOD)
tMOD is the minimum time required from an MRS command to a non-MRS command excluding NOP and DESL.
Note that additional restrictions may apply, for example, MRS to MR0 for DLL reset followed by read.
/CK
CK
Command
MRS
NOP
non-MRS
NOP
tMOD
Old
setting
Updating
New Setting
tMOD Timing
Data Sheet E1248E40 (Ver. 4.0)
74
EDJ1108BABG, EDJ1116BABG
DDR3 SDRAM Mode Register 0 [MR0]
The mode register MR0 stores the data for controlling various operating modes of DDR3 SDRAM.
It controls burst length, read burst type, /CAS latency, test mode, DLL reset, WR and DLL control for precharge
power-down, which include various vendor specific options to make DDR3 SDRAM useful for various applications.
The mode register is written by asserting low on /CS, /RAS, /CAS, /WE, BA0 and BA1, while controlling the states of
address pins according to the table below.
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address field
0*1
0
0
0*1 PPD
WR
DLL TM /CAS latency RBT CL
BL
Mode register 0
Burst length
A8
0
DLL reset
No
A7
0
Mode
Normal
Test
A3 Read burst type
A1
0
BL
8 (Fixed)
A0
0
0
1
Nibble sequential
Interleave
1
Yes
1
0
4 or 8 (on the fly)
4 (Fixed)
1
BA1 BA0
MRS mode
MR0
1
0
0
0
1
1
0
1
0
1
1
Reserved
1
Write recovery for autoprecharge
/CAS latency
MR1
A11 A10 A9
WR
A6
0
A5
0
A4
0
A2
Latency
MR2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved
0
0
0
0
0
0
0
0
Reserved
MR3
2
5*
6*
7*
8*
0
0
1
5
2
2
2
0
1
0
6
A12 DLL Control for Precharge PD
0
1
1
7
0
1
Slow exit (DLL off)
Fast exit (DLL on)
1
0
0
8
2
10
12
*
1
0
1
9
10
2
*
1
1
0
Reserved
1
1
1
Reserved
Notes: 1. BA2 and A13 are reserved for future use and must be programmed to 0 during MRS.
2. WR (min.) (Write Recovery for autoprecharge) is determined by tCK (max.) and WR (max.) is determined by tCK (min.).
WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up to the next integer
(WR (min.) [cycles] = roundup tWR (ns) / tCK (ns)).
(The WR value in the mode register must be programmed to be equal or larger than WR (min.)
This is also used with tRP to determine tDAL.
MR0 Programming
Data Sheet E1248E40 (Ver. 4.0)
75
EDJ1108BABG, EDJ1116BABG
DDR3 SDRAM Mode Register 1 [MR1]
The Mode Register MR1 stores the data for enabling or disabling the DLL, output driver strength, RTT_Nom
impedance, additive latency, write leveling enable, TDQS enable and Qoff. The Mode Register 1 is written by
asserting low on /CS, /RAS, /CAS, /WE, high on BA0 and low on BA1, while controlling the states of address pins
according to the table below
MR1 Programming
Data Sheet E1248E40 (Ver. 4.0)
76
EDJ1108BABG, EDJ1116BABG
DDR3 SDRAM Mode Register 2 [MR2]
The Mode Register MR2 stores the data for controlling refresh related features, RTT_WR impedance and /CAS write
latency (CWL). The Mode Register 2 is written by asserting low on /CS, /RAS, /CAS, /WE, high on BA1 and low on
BA0, while con-trolling the states of address pins according to the table below.
MR2 Programming
Data Sheet E1248E40 (Ver. 4.0)
77
EDJ1108BABG, EDJ1116BABG
DDR3 SDRAM Mode Register 3 [MR3]
The Mode Register MR3 controls Multi Purpose Registers (MPR). The Mode Register 3 is written by asserting low
on /CS, /RAS, /CAS, /WE, high on BA1 and BA0, while controlling the states of address pins according to the table
below.
Address field
BA2 BA1 BA0 A13 A12 A11 A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Mode register 3
0*1
0*1
1
1
MPR MPR Loc
MPR Address
A1 A0
MPR location
2
MPR Operation
A2
0
0
1
1
0
1
0
1
Predefined pattern*
MPR
RFU
RFU
RFU
3
Normal operation
*
0
1
Data flow from MPR
N
otes : 1. BA2,A3 toA13 are reserved for future use (RFU) and must be programmed to 0 during MRS.
2. The predefined pattern will be used for read synchronization.
3 . When MPR control is set for normal operation, MR3 A[2]=0, MR3 A[1:0] will be ignored.
MR3 Programming
Data Sheet E1248E40 (Ver. 4.0)
78
EDJ1108BABG, EDJ1116BABG
Burst Length (MR0)
Read and write accesses to the DDR3 are burst oriented, with the burst length being programmable, as shown in the
figure MR0 Programming. The burst length determines the maximum number of column locations that can be
accessed for a given read or write command. Burst length options include fixed BC4, fixed BL8, and on the fly which
allows BC4 or BL8 to be selected coincident with the registration of a read on write command Via A12 (/BC).
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
Burst Chop
In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than
for the BL8 mode. This means that the starting point for tWR and tWTR will be pulled in by two clocks. In case of
burst length being selected on the fly via A12(/BC), the internal write operation starts at the same point in time like a
burst of 8 write operation. This means that during on-the-fly control, the starting point for tWR and tWTR will not be
pulled in by two clocks.
Burst Type (MR0)
[Burst Length and Sequence]
Starting address
(A2, A1, A0)
Sequential addressing
(decimal)
Interleave addressing
(decimal)
Burst length
Operation
READ
4 (burst chop)
000
001
010
011
100
101
110
111
0VV
1VV
000
001
010
011
100
101
110
111
VVV
0, 1, 2, 3, T, T, T, T
1, 2, 3, 0, T, T, T, T
2, 3, 0, 1, T, T, T, T
3, 0, 1, 2, T, T, T, T
4, 5, 6, 7, T, T, T, T
5, 6, 7, 4, T, T, T, T
6, 7, 4, 5, T, T, T, T
7, 4, 5, 6, T, T, T, T
0, 1, 2, 3, X, X, X, X
4, 5, 6, 7, X, X, X, X
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 0, 5, 6, 7, 4
2, 3, 0, 1, 6, 7, 4, 5
3, 0, 1, 2, 7, 4, 5, 6
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 4, 1, 2, 3, 0
6, 7, 4, 5, 2, 3, 0, 1
7, 4, 5, 6, 3, 0, 1, 2
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, T, T, T, T
1, 0, 3, 2, T, T, T, T
2, 3, 0, 1, T, T, T, T
3, 2, 1, 0, T, T, T, T
4, 5, 6, 7, T, T, T, T
5, 4, 7, 6, T, T, T, T
6, 7, 4, 5, T, T, T, T
7, 6, 5, 4, T, T, T, T
0, 1, 2, 3, X, X, X, X
4, 5, 6, 7, X, X, X, X
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
WRITE
READ
8
WRITE
Remark: T: Output driver for data and strobes are in high impedance.
V: a valid logic level (0 or 1), but respective buffer input ignores level on input pins.
X: Don’t Care.
Notes: 1. Page length is a function of I/O organization and column addressing
2. 0...7 bit number is value of CA [2:0] that causes this bit to be the first read during a burst.
Data Sheet E1248E40 (Ver. 4.0)
79
EDJ1108BABG, EDJ1116BABG
DLL Enable (MR1)
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and upon
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering self-
refresh operation and is automatically re-enabled upon exit of self-refresh operation. Any time the DLL is enabled
and subsequently reset, tDLLK clock cycles must occur before a read or synchronous ODT command can be issued
to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to
occur may result in a violation of the tDQSCK, tAON or tAOF parameters. During tDLLK, CKE must continuously be
registered high.
DDR3 SDRAM does not require DLL for any write operation. DDR3 does not require DLL to be locked prior to any
write operation. DDR3 requires DLL to be locked only for read operation and to achieve synchronous ODT timing.
DLL-off Mode
DDR3 DLL-off mode is entered by setting MR1 bit A0 to 1; this will disable the DLL for subsequent operations until
A0 bit set back to 0. The MR1 A0 bit for DLL control can be switched either during initialization or later.
The DLL-off mode operations listed below are an optional feature for DDR3. The maximum clock frequency for DLL-
off mode is specified by the parameter tCKDLL_OFF. There is no minimum frequency limit besides the need to
satisfy the refresh interval, tREFI.
Due to latency counter and timing restrictions, only one value of /CAS Latency (CL) in MR0 and CAS Write Latency
(CWL) in MR2 are supported. The DLL-off mode is only required to support setting of both CL = 6 and CWL = 6.
DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK) but not the Data Strobe to Data
relationship (tDQSQ, tQH, tQHS). Special attention is needed to line up Read data to controller time domain.
Comparing with DLL-on mode, where tDQSCK starts from the rising clock edge (AL + CL) cycles after the Read
command, the DLL-off mode tDQSCK starts (AL + CL − 1) cycles after the read command. Another difference is that
tDQSCK may not be small compared to tCK (it might even be larger than tCK) and the difference between tDQSCK
(min.). and tDQSCK (max.) is significantly larger than in DLL-on mode.
The timing relations on DLL-off mode READ operation are shown at following Timing Diagram (CL = 6, BL8):
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CK, /CK
Command
READ
A
BA
DQSdiff_DLL-on
RL = AL + CL = 6 (CL = 6, AL = 0)
CL = 6
DQ_DLL-on
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
RL (DLL-off) = AL + (CL - 1) = 5
tDQSCK(DLL-off)_min
DQSdiff_DLL-off
DQ_DLL-off
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
tDQSCK(DLL-off)_max
DQSdiff_DLL-off
DQ_DLL-off
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
DLL-Off Mode Read Timing Operation
Data Sheet E1248E40 (Ver. 4.0)
80
EDJ1108BABG, EDJ1116BABG
DLL on/off switching procedure
DDR3 DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operations until
A0 bit set back to “0”.
DLL “on” to DLL “off” Procedure
To switch from DLL “on” to DLL “off” requires the frequency to be changed during self-refresh outlined in the
following procedure:
1. Starting from Idle state (all banks pre-charged, all timings fulfilled, and DRAMs On-die Termination resistors,
RTT, must be in high impedance state before MRS to MR1 to disable the DLL.)
2. Set MR1 Bit A0 to “1” to disable the DLL.
3. Wait tMOD.
4. Enter self-refresh mode; wait until (tCKSRE) satisfied.
5. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs. After stable clock, wait tCKSRX
before issuing SRX command.
7. Starting with the self-refresh exit command, CKE must continuously be registered high until all tMOD timings from
any MRS command are satisfied. In addition, if any ODT features were enabled in the mode registers when self-
refresh mode was entered, the ODT signal must continuously be registered low until all tMOD timings from any
MRS command are satisfied. If both ODT features were disabled in the mode registers when self-refresh mode
was entered, ODT signal can be registered low or high.
8. Wait tXS, then set Mode Registers with appropriate values (especially an update of CL, CWL and WR may be
necessary. A ZQCL command may also be issued after tXS).
9. Wait for tMOD, then DRAM is ready for next command.
Ta
Tb
Tc Tc+1Tc+2
Td
Te
Tf Tf+1 Tf+2
Tg Tg+1
Th
CK
/CK
tMOD
tCKSRE
tCKSRX
tXS
tMOD
MRS
SRE NOP
SRX
MRS
Valid
Command
CKE
tCKESR
ODT
Change Frequency
DLL Switch Sequence from DLL-on to DLL-off
Data Sheet E1248E40 (Ver. 4.0)
81
EDJ1108BABG, EDJ1116BABG
DLL “off” to DLL “on” Procedure
To Switch from DLL “off” to DLL “on” (with required frequency change) during Self-Refresh:
1. Starting from Idle state (all banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors (RTT)
must be in high impedance state before Self-Refresh mode is entered.)
2. Enter Self-refresh Mode, wait until tCKSRE satisfied.
3. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
4. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.
5. Starting with the self-refresh exit command, CKE must continuously be registered high until all tDLLK timing from
subsequent DLL Reset command is satisfied. In addition, if any ODT features were enabled in the mode
registers when Self-refresh mode was entered, the ODT signal must continuously be registered low until tDLLK
timings from subsequent DLL Reset command is satisfied. If both ODT features are disabled in the mode
registers when Self Refresh mode was entered, ODT signal can be registered low or high.
6. Wait tXS, then set MR1 bit A0 to “0” to enable the DLL.
7. Wait tMRD, then set MR0 bit A8 to “1” to start DLL Reset.
8. Wait tMRD, and then set Mode Registers with appropriate values (especially an update of CL, CWL and WR may
be necessary. After tMOD is satisfied from any proceeding MRS command, a ZQCL command may also be
issued during or after tDLLK.)
9. Wait for tMOD, and then DRAM is ready for next command (remember to wait tDLLK after DLL Reset before
applying command requiring a locked DLL!). In addition, wait also for tZQoper in case a ZQCL command was
issued.
Ta
Tb
Tc Tc+1Tc+2
Td
Te
Tf Tf+1Tf+2
Tg
CK
/CK
tCKSRE
tCKSRX
tDLLK
MRS
tXS
tMRD tMRD
SRE NOP
SRX
MRS
MRS
Valid
Command
CKE
tCKESR
ODTLoff + 1x tCK
ODT
Change Frequency
DLL Switch Sequence from DLL-Off to DLL-On
Data Sheet E1248E40 (Ver. 4.0)
82
EDJ1108BABG, EDJ1116BABG
Additive Latency (MR1)
A posted /CAS read or write command when issued is held for the time of the Additive Latency (AL) before it is
issued inside the device. The read or write posted /CAS command may be issued with or without auto precharge.
The Read Latency (RL) is controlled by the sum of AL and the /CAS latency (CL).
The value of AL is also added to compute the overall Write Latency (WL).
MRS (1) bits A4 and A3 are used to enable Additive latency.
MRS1
A4
0
A3
0
AL*
0 (posted CAS disabled)
CL − 1
0
1
1
0
CL − 2
1
1
Reserved
Note: AL has a value of CL − 1 or CL − 2 as per the CL value programmed in the /CAS latency MRS setting.
Data Sheet E1248E40 (Ver. 4.0)
83
EDJ1108BABG, EDJ1116BABG
Write Leveling (MR1)
For better signal integrity, DDR3 memory module adopts fly by topology for the commands, addresses, control
signals and clocks. The fly by topology has benefits for reducing number of stubs and their length but in other
aspect, causes flight time skew between clock and strobe at every DRAM on DIMM. It makes Controller hard to
maintain tDQSS, tDSS and tDSH specification. Therefore, the controller should support ’write leveling’ in DDR3
SDRAM to compensate the skew.
Write leveling is a scheme to adjust DQS to CK relationship by the controller, with a simple feedback provided by the
DRAM. The memory controller involved in the leveling must have adjustable delay setting on DQS to align the rising
edge of DQS with that of the clock at the DRAM pin. DRAM asynchronously feeds back CK, sampled with the rising
edge of DQS, through the DQ bus. The controller repeatedly delays DQS until a transition from 0 to 1 is detected.
The DQS delay established through this exercise would ensure tDQSS, tDSS and tDSH specification. A conceptual
timing of this scheme is shown as below.
diff_Clock
Source
diff_DQS
Destination
diff_Clock
diff_DQS
DQ
X
0
0
Push DQS to
capture 0-1 transition
DQ
X
1
1
Write leveling concept
DQS, /DQS driven by the controller during leveling mode must be terminated by the DRAM, based on the ranks
populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.
One or more data bits should carry the leveling feedback to the controller across the DRAM configurations, ×8 and
×16. On a ×16 device, both byte lanes should be leveled independently. Therefore, a separate feedback mechanism
should be available for each byte lane. The upper data bits should provide the feedback of the upper diff_DQS
(diff_DQSU) to clock relationship whereas the lower data bits would indicate the lower diff_DQS (diff_DQSL) to clock
relationship.
DRAM Setting for Write Leveling and DRAM Termination Function in That Mode
DRAM enters into Write leveling mode if A7 in MR1 set 1. And after finishing leveling, DRAM exits from write
leveling mode if A7 in MR1 set 0 (MR1 Setting Involved in the Leveling Procedure table).
Note that in write leveling mode, only DQS/DQS terminations are activated and deactivated via ODT pin, not like
normal operation (refer to the DRAM Termination Function in The Leveling Mode table)
[MR1 Setting Involved in the Leveling Procedure]
Function
MR1 bit
A7
Enable
Disable
Note
1
Write leveling enable
Output buffer mode (Qoff)
1
0
0
1
A12
Note: 1. Output buffer mode definition is consistent with DDR2
[DRAM Termination Function in The Leveling Mode]
ODT pin@DRAM
De-asserted
Asserted
DQS, /DQS termination
DQs termination
Off
On
Off
Off
Note: In Write Leveling Mode with its output buffer disabled (MR1 [bit7] = 1 with MR1 [bit12] = 1) all RTT_Nom
settings are allowed; in Write Leveling Mode with its output buffer enabled (MR1 [bit7] = 1 with MR1 [bit12] =
0) only RTT_Nom settings of RZQ/2, RZQ/4 and RZQ/6 are allowed.
Data Sheet E1248E40 (Ver. 4.0)
84
EDJ1108BABG, EDJ1116BABG
Write Leveling Procedure
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. Since the controller levelizes
rank at a time, the output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT
after tMOD, time at which DRAM is ready to accept the ODT signal.
Controller may drive DQS low and /DQS high after a delay of tWLDQSEN, at which time DRAM has applied on-die
termination on these signals. After tWLMRD, controller provides a single DQS, /DQS edge which is used by the
DRAM to sample CK driven from controller. tWLMRD timing is controller dependent.
DRAM samples CK status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after
tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read
strobes (DQS, /DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or
decrement DQS delay setting and launches the next DQS, /DQS pulse after some time, which is controller
dependent.
Once a 0 to 1 transition is detected, the controller locks DQS delay setting and write leveling is achieved for the
device. The below figure describes detailed timing diagram for overall procedure and the timing parameters are
shown in below figure.
T2
T1
tWLS
tWLS
tWLH
tWLH
NOP
5
*
CK
/CK
2
3
4
2
3
*
*
*
*
*
Command MRS
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tMOD
6
6
*
*
ODT
tDQSH (min.)
tDQSL (min.) tDQSH (min.) tDQSL (min.)
tWLDQSEN
diff_DQS*4
tWLOE
tWLO
tWLMRD
tWLO
All DQs,
Prime DQ*1
Remaining
DQs
Notes:1. DRAM has the option to drive leveling feedback on a prime DQ or all DQs. If feedback is driven only on one DQ,
the remaining DQs must be driven low as shown in above Figure, and maintained at this state through out
the leveling procedure.
2. MRS : Load MR1 to enter write leveling mode.
3. NOP : NOP or deselec
4. diff_DQS is the differential data strobe (DQS, /DQS). Timing reference points are the zero crossing. DQS is
shown with solid line, /DQS is shown with dotted line.
5. CK, /CK : CK is shown with solid dark line, where as /CK is drawn with dotted line.
6. DQS needs to fulfill minimum pulse width requirements tDQSH (min.) and tDQSL (min.) as defined for regular
writes; the max pulse width is system dependent.
Timing Details Write leveling Sequence
Data Sheet E1248E40 (Ver. 4.0)
85
EDJ1108BABG, EDJ1116BABG
Write Leveling Mode Exit
The following sequence describes how the Write Leveling Mode should be exited:
1. After the last rising strobe edge(see T111), stop driving the strobe signals (see ~T128). Note: From now on, DQ
pins are in undefined driving mode, and will remain undefined, until tMOD after the respective MR command
(T145).
2. Drive ODT pin low (tIS must be satisfied) and continue registering low (see T128).
3. After the RTT is switched off: disable Write Level Mode via MR command (see T132).
4. After tMOD is satisfied (T145), any valid commands may be registered. (MR commands may already be issued
after tMRD (T136).
T111
T112
T116
T117
T128 T131
T132
T136
MRS
T145
Valid
CK, /CK
Command
WL_off
1
tMOD
BA
Valid
VVaalidlid
tIS
tMRD
ODT
tODTL_off
RTT_DQS-/DQS
DQS-/DQS
RTT_DQ
tWLO + tWLOE
DQ
Result = 1
Timing Details Write leveling Exit
Data Sheet E1248E40 (Ver. 4.0)
86
EDJ1108BABG, EDJ1116BABG
TDQS, /TDQS function (MR1)
TDQS (Termination Data Strobe) is a feature of ×8 DDR3 SDRAM that provides additional termination resistance
outputs that may be useful in some system configurations.
TDQS is not supported in ×16 configurations. When enabled via the mode register, the same termination resistance
function is applied to the TDQS and /TDQS pins that are applied to the DQS and /DQS pins.
In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance function only. The
data strobe function of RDQS is not provided by TDQS.
The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is provided and the /TDQS pin is
not used. See Table TDQS, /TDQS function for details.
The TDQS function is available in ×8 DDR3 SDRAM only and must be disabled via the mode register A11 = 0 in
MR1 for ×16 configurations.
[TDQS, /TDQS function]
A11@MR1
TDQS enable
Disable
0
1
Enable
Notes: 1. If TDQS is enabled, the DM function is disabled.
2. When not used, TDQS function can be disabled to save termination power
3. TDQS function is only available for ×8 DRAM and must be disabled for ×16
[Function matrix]
A11@MR1 (TDQS enable)
DM/TDQS
DM
NU/ /TDQS
High-Z
0
1
TDQS
/TDQS
Data Sheet E1248E40 (Ver. 4.0)
87
EDJ1108BABG, EDJ1116BABG
Extended Temperature Usage (MR2)
[Mode Register Description]
Field Bits Description
Description
Auto self-refresh (ASR) (Optional)
when enabled, DDR3 SDRAM automatically
provides self-refresh power management functions
for all supported operating temperature values. If
not enabled, the SRT bit must be programmed to
indicate TC during subsequent self-refresh
operation
0
1
Manual SR Reference (SRT)
ASR
SRT
A6
A7
ASR enable (optional)
Self-Refresh Temperature (SRT) Range
If ASR = 0, the SRT bit must be programmed to
indicate TC during subsequent self-refresh
operation
0
1
Normal operating temperature range
Extended (optional) operating temperature range
If ASR = 1, SRT bit must be set to 0
Partial Array Self-Refresh (PASR)
Optional in DDR3 SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine
if DDR3 SDRAM devices support the following options or requirements referred to in this material. If PASR (Partial
Array Self-Refresh) is enabled, data located in areas of the array beyond the specified address range shown in
figure of MR2 programming will be lost if Self-Refresh is entered. Data integrity will be maintained if tREFI
conditions are met and no Self-Refresh command is issued.
/CAS Write Latency (CWL)
The /CAS Write Latency is defined by MR2 bits [A3, A5], as shown in figure of MR2 programming. /CAS Write
Latency is the delay, in clock cycles, between the internal Write command and the availability of the first bit of input
data. DDR3 SDRAM does not support any half-clock latencies. The overall Write Latency (WL) is defined as
Additive Latency (AL) + /CAS Write Latency (CWL); WL = AL + CWL. For more information on the sup-ported CWL
and AL settings based on the operating clock frequency, refer to “Standard Speed Bins”. For detailed Write operation
refer to “WRITE Operation”.
Auto Self-Refresh Mode - ASR Mode (optional)
DDR3 SDRAM provides an Auto Self-Refresh mode (ASR) for application ease. ASR mode is enabled by setting
MR2 bit A6 = 1 and MR2 bit A7 = 0. The DRAM will manage self-refresh entry in either the Normal or Extended
(optional) Temperature Ranges. In this mode, the DRAM will also manage self-refresh power consumption when the
DRAM operating temperature changes, lower at low temperatures and higher at high temperatures.
If the ASR option is not supported by the DRAM, MR2 bit A6 must be set to 0.
If the ASR mode is not enabled (MR2 bit A6 = 0), the SRT bit (MR2 A7) must be manually programmed with the
operating temperature range required during self-refresh operation.
Support of the ASR option does not automatically imply support of the Extended Temperature Range.
Self- Refresh Temperature Range - SRT (optional)
If ASR = 0, the Self-Refresh Temperature (SRT) Range bit must be programmed to guarantee proper self-refresh
operation. If SRT = 0, then the DRAM will set an appropriate refresh rate for self-refresh operation in the Normal
Temperature Range. If SRT = 1 then the DRAM will set an appropriate, potentially different, refresh rate to allow
self-refresh operation in either the Normal or Extended Temperature Ranges. The value of the SRT bit can effect
self-refresh power consumption, please refer to the IDD table for details.
For parts that do not support the Extended Temperature Range, MR2 bit A7 must be set to 0 and the DRAM should
not be operated outside the Normal Temperature Range.
Data Sheet E1248E40 (Ver. 4.0)
88
EDJ1108BABG, EDJ1116BABG
[Self-Refresh Mode Summary]
MR2
Allowed operating temperature range
for self-refresh mode
A6
0
A7
0
Self-refresh operation
Self-refresh rate appropriate for the Normal Temperature Range
Normal (0°C to +85°C)
Self-refresh rate appropriate for either the Normal or Extended
Temperature Ranges. The DRAM must support Extended
Temperature Range. The value of the SRT bit can effect self-
refresh power consumption, please refer to the Self- refresh
Current for details.
ASR enabled (for devices supporting ASR and Normal
Temperature Range). Self-refresh power consumption is
temperature dependent
0
1
1
0
Normal and Extended (0°C to +95°C)
Normal (0°C to +85°C)
ASR enabled (for devices supporting ASR and Extended
Temperature Range). Self-refresh power consumption is
temperature dependent
1
1
0
1
Normal and Extended (0°C to +95°C)
Illegal
Dynamic ODT (Rtt_WR)
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal
integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command. MR2 register locations A9 and A10 configure the Dynamic ODT settings. In Write
leveling mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.
Data Sheet E1248E40 (Ver. 4.0)
89
EDJ1108BABG, EDJ1116BABG
Multi Purpose Register (MR3)
The Multi Purpose Register (MPR) function is used to read out predefined system timing calibration bit sequence.
Conceptual Block Diagram of Multi Purpose Register
To enable the MPR, a mode register set (MRS) command must be issued to MR3 register with bit A2 = 1. Prior to
issuing the MRS command, all banks must be in the idle state (all banks precharged and tRP/tRPA met). Once the
MPR is enabled, any subsequent READ or READA commands will be redirected to the multi purpose register. The
resulting operation when a READ or READA command is issued is defined by MR3 bits [A1: A0] when the MPR is
enabled. When the MPR is enabled, only READ or READA commands are allowed until a subsequent MRS
command is issued with the MPR disabled (MR3 bit A2=0). Power-down mode, self-refresh, and any other non-
READ/READA command are not allowed during MPR enable mode. The /RESET function is supported during MPR
enable mode.
[Functional Description of MR3 Bits for MPR]
MR3
A2
A [1:0]
MPR
MPR-Loc
Function
Notes
1
Normal operation, no MPR transaction.
All subsequent reads will come from DRAM array.
All subsequent WRITEs will go to DRAM array.
Enable MPR mode, subsequent READ/READA commands defined by MR3 A [1:0]
bits.
Don’t care
(0 or 1)
0
1
MR3 A [1:0]
Note: 1. See Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register table
Data Sheet E1248E40 (Ver. 4.0)
90
EDJ1108BABG, EDJ1116BABG
One bit wide logical interface via all DQ pins during READ operation
Register Read on ×8:
DQ [0] drives information from MPR.
DQ [7:1] either drive the same information as DQ [0], or they drive 0.
Register Read on ×16:
DQL [0] and DQU [0] drive information from MPR.
DQL [7:1] and DQU [7:1] either drive the same information as DQL [0], or they drive 0.
Note: A standardization of which DQ is used by DDR3 SDRAM for MPR reads is strongly recommended to ensure
functionality also for AMB2 on DDR3 FB-DIMM.
• Addressing during Multi Purpose Register reads for all MPR agents:
BA [2:0]: don’t care.
A [1:0]: A [1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
A [2]:
For BL8, A [2] must be equal to 0.
Burst order is fixed to [0,1,2,3,4,5,6,7] *1
For Burst Chop 4 cases, the burst order is switched on nibble base
A [2] = 0, Burst order: 0,1,2,3 *1
A [2] = 1, Burst order: 4,5,6,7 *1
A [9:3]: don’t care
A10(AP): don’t care
A12(/BC): Selects burst chop mode on-the-fly, if enabled within MR0
A11: don’t care
• Regular interface functionality during register reads:
Support two burst ordering which are switched with A2 and A [1:0] = 00.
Support of read burst chop (MRS and on-the-fly via A12(/BC).
All other address bits (remaining column address bits including A10, all bank address bits) will be ignored
by the DDR3 SDRAM.
Regular read latencies and AC timings apply.
DLL must be locked prior to MPR Reads.
Note: Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
Data Sheet E1248E40 (Ver. 4.0)
91
EDJ1108BABG, EDJ1116BABG
Functional Block Diagrams
Figures below provide functional block diagrams for the multi purpose register in ×8 and ×16 DDR3 SDRAM.
Memory Array
8×8
8×8
64
Copy to
DQ[7:0]
DQ[7:0]
8
Q
Read Path
DQS
MPR
/DQS
DM
ByteLane
Functional Block Diagram of Multi Purpose Register in ×8 DDR3 SDRAM
Data Sheet E1248E40 (Ver. 4.0)
92
EDJ1108BABG, EDJ1116BABG
Memory Array
DQU[7:0]
8×8
Read Path
DQSU
/DQSU
8×8
8×8
64
DMU
ByteLaneUpper
Copy to
DQU[7:0]
8
8×8
8×8
64
Copy to
DQL[7:0]
DQL[7:0]
8
Q
Read Path
DQSL
MPR
/DQSL
DML
ByteLaneLower
Functional Block Diagram of Multi Purpose Register in ×16 DDR3 SDRAM
Data Sheet E1248E40 (Ver. 4.0)
93
EDJ1108BABG, EDJ1116BABG
Register Address Table
The table below provides an overview of the available data locations, how they are addressed by MR3 A [1:0] during
a MR0 to MR3, and how their individual bits are mapped into the burst order bits during a multi purpose register
read.
[Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register]
Read
MR3
A [2]
MR3
A [1:0]
Burst
Length
Function
Address Burst Order and Data Pattern
A [2:0]
Notes
Burst order 0,1,2,3,4,5,6,7
BL8
BC4
BC4
000
1
1
1
Pre-defined pattern [0,1,0,1,0,1,0,1]
Read predefined
pattern for
system
Burst order 0,1,2,3,
Pre-defined pattern [0,1,0,1]
Burst order 4,5,6,7
Pre-defined pattern [0,1,0,1]
1
00
000
calibration
100
BL8
BC4
BC4
BL8
BC4
BC4
BL8
BC4
BC4
000
000
100
000
000
100
000
000
100
Burst order 0,1,2,3,4,5,6,7
1
1
1
1
1
1
1
1
1
1
1
1
01
10
11
RFU
RFU
RFU
Burst order 0,1,2,3
Burst order 4,5,6,7
Burst order 0,1,2,3,4,5,6,7
Burst order 0,1,2,3
Burst order 4,5,6,7
Burst order 0,1,2,3,4,5,6,7
Burst order 0,1,2,3,
Burst order 4,5,6,7
Note: 1. Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
Relevant Timing Parameters
The following AC timing parameters are important for operating the Multi Purpose Register: tRP, tMRD, tMOD and
tMPRR.
Besides these timings, all other timing parameters needed for proper operation of the DDR3 SDRAM need to be
observed.
[MPR Recovery Time tMPRR]
Symbol
tMPRR
Description
Multi Purpose Register Recovery Time, defined between end of MPR read burst and MRS which
reloads MPR or disables MPR function
Data Sheet E1248E40 (Ver. 4.0)
94
EDJ1108BABG, EDJ1116BABG
Protocol Examples
Protocol Example: Read Out Predetermined Read-Calibration Pattern
Multiple reads from Multi Purpose Register, in order to do system level read timing calibration based on
predetermined and standardized pattern.
Protocol Steps:
• Precharge All
• Wait until tRP is satisfied
• MRS MR3, op-code “A2 = 1 “ and “A[1:0] = 00“
Redirect all subsequent reads into the Multi Purpose Register, and load Pre-defined pattern into MPR.
• Wait until tMRD and tMOD are satisfied (Multi Purpose Register is then ready to be read). During the period
MR3 A2 =1, no data write operation is allowed.
• Read:
A [1:0] = ‘00’ (Data burst order is fixed starting at nibble, always 00 here)
A [2] = ‘0’ (For BL8, burst order is fixed as 0,1,2,3,4,5,6,7)
A12(/BC) = 1 (use regular burst length of 8)
All other address pins (including BA [2:0] and A10(AP)): don’t care.
• After RL = AL + CL, DRAM bursts out the predefined Read Calibration Pattern.
• Memory controller repeats these calibration reads until read data capture at memory controller is optimized.
• After end of last MPR read burst wait until tMPRR is satisfied.
• MRS MR3, op-code “A2 = 0“ and “A[1:0] = valid data but value are don’t care“
All subsequent read and write accesses will be regular READs and WRITEs from/to the DRAM array.
• Wait until tMRD and tMOD are satisfied
• Continue with “regular” DRAM commands, like activate a memory bank for regular read or write access,
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T39
CK
/CK
tMRD
tMOD
1
*
Command
PALL
MRS
READ
MRS
tMPRR
NOP
tRP
NOP
NOP
NOP
tMOD
3
0
Valid
3
BA
2
*
0
0
Valid
A[1:0]
2
*
1
0
A[2]
00
Valid
Valid
Valid
00
A[9:3]
1
0
0
0
0
0
0
0
0
A10(AP)
A[11]
1
*
A12(/BC)
A[15:13]
Valid
Valid
DQS, /DQS
DQ
RL
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0]
VIH or VIL
MPR Readout of Predefined Pattern, BL8 fixed Burst Order, Single Readout
Data Sheet E1248E40 (Ver. 4.0)
95
EDJ1108BABG, EDJ1116BABG
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T43
CK
/CK
tMRD
tMOD
MRS
tMPRR
1
1
*
*
Command
PALL NOP MRS
tRP
NOP
READ
NOP
READ
NOP
NOP
tMOD
tCCD
BA
3
3
Valid
Valid
2
2
*
*
A[1:0]
A[2]
0
1
0
0
0
0
Valid
0
2
2
*
*
00
00
0
A[9:3]
Valid
Valid
Valid
Valid
Valid
Valid
1
0
0
0
0
A10, AP
A[11]
0
0
0
1
1
*
*
A12(/BC)
A[15:13]
Valid
Valid
Valid
Valid
DQS, /DQS
RL
RL
DQ
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0]
VIH or VIL
T43
MPR Readout of Predefined Pattern, BL8 Fixed Burst Order, Back-to-Back Readout
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22
T23 T24 T25 T26 T27 T28 T29 T30 T31
CK
/CK
tMRD
tMOD
1
1
*
*
Command
PALL NOP MRS
tRP
NOP
READ
READ
MRS
tMPRR
NOP
NOP
NOP
tMOD
tCCD
3
0
3
Valid
Valid
BA
A[1:0]
2
2
*
*
0
0
Valid
0
0
1
3
4
*
*
1
A[2]
00
00
0
Valid
Valid
Valid
Valid
Valid
Valid
A[9:3]
1
0
0
0
0
A10(AP)
A[11]
0
0
0
1
1
*
*
A12(/BC)
A[15:13]
Valid
Valid
Valid
Valid
DQS, /DQS
DQ
RL
RL
VIH or VIL
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
MPR Readout Predefined Pattern, BC4, Lower Nibble Then Upper Nibble
Data Sheet E1248E40 (Ver. 4.0)
96
EDJ1108BABG, EDJ1116BABG
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T43
CK, /CK
tMRD
tMOD
1
1
*
*
Command
PALL NOP MRS
tRP
NOP
READ
NOP
READ
MRS
tMPRR
NOP
NOP
tMOD
tCCD
3
0
3
Valid
0
Valid
Valid
BA
A[1:0]
2
*
2
*
0
1
0
0
4
*
3
*
1
A[2]
00
00
0
Valid
Valid
Valid
Valid
Valid
Valid
A[9:3]
1
0
0
0
0
A10, AP
A[11]
0
0
0
1
1
*
*
A12(/BC)
A[15:13]
Valid
Valid
Valid
Valid
DQS, /DQS
DQ
RL
RL
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
VIH or VIL
MPR Readout of Predefined Pattern, BC4, Upper Nibble Then Lower Nibble
Data Sheet E1248E40 (Ver. 4.0)
97
EDJ1108BABG, EDJ1116BABG
Operation of the DDR3 SDRAM
Read Timing Definition
Read timing is shown in the following Figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, /CK.
• tDQSCK is the actual position of a rising strobe edge relative to CK, /CK.
• tQSH describes the DQS, /DQS differential output high time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• tQSL describes the DQS, /DQS differential output low time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
/CK
CK
tDQSCK(min.)
tDQSCK(max.)
tDQSCK(min.)
tDQSCK(max.)
Rising Strobe
Region
Rising Strobe
Region
tDQSCK
tDQSCK
tQSL
tQSH
/DQS
DQS
tQH
tQH
tDQSQ
tDQSQ
Associated
DQ Pins
READ Timing Definition
Data Sheet E1248E40 (Ver. 4.0)
98
EDJ1108BABG, EDJ1116BABG
• CK, /CK crossing to DQS, /DQS crossing
• tDQSCK; rising edges only of CK and DQS
• tQSH; rising edges of DQS to falling edges of DQS
• tQSL; rising edges of / DQS to falling edges of /DQS
• tLZ (DQS), tHZ (DQS) for preamble/postamble (see tHZ (DQS), tLZ (DQS)
RL Measured to this point
CK
/CK
tDQSCK(min.)
tDQSCK(min.)
tDQSCK(min.)
tDQSCK(min.)
tLZ(DQS)(min.)
tQSL
tQSH
tRPRE
tRPST
DQS, /DQS
Early strobe
Bit0
Bit1
Bit2
Bit3
Bit4
Bit5
Bit6
Bit7
tDQSCK(max.)
tDQSCK(max.)
tQSL
tDQSCK(max.) tDQSCK(max.)
tLZ(DQS)(max.)
tHZ(DQS)(max.)
tQSH
tRPRE
tRPST
DQS, /DQS
Late strobe
Bit0
Bit1
Bit2
Bit3
Bit4
Bit5
Bit6
Bit7
Notes: Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min.) or tDQSCK(max.).
Instead, rising strobe edge can vary between tDQSCK(min.) or tDQSCK(max.) within a burst.
Likewise tLZ(DQS)(min.) and tHZ(DQS)(min.) are not tied to tDQSCK(min.) (early strobe case) and
tLZ(DQS)(max.) and tHZ(DQS)(max.) are not tied to tDQSCK(max.) (late strobe case).
The minimum pulse width of read preamble is defined by tRPRE(min.).
The minimum pulse width of read preamble is defined by tRPST(min.).
DDR3 Clock to Data Strobe Relationship
Data Sheet E1248E40 (Ver. 4.0)
99
EDJ1108BABG, EDJ1116BABG
• DQS, /DQS crossing to Data Output
• tDQSQ; both rising/falling edges of DQS, no tAC defined
T0
T4
T5
T6
T7
T8
T9
T10
/CK
CK
Command*3
READ
NOP
RL = AL + CL
Bank
Coln
Address*4
tRPRE
tQH
tQH
tRPST
DQS, /DQS
tDQSQ(max.)
tDQSQ(max.)
tLZ(DQ)(max.)
tHZ(DQ)(max.)
Dout Dout
n+1
Dout Dout
n+2 n+3
Dout Dout Dout Dout
n+4 n+5 n+6 n+7
DQ*2
n
tLZ(DQ)(min.)
(Last data valid)
Dout Dout
n+1
Dout Dout
n+2 n+3
Dout Dout Dout Dout
n+4 n+5 n+6 n+7
DQ*2
n
(First data no longer valid)
Dout
n
Dout
n+1
Dout
n+2
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
All DQS collectively
Data valid
Data valid
VIH or VIL
Notes: 1. BL8, RL = 5(AL = 0, CL = 5).
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] and A12 = 1 during READ command at T0.
5. Output timings are referenced to VDDQ/2, and DLL on for locking.
6. tDQSQ defines the skew between DQS, /DQS to data and does not define DQS, /DQS to clock.
7. Early data transitions may not always happen at the same DQ.
Data transitions of a DQ can vary(either early or late) within a busy.
DDR3 Data Strobe to Data Relationship
Data Sheet E1248E40 (Ver. 4.0)
100
EDJ1108BABG, EDJ1116BABG
tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes
tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to
a specific voltage level which specifies when the device output is no longer driving tHZ(DQS) and tHZ(DQ), or begins
driving tLZ(DQS), tLZ(DQ). The figure below shows a method to calculate the point when device is no longer driving
tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The
actual voltage measurement points are not critical as long as the calculation is consistent. The parameters
tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ) are defined as singled ended.
tLZ (DQS): CK-/CK rising crossing at RL-1
tLZ (DQ): CK-/CK rising crossing at RL
tHZ (DQS), tHZ (DQ) with BL8: CK-/CK rising crossing at RL + 4nCK
tHZ (DQS), tHZ (DQ) with BL4: CK-/CK rising crossing at RL + 2nCK
VTT + 2x mV
VOH − x mV
VOH − 2x mV
VTT + x mV
tLZ (DQS), tLZ (DQ)
tHZ (DQS), tHZ (DQ)
VTT − x mV
VOL + 2x mV
T1
T2
VTT − 2x mV
VOL + x mV
T2
T1
tLZ (DQS), tLZ (DQ) begin point = 2 T1 - T2
tHZ (DQS), tHZ (DQ) end point = 2 T1 - T2
Method for Calculating Transitions and Endpoints
Data Sheet E1248E40 (Ver. 4.0)
101
EDJ1108BABG, EDJ1116BABG
Read Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
The Burst Read command is initiated by having /CS and /CAS low while holding /RAS and /WE high at the rising
edge of the clock. The address inputs determine the starting column address for the burst. The delay from the start
of the command to when the data from the first cell appears on the outputs is equal to the value of the read latency
(RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data (DQ) is driven onto the data bus.
The first bit of the burst is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out
appears on the DQ pin in phase with the DQS signal in a source synchronous manner.
The RL is equal to an additive latency (AL) plus /CAS latency (CL). The CL is defined by the mode register 0 (MR0),
similar to the existing SDR and DDR-I SDRAMs. The AL is defined by the mode register 1
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command*3
Address*4
READ
NOP
Bank
Col n
tRPST
tRPRE
DQS, /DQS
DQ*2
Dout Dout Dout
n+1 n+2 n+3
Dout Dout Dout
n+5 n+6 n+7
Dout
n
Dout
n+4
CL = 5
RL = AL + CL
VIH or VIL
Notes: 1. BL8, AL = 0, RL = 5, CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Operation, RL = 5
Data Sheet E1248E40 (Ver. 4.0)
102
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
CK
/CK
Command*3
Address*4
READ
NOP
Bank
Col n
tRPST
tRPRE
DQS, /DQS*2
DQ
Dout Dout Dout Dout Dout Dout Dout Dout
n+1 n+2 n+3 n+4 n+5 n+6 n+7
n
AL = 4
CL = 5
RL = AL + CL
VIH or VIL
Notes: 1. BL8, RL = 9, AL = (CL − 1), CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Operation, RL = 9
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14
CK
/CK
Command*3
READ
READ
NOP
NOP
tCCD
Address*4
Bank
Col n
Bank
Col b
tRPST
tRPRE
DQS, /DQS
DQ*2
Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL = 5
RL = 5
VIH or VIL
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and T4.
READ (BL8) to READ (BL8)
Data Sheet E1248E40 (Ver. 4.0)
103
EDJ1108BABG, EDJ1116BABG
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14
CK
/CK
Command*3
Address*4
READ
READ
NOP
NOP
tCCD
Bank
Col b
Bank
Col n
tRPST
tRPST
tRPRE
tRPRE
DQS, /DQS
DQ*2
Dout Dout Dout Dout
Dout Dout Dout Dout
b+1 b+2 b+3
n
n+1 n+2 n+3
b
RL = 5
RL = 5
VIH or VIL
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and T4.
READ (BC4) to READ (BC4)
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14 T15
CK
/CK
Command*3
READ
WRIT
NOP
NOP
tWR
READ to WRIT command delay = RL + tCCD + 2tCK − WL
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
tRPRE
tRPST
tWPRE
tWPST
DQS, /DQS
DQ*2
Dout Dout Dout Dout Dout Dout Dout Dout
Din Din Din Din
Din Din Din Din
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL = 5
WL = 5
VIH or VIL
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and WRIT command T6.
READ (BL8) to WRITE (BL8)
Data Sheet E1248E40 (Ver. 4.0)
104
EDJ1108BABG, EDJ1116BABG
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14 T15
CK
/CK
Command*3
READ
WRIT
NOP
NOP
tWR
READ to WRIT Command delay = RL + tCCD/2 + 2tCK − WL
tBL = 4 clocks
tWTR
Bank
Col n
Bank
Col b
Address*4
tRPRE
tRPST
tWPRE
tWPST
DQS, /DQS
DQ*2
Dout Dout Dout Dout
n+1 n+2 n+3
Din Din Din Din
b+1 b+2 b+3
n
b
RL = 5
WL = 5
VIH or VIL
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and WRIT command T4.
READ (BC4) to WRITE (BC4) OTF
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14
CK
/CK
Command*3
READ
READ
NOP
NOP
tCCD
Bank
Col n
Bank
Col b
Address*4
tRPST
tRPRE
DQS, /DQS
DQ*2
Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3
RL = 5
RL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T4.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
READ (BL8) to READ (BC4) OTF
Data Sheet E1248E40 (Ver. 4.0)
105
EDJ1108BABG, EDJ1116BABG
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14
CK
/CK
Command*3
Address*4
READ
READ
NOP
NOP
tCCD
Bank
Col n
Bank
Col b
tRPST
tRPRE
tRPRE
tRPST
DQS, /DQS
DQ*2
Dout Dout Dout Dout
Dout Dout Dout Dout Dout Dout Dout Dout
b+1 b+2 b+3 b+4 b+5 b+6 b+7
n
n+1 n+2 n+3
b
RL = 5
RL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T4.
READ (BC4) to READ (BL8) OTF
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14 T15
CK
/CK
Command*3
READ
WRIT
NOP
NOP
tWR
tBL = 4 clocks
READ to WRIT command delay = RL + tCCD/2 + 2tCK − WL
tWTR
Address*4
Bank
Col n
Bank
Col b
tRPST
tWPST
tWPRE
tRPRE
DQS, /DQS
DQ*2
Dout Dout Dout Dout
n+1 n+2 n+3
Din Din Din Din
Din Din Din
Din
n
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL = 5
WL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n , Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
READ (BC4) to WRITE (BL8) OTF
Data Sheet E1248E40 (Ver. 4.0)
106
EDJ1108BABG, EDJ1116BABG
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14 T15
CK
/CK
Command*3
READ
WRIT
NOP
NOP
tWR
READ to WRIT command delay = RL + tCCD + 2tCK − WL
tBL = 4 clocks
tWTR
Bank
Col n
Bank
Col b
Address*4
tRPRE
tRPST
tWPRE
tWPST
DQS, /DQS
DQ*2
Dout Dout Dout Dout Dout Dout Dout Dout
Din Din Din Din
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3
RL = 5
WL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, n Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T6.
READ (BL8) to WRITE (BC4) OTF
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command*3
Address*4
PRE
READ
NOP
NOP
tRTP = 4 nCK
tRP
Bank
Col n
tRPST
tRPRE
DQS, /DQS
DQ*2
Dout Dout Dout
n+1 n+2 n+3
Dout Dout Dout
n+5 n+6 n+7
Dout
n
Dout
n+4
CL = 5
RL = AL + CL
VIH or VIL
Notes: 1. BL8, AL = 0, RL = 5, CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Precharge Operation, RL = 5
Data Sheet E1248E40 (Ver. 4.0)
107
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
CK
/CK
Command*3
Address*4
READ
NOP
NOP
PRE
tRTP = 4 nCK
tRP
Bank
Col n
tRPST
tRPRE
DQS, /DQS*2
DQ
Dout Dout Dout Dout Dout Dout Dout Dout
n+1 n+2 n+3 n+4 n+5 n+6 n+7
n
AL = 4
CL = 5
RL = AL + CL
Internal Read command starls here
VIH or VIL
Notes: 1. BL8, RL = 9, AL = (CL 1), CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Precharge Operation, RL = 9
Data Sheet E1248E40 (Ver. 4.0)
108
EDJ1108BABG, EDJ1116BABG
Write Timing Definition
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
1
/CK*
CK
3
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command*
WL = AL + CWL
Bank,
Col n
4
Address*
tDQSS tDSH
tDSH
tDSH
tDSH
tWPRE (min)
tWPST (min)
tDQSS(min)
DQS, /DQS
tDQSH
tDQSL tDQSL
tDQSH
tDQSH
tDQSH
tDQSL
tDQSH (min)
tDQSL
tDQSL (min)
tDSS
tDSS
tDSS
tDSS
tDSS
Din
Din
Din
Din
Din
Din
Din
Din
n
2
DQ*
n + 1 n + 2 n + 3 n + 4 n + 5 n + 6 n + 7
tDSH
tDSH
tDSH
tDSH
tWPRE (min)
tWPST (min)
tDQSL (min)
DQS, /DQS
tDQSH
tDQSH
tDQSH
tDQSH
tDQSL
tDQSH (min)
tDQSL
tDQSL
tDQSL
tDSS
tDSS
tDSS
tDSS
tDSS
Din
Din
Din
Din
Din
Din
Din
Din
n
2
DQ*
n + 1 n + 2 n + 3 n + 4 n + 5 n + 6 n + 7
tDQSS
tDSH
tWPRE (min)
tDSH
tDSH
tDSH
tDQSS(max)
tWPST (min)
DQS, /DQS
tDQSH
tDQSL
tDQSH
tDQSH
tDQSH
tDQSL
tDQSL
tDQSL
tDQSL (min)
tDQSH (min)
tDSS
tDSS
tDSS
tDSS
tDSS
Din
n
Din
Din
Din
Din
Din
Din
Din
2
DQ*
n + 1 n + 2 n + 3 n + 4 n + 5 n + 6 n + 7
Notes: 1.
BL8, WL = 5 (AL = 0, CWL = 5)
Din n = data-in from column n.
VIH or VIL
2.
3.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
5. tDQSS must be met at each rising clock edge.
Write Timing Definition
Data Sheet E1248E40 (Ver. 4.0)
109
EDJ1108BABG, EDJ1116BABG
Write Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of
the clock. The address inputs determine the starting column address. Write latency (WL) is equal to (AL + CWL). A
data strobe signal (DQS) should be driven low (preamble) one clock prior to the WL. The first data bit of the burst
cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble. The tDQSS
specification must be satisfied for write cycles. The subsequent burst bit data are issued on successive edges of the
DQS until the burst length of 4 is completed. When the burst has finished, any additional data supplied to the DQ
pins will be ignored. The DQ Signal is ignored after the burst write operation is complete. The time from the
completion of the burst write to bank precharge is the write recovery time (tWR).
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
CK
/CK
Command*3
Address*4
NOP
WRIT
WL = AL + CWL
Bank
Col n
tWPRE
tWPST
DQS, /DQS
DQ*2
Din Din Din Din Din Din Din Din
n+1 n+2 n+3 n+4 n+5 n+6 n+7
n
VIH or VIL
Notes: 1. BL8, WL = 5 (AL = 0, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
Burst Write Operation, WL = 5
Data Sheet E1248E40 (Ver. 4.0)
110
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
CK
/CK
Command*3
Address*4
NOP
WRIT
Bank
Col n
tWPST
tWPRE
DQS, /DQS
DQ*2
Din Din Din Din Din Din Din Din
n+1 n+2 n+3 n+4 n+5 n+6 n+7
n
AL = 4
CWL = 5
WL = AL + CWL
VIH or VIL
Notes: 1. BL8, WL = 9 (AL = (CL − 1), CL = 5, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRITcommand at T0.
Burst Write Operation, WL = 9
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Tn Tn+1 Tn+2
CK
/CK
Command*3
Address*4
NOP
WRIT
READ
tWTR*5
Bank
Col n
Bank
Col b
tWPRE
tWPST
DQS, /DQS
DQ*2
Din
n
Din Din Din
n+1 n+2 n+3
WL = 5
RL = 5
Notes: 1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n; Dout b = data-out from column b.
VIH or VIL
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0 and READ command at Tn.
5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the
last write data shown at T7.
Write to Read Operation
Data Sheet E1248E40 (Ver. 4.0)
111
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Tn Tn+1 Tn+2
CK
/CK
Command*3
Address*4
WRIT
PRE
NOP
tWR*5
Bank
Col n
tWPRE
tWPST
DQS, /DQS
DQ*2
Din
n
Din Din Din
n+1 n+2 n+3
WL = 5
VIH or VIL
Notes: 1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0.
5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7.
tWR specifies the last burst write cycle until the precharge command can be issued to the same bank .
Write to Precharge Operation
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
CK
/CK
Command*3
Address*4
WRIT
NOP
WRIT
NOP
tCCD
tWR
tBL = 4 clocks
tWTR
Bank
Col n
Bank
Col b
tWPRE
tWPST
DQS, /DQS
DQ*2
Din Din Din Din Din Din Din Din Din Din Din Din Din Din Din Din
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
WL = 5
WL = 5
Notes: 1. BL8, WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
VIH or VIL
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0 and T4.
WRITE (BL8) to WRITE (BL8)
Data Sheet E1248E40 (Ver. 4.0)
112
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
CK
/CK
Command*3
Address*4
NOP
tCCD
NOP
WRIT
WRIT
tWR
tBL = 4 clocks
tWTR
Bank
Col n
Bank
Col b
tWPRE
tWPST
tWPRE
tWPST
DQS, /DQS
DQ*2
Din Din Din Din
n+1 n+2 n+3
Din Din Din Din
b+1 b+2 b+3
n
b
WL = 5
WL = 5
Notes: 1. BC4, WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
VIH or VIL
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by either MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0 and T4.
WRITE (BC4) to WRITE (BC4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
T14
CK
/CK
Command*3
Address*4
WRIT
READ
NOP
NOP
tWTR
Bank
Col n
Bank
Col b
tWPRE
tWPST
DQS, /DQS
DQ*2
Din Din Din Din Din Din Din Din
n+1 n+2 n+3 n+4 n+5 n+6 n+7
n
WL = 5
RL = 5
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. Din n = data-in from column n; DOUT b = data-out from column b.
VIH or VIL
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
WRITE (BL8) to READ (BC4/BL8)
Data Sheet E1248E40 (Ver. 4.0)
113
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
T14
CK
/CK
Command*3
Address*4
WRIT
READ
NOP
tBL = 4 clocks
NOP
tWTR
Bank
Col b
Bank
Col n
tWPRE
tWPST
DQS, /DQS
DQ*2
Din Din Din Din
n+1 n+2 n+3
n
RL = 5
WL = 5
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. Din n = data-in from column n; Dout b = data-out from column b.
VIH or VIL
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
WRITE (BC4) to READ (BC4/BL8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
T14
CK
/CK
Command*3
Address*4
WRIT
WRIT
NOP
tCCD
NOP
tBL = 4 clocks
tWR
tWTR
Bank
Col n
Bank
Col b
tWPRE
tWPST
DQS, /DQS
DQ*2
Din Din Din Din Din Din Din Din Din Din Din Din
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3
WL = 5
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
VIH or VIL
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T4.
WRITE (BL8) to WRITE (BC4)
Data Sheet E1248E40 (Ver. 4.0)
114
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12
T13
T14
CK
/CK
Command*3
Address*4
NOP
tCCD
NOP
tBL = 4 clocks
WRIT
WRIT
tWR
tWTR
Bank
Col n
Bank
Col b
tWPRE
tWPST
tWPRE
tWPST
DQS, /DQS
DQ*2
Din Din Din Din
Din Din Din Din Din Din Din Din
b+1 b+2 b+3 b+4 b+5 b+6 b+7
n
n+1 n+2 n+3
b
WL = 5
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
VIH or VIL
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
WRITE (BC4) to WRITE (BL8)
Data Sheet E1248E40 (Ver. 4.0)
115
EDJ1108BABG, EDJ1116BABG
Write Timing Violations
Motivation
Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure
the DRAM works properly.
However it is desirable for certain minor violations, that the DRAM is guaranteed not to "hang up" and error to be
limited to that particular operation.
For the following it will be assumed that there are no timing violations w.r.t to the write command itself (including
ODT etc.) and that it does satisfy all timing requirements not mentioned below.
Data Setup and Hold Violations
Should the data to strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a
write burst, then wrong data might be written to the memory location addressed with this write command.
In the example (Figure Write Timing Parameters) the relevant strobe edges for write burst A are associated with the
clock edges: T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5.
Subsequent reads from that location might result in unpredictable read data, however the DRAM will work properly
otherwise.
Strobe to Strobe and Strobe to Clock Violations
Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements
(tDSS, tDSH tDQSS) be violated for any of the strobe edges associated with a write burst, then wrong data might be
written to the memory location addressed with the offending write command. Subsequent reads from that location
might result in unpredictable read data, however the DRAM will work properly otherwise.
In the example (Figure Write Timing Parameters) the relevant strobe edges for write burst A are associated with the
clock edges: T4, T4.5, T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5 and T9. Any timing requirements starting and ending
on one of these strobe edges are T8, T8.5, T9, T9.5, T10, T10.5, T11, T11.5, T12, T12.5 and T13. Some edges are
associated with both bursts.
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13 T14
CK
/CK
Command*3
WRIT
A
WRIT
B
NOP
NOP
Address*4
/CS
ODTL
BL/2 + 2 + ODTL
WL
tDQSS
tDSS
tDSH
tDQSL
tWPST
tWPRE
tDQSH
DQS, /DQS
DQ*2
tDH
tDS
VIH or VIL
Write Timing Parameters
Data Sheet E1248E40 (Ver. 4.0)
116
EDJ1108BABG, EDJ1116BABG
Write Data Mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR3 SDRAMs, Consistent with the
implementation on DDR-I SDRAMs. It has identical timings on write operations as the data bits, and though used in
a uni-directional manner, is internally loaded identically to data bits to ensure matched system timing. DM is not
used during read cycles.
T1
T2
T3
T4
T5
T6
DQS
/DQS
DQ
DM
in
in
in
in
in
in
in
in
Write mask latency = 0
Data Mask Timing
/CK
CK
[tDQSS(min.)]
tWR
WRIT
Command
NOP
WL
tDQSS
DQS, /DQS
DQ
in0
in2 in3
DM
WL
tDQSS
[tDQSS(max.)]
DQS, /DQS
DQ
in0
in2 in3
DM
Data Mask Function, WL = 5, AL = 0 shown
Data Sheet E1248E40 (Ver. 4.0)
117
EDJ1108BABG, EDJ1116BABG
Precharge
The precharge command is used to precharge or close a bank that has been activated. The precharge command is
triggered when /CS, /RAS and /WE are low and /CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank independently or all banks simultaneously. Four address bits A10,
BA0, BA1 and BA2 are used to define which bank to precharge when the command is issued.
[Bank Selection for Precharge by Address Bits]
A10
L
BA0
L
BA1
L
BA2
L
Precharged Bank(s)
Bank 0 only
L
H
L
L
L
Bank 1 only
L
H
H
L
L
Bank 2 only
L
H
L
L
Bank 3 only
L
H
H
H
H
×
Bank 4 only
L
H
L
L
Bank 5 only
L
H
H
×
Bank 6 only
L
H
×
Bank 7 only
H
All banks 0 to 7
Remark: H: VIH, L: VIL, ×: VIH or VIL
Data Sheet E1248E40 (Ver. 4.0)
118
EDJ1108BABG, EDJ1116BABG
Auto Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write Command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the Read or Write Command is issued, then the auto precharge function is
engaged. During auto precharge, a read Command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst.
Auto precharge can also be implemented during Write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The /RAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Burst Read with Auto Precharge
If A10 is high when a Read Command is issued, the Read with Auto precharge function is engaged. The DDR3
SDRAM starts an auto precharge operation on the rising edge which is (AL + BL/2) cycles later from the read with
AP command when tRAS (min.) is satisfied. If tRAS (min.) is not satisfied at the edge, the start point of auto
precharge operation will be delayed until tRAS (min.) is satisfied. A new bank active (command) may be issued to
the same bank if the following two conditions are satisfied simultaneously.
(1) The /RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
Burst Write with Auto precharge
If A10 is high when a write command is issued, the Write with auto precharge function is engaged. The DDR3
SDRAM automatically begins precharge operation after the completion of the burst writes plus write recovery time
(tWR). The bank-undergoing auto precharge from the completion of the write burst may be reactivated if the
following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
Data Sheet E1248E40 (Ver. 4.0)
119
EDJ1108BABG, EDJ1116BABG
Auto-Refresh
The refresh command (REF) is used during normal operation of the DDR3 SDRAMs. This command is non
persistent, so it must be issued each time a refresh is required. The DDR3 SDRAM requires refresh cycles at an
average periodic interval of tREFI. When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the
clock, the chip enters a refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the
precharge time tRP(min) before the refresh command can be applied. The refresh addressing is generated by the
internal refresh controller. This makes the address bits “Don’t Care” during a refresh command. An internal address
counter supplies the addresses during the refresh cycle. No control of the external address bus is required once this
cycle has started. When the refresh cycle has completed, all banks of the SDRAM will be in the precharged (idle)
state. A delay between the refresh command and the next valid command, except NOP or DESL, must be greater
than or equal to the minimum refresh cycle time tRFC(min) as shown in the following figure. Note that the tRFC
timing parameter depends on memory density.
In general, a refresh command needs to be issued to the DDR3 SDRAM regularly every tREFI interval. To allow for
improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is
provided. A maximum of 8 refresh commands can be postponed during operation of the DDR3 SDRAM, meaning
that at no point in time more than a total of 8 refresh commands are allowed to be postponed. In case that 8 refresh
commands are postponed in a row, the resulting maximum interval between the surrounding refresh commands is
limited to 9 × tREFI. A maximum of 8 additional refresh commands can be issued in advance (“pulled in”), with each
one reducing the number of regular refresh commands required later by one. Note that pulling in more than
8 refresh commands in advance does not further reduce the number of regular refresh commands required later, so
that the resulting maximum interval between two surrounding refresh commands is limited to 9 × tREFI. At any given
time, a maximum of 16 REF commands can be issued within tREFI. Before entering self-refresh mode, all
postponed refresh commands must be executed.
T0
T1
T2
T3
/CK
CK
VIH
≥ tRP
≥ tRFC
≥ tRFC
CKE
Any
Command
PRE
NOP
REF
REF
NOP
Command
Refresh Command Timing
tREFI
9 × tRER
t
tRFC
8 × REF-Commands postponed
Postponing Refresh Command
tREFI
9 × tRER
t
tRFC
8 × REF-Commands postponed
Pulling-in Refresh Command
Data Sheet E1248E40 (Ver. 4.0)
120
EDJ1108BABG, EDJ1116BABG
Self-Refresh
The self-refresh command can be used to retain data in the DDR3 SDRAM, even if the rest of the system is powered
down. When in the self-refresh mode, the DDR3 SDRAM retains data without external clocking. The DDR3 SDRAM
device has a built-in timer to accommodate self-refresh operation. The Self-Refresh Entry (SELF) command is
defined by having /CS, /RAS, /CAS and CKE held low with /WE high at the rising edge of the clock.
Before issuing the self-refresh entry command, the DDR3 SDRAM must be idle with all bank precharge state with
tRP satisfied. Also, on-die termination must be turned off before issuing Self-refresh entry command, by either
registering ODT pin low “ODTL + 0.5tCK” prior to the self-refresh entry command or using MRS to MR1 command.
Once the self-refresh entry command is registered, CKE must be held low to keep the device in self-refresh mode.
The DLL is automatically disabled upon entering Self-refresh and is automatically enabled (including a DLL-Reset)
upon exiting self-refresh.
When the DDR3 SDRAM has entered self-refresh mode all of the external control signals, except CKE and /RESET,
are “don’t care”. For proper self-refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ,
VREFCA and VREFDQ) must be at valid levels. The DRAM initiates a minimum of one refresh command internally
within tCKESR period once it enters self-refresh mode.
The clock is internally disabled during self-refresh operation to save power. The minimum time that the DDR3
SDRAM must remain in self-refresh mode is tCKESR. The user may change the external clock frequency or halt the
external clock tCKSRE clock cycles after self-refresh entry is registered, however, the clock must be restarted and
stable tCKSRX clock cycles before the device can exit self-refresh operation. To protect DRAM internal delay on
CKE line to block the input signals, one NOP (or DESL) command is needed after self-refresh entry.
The procedure for exiting self-refresh requires a sequence of events. First, the clock must be stable tCKSRX prior to
CKE going back high. Once a Self-Refresh Exit command (SREX, combination of CKE going high and either NOP
or DESL on command bus) is registered, a delay of at least tXS must be satisfied before a valid command not
requiring a locked DLL can be issued to the device to allow for any internal refresh in progress. Before a command
which requires a locked DLL can be applied, a delay of at least tXSDLL and applicable ZQCAL function
requirements (TBD) must be satisfied.
CKE must remain high for the entire self-refresh exit period tXSDLL for proper operation except for self-refresh
reentry. Upon exit from self-refresh, the DDR3 SDRAM can be put back into Self-refresh mode after waiting at least
tXS period and issuing one refresh command (refresh period of tRFC). NOP or DESL commands must be registered
on each positive clock edge during the self-refresh exit interval tXS. ODT must be turned off during tXSDLL.
The use of Self-refresh mode introduces the possibility that an internally timed refresh event can be missed when
CKE is raised for exit from self-refresh mode. Upon exit from self-refresh, the DDR3 SDRAM requires a minimum of
one extra refresh command before it is put back into self-refresh mode.
Ta
Tb
Tc Tc+1Tc+2
Td
Te
Tf Tf+1 Tf+2
Tg Tg+1
Th Th+1
CK, /CK
tCKSRE
tCKSRX
tXSDLL
tRP
tXS
4
2
2
3
3
*
*
*
* *
Valid Valid
1
*
Command
Valid Valid
PALL
SELF NOP
SREX
tCKESR
CKE
ODT
ODTLoff + 0.5 x tCK
Notes: 1. Only NOP or DESL commands.
2. Valid commands not requiring a locked DLL.
3. Valid commands requiring a locked DLL.
4. One NOP or DESL commands.
Self-Refresh Entry and Exit Timing
Data Sheet E1248E40 (Ver. 4.0)
121
EDJ1108BABG, EDJ1116BABG
Power-Down Mode
Power-down is synchronously entered when CKE is registered low (along with NOP or DESL command). CKE is not
allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or read/write
operation are in progress. CKE is allowed to go low while any of other operations such as row activation, precharge
or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing those
operations.
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is
not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read operation
and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification as well
proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM
specifications.
During power-down, if all banks are closed after any in-progress commands are completed, the device will be in
precharge power-down mode; if any bank is open after in-progress commands are completed, the device will be in
active power-down mode.
Entering power-down deactivates the input and output buffers, excluding CK, /CK, ODT, CKE and /RESET. To
protect DRAM internal delay on CKE line to block the input signals, multiple NOP or DESL commands are needed
during the CKE switch off and cycle(s) after this timing period are defined as tCPDED. CKE_low will result in
deactivation of command and address receivers after tCPDED has expired.
[Power-Down Entry Definitions]
Status of DRAM
MR0 bit A12
DLL
On
PD Exit
Fast
Relevant Parameters
Active
(A bank or more Open)
Don’t Care
tXP to any valid command
tXP to any valid command. Since it is in
precharge state, commands here will be ACT,
AR, MRS, PRE or PALL .
Precharged
0
1
Off
On
Slow
Fast
(All banks Precharged)
tXPDLL to commands who need DLL to operate,
such as READ, READA or ODT control line.
Precharged
(All Banks Precharged)
tXP to any valid command
Also the DLL is disabled upon entering precharge power-down for slow exit mode, but the DLL is kept enabled
during precharge power-down for fast exit mode or active power-down. In power-down mode, CKE low, RESET high
and a stable clock signal must be maintained at the inputs of the DDR3 SDRAM, and ODT should be in a valid state
but all other input signals are “Don’t Care” (If RESET goes low during power-down, the DRAM will be out of PD
mode and into reset state). CKE low must be maintained until tPD has been satisfied. Power-down duration is
limited by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered high (along with a NOP or DESL command).
CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with
power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined at AC
Characteristics table of this data sheet.
Data Sheet E1248E40 (Ver. 4.0)
122
EDJ1108BABG, EDJ1116BABG
Timing Diagrams for Proposed CKE with Power-Down Entry, Power-Down Exit
T0
T1
T5
T6
T7
T8
T9
T10
T11
T12
Tx
Tx+1
/CK
CK
Command
READ
Valid
NOP
NOP
BA
tCPDED
tRDPDEN
tIS
VIH
CKE
RL = CL + AL = 5 (AL = 0)
tPD
out out out out out out out out
DQ(BL8)
DQ(BC4)
0
1
2
3
4
5
6
7
out out out out
0
1
2
3
Power-Down Entry after Read and Read with Auto Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T14 T15
T16 T17 T18 Tn
CK
/CK
Command
NOP
NOP
NOP
WRITA
Valid
BA
tCPDED
tIS
CKE
tWRAPDEN
WL=5
tWR*
tPD
in in in in in in in in
DQ(BL8)
DQ(BC4)
0
1
2
3
4
5
6
7
in in in in
0
1
2
3
Start Internal
Precharge
Note: tWR is programmed through MRS.
Power-Down Entry After Write with Auto Precharge
Data Sheet E1248E40 (Ver. 4.0)
123
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 Tx Tx+1 Tx+2 Tx+3
CK
/CK
Command
WRITE
Valid
NOP
NOP
BA
tCPDED
tIS
CKE
tWRPDEN
WL=5
tWR
tPD
in in in in in in in in
DQ(BL8)
DQ(BC4)
0
1
2
3
4
5
6
7
in in in in
0
1
2
3
Power-Down Entry after Write
T0
T1
Tn Tn+1
Tx
Ty
CK
/CK
tPD
tIH
tIH
CKE
tIS
tIS
tCPDED
Valid NOP NOP
tCKE (min.)
Command
NOP NOP NOP NOP NOP Valid NOP NOP NOP NOP
N
tXP
Enter power-down mode
Exit power-down
Note: Valid command at T0 is ACT, NOP, DESL or precharge with still one bank remaining open after completion of
precharge command.
Active Power-Down Entry and Exit Timing Diagram
T0
T1
Tn Tn+1
Tx
Ty
CK
/CK
tPD
tIH
tIH
CKE
tIS
tCPDED
tIS
tCKE (min.)
Command
NOP NOP
NOP NOP NOP NOP NOP Valid NOP NOP NOP1NOP N
tXP
Enter power-down mode
Exit power-down
Precharge Power-Down (Fast Exit Mode) Entry and Exit
Data Sheet E1248E40 (Ver. 4.0)
124
EDJ1108BABG, EDJ1116BABG
T0
T1
Tn Tn+1
Tx
Ty
CK
/CK
tIH
tIH
CKE
tIS
tIS
tPD
tCPDED
tCKE (min.)
NOP NOP NOP NOP NOP NOP Valid NOP Valid NOP NO
tXP
Command
NOP NOP NOP
tXPDLL
Exit power-down
Enter power-down mode
Precharge Power-Down (Slow Exit Mode) Entry and Exit
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command
REF
NOP
NOP
tCPDED
tREFPDEN
tIS
CKE
Refresh Command to Power-Down Entry
T0
T1
T2
T3
T4
Tn
Tn+1 Tn+2
End
CK
/CK
Command
NOP
NOP
ACT
tCPDED
tPD
tACTPDEN
tIS
CKE
Active Command to Power-Down Entry
Data Sheet E1248E40 (Ver. 4.0)
125
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
End
CK
/CK
PRE/
PALL
Command
NOP
NOP
tCPDED
tPREPDEN
tIS
CKE
Precharge/Precharge All Command to Power-Down Entry
T0
T1
T2
T3
Tn
Tn+1
NOP
Tn+2
NOP
Tn+3 Tn+4 Tn+5
Tn+6 Tn+7
CK
/CK
Command
MRS
NOP
NOP
NOP
tCPDED
tMRSPDEN
tIS
CKE
MRS Command to Power-Down Entry
Data Sheet E1248E40 (Ver. 4.0)
126
EDJ1108BABG, EDJ1116BABG
Timing Values tXXXPDEN Parameters
Status of DRAM
Idle or Active
Idle or Active
Active
Last Command before CKE_low
Parameter
tACTPDEN
tPRPDEN
Parameter Value
Unit
nCK
nCK
nCK
Activate
1
Precharge
1
READ/READA
tRDPDEN
tWRPDEN
tWRPDEN
tWRAPDEN
tWRAPDEN
tREFPDEN
tMRSPDEN
RL + 4 + 1
Active
WRIT for BL8MRS, BL8OTF, BC4OTF
WRIT for BC4MRS
WRITA for BL8MRS, BL8OTF, BC4OTF
WRITA for BC4MRS
Refresh
WL + 4 + (tWR/tCK (avg)) *1 nCK
WL + 2 + (tWR/tCK (avg))*1 nCK
Active
Active
WL + 4 + WR*2 + 1
WL + 2 + WR*2 + 1
nCK
nCK
nCK
Active
Idle
1
Idle
Mode Register Set
tMOD
Notes: 1. tWR is defined in ns, for calculation of tWRPDEN, it is necessary to round up tWR / tCK to next integer.
2. WR in clock cycles as programmed in mode register.
Power-Down Entry and Exit Clarification
Case 1:
When CKE registered low for power-down entry, tPD must be satisfied before CKE can be registered high for power-
down exit.
Case 1a:
After power-down exit, tCKE must be satisfied before CKE can be registered low again.
T0
T1
Tn
Tn+1
Tx
Ty
CK
/CK
tIH
tIH
CKE
tIS
tIS
tPD
tCPDED
NOP NOP NOP
tCKE
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
N
Command
Exit power-down
Enter power-down
Power-Down Entry/Exit Clarifications (1)
Data Sheet E1248E40 (Ver. 4.0)
127
EDJ1108BABG, EDJ1116BABG
Case 2:
For certain CKE intensive operations, for example, repeated "PD Exit - Refresh - PD Entry" sequence, the number of
clock cycles between PD Exit and PD Entry may be insufficient to keep the DLL updated. Therefore the following
conditions must be met in addition to tPD in order to maintain proper DRAM operation when Refresh commands is
issued in between PD Exit and PD Entry.
Power-down mode can be used in conjunction with Refresh command if the following conditions are met:
1. tXP must be satisfied before issuing the command
2. tXPDLL must be satisfied (referenced to registration of PD exit) before next power-down can be entered.
T0 T1
Tn Tn+1
tIH
Tx
Ty
CK
/CK
tIH
CKE
tIS
tCPDED
tIS
tXPDLL (min.)
tCKE (min.)
tPD
Command
NOP NOP NOP
NOP
NOP
tXP
REF NOP NOP NOP NOP NOP NOP NOP
Exit power-down
Enter power-down
Power-Down Entry/Exit Clarifications (2)
Case 3:
If an early PD Entry is issued after Refresh command, once PD Exit is issued, NOP or DESL with CKE high must be
issued until tRFC from the refresh command is satisfied. This means CKE cannot be de-asserted twice within tRFC
window.
T0
T1
Tn
Tn+1
Tx
Ty
CK
/CK
tIH
tIH
CKE
tIS
tIS
tPD
tXPDLL
tCPDED
REF NOP NOP
tCKE (min.)
Command
NOP NOP NOP NOP NOP NOP NOP NOP NOP Valid
N
tRFC (min.)
Exit power-down
Enter power-down
Note: * Synchronous ODT Timing starts at the end of tXPDLL (min.)
Power-Down Entry/Exit Clarifications (3)
Data Sheet E1248E40 (Ver. 4.0)
128
EDJ1108BABG, EDJ1116BABG
Input Clock Frequency Change during Precharge Power-Down
Once the DDR3 SDRAM is initialized, the DDR3 SDRAM requires the clock to be “stable” during almost all states of
normal operation. This means once the clock frequency has been set and is to be in the “stable state”, the clock
period is not allowed to deviate except for what is allowed for by the clock jitter and SSC (Spread Spectrum
Clocking) specifications.
The input clock frequency can be changed from one stable clock rate to another stable clock rate under two
conditions: (1) self-refresh mode and (2) precharge power-down mode. Outside of these two modes, it is illegal to
change the clock frequency. For the first condition, once the DDR3 SDRAM has been successfully placed in to Self-
Refresh mode and tCKSRE has been satisfied, the state of the clock becomes a don’t care. Once a don’t care,
changing the clock frequency is permissible, provided the new clock frequency is stable prior to tCKSRX. When
entering and exiting Self-Refresh mode for the sole purpose of changing the clock frequency, the self-refresh entry
and exit specifications must still be met as outlined in Self-Refresh section.
The second condition is when the DDR3 SDRAM is in Precharge Power-down mode (either fast exit mode or slow
exit mode.) ODT must be at a logic low ensuring RTT is in an off state prior to entering Precharge Power-down mode
and CKE must be at a logic low. A minimum of tCKSRE must occur after CKE goes low before the clock frequency
may change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum
operating frequency specified for the particular speed grade. During the input clock frequency change, ODT and
CKE must be held at stable low levels. Once the input clock frequency is changed, stable new clocks must be
provided to the DRAM tCKSRX before Precharge Power-down may be exited; after Precharge Power-down is exited
and tXP has expired, the DLL must be RESET via MRS. Depending on the new clock frequency additional MRS
commands may need to be issued to appropriately set the WR, CL, and CWL with CKE continuously registered high.
During DLL relock period, ODT must remain low. After the DLL lock time, the DRAM is ready to operate with new
clock frequency. This process is depicted in the figure Clock Frequency Change in Precharge Power-Down Mode.
Previous clock frequency
New clock frequency
T0
T1
tIS
T2
Ta
Tb
Tc
Tc+1 Td
Td+1
Te
Te+1
/CK
CK
tIH
tCKSRE
tCKSRX
CKE
tCPDED
NOP
NOP
NOP
NOP
NOP
Command
Address
MRS
NOP
Valid
Valid
DLL
RESET
tXP
tAOFPD/tAOF
ODT
tDLLK
High-Z
High-Z
DQS, /DQS
DQ
DM
Enter precharge
power-down mode
Exit precharge
power-down mode
Frequency
change
Notes: 1. Applicable for both slow exit and fast exit precharge power-down.
2. tCKSRE and tCKSRX are self-refresh mode specifications but the values
they represent are applicable here.
3. tAOFPD and tAOF must be satisfied and outputs high-z prior to T1;
refer to ODT timing for exact requirements.
Clock Frequency Change in Precharge Power-Down Mode
Data Sheet E1248E40 (Ver. 4.0)
129
EDJ1108BABG, EDJ1116BABG
On-Die Termination (ODT)
ODT (On-Die Termination) is a feature of the DDR3 SDRAM that allows the DRAM to turn on/off termination
resistance for each DQ, DQS, /DQS and DM for ×8 configuration (and TDQS, /TDQS for ×8 configuration, when
enabled via A11=1 in MR1) via the ODT control pin. For ×16 configuration ODT is applied to each DQU, DQL,
DQSU, /DQSU, DQSL, /DQSL, DMU and DML signal via the ODT control pin. The ODT feature is designed to
improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off
termination resistance for any or all DRAM devices.
The ODT feature is turned off and not supported in Self-Refresh mode.
A simple functional representation of the DRAM ODT feature is shown in figure Functional Representation of ODT.
ODT
VDDQ/2
To other
circuitry
like
RTT
RCV, ...
Switch
DQ, DQS, DM, TDQS
Functional Representation of ODT
The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control
information, see below. The value of RTT is determined by the settings of Mode Register bits (see MR1
programming figure in the section Programming the Mode Register). The ODT pin will be ignored if the Mode
Register MR1 is programmed to disable ODT and in self-refresh mode.
ODT Mode Register and ODT Truth Table
The ODT Mode is enabled if either of MR1 bits A2 or A6 or A9 are non-zero. In this case the value of RTT is
determined by the settings of those bits.
Application: Controller sends WRIT command together with ODT asserted.
• One possible application: The rank that is being written to provide termination.
• DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR)
• DRAM does not use any write or read command decode information
• The Termination Truth Table is shown in the Termination Truth Table
[Termination Truth Table]
ODT pin
DRAM Termination State
0
1
OFF
ON, (OFF, if disabled by MR1 bits A2, A6 and A9 in general)
Data Sheet E1248E40 (Ver. 4.0)
130
EDJ1108BABG, EDJ1116BABG
Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down
definition, these modes are:
• Active mode
• Idle mode with CKE high
• Active power-down mode (regardless of MR0 bit A12)
• Precharge power-down mode if DLL is enabled during precharge power-down by MR0 bit A12.
In synchronous ODT mode, RTT will be turned on or off ODTLon clock cycles after ODT is sampled high by a rising
clock edge and turned off ODTLoff clock cycles after ODT is registered low by a rising clock edge. The ODT latency
is tied to the write latency (WL) by: ODTLon = WL – 2; ODTLoff = WL – 2.
ODT Latency and Posted ODT
In Synchronous ODT mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to the
ODT signal. The DRAM internal ODT signal is delayed for a number of clock cycles defined by the Additive Latency
(AL) relative to the external ODT signal.
ODTLon = CWL + AL − 2; ODTLoff = CWL + AL − 2. For details, refer to DDR3 SDRAM latency definitions.
[ODT Latency Table]
Parameter
Symbol
ODTLon
ODTLoff
Value
Unit
nCK
nCK
ODT turn-on Latency
ODT turn-off Latency
WL – 2 = CWL + AL – 2
WL – 2 = CWL + AL – 2
Synchronous ODT Timing Parameters
In synchronous ODT mode, the following timing parameters apply (see Synchronous ODT Timing Examples (1)):
ODTLLow, ODTLLoff, tAON,(min.), (max.), tAOF,(min.),(max.) Minimum RTT turn-on time (tAON min) is the point in
time when the device leaves high impedance and ODT resistance begins to turn on. Maximum RTT turn-on time
(tAON max) is the point in time when the ODT resistance is fully on. Both are measured from ODTLon.
Minimum RTT turn-off time (tAOF min ) is the point in time when the device starts to turn-off the ODT resistance.
Maximum RTT turn-off time (tAOF max) is the point in time when the on-die termination has reached high
impedance. Both are measured from ODTLoff.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the
SDRAM with ODT high, then ODT must remain high until ODTH4 (BL4) or ODTH8 (BL8) after the Write command
(see figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high
to ODT registered low or from the registration of a Write command until ODT is registered low.
Data Sheet E1248E40 (Ver. 4.0)
131
EDJ1108BABG, EDJ1116BABG
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 END
CK
/CK
CKE
ODTH4 (min.)
AL = 3
ODT
AL = 3
IntODT
ODTLon = CWL + AL – 2
ODTLoff = CWL + AL – 2
CWL – 2
tAON (max.)
tAOF (max.)
tAOF (min.)
tAON (min.)
RTT
RTT
Synchronous ODT Timing Examples (1): AL=3, CWL = 5;
ODTLon = AL + CWL - 2 = 6; ODTLoff = AL + CWL - 2 = 6
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18
CK
/CK
CKE
Command
WRS4
ODTH4
ODTH4
ODTH4
ODT
ODTLoff = WL – 2
ODTLon = WL – 2
ODTLoff = WL – 2
ODTLon = WL – 2
tAON (max.)
tAON (min.)
tAOF (max.)
tAOF (min.)
tAOF (max.)
tAOF (min.)
DRAM_RTT
RTT
RTT
tAON (max.)
tAON (min.)
Synchronous ODT Timing Examples (2)*: BC4, WL = 7
ODT must be held high for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BC4) or ODTH8
(BL8) after write command (T7). ODTH is measured from ODT first registered high to ODT first registered low, or
from registration of write command with ODT high to ODT registered low. Note that although ODTH4 is satisfied
from ODT registered high at T6 ODT must not go low before T11 as ODTH4 must also be satisfied from the
registration of the write command at T7.
Data Sheet E1248E40 (Ver. 4.0)
132
EDJ1108BABG, EDJ1116BABG
ODT during Reads
As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle
before the read preamble by driving the ODT pin low appropriately. RTT may nominally not be enabled until one
clock cycle after the end of the post-amble as shown in the example in the figure below.
Note that ODT may be disabled earlier before the Read and enabled later after the Read than shown in this example
in the figure below.
ODT must be disabled externally during Reads by driving ODT low.
(example: CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL -2 = 8;
ODTLoff = CWL + AL - 2 = 8)
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 End
CK
/CK
READ
Command
Address
A
RL = AL + CL
ODT
ODTLoff = WL – 2 = CWL + AL – 2
ODTLon = WL – 2 = CWL + AL – 2
tAOF (max.)
tAOF (min.)
tAON (min.)
tAON (max.)
RTT
RTT
DRAM_RTT
DQS, /DQS
DQ
out out out out out out out out
0
1
2
3
4
5
6
7
Example of ODT during Reads
Data Sheet E1248E40 (Ver. 4.0)
133
EDJ1108BABG, EDJ1116BABG
Dynamic ODT
In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination
strength of the DDR3 SDRAM can be changed without issuing an MRS command. This requirement is supported by
the “Dynamic ODT” feature as described as follows:
Functional Description:
The Dynamic ODT mode is enabled if bit A9 or A10 of MR2 is set to ’1’. The function and is described as follows:
• Two RTT values are available: RTT_Nom and RTT_WR.
The value for RTT_Nom is pre-selected via bits A[9,6,2] in MR1
The value for RTT_WR is pre-selected via bits A[10,9] in MR2
• During operation without write commands, the termination is controlled as follows:
Nominal termination strength RTT_Nom is selected.
Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff.
• When a write command (WRIT, WRITA, WRS4, WRS8, WRAS4, WRAS8) is registered, and if Dynamic ODT is
enabled, the termination is controlled as follows:
A latency ODTLcnw after the write command, termination strength RTT_WR is selected.
A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for BC4, fixed by MRS or selected
OTF) after the write command, termination strength RTT_Nom is selected.
Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.
Table Latencies and Timing Parameters Relevant for Dynamic ODT shows latencies and timing parameters, which
are relevant for the on-die termination control in Dynamic ODT mode:
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a write command is registered by the SDRAM
with ODT high, then ODT must remain high until ODTH4 (BC4) or ODTH8 (BL8) after the write command (see the
figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high to
ODT registered low or from the registration of a write command until ODT is registered low.
[Latencies and Timing Parameters Relevant for Dynamic ODT]
Definition for all DDR3
Parameters
Symbols
ODTLon
Defined from
Registering external
ODT signal high
Defined to
speed bins
Unit
nCK
ODT turn-on Latency
Turning termination on
ODTLon = WL – 2.0
Registering external
ODT signal low
Registering external Change RTT strength from
write command RTT_Nom to RTT_WR
ODT turn-off Latency
ODTLoff
Turning termination off
ODTLoff = WL – 2.0
ODTLcnw = WL – 2.0
nCK
nCK
ODT latency for changing
from RTT_Nom to RTT_WR
ODTLcnw
ODT latency for change
from RTT_WR to RTT_Nom
(BC4)
ODT latency for change
from RTT_WR to RTT_Nom
(BL8)
Registering external Change RTT strength from ODTLcwn4 =
write command RTT_WR to RTT_Nom 4 + ODTLoff
ODTLcwn4
ODTLcwn8
nCK
nCK
Registering external Change RTT strength from ODTLcwn8 =
write command
RTT_WR to RTT_Nom
6 + ODTLoff
Minimum ODT high time after
ODTH4
ODTH4
ODTH8
tADC
registering ODT high ODT registered low
ODTH4 (min.) = 4
ODTH4 (min.) = 4
ODTH8 (min.) = 6
0.3ns to 0.7ns
nCK
ODT assertion
Minimum ODT high time after
Write (BC4)
Minimum ODT high time after
Write (BL8)
registering Write with
ODT registered low
ODT high
registering Write with
ODT registered low
ODT high
ODTLcnw
RTT valid
ODTLcwn
nCK
nCK
RTT change skew
tCK (avg)
Data Sheet E1248E40 (Ver. 4.0)
134
EDJ1108BABG, EDJ1116BABG
Mode Register Settings for Dynamic ODT Mode:
The table Mode Register for RTT Selection shows the Mode Register bits to select RTT_Nom and RTT_WR values.
[Mode Register for RTT Selection]
MR1
MR2
RTT_Nom
(RZQ)
RTT_Nom
RTT_WR
(RZQ)
Dynamic ODT OFF: Write does not
affect RTT value
RTT_WR*1
A9
0
A6
0
A2
0
(Ω)
A10
0
A9
0
(Ω)
off
off
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
RZQ/4
60
0
1
1
1
0
1
RZQ/4
60
RZQ/2
120
RZQ/2
120
RZQ/6
40
Reserved
Reserved
RZQ/12*2
RZQ/8*2
Reserved
Reserved
20
30
Reserved
Reserved
Notes: 1. RZQ = 240Ω.
2. If RTT_Nom is used during WRITEs, only the values RZQ/2, RZQ/4 and RZQ/6 are allowed.
ODT Timing Diagrams
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19
CK
/CK
ODTLcnw
WRS4
Command
ODTH4
ODTH4
ODT
RTT
ODTLon
ODTLoff
tADC (min.)
RTT_Nom
tADC (max.)
tAON (min.)
RTT_Nom
tADC (min.)
RTT_WR
tAOF (min.)
tAOF (max.)
tAON (max.)
tADC (max.)
ODTLcwn4
DQS, /DQS
DQ
in in in in
0
1
2
3
WL
Dynamic ODT: Behavior with ODT Being Asserted Before and after the Write*
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. ODTH4 applies to first registering ODT high and to the
registration of the write command. In this example ODTH4 would be satisfied if ODT is low at T8 (4 clocks
after the write command).
Data Sheet E1248E40 (Ver. 4.0)
135
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command
ODTH4
ODT
ODTLon
ODTLoff
tAON (min.)
tAOF (min.)
tAOF (max.)
RTT_Nom
RTT
tAON (max.)
DQS, /DQS
DQ
Dynamic ODT*: Behavior without Write Command; AL = 0, CWL = 5
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
ODTLcnw
ODTLon
Command
ODT
WRS8
ODTH8
ODTLoff
tAON (min.)
tAOF (min.)
tAOF (max.)
RTT_WR
RTT
tADC (max.)
ODTLcwn8
DQS, /DQS
DQ
in
0
in
in
in
in
in
in
6
in
1
2
3
4
5
7
WL
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 6 Clock Cycles
Note: Example for BL8 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH8 = 6 is exactly satisfied.
Data Sheet E1248E40 (Ver. 4.0)
136
EDJ1108BABG, EDJ1116BABG
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
ODTLcnw
WRS4
Command
ODTH4
ODT
RTT
ODTLon
ODTLoff
tAON (min.)
tAOF (min.)
tAOF (max.)
tADC (min.)
RTT_Nom
RTT_WR
tADC (max.)
tADC (max.)
ODTLcwn4
DQS, /DQS
DQ
in
in
in
2
in
0
1
3
WL
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for a Duration of 6 Clock Cycles, Example for BC4 (via MRS or OTF), AL = 0, CWL = 5.
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CK
/CK
ODTLcnw
ODTH4
Command
ODT
WRS4
ODTLon
ODTLoff
tAON (min.)
tAOF (min.)
tAOF (max.)
RTT_WR
RTT
tADC (max.)
ODTLcwn4
DQS, /DQS
DQ
in
0
in
1
in
in
2
3
WL
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 4 Clock Cycles
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH4 = 4 is exactly satisfied.
Data Sheet E1248E40 (Ver. 4.0)
137
EDJ1108BABG, EDJ1116BABG
Asynchronous ODT Mode
Asynchronous ODT mode is selected when DRAM runs in DLL-on mode, but DLL is temporarily disabled (i.e. frozen)
in precharge power-down (by MR0 bit A12).
Precharge power-down mode if DLL is disabled during precharge power-down by MR0 bit A12.
In asynchronous ODT timing mode, internal ODT command is not delayed by Additive Latency (AL) relative to the
external ODT command.
In asynchronous ODT mode, the following timing parameters apply (see figure Asynchronous ODT Timings):
tAONPD (min.), (max.), tAOFPD (min.),(max.)
Minimum RTT turn-on time (tAONPD (min.)) is the point in time when the device termination circuit leaves high
impedance state and ODT resistance begins to turn on. Maximum RTT turn-on time (tAONPD (max.)) is the point in
time when the ODT resistance is fully on. tAONPD (min.) and tAONPD (max.) are measured from ODT being
sampled high.
Minimum RTT turn-off time (tAOFPD (min.)) is the point in time when the devices termination circuit starts to turn off
the ODT resistance. Maximum ODT turn-off time (tAOFPD (max.)) is the point in time when the on-die termination
has reached high impedance. tAOFPD (min.) and tAOFPD (max.) are measured from ODT being sampled low.
CK
/CK
CKE
tIH
tIH
tIS
tIS
ODT
tAOFPD (min.)
tAONPD (max.)
RTT
DRAM_RTT
tAONPD (min.)
tAOFPD (max.)
Asynchronous ODT Timings on DDR3 SDRAM with Fast ODT Transition: AL is Ignored
In precharge power-down, ODT receiver remains active, however no read or write command can be issued, as the
respective address/command receivers may be disabled.
[Asynchronous ODT Timing Parameters for All Speed Bins]
Symbol
tAONPD
tAOFPD
Parameters
min.
2
max.
8.5
Unit
ns
Asynchronous RTT turn-on delay (power-down with DLL frozen)
Asynchronous RTT turn-off delay (power-down with DLL frozen)
2
8.5
ns
[ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period]
Description
min.
max.
ODT to RTT turn-on delay
min {ODTLon × tCK + tAON(min.);
tAONPD(min.) }
max {ODTLon × tCK + tAON(max.);
tAONPD(max.) }
min { (WL − 2.0) × tCK + tAON(min.); max {(WL − 2.0) × tCK + tAON(max.);
tAONPD(min.) }
min { ODTLoff × tCK +tAOF(min.);
tAOFPD(min.) }
tAONPD(max.) }
max { ODTLoff × tCK + tAOF(max.);
tAOFPD(max.) }
ODT to RTT turn-off delay
tANPD
min { (WL − 2.0) × tCK +tAOF(min.); max {(WL − 2.0) × tCK + tAOF(max.);
tAOFPD(min.) }
tAOFPD(max.) }
WL − 1.0
Data Sheet E1248E40 (Ver. 4.0)
138
EDJ1108BABG, EDJ1116BABG
Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0 there is a
transition period around power-down entry, where the DDR3 SDRAM may show either synchronous or
asynchronous ODT behavior.
This transition period ends when CKE is first registered low and starts tANPD before that. If there is a Refresh
command in progress while CKE goes low, then the transition period ends tRFC after the refresh command. tANPD
is equal to (WL − 1.0) and is counted (backwards) from the clock cycle where CKE is first registered low.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large.
The figure below shows the three different cases: ODT_A, synchronous behavior before tANPD; ODT_B has a state
change during the transition period; ODT_C shows a state change after the transition period.
CK
/CK
REF
NOP NOP
Command
CKE
PD entry transition period
tANPD
ODT
tRFC
ODT_A_sync
ODTLoff
tAOF (max.)
tAOF (min.)
RTT
DRAM_RTT_A_sync
ODT_B_tran
ODTLoff + tAOFPD (max.)
tAOFPD (max.)
ODTLoff + tAOFPD (min.)
tAOFPD (min.)
DRAM_RTT_B_tran
ODT_C_async
tAOFPD (max.)
tAOFPD (min.)
RTT
DRAM_RTT_C_async
Synchronous to Asynchronous Transition During Precharge Power-Down (with DLL Frozen) Entry
(AL = 0; CWL = 5; tANPD = WL − 1 = 4)
Data Sheet E1248E40 (Ver. 4.0)
139
EDJ1108BABG, EDJ1116BABG
Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0, there is also a
transition period around power-down exit, where either synchronous or asynchronous response to a change in ODT
must be expected from the DDR3 SDRAM.
This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered
high. tANPD is equal to (WL − 1.0) and is counted backward from the clock cycle where CKE is first registered high.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
See ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period table.
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large. The figure below shows
the three different cases: ODT_C, asynchronous response before tANPD; ODT_B has a state change of ODT during
the transition period; ODT_A shows a state change of ODT after the transition period with synchronous response.
T1 T3 T5 T7 T9 T11 T13 T15 T17 T19 T21 T23 T25 T27 T29 T31 T33 T35
CK
/CK
Command
NOP NOP
CKE
PD exit transition period
tANPD
tXPDLL
ODT_C_async
tAOFPD (max.)
tAOFPD (min.)
DRAM_RTT_C_async
ODT_B_tran
RTT
tAOFPD (min.)
ODTLoff + tAOF (min.)
ODTLoff + tAOF (max.)
tAOFPD (max.)
DRAM_RTT_B_tran
ODT_A_sync
ODTLoff
tAOF (max.)
tAOF (min.)
RTT
DRAM_RTT_A_sync
Asynchronous to Synchronous Transition during Precharge Power-Down (with DLL Frozen) Exit
(CL = 6; AL = CL - 1; CWL = 5; tANPD= WL − 1 = 9)
Data Sheet E1248E40 (Ver. 4.0)
140
EDJ1108BABG, EDJ1116BABG
Asynchronous to Synchronous ODT Mode during Short CKE high and Short CKE Low Periods
If the total time in precharge power-down state or idle state is very short, the transition periods for power-down entry
and power-down exit may overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at
the input may be synchronous OR asynchronous from the start of the power-down entry transition period to the end
of the PD exit transition period (even if the entry period ends later than the exit period).
If the total time in idle state is very short, the transition periods for power-down exit and power-down entry may
overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at the input may be
synchronous OR asynchronous from the start of the power-down exit transition period to the end of the power-down
entry transition period.
Note that in the bottom part of figure below it is assumed that there was no refresh command in progress when idle
state was entered.
CK
/CK
Command
REF
NOP NOP
NOP NOP
CKE
tANPD
tRFC
PD entry transition period
PD exit transition period
tXPDLL
tANPD
short CKE low transition period
CKE
tANPD
tXPDLL
tXPDLL
tANPD
short CKE high transition period
Transition Period for Short CKE Cycles with Entry and Exit Period Overlapping
(AL = 0, WL = 5, tANPD = WL − 1 = 4)
Data Sheet E1248E40 (Ver. 4.0)
141
EDJ1108BABG, EDJ1116BABG
ZQ Calibration
ZQ calibration command is used to calibrate DRAM RON and ODT values. DDR3 SDRAM needs longer time to
calibrate RON and ODT at initialization and relatively smaller time to perform periodic calibrations.
ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command may
be issued at any time by the controller depending on the system environment. ZQCL command triggers the
calibration engine inside the DRAM and once calibration is achieved the calibrated values are transferred from
calibration engine to DRAM I/O which gets reflected as updated RON and ODT values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the
transfer of values. All other ZQCL commands except the first ZQCL command issued after RESET is allowed a
timing period of tZQoper.
ZQCS command is used to perform periodic calibrations to account for voltage and temperature variations. A shorter
timing window is provided to perform the calibration and transfer of values as defined by timing parameter tZQCS.
One ZQCS command can effectively correct a minimum of 0.5% (ZQCorrection) of RON and RTT impedance error
within 64nCK for all speed bins assuming the maximum sensitivities specified in the ‘Output Driver Voltage and
Temperature Sensitivity’ and ‘ODT Voltage and Temperature Sensitivity’ tables. The appropriate interval between
ZQCS commands can be determined from these tables and other application-specific parameters. One method for
calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage (Vdriftrate) drift
rates that the SDRAM is subject to in the application, is illustrated. The interval could be defined by the following
formula:
×
×
where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the SDRAM temperature
and voltage sensitivities.
For example, if TSens = 1.5%/°C, VSens = 0.15%/mV, Tdriftrate = 1°C/sec and Vdriftrate = 15mV/sec, then the
interval between ZQCS commands is calculated as:
×
×
No other activities should be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper or
tZQCS. The quiet time on the DRAM channel allows in accurate calibration of RON and ODT. Once DRAM
calibration is achieved the DRAM should disable ZQ current consumption path to reduce power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh. Upon self-
refresh exit, DDR3 SDRAM will not perform an IO calibration without an explicit ZQ calibration command. The
earliest possible time for ZQ Calibration command (short or long) after self-refresh exit is tXS.
In dual rank systems that share the ZQ resistor between devices, the controller must not allow any overlap of
tZQoper or tZQinit or tZQCS between ranks.
CK
Valid
Valid
Command
A10
ZQCL
NOP/DESL
ZQCS
NOP/DESL
A10 = H
X
A10 = L
X
Address
CKE
tZQinit or tZQ oper
Hi-Z
tZQCS
Hi-Z
DQ Bus*2
Activities
Activities
Notes: 1. ODT must be disabled via ODT signal or MRS during calibration procedure.
2. All device connected to DQ bus should be High impedance during calibration.
ZQ Calibration
Data Sheet E1248E40 (Ver. 4.0)
142
EDJ1108BABG, EDJ1116BABG
ZQ External Resistor Value and Tolerance
DDR3 SDRAM has a 240Ω, ±1% tolerance external resistor connecting from the DDR3 SDRAM ZQ pin to ground.
The resister can be used as single DRAM per resistor.
Data Sheet E1248E40 (Ver. 4.0)
143
EDJ1108BABG, EDJ1116BABG
Package Drawing
78-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
8.6 ± 0.1
0.2 S B
INDEX MARK
0.2 S A
0.2
S
1.20 max.
S
0.35 ± 0.05
0.1
S
M
S A B
78-φ0.45 ± 0.05
φ0.15
B
A
1.6 0.8
6.4
INDEX MARK
ECA-TS2-0242-01
Data Sheet E1248E40 (Ver. 4.0)
144
EDJ1108BABG, EDJ1116BABG
96-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
8.6 ± 0.1
0.2 S B
INDEX MARK
0.2 S A
0.2
S
1.20 max.
S
0.35 ± 0.05
0.1
S
M
S A B
96-φ0.45 ± 0.05
φ0.15
B
A
1.6 0.8
6.4
INDEX MARK
ECA-TS2-0243-01
Data Sheet E1248E40 (Ver. 4.0)
145
EDJ1108BABG, EDJ1116BABG
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDJ1108BABG, EDJ1116BABG.
Type of Surface Mount Device
EDJ1108BABG: 78-ball FBGA < Lead free (Sn-Ag-Cu) >
EDJ1116BABG: 96-ball FBGA < Lead free (Sn-Ag-Cu) >
Data Sheet E1248E40 (Ver. 4.0)
146
EDJ1108BABG, EDJ1116BABG
NOTES FOR CMOS DEVICES
PRECAUTION AGAINST ESD FOR MOS DEVICES
1
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Data Sheet E1248E40 (Ver. 4.0)
147
EDJ1108BABG, EDJ1116BABG
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Be aware that this product is for use in typical electronic equipment for general-purpose applications.
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
Usage in environments with special characteristics as listed below was not considered in the design.
Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in
environments with the special characteristics listed below.
Example:
1) Usage in liquids, including water, oils, chemicals and organic solvents.
2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.
3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL2, H2S, NH3,
SO2, and NO .
x
4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.
5) Usage in places where dew forms.
6) Usage in environments with mechanical vibration, impact, or stress.
7) Usage near heating elements, igniters, or flammable items.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0706
Data Sheet E1248E40 (Ver. 4.0)
148
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