EDJ5308AASE-DJ-E [ELPIDA]
DDR DRAM, 64MX8, CMOS, PBGA78, ROHS COMPLIANT, MICRO, BGA-78;
| 型号： | EDJ5308AASE-DJ-E |
| 厂家： | 
ELPIDA MEMORY |
| 描述： | DDR DRAM, 64MX8, CMOS, PBGA78, ROHS COMPLIANT, MICRO, BGA-78 动态存储器 双倍数据速率 内存集成电路 |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
512M bits DDR3 SDRAM
EDJ5304AASE (128M words × 4 bits)
EDJ5308AASE (64M words × 8 bits)
EDJ5316AASE (32M words × 16 bits)
Features
Description
The EDJ5304AASE is a 512M bits DDR3 SDRAM
organized as 16,777,216 words × 4 bits × 8 banks.
• Power supply: VDD, VDDQ = 1.5V ± 0.075V
• Data rate: 1333Mbps/1066Mbps (max.)
The EDJ5308AASE is a 512M bits DDR3 SDRAM
organized as 8,388,608 words × 8 bits × 8 banks.
They are packaged in 78-ball FBGA (µBGA) package.
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
The EDJ5316AASE is a 512M bits DDR3 SDRAM
organized as 4,194,304 words × 16 bits × 8 banks.
It is packaged in 96-ball FBGA (µBGA) package.
• DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
• 8 internal banks for concurrent operation
• Data mask (DM) for write data
• Burst lengths (BL): 4, 8 and 4 with burst chop
• /CAS latency (CL): 5, 6, 7, 8, 9, 10
• /CAS write latency (CWL): 5, 6, 7, 8
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• Average refresh period: 7.8µs
• 1.5V I/O
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• On-Die-Termination for better signal quality
• Programmable Partial Array Self Refresh
• ZQ calibration for DQ drive and On-Die-Termination
• RESET-pin for Power-up sequence and reset-
function
• FBGA (µBGA) package with lead free solder
(Sn-Ag-Cu)
RoHs compliant
Document No. E0785E10 (Ver. 1.0)
Date Published August 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2005
EDJ5304AASE, EDJ5308AASE, EDJ5316AASE
Ordering Information
Mask
version
Organization
(words × bits)
Internal
Banks
Speed bin
(CL-tRCD-tRP)
Part number
Package
EDJ5304AASE-DG-E
EDJ5304AASE-DJ-E
EDJ5304AASE-AC-E
EDJ5304AASE-AE-E
EDJ5304AASE-AG-E
D3-1333 (8-8-8)
D3-1333 (9-9-9)
D3-1066 (6-6-6)
D3-1066 (7-7-7)
D3-1066 (8-8-8)
A
128M × 4
64M × 8
8
78-ball FBGA (µBGA)
EDJ5308AASE-DG-E
EDJ5308AASE-DJ-E
EDJ5308AASE-AC-E
EDJ5308AASE-AE-E
EDJ5308AASE-AG-E
D3-1333 (8-8-8)
D3-1333 (9-9-9)
D3-1066 (6-6-6)
D3-1066 (7-7-7)
D3-1066 (8-8-8)
EDJ5316AASE-DG-E
EDJ5316AASE-DJ-E
EDJ5316AASE-AC-E
EDJ5316AASE-AE-E
EDJ5316AASE-AG-E
D3-1333 (8-8-8)
D3-1333 (9-9-9)
D3-1066 (6-6-6)
D3-1066 (7-7-7)
D3-1066 (8-8-8)
32M × 16
96-ball FBGA (µBGA)
Part Number
E D J 53 04 A A SE - DG - E
Elpida Memory
Type
D: Monolithic Device
Environment code
E: Lead Free
Product Family
J: DDR3
Speed
DG: D3-1333 (8-8-8)
DJ: D3-1333 (9-9-9)
AC: D3-1066 (6-6-6)
AE: D3-1066 (7-7-7)
AG: D3-1066 (8-8-8)
Density / Bank
53: 512M / 8-bank
Organization
04: x4
08: x8
16: x16
Package
SE: FBGA (µBGA with back cover)
Power Supply, Interface
A: 1.5V
Die Rev.
Preliminary Data Sheet E0785E10 (Ver. 1.0)
2
EDJ5304AASE, EDJ5308AASE, EDJ5316AASE
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Preliminary Data Sheet E0785E10 (Ver. 1.0)
3
EDJ5304AASE, EDJ5308AASE, EDJ5316AASE
µBGA is a registered trademark of Tessera, Inc.
All other trademarks are the intellectual property of their respective owners.
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
Preliminary Data Sheet E0785E10 (Ver. 1.0)
4
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