EDC-660-19-01 [EPIGAP]
7-Segment LED-Chip; 7段LED芯片
| 型号： | EDC-660-19-01 |
| 厂家： | 
EPIGAP OPTOELECTRONIC GMBH |
| 描述： | 7-Segment LED-Chip |
| 文件： | 总1页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7-Segment LED-Chip
EDC-660-19-01
Preliminary
6/22/2007
Technology
rev. 05/07
Type
Electrodes
Radiation
Red
Diffusion type
GaAsP/GaAs
P (anode) up
1000
425
typ. dimensions (µm)
typ. thickness
330 µm
Application
This miniature device is an
excellent choice for
cathode
applications where small
size and reduced space
are important factors such
as complex displays in
optical devices for
laboratory, measurement,
control- and medical
equipment.
Au-alloy metalization
anode
Al metalization
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Ta = -40..120°C
Symbol
Value
Unit
Temperature coefficient of λC
Operating temperature range
Storage temperature range
TC(λC)
Tamb
Tstg
0.15
nm/K
°C
-30 to +100
-40 to +125
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
Min
Typ
Max
Unit
conditions1
VF
VF
VR
Iv
IF = 5 mA
IF = 20 mA
IR = 100 µA
IF = 5 mA
Forward voltage
Forward voltage
Reverse voltage
Luminous intensity/segment2
Luminous intensity/segment2
Luminous intensity/segment3
IV ratio segment to segment2
IV ratio to adjacent chip
1.7
1.8
1.9
2.1
V
V
5
V
60
85
µcd
µcd
µcd
Iv
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
280
400
710
Iv
1.75
2.00
670
λp
Peak wavelength
650
660
17
nm
nm
∆λ0.5
Spectral bandwidth at 50%
1Current for one segment
2Measured on bare chip on TO-18 header
3Measured on epoxy covered chip on TO-18 header
Labeling
IV(typ) [µcd]
VF(typ) [V]
Lot N°
Quantity
Type
EDC-660-19-01
Packing: Chips in wafer pack or on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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