S1L58152 [EPSON]

HIGH DENSITY GATE ARRAY; 高密度门阵列
S1L58152
型号: S1L58152
厂家: EPSON COMPANY    EPSON COMPANY
描述:

HIGH DENSITY GATE ARRAY
高密度门阵列

文件: 总12页 (文件大小:96K)
中文:  中文翻译
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DATA SHEET  
ASIC  
S1L50000  
S1L50000 SERIES HIGH DENSITY GATE ARRAY  
Œ
DESCRIPTION  
EPSON Electronics America, Inc.’s S1L50000 Series is a family of ultra high-speed VLSI CMOS  
gate array utilizing a 0.35µm “sea-of-gates” architecture. The S1L50000H products feature 5V  
tolerant I/O buffers.  
Ultra-high-speed, high density and low power consumption  
Low voltage operation: 3.3V and 2.0V  
Number of raw gates: 28,710 ~ 815,468 gates  
Œ
FEATURES  
Process  
0.35µm 2/3/4 layer metalization CMOS process  
Integration  
A maximum of 815,468 gates (2 input NAND gate equivalent)  
Operating Speed  
Internal gates: 140 ps (3.3V Typ), 210 ps (2.0V Typ)  
(2-input pair NAND, F/O = 2, Typical wire load)  
Input buffer: 380 ps (5.0V Typ) Built-in level shifter is used.  
400 ps (3.3V Typ), 1.30 ns (2.0V Typ)  
(F/O = 2, Typical wire load)  
Output buffer: 2.12 ns (5.0V Typ) Built-in level shifter is used.  
2.02 ns (3.3 V Typ), 3.90 ns (2.0V Typ)  
(CL = 15 pF)  
I/F Levels  
Input/Output TTL/CMOS/LVTTL compatible  
Input Modes  
TTL, CMOS, LVTTL, TTL Schmitt, CMOS Schmitt, LVTTL Schmitt, PCI  
Built-in pull-up and pull-down resistors can be usable.  
(2 types for each resistor value)  
Output Modes  
Output Drive  
Normal, 3-state, bi-directional, PCI  
IOL = 0.1, 1, 3, 8, 12, 24 mA selectable  
(Built-in level shifter is used at 5.0V)  
IOL = 0.1, 1, 2, 6, 12 mA selectable (at 3.3V)  
I
OL = 0.05, 0.3, 0.6, 2, 4 mA selectable (at 2.0V)  
RAM  
Asynchronous 1-port, asynchronous 2-port  
Dual Power  
Operation supported by using level-shifter circuit  
Internal logic: Operation supported by low voltage  
I/O Buffer:  
Built-in interfaces of both high and low voltages possible  
Operation possible at VDD = 2.0 ± 0.2V  
EPSON ELECTRONICS AMERICA, INC. 150 River Oaks Pkwy San Jose, CA 95134 Tel: (408) 922-0200 Fax: (408) 922-0238  
1
DATA SHEET  
ASIC  
S1L50000  
Œ
LINE UP  
The S1L50000 Series comprises 11 types of masters, from which the customer is able to select  
the master most suitable.  
Total  
BC  
Number  
of  
Number  
of  
Number  
of  
Cell Utilization Ratio (U)*1  
2-layer 3-layer 4-layer  
Master  
(Raw Gates)  
Pads  
88  
Columns (X) Rows (Y)  
metal  
50%  
47%  
47%  
45%  
45%  
45%  
43%  
40%  
40%  
40%  
40%  
metal  
88%  
85%  
85%  
80%  
75%  
75%  
75%  
70%  
70%  
70%  
70%  
metal  
95%  
95%  
95%  
95%  
95%  
95%  
95%  
90%  
90%  
90%  
90%  
S1L50282/283/284  
S1L50752/753/754  
S1L50992/993/994  
S1L51252/253/254  
S1L51772/773/774  
S1L52502/503/504  
S1L53352/353/354  
S1L54422/423/424  
S1L55062/063/064  
S1L56682/683/684  
S1L58152/153/154  
28710  
75774  
99198  
319  
519  
90  
144  
168  
188  
224  
264  
308  
352  
376  
432  
480  
146  
167  
188  
223  
265  
307  
352  
377  
433  
478  
594  
669  
125772  
177062  
250160  
335858  
442112  
506688  
668552  
815468  
794  
944  
1094  
1256  
1344  
1544  
1706  
NOTE: *1: This is the value when there are no cells, such as RAM cells. The cell use efficiency is dependent not only on the scope of  
the circuits, but also on the number of signals, the number of branches per signal, etc.; thus, use the values in this table only  
as an estimate  
2
EPSON ELECTRONICS AMERICA, INC.  
150 River Oaks Pkwy  
San Jose, CA 95134  
Tel: (408) 922-0200  
Fax: (408) 922-0238  
DATA SHEET  
ASIC  
S1L50000  
Œ
ELECTRICAL CHARACTERISTICS AND SPECIFICATIONS  
Absolute Maximum Ratings (For Single Power Supply):  
(Vss = 0V)  
Item  
Power Supply Voltage  
Input Voltage  
Output Voltage  
Output Current/Pin  
Storage Temperature  
Symbol  
Limits  
Unit  
VDD  
VI  
VO  
-0.3 to 4.0  
V
V
V
mA  
-0.3 to VDD + 0.5*1  
-0.3 to VDD + 0.5*1  
± 30  
IOUT  
TSTG  
-65 to 150  
°C  
*1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH  
systems.  
Absolute Maximum Ratings (For Dual Power Supplies):  
(Vss = 0V)  
Item  
Symbol  
Limits  
Unit  
Power Supply Voltage  
HVDD  
-0.3 to 7.0  
V
V
V
V
V
V
LVDD  
HVI  
-0.3 to 4.0  
Input Voltage  
-0.3 to HVDD + 0.5*1  
-0.3 to LVDD + 0.5*1  
-0.3 to HVDD + 0.5*1  
-0.3 to LVDD + 0.5*1  
LVI  
Output Voltage  
HVO  
LVO  
± 30 (± 50 *2)  
Output Current/Pin  
IOUT  
mA  
Storage Temperature  
TSTG  
-65 to 150  
°C  
**1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH  
systems.  
*2: Possible to use for 24mA of output buffer.  
EPSON ELECTRONICS AMERICA, INC. 150 River Oaks Pkwy San Jose, CA 95134 Tel: (408) 922-0200 Fax: (408) 922-0238  
3
DATA SHEET  
ASIC  
S1L50000  
Recommended Operating Conditions (For Single Power Supplies):  
Item  
Power Supply Voltage  
Input Voltage  
Symbol  
Min  
3.00  
VSS  
Typ  
3.30  
Max  
Unit  
VDD  
VI  
Ta  
3.60  
V
V
°C  
*1  
--  
VDD  
70*2  
85*3  
50  
50  
5
Ambient Temperature  
0
25  
25  
--  
--  
--  
-40  
--  
Normal Input for Rising Edge Input  
Normal Input for Falling Edge Input  
Schmitt Input for Rising Edge Input  
Schmitt Input for Falling Edge Input  
tri  
tfi  
tri  
tfi  
ns  
ns  
ms  
ms  
--  
--  
--  
--  
5
*1: Possible to use 5.25 or 5.50V of I/O buffer in the open-drain systems and input buffer in the IDC and IDH systems.  
*2: The ambient temperature range is recommended for Tj = 0 to 80°C  
*3: The ambient temperature range is recommended for Tj = -40 to 125°C  
Recommended Operating Conditions (For Single Power Supplies):  
Item  
Power Supply Voltage  
Input Voltage  
Symbol  
Min  
1.80  
VSS  
0
-40  
Typ  
2.00  
Max  
Unit  
VDD  
VI  
Ta  
2.20  
V
V
°C  
*1  
--  
VDD  
70*2  
85*3  
100  
100  
10  
Ambient Temperature  
25  
25  
--  
--  
--  
Normal Input for Rising Edge Input  
Normal Input for Falling Edge Input  
Schmitt Input for Rising Edge Input  
Schmitt Input for Falling Edge Input  
tri  
tfi  
tri  
tfi  
--  
--  
--  
--  
ns  
ns  
ms  
ms  
--  
10  
*1: Possible to use 5.25 or 5.50V of I/O buffer in the open-drain systems and input buffer in the IDC and IDH systems.  
*2: The ambient temperature range is recommended for Tj = 0 to 80°C  
*3: The ambient temperature range is recommended for Tj = -40 to 125°C  
4
EPSON ELECTRONICS AMERICA, INC.  
150 River Oaks Pkwy  
San Jose, CA 95134  
Tel: (408) 922-0200  
Fax: (408) 922-0238  
DATA SHEET  
ASIC  
S1L50000  
Recommended Operating Conditions (For Dual Power Supplies):  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Power Supply Voltage (High Voltage)  
HVDD  
4.75  
5.00  
5.25  
V
4.50  
5.00  
3.30  
--  
5.50  
3.60  
HVDD  
LVDD  
70*2  
85*3  
50  
Power Supply Voltage (Low Voltage)  
Input Voltage  
LVDD  
HVI  
LVI  
Ta  
3.00  
VSS  
VSS  
0
-40  
--  
V
V
*1  
--  
Ambient Temperature  
25  
25  
--  
°C  
Normal Input for Rising Edge Input  
Normal Input for Falling Edge Input  
Schmitt Input for Rising Edge Input  
Schmitt Input for Falling Edge Input  
tri  
tri  
tri  
tri  
ns  
ns  
ms  
ms  
--  
--  
--  
--  
--  
--  
50  
5
5
*1: Possible to use 5.25 or 5.50V of I/O buffer in the open-drain systems and input buffer in the LIDC and LIDH systems.  
*2: The ambient temperature range is recommended for Tj = 0 to 80°C  
*3: The ambient temperature range is recommended for Tj = -40 to 125°C  
Recommended Operating Conditions (For Dual Power Supplies):  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Power Supply Voltage (High Voltage)  
Power Supply Voltage (Low Voltage)  
Input Voltage  
HVDD  
3.00  
3.30  
2.00  
--  
3.60  
V
V
V
LVDD  
HVI  
LVI  
Ta  
1.80  
VSS  
VSS  
0
-40  
--  
--  
--  
--  
--  
2.20  
HVDD  
LVDD  
70*1  
85*2  
50  
100  
50  
100  
5
--  
Ambient Temperature  
25  
25  
--  
--  
--  
--  
--  
--  
--  
°C  
ns  
Normal Input for Rising Edge Input  
Normal Input for Falling Edge Input  
Schmitt Input for Rising Edge Input  
Schmitt Input for Falling Edge Input  
Htri  
Ltri  
Htfi  
Ltfi  
Htri  
Ltri  
Htfi  
Ltfi  
ns  
ms  
ms  
--  
--  
--  
10  
5
10  
--  
*1: Possible to use 5.25 or 5.50V of I/O buffer in the open-drain systems and input buffer in the LIDC and LIDH systems or HIDC and  
HIDH systems.  
*2: The ambient temperature range is recommended for Tj = 0 to 80°C  
*3: The ambient temperature range is recommended for Tj = -40 to 125°C  
EPSON ELECTRONICS AMERICA, INC. 150 River Oaks Pkwy San Jose, CA 95134 Tel: (408) 922-0200 Fax: (408) 922-0238  
5
DATA SHEET  
ASIC  
S1L50000  
Electrical Characteristics of the S1L50000 Series:  
(VDD = 5.0V, VSS = 0V, Ta = -40 to 85°C)  
Item  
Symbol  
Conditions  
Min Typ Max Unit  
Input Leakage Current  
Off State Leakage Current  
High Level Output Voltage  
ILI  
--  
--  
-1  
--  
--  
--  
1
1
--  
µA  
µA  
V
IOZ  
VOH  
-1  
IOH = -0.1mA (Type S), -1mA (Type M), HVDD  
-3mA (Type 1), -8mA (Type 2), -12mA  
(Type 3, Type 4)  
-0.4  
VDD = Min  
Low Level Output Voltage  
VOL  
IOL = 0.1mA (Type S), 1mA (Type M),  
3mA (Type 1), 8mA (Type 2), 12mA  
(Type 3), 24mA (Type 4)  
VDD = Min  
--  
--  
0.4  
V
High Level Input Voltage  
Low Level Input Voltage  
High Level Input Voltage  
Low Level Input Voltage  
Hysteresis Voltage  
High Level Input Voltage  
Low Level Input Voltage  
High Level Input Voltage  
Low Level Input Voltage  
Hysteresis Voltage  
VIH1  
VIL1  
VT1+  
VT1-  
VH1  
VIH2  
VIL2  
VT2+  
VT2-  
VH2  
CMOS Level, HVDD = Max  
CMOS Level, HVDD = Min  
CMOS Schmitt  
CMOS Schmitt  
CMOS Schmitt  
TTL Level, HVDD = Max  
TTL Level, HVDD = Min  
TTL Schmitt  
TTL Schmitt  
TTL Schmitt  
3.5  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
V
V
V
V
V
V
V
V
V
V
V
V
1.0  
4.0  
3.1  
--  
2.0  
0.8  
0.3  
2.0  
--  
1.2  
0.6  
0.1  
2.0  
--  
--  
0.8  
2.4  
1.8  
--  
--  
0.8  
High Level Input Voltage  
Low Level Input Voltage  
High Level Output Current  
VIH3  
VIL3  
IOH3  
PCI Level, HVDD = Max  
PCI Level, HVDD = Min  
PCI Response,  
VOH = 1.4V, HVDD = Min  
VOH = 3.1V, HVDD = Max  
PCI Response  
VOH = 2.20V, HVDD = Min  
VOL = 0.71V, HVDD = Max  
-44  
--  
--  
--  
--  
-142  
mA  
mA  
Low Level Output Current  
Pull-up Resistance*  
IOL3  
95  
--  
30  
--  
--  
60  
--  
mA  
mA  
206  
(120)  
144  
(240)  
288  
(120)  
144  
(240)  
288  
-80  
RPU  
VI = 0V  
Type 1  
Type 2  
Type 1  
Type 2  
KΩ  
60  
30  
60  
--  
120  
60  
120  
--  
Pull-down Resistance*  
RPD  
VI = VDD  
KΩ  
High Level Maintenance Current  
Low Level Maintenance Current  
High Level Reversal Current  
Low Level Reversal Current  
IBHH  
Bus Hold Response, VIN = 2.0V  
(TTL) HVDD = Min  
Bus Hold Response, VIN = 0.8V  
(TTL) HVDD = Min  
Bus Hold Response, VIN = 0.8V  
(TTL) HVDD = Max  
Bus Hold Response, VIN = 2.0V  
µA  
µA  
µA  
µA  
IBHL  
--  
--  
33  
--  
IBHHO  
IBHLO  
-550  
330  
--  
--  
--  
(TTL)  
HVDD = Max  
Input Terminal Capacitance  
Output Terminal Capacitance  
Input/Output Terminal  
Capacitance  
CI  
CO  
CIO  
f = 1Mhz, VDD = 0V  
f = 1Mhz, VDD = 0V  
f = 1Mhz, VDD = 0V  
--  
--  
--  
--  
--  
--  
10  
10  
10  
pF  
pF  
pF  
*
The values in parentheses are for the case of Ta = 0 to 70°C.  
6
EPSON ELECTRONICS AMERICA, INC.  
150 River Oaks Pkwy  
San Jose, CA 95134  
Tel: (408) 922-0200  
Fax: (408) 922-0238  
DATA SHEET  
ASIC  
S1L50000  
Electrical Characteristics of the S1L50000 Series:  
(VDD = 3.3V ± 0.3V, VSS = 0V, Ta = -40 to 85°C)  
Item  
Symbol  
IDDS  
ILI  
IOZ  
VOH  
Conditions  
Quiescent Conditions  
Min Typ Max Unit  
Quiescent Current*  
--  
--  
--  
--  
--  
170  
µA  
µA  
µA  
V
Input Leakage Current  
Off State Leakage Current  
High Level Output Voltage  
--  
--  
-1  
-1  
1
1
IOH = -0.1mA (Type S), -1mA (Type VDD  
M), -2mA (Type 1), -6mA (Type 2), -0.4  
-12mA (Type 3, Type 4)  
--  
VDD = Min  
Low Level Output Voltage  
VOL  
IOL = 0.1mA (Type S), 1mA (Type  
M), 2mA (Type 1), 6mA (Type 2),  
12mA (Type 3), 24mA (Type 4)  
--  
--  
0.4  
V
VDD = Min  
High Level Input Voltage  
Low Level Input Voltage  
High Level Input Voltage  
Low Level Input Voltage  
Hysteresis Voltage  
High Level Input Voltage  
Low Level Input Voltage  
High Level Output Current  
VIH1  
VIL1  
VT1+  
VT1-  
VH1  
VIH3  
VIL3  
IOH3  
LVTTL Level, VDD = Max  
LVTTL Level, VDD = Min  
LVTTL Schmitt  
LVTTL Schmitt  
LVTTL Schmitt  
PCI Level, VDD = Max  
PCI Level, VDD = Min  
PCI Response,  
2.0  
--  
1.1  
0.6  
0.1  
--  
--  
--  
--  
--  
--  
V
V
V
V
V
V
V
0.8  
2.4  
1.8  
--  
--  
0.98  
1.71 --  
--  
--  
V
V
OH = 0.90V, VDD = Min  
OH = 2.52V, VDD = Max  
-36  
--  
--  
--  
--  
-115  
mA  
mA  
Low Level Output Current  
Pull-up Resistance**  
IOL3  
PCI Response  
V
V
OH = 1.80V, VDD = Min  
OL = 2.52V, VDD = Max  
48  
--  
20  
--  
--  
50  
--  
mA  
mA  
137  
(100)  
120  
(200)  
240  
(100)  
120  
(200)  
240  
-20  
RPU  
VI = 0V  
Type 1  
Type 2  
Type 1  
Type 2  
KΩ  
40  
20  
40  
--  
100  
50  
100  
--  
Pull-down Resistance**  
RPD  
VI = VDD  
KΩ  
High Level Maintenance  
Current  
Low Level Maintenance  
Current  
IBHH  
Bus Hold Response,  
IN = 2.0V, VDD = Min  
Bus Hold Response,  
IN = 0.8V, VDD = Min  
Bus Hold Response,  
IN = 0.8V, VDD = Max  
Bus Hold Response,  
IN = 2.0V, VDD = Max  
µA  
µA  
µA  
µA  
V
IBHL  
--  
--  
17  
--  
V
High Level Reversal Current  
IBHHO  
IBHLO  
-350 --  
210 --  
V
Low Level Reversal Current  
--  
V
Input Terminal Capacitance  
Output Terminal Capacitance  
Input/Output Terminal  
Capacitance  
CI  
CO  
CIO  
f = 1Mhz, VDD = 0V  
f = 1Mhz, VDD = 0V  
f = 1Mhz, VDD = 0V  
--  
--  
--  
--  
--  
--  
10  
10  
10  
pF  
pF  
pF  
*
The quiescent current is a typical value (Tj=85°C) for each master.  
** The values in parentheses are for the case of Ta = 0 to 70°C.  
EPSON ELECTRONICS AMERICA, INC. 150 River Oaks Pkwy San Jose, CA 95134 Tel: (408) 922-0200 Fax: (408) 922-0238  
7
DATA SHEET  
ASIC  
S1L50000  
Electrical Characteristics of the S1L50000 Series:  
(VDD = 2.0V ± 0.2V, VSS = 0V, Ta = -40 to 85°C)  
Item  
Symbol  
IDDS  
ILI  
IOZ  
VOH  
Conditions  
Quiescent Conditions  
Min Typ Max Unit  
Quiescent Current*  
--  
--  
--  
--  
--  
150  
µA  
µA  
µA  
V
Input Leakage Current  
Off State Leakage Current  
High Level Output Voltage  
--  
--  
-1  
1
-1  
1
IOH = -0.05mA (Type S), -0.3mA  
(Type M), -0.6mA (Type 1), -2mA  
(Type 2), -4mA (Type 3, Type 4)  
VDD  
-0.2  
--  
VDD = Min  
Low Level Output Voltage  
VOL  
IOL = 0.05mA (Type S), 0.3mA  
(Type M), 0.6mA (Type 1), 2mA  
(Type 2), 4mA (Type 3), 8mA  
(Type 4)  
--  
--  
0.2  
V
VDD = Min  
High Level Input Voltage  
Low Level Input Voltage  
High Level Input Voltage  
Low Level Input Voltage  
Hysteresis Voltage  
VIH1  
VIL1  
VT1+  
VT1-  
VH1  
CMOS Level, VDD = Max  
CMOS Level, VDD = Min  
CMOS Schmitt  
CMOS Schmitt  
CMOS Schmitt  
1.6  
--  
0.4  
0.3  
0
--  
--  
--  
--  
--  
V
V
V
V
V
0.3  
1.6  
1.4  
--  
--  
Pull-up Resistance  
RPU  
VI = 0V  
Type 1  
30  
60  
30  
60  
--  
120  
240  
120  
240  
--  
300  
Type 2  
Type 1  
Type 2  
600  
300  
600  
KΩ  
Pull-down Resistance  
RPD  
VI = VDD  
KΩ  
µA  
High Level Maintenance  
Current  
Low Level Maintenance  
Current  
IBHH  
IBHL  
IBHHO  
IBHLO  
Bus Hold Response,  
IN = 1.6V, VDD = Min  
Bus Hold Response,  
IN = 0.3V, VDD = Min  
-2  
V
--  
--  
2
µA  
µA  
µA  
V
High Level Reversal Current  
Bus Hold Response,  
VIN = 0.3V, VDD = Max  
Bus Hold Response,  
VIN = 1.6V, VDD = Max  
f = 1Mhz, VDD = 0V  
f = 1Mhz, VDD = 0V  
f = 1Mhz, VDD = 0V  
-100 --  
100 --  
--  
--  
Low Level Reversal Current  
Input Terminal Capacitance  
Output Terminal Capacitance  
Input/Output Terminal  
Capacitance  
CI  
CO  
CIO  
--  
--  
--  
--  
--  
--  
10  
10  
10  
pF  
pF  
pF  
*
The quiescent current is a typical value (Tj=85°C) for each master.  
8
EPSON ELECTRONICS AMERICA, INC.  
150 River Oaks Pkwy  
San Jose, CA 95134  
Tel: (408) 922-0200  
Fax: (408) 922-0238  
DATA SHEET  
ASIC  
S1L50000  
GATE ARRAY DEVELOPMENT FLOW  
CUSTOMER  
EEA  
Product Plan  
Functional Spec.  
Logical Check  
(Simulation)  
G/A Development  
Request  
Schematic Pin  
Assignment  
NG  
Verification  
OK  
*
Circuit Design  
Test Pattern Design  
Test pattern (timing chart)  
Timing wave form  
Marking diagram  
P/O  
1
Logical Check  
(Simulation)  
Timing Check  
(Simulation)  
2
Delay Analyzing  
G/A Development  
Request  
Refer to Note  
NG  
NG  
EWS  
OK  
Verification  
Verification  
OK  
*
Schematic  
Pin assignment  
Simulation  
File  
Timing wave form  
Marking diagram  
P/O  
Place & Route  
Delay Analyzing  
Post Simulation  
Simulation List  
NG  
Verification  
OK  
Make Masks  
Customer Spec.  
(Sign Off)  
TS (Test Sample)  
Fabrication  
NG  
Check  
OK  
ES (Engr. Sample)  
Fabrication  
NG  
Check  
OK  
ES(TS) Proto.  
Approval  
MP Setup  
ET(TS) Approve  
the Prototype  
Delivery Spec.  
Publication  
Delivery Spec.  
Approve Delivery  
Spec.  
Delivery Spec.  
Approval  
MP  
* Jobs are done by customer and EEA engineer. Steps in shadowed boxes are based on customer’s requirement.  
NOTE:  
When the customer performs all tasks to the point of logical simulations and delay simulations on engineering workstations, etc.,  
the route taken is (2, Joint Design). When EEA performs the logical simulations, the route taken is (1, Turnkey Design).  
EPSON ELECTRONICS AMERICA, INC. 150 River Oaks Pkwy San Jose, CA 95134 Tel: (408) 922-0200 Fax: (408) 922-0238  
9
DATA SHEET  
ASIC  
S1L50000  
Œ
EEA CUSTOMER ENGINEERING  
To help customers implement their design of EEA ASIC’s, we offer training at our design centers  
and at customer sites when required.  
When a design is started, an EEA engineer is assigned to the project and will remain with the  
project through its completion. EEA engineers will work with the customer on design, software and  
other technical issues. When the design files are transferred to EEA, the assigned engineer will  
verify the design’s integrity and prepare it for place and route. The EEA Customer Engineering  
Group provides all technical customer-support services including:  
Pre-Sale Technical Support  
Customer Training  
Design Assistance  
Custom Cell Development  
Place and Route  
Scan Insertion and ATPG  
Netlist Conversion and Synthesis  
Software Documentation  
Simulation Support  
Turnkey Design  
Design Verification  
Static Timing Analysis  
JTAG Insertion  
Test Vector Conversion  
Œ
EDA/CAE SUPPORT  
Schematic Capture  
Œ
Œ
Viewlogic (Synopsys): Viewdraw  
EEA: Auklet (ECS)  
Synthesis  
Œ
Œ
Synopsys: DesignCompiler  
Exemplar Logic: Leonardo  
Simulation  
Œ
Œ
Œ
Œ
Œ
Cadence: Verilog-XL  
Synopsys: VSS (VHDL)  
Avant!: Polaris (Purespeed)  
Viewlogic (Synopsys): Viewsim  
Modeltech: V-System (VHDL)  
DFT  
Œ
Œ
Synopsys: TestCompiler+  
Viewlogic (Synopsys): TestGen (Sunrise)  
Place & Route  
Œ
Œ
Cadence: GateEnsemble  
Avant!: Aquarius-GA (Apollo)  
Delay Calculation (Post-Route)  
EEA: Peacock (EXDT)  
Œ
10  
EPSON ELECTRONICS AMERICA, INC.  
150 River Oaks Pkwy  
San Jose, CA 95134  
Tel: (408) 922-0200  
Fax: (408) 922-0238  
DATA SHEET  
ASIC  
S1L50000  
Œ
EDA/CAE SUPPORT (continued)  
Static Timing  
Œ
Œ
Synopsys: PrimeTime (DesignTime)  
Viewlogic (Synopsys): Motive  
Layout Verification  
Cadence: Dracula/LVS  
Œ
EPSON ELECTRONICS AMERICA, INC. 150 River Oaks Pkwy San Jose, CA 95134 Tel: (408) 922-0200 Fax: (408) 922-0238  
11  
DATA SHEET  
ASIC  
S1L50000  
NOTICE  
No part of this material may be reproduced or duplicated in any form or by any means without the written permission of EPSON  
ELECTRONICS AMERICA, INC.. EEA reserves the right to make changes to this material without notice. EEA does not assume any liability  
of any kind arising out of any inaccuracies contained in this material or due to its application or use in any product or circuit and, further, there  
is no representation that this material is applicable to products requiring high level reliability, such as, medical products. Moreover, no license  
to any intellectual property rights is granted by implication or otherwise, and there is no representation or warranty that anything made in  
accordance with this material will be free from any patent or copyright infringement of a third party. This material or portions there of may  
contain technology or the subject relating to strategic products under the control of the Foreign Exchange and Foreign Trade Control Law of  
Japan and may require an export license from the Ministry of International Trade and Industry or other approval from another government  
agency.  
EPSON implies SEIKO EPSON CORPORATION and EPSON affiliated company.  
EPSON ELECTRONICS AMERICA, INC. 1999 All Rights Reserved, Rev. 2.3  
Trademark & Company Name  
XNF is registered trademark of Synopsys Inc. All other product names mentioned herein are trademarks and/or registered trademarks of their  
respective owners.  
For additional information about EEA ASIC products and services, or to discuss a solution tailored to your specific requirements, call your local  
EEA sales office or contact the factory.  
Northwest Regional  
Sales Office & Design Center Sales Office & Design Center Sales Office  
Northeast Regional  
Southeast Regional  
Central Regional  
Sales Office  
http://www.eea.epson.com  
12  
EPSON ELECTRONICS AMERICA, INC.  
150 River Oaks Pkwy  
San Jose, CA 95134  
Tel: (408) 922-0200  
Fax: (408) 922-0238  

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