BLV9N60 [ESTEK]
N-channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | BLV9N60 |
| 厂家： | 
Estek Electronics Co. Ltd |
| 描述： | N-channel Enhancement Mode Power MOSFET |
| 文件： | 总6页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLV9N60
N-channel Enhancement Mode Power MOSFET
BVDSS
RDS(ON)
ID
600V
1.0Ω
8.5A
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply
.
Absolute Maximum Ratings
(
TC=25oC unless otherwise noted )
Symbol
Parameter
Drain-Source Voltage
Value
Units
VDS
VGS
600
+ 20
V
V
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC
Drain Current (pulsed) (Note 1)
Power Dissipation
8.5
A
ID
)
5.5
A
IDM
PD
34
A
125
W
Linear Derating Factor
1.0
W/
℃
EAS
IAR
Single Pulsed Avalanche Energy (Note2)
Avalanche Current
667
mJ
A
8.5
EAR
Tj
Repetitive Avalanche Energy
Operating Junction Temperature Range
Storage Temperature Range
12.5
mJ
oC
oC
-55 to +150
-55 to +150
TSDG
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to case
Value
1.0
Units
℃/ W
℃/ W
Rth j-c
Rth j-a
Max.
Thermal Resistance, Junction to Ambient Max.
62.5
- 1 -
Total 6 Pages
BLV9N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics
( TC=25C unless otherwise noted )
Symbol
Test Conditions
Min.
Typ.
Max. Units
Parameter
BVDSS
VGS=0V, ID=250uA
Drain-Source Breakdown Voltage
600
-
-
-
V
Reference to 25
℃,
∆BVDSS
/∆TJ
Breakdown Voltage
Temperature Coefficient
-
0.6
V/℃
ID=250uA
RDS(ON)
VGS(th)
g fs
VGS=10V, ID=5A
Static Drain-Source On-Resistance
Gate Threshold Voltage
-
2
-
-
-
1.0
4
Ω
V
VDS=VGS, ID=250uA
VDS=15V, ID=5A
Forward Transconductance(note3)
5
-
-
S
IDSS
VDS=600V, VGS=0V
Drain-Source Leakage Current
Drain-Source Leakage Current
-
1
uA
V =480V V =0V
,
-
-
100
uA
DS
GS
Tc=125℃
IGSS
VGS= ± 20V
Gate-Source Leakage Current
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
-
-
42
9.5
16.4
-
±100
nA
nC
nC
nC
ns
Q
g
VDD=480V
ID=8.5A
VGS=10V
note3
-
Q
gs
Gate-Source Charge
Gate-Drain Charge
-
-
Q
gd
t (on)
t r
t (off)
t f
Turn-on Delay Time
Turn-on Rise Time
70
170
140
130
-
VDD=300V
ID=8.5A
RG=25Ω
note3
-
ns
Turn-off Delay Time
Turn-off Fall Time
-
ns
-
ns
C
Input Capacitance
1253
184
84
pF
pF
pF
iss
VDS=25V
VGS=0V
f = 1MHz
C
Output Capacitance
Reverse Transfer Capacitance
-
oss
C
-
rss
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
A
A
IS
Continuous Source Diode Forward Current
8.5
34
1.7
-
-
-
-
-
-
-
-
Pulsed Source Diode Forward Current (note1)
ISM
VSD
t r r
Forward On Voltage
VGS=0V, IS=8.5A
VGS=0V, IS=8.5A
V
-
Reverse Recovery Time
Reverse Recovery Charge
ns
uC
1190
3.7
Qr r
dI /dt = 100A/us
F
-
Note：
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) L=25mH, Ias=8.5A，Vdd=50V，Rg=25Ω，staring Tj=25C
(3) Pulse width ≤ 300 us; duty cycle ≤ 2%
- 2 -
Total 6 Pages
BLV9N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Transfer Characteristics
Fig 3. Normalized BVdss vs. Junction
Temperature
Fig 4. Normalized On-Resistance vs.
Junction Temperature
- 3 -
Total 6 Pages
BLV9N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics （continued）
Fig 5. On-Resistance Variation vs.
Drain Current and Gate Voltage
Fig 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Fig 7. Gate Charge Characteristics
Fig 8. Capacitance Characteristics
- 4 -
Total 6 Pages
BLV9N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics （continued）
Fig 9. Maximum Safe Operating Area
Fig 10. Transient Thermal Response Curve
- 5 -
Total 6 Pages
BLV9N60
N-channel Enhancement Mode Power MOSFET
Test Circuit and Waveform
Fig 11. Gate Charge Circuit
Fig 12. Gate Charge Waveform
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Unclamped Inductive
Switching Test Circuit
Fig 16. Unclamped Inductive
Switching Waveforms
- 6 -
Total 6 Pages
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