15N120NDA [ETC]
; - 12号的铝制车身绘（ RAL 7032 ）
| 型号： | 15N120NDA |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总6页 (文件大小：1007K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KGH15N120NDA
TECHNICAL DATA
General Description
A
N
O
KEC NPT IGBTs offer lowest losses and highest energy efficiency for
application such as IH (induction heating), UPS, General inverter and other
soft switching applications.
B
Q
K
MILLIMETERS
_
DIM
A
+
15.60 0.20
_
B
C
D
d
+
4.80 0.20
_
+
19.90 0.20
_
2.00 0.20
+
FEATURES
_
+
1.00 0.20
High speed switching
_
E
+
3.00 0.20
_
+
3.80 0.20
F
G
H
I
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
_
3.50 + 0.20
D
E
_
13.90 0.20
+
_
12.76 0.20
+
_
J
23.40 + 0.20
M
K
L
M
d
1.5+0.15-0.05
_
16.50 + 0.30
_
+
1.40 0.20
_
13.60 + 0.20
N
O
P
P
P
T
_
+
9.60 0.20
_
+
5.45 0.30
_
Q
3.20 0.10
+
1
2
3
_
+
R
T
18.70 0.20
0.60+0.15-0.05
1. GATE
2. COLLECTOR
3. EMITTER
TO-3P(N)-E
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
Collector-Emitter Voltage
Gate-Emitter Voltage
SYMBOL RATING UNIT
C
VCES
VGES
1200
V
V
A
A
A
A
A
W
W
20
24
@TC=25
G
IC
Collector Current
15
@TC=100
ICM
IF
IFM
*
Pulsed Collector Current
45
E
Diode Continuous Forward Current
Diode Maximum Forward Current
15
@TC=100
45
200
@TC=25
PD
Maximum Power Dissipation
80
@TC=100
Tj
Maximum Junction Temperature
Storage Temperature Range
150
Tstg
-55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
SYMBOL
MAX.
0.6
UNIT
/W
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
R
JC
2.8
R
/W
JC
2008. 6. 30
Revision No : 0
1/6
KGH15N120NDA
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
BVCES
ICES
VGE=0V , IC=3mA
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Dynamic
1200
-
-
-
V
mA
nA
V
VGE=0V, VCE=1200V
-
-
3
IGES
-
VCE=0V, VGE
=
20V
100
7.5
VGE(th)
VCE(sat)
VGE=VCE, IC=15mA
VGE=15V, IC=15A
3.5
-
5.5
2.4
2.9
V
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
VCC=600V, VGE=15V, IC= 15A
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
65
50
60
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
250
70
ns
VCC=600V, IC=15A, VGE=15V,RG=15
Inductive Load, TC = 25
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
2.5
0.5
3.0
60
mJ
mJ
mJ
ns
td(on)
tr
td(off)
tf
70
ns
Turn-Off Delay Time
Fall Time
250
70
ns
VCC=600V, IC=25A, VGE=15V, RG=15
Inductive Load, TC = 125
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
2.8
0.6
3.4
1400
140
57
mJ
mJ
mJ
pF
pF
pF
Cies
Coes
Cres
Ouput Capacitance
VCE=30V, VGE=0V, f=1MHz
Reverse Transfer Capacitance
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
1.6
MAX.
UNIT
V
-
-
-
-
-
-
2.5
-
TC=25
VF
IF = 15A
Diode Forward Voltage
1.7
TC=125
TC=25
200
280
27
300
-
trr
Diode Reverse Recovery Time
ns
A
TC=125
TC=25
IF = 15A
35
-
di/dt = 200A/ s
Irr
Diode Peak Reverse Recovery Current
32
TC=125
2008. 6. 30
Revision No : 0
2/6
KGH15N120NDA
2008. 6. 30
Revision No : 0
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KGH15N120NDA
2008. 6. 30
Revision No : 0
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KGH15N120NDA
2008. 6. 30
Revision No : 0
5/6
KGH15N120NDA
2008. 6. 30
Revision No : 0
6/6
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