1720-2 [ETC]
BJT ; BJT\n
| 型号： | 1720-2 |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1720 - 2
2 Watt - 28 Volts, Class C
Microwave 1700 - 2000 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 1720-2 is a COMMON BASE transistor capable of providing 2 Watts of
Class C, RF output power over the band 1700-2000 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input prematching and utilizes Gold metalization and diffused ballasting to
provide high reliagility and supreme ruggedness.
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
11.6 Watts
Maximum Voltage and Current
BVces
BVebo
Ic
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
50 Volts
3.5 Volts
0.5 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to +150oC
+200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
2.0
7.5
Watt
Watt
dB
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2.0 GHz
Pout
Pin
Pg
0.35
10:1
Vcb = 28 Volts
Pin =.35 Watts
As Above
35
%
ηc
VSWR1
F = 2.0GHz, Pin = .35
Collector to Emitter Breakdown Ic = 20 mA
50
3.5
10
Volts
Volts
mA
BVces
BVebo
HFE
Emitter to Base Breakdown
Current Gain
Ie = 0.25 mA
Vce = 5 V, Ic = 100 mA
F =1.0 MHz, Vcb = 28 V
Output Capacitance
Thermal Resistance
4.5
pF
Cob
15
oC/W
θjc
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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