1N6301ARL4 [ETC]

1500 Watt Mosorb TM Zener Transient Voltage Suppressors; 1500瓦Mosorb TM齐纳瞬态电压抑制器


型号：	1N6301ARL4
厂家：	ETC
描述：	1500 Watt Mosorb TM Zener Transient Voltage Suppressors 1500瓦Mosorb TM齐纳瞬态电压抑制器瞬态抑制器二极管局域网
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1N6267A Series

1500 Watt Mosorbt Zener

Transient Voltage

Suppressors

Unidirectional*

http://onsemi.com

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high−energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

Cathode

Anode

AXIAL LEAD

CASE 41A

PLASTIC

Features

MARKING DIAGRAM

• Working Peak Reverse Voltage Range − 5.8 V to 214 V

• Peak Power − 1500 Watts @ 1 ms

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

• UL 497B for Isolated Loop Circuit Protection

• Response Time is Typically < 1 ns

• Pb−Free Packages are Available

1.5KE

xxxA

1N6

xxxA

YYWWG

= Assembly Location

1.5KExxxA

1N6xxxA

= ON Device Code

= JEDEC Device Code

= Year

= Work Week

Mechanical Characteristics

= (See Table on Page 3)

= Pb−Free Package

(Note: Microdot may be in either location)

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16 in from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

ORDERING INFORMATION

†

Device

1.5KExxxA

1.5KExxxAG

Package

Shipping

Axial Lead

500 Units/Box

Axial Lead

(Pb−Free)

1.5KExxxARL4

Axial Lead 1500/Tape & Reel

1.5KExxxARL4G Axial Lead 1500/Tape & Reel

(Pb−Free)

1N6xxxA

Axial Lead

500 Units/Box

1N6xxxAG

Axial Lead

(Pb−Free)

1N6xxxARL4

Axial Lead 1500/Tape & Reel

1N6xxxARL4G

Axial Lead 1500/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

February, 2007 − Rev. 8

1N6267A/D

1N6267A Series

MAXIMUM RATINGS

Rating

Symbol

Value

1500

5.0

Unit

Peak Power Dissipation (Note 1) @ T ≤ 25°C

Steady State Power Dissipation

@ T ≤ 75°C, Lead Length = 3/8 in

Derated above T = 75°C

mW/°C

°C/W

Thermal Resistance, Junction−to−Lead

Forward Surge Current (Note 2) @ T = 25°C

200

FSM

Operating and Storage

Temperature Range

T , T

− 65 to +175

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.

2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices

ELECTRICAL CHARACTERISTICS (T = 25°C unless

otherwise noted, V = 3.5 V Max., I (Note 3) = 100 A)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

Working Peak Reverse Voltage

RWM

BR RWM

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Maximum Temperature Coefficient of V

Forward Current

Forward Voltage @ I

Uni−Directional TVS

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1N6267A Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I (Note 3) = 100 A)

Breakdown Voltage

(Note 6) (Volts)

V @ I (Note 7)

C PP

RWM

JEDEC

Device

@ I

(Note 5)

@ V

RWM

†

(Volts)

(mA)

Min

Nom

Max

(mA)

(Volts)

(A)

(%/°C)

(Note 4)

Device

1.5KE6.8A, G

1.5KE7.5A, G

1.5KE8.2A, G

1.5KE9.1A, G

1N6267A, G

1N6268A, G

1N6269A, G

1N6270A, G

5.8

6.4

7.02

7.78

1000

500

200

6.45

7.13

7.79

8.65

6.8

7.5

8.2

9.1

7.14

7.88

8.61

9.55

10.5

11.3

12.1

13.4

143

132

124

112

0.057

0.061

0.065

0.068

1.5KE10A, G

1.5KE11A, G

1.5KE12A, G

1.5KE13A, G

1N6271A, G

1N6272A, G

1N6273A, G

1N6274A, G

8.55

9.4

10.2

11.1

9.5

10.5

11.6

12.6

13.7

14.5

15.6

16.7

18.2

103

0.073

0.075

0.078

0.081

10.5

11.4

12.4

1.5KE15A, G

1.5KE16A, G

1.5KE18A, G

1.5KE20A, G

1N6275A, G

1N6276A, G

1N6277A, G

1N6278A, G

12.8

13.6

15.3

17.1

14.3

15.2

17.1

15.8

16.8

18.9

21.2

22.5

25.2

27.7

59.5

0.084

0.086

0.088

0.09

1.5KE22A, G

1.5KE24A, G

1.5KE27A, G

1.5KE30A, G

1N6279A, G

1N6280A, G

1N6281A, G

1N6282A, G

18.8

20.5

23.1

25.6

20.9

22.8

25.7

28.5

23.1

25.2

28.4

31.5

30.6

33.2

37.5

41.4

0.092

0.094

0.096

0.097

1.5KE33A, G

1.5KE36A, G

1.5KE39A, G

1.5KE43A, G

1N6283A, G

1N6284A, G

1N6285A, G

1N6286A, G

28.2

30.8

33.3

36.8

31.4

34.2

37.1

40.9

34.7

37.8

45.7

49.9

53.9

59.3

0.098

0.099

0.1

45.2

25.3

0.101

1.5KE47A, G

1.5KE51A, G

1.5KE56A, G

1.5KE62A, G

1N6287A, G

1N6288A, G

1N6289A, G

1N6290A, G

40.2

43.6

47.8

44.7

48.5

53.2

58.9

49.4

53.6

58.8

65.1

64.8

70.1

23.2

21.4

19.5

17.7

0.101

0.102

0.103

0.104

1.5KE68A, G

1.5KE75A, G

1.5KE82A, G

1.5KE91A, G

1N6291A, G

1N6292A, G

1N6293A, G

1N6294A, G

58.1

64.1

70.1

77.8

64.6

71.3

77.9

86.5

71.4

78.8

86.1

95.5

16.3

14.6

13.3

0.104

0.105

0.106

103

113

125

1.5KE100A, G

1.5KE110A, G

1.5KE120A, G

1.5KE130A, G

1N6295A, G

1N6296A, G

1N6297A, G

1N6298A, G

85.5

102

111

100

110

120

130

105

116

126

137

152

165

179

0.106

0.107

105

114

124

9.9

9.1

8.4

1.5KE150A, G

1.5KE160A, G

1.5KE170A, G

1.5KE180A, G

1N6299A, G

1N6300A, G

1N6301A, G

1N6302A, G*

128

136

145

154

143

152

162

171

150

160

170

180

158

168

179

189

207

219

234

246

7.2

6.8

6.4

6.1

0.108

1.5KE200A, G

1.5KE220A, G

1.5KE250A, G

1N6303A, G

171

185

214

190

209

237

200

220

250

210

231

263

274

328

344

5.5

4.6

0.108

0.109

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

4. Indicates JEDEC registered data

5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V ), which should be equal to or

RWM

greater than the dc or continuous peak operating voltage level.

6. V measured at pulse test current I at an ambient temperature of 25°C

7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

†The “G” suffix indicates Pb−Free package available.

*Not Available in the 1500/Tape & Reel

http://onsemi.com

1N6267A Series

100

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 5

100

0.1ꢀms

1ꢀms

10ꢀms

100ꢀms

1 ms

10 ms

100 125 150 175 200

T , AMBIENT TEMPERATURE (°C)

t , PULSE WIDTH

Figure 1. Pulse Rating Curve

Figure 2. Pulse Derating Curve

1N6373, ICTE-5, MPTE-5,

through

1N6267A/1.5KE6.8A

through

1N6389, ICTE-45, C, MPTE-45, C

1N6303A/1.5KE200A

10,000

1000

10,000

MEASURED @

ZERO BIAS

MEASURED @

ZERO BIAS

1000

100

MEASURED @ V

RWM

MEASURED @ V

RWM

100

1000

100

1000

, BREAKDOWN VOLTAGE (VOLTS)

Figure 3. Capacitance versus Breakdown Voltage

PULSE WIDTH (t ) IS DEFINED AS

THAT POINT WHERE THE PEAK

3/8″

CURRENT DECAYS TO 50% OF I

tr ≤ 10ꢀms

PEAK VALUE − I

100

3/8″

HALF VALUE −

t, TIME (ms)

100 125 150 175

200

T , LEAD TEMPERATURE (°C)

Figure 4. Steady State Power Derating

Figure 5. Pulse Waveform

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1N6267A Series

1N6373, ICTE-5, MPTE-5,

through

1.5KE6.8CA

through

1N6389, ICTE-45, C, MPTE-45, C

1.5KE200CA

1000

500

1000

ꢀ=ꢀ6.8 to 13ꢀV

20ꢀV

BR(NOM)

T ꢀ=ꢀ25°C

t ꢀ=ꢀ10ꢀms

500

20ꢀV

24ꢀV

43ꢀV

75ꢀV

43ꢀV

24ꢀV

200

100

200

100

180ꢀV

120ꢀV

0.3

0.5 0.7

20 30

(VOLTS)

0.3

DV , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS)

BR(NOM)

0.5 0.7

20 30

DV , INSTANTANEOUS INCREASE IN V ABOVE V

BR BR

BR(NOM)

Figure 6. Dynamic Impedance

0.7

0.5

0.3

0.2

PULSE WIDTH

10 ms

0.1

0.07

0.05

1 ms

0.03

0.02

100 ms

10 ms

0.01

0.1

0.2

0.5

50 100

D, DUTY CYCLE (%)

Figure 7. Typical Derating Factor for Duty Cycle

APPLICATION NOTES

RESPONSE TIME

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. These devices have

excellent response time, typically in the picosecond range

and negligible inductance. However, external inductive

effects could produce unacceptable overshoot. Proper

circuit layout, minimum lead lengths and placing the

suppressor device as close as possible to the equipment or

components to be protected will minimize this overshoot.

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitance

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 8.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 9. Minimizing this overshoot is very important in the

Some input impedance represented by Z is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves

of Figure 7. Average power must be derated as the lead or

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1N6267A Series

ambient temperature rises above 25°C. The average power

derating curve normally given on data sheets may be

normalized and used for this purpose.

At first glance the derating curves of Figure 7 appear to be

in error as the 10 ms pulse has a higher derating factor than

the 10 ms pulse. However, when the derating factor for a

given pulse of Figure 7 is multiplied by the peak power value

of Figure 1 for the same pulse, the results follow the

expected trend.

TYPICAL PROTECTION CIRCUIT

LOAD

(TRANSIENT)

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

(TRANSIENT)

t = TIME DELAY DUE TO CAPACITIVE EFFECT

Figure 8.

Figure 9.

UL RECOGNITION*

The entire series has Underwriters Laboratory

Recognition for the classification of protectors (QVGV2)

under the UL standard for safety 497B and File #E210057.

Many competitors only have one or two devices recognized

or have recognition in a non-protective category. Some

competitors have no recognition at all. With the UL497B

recognition, our parts successfully passed several tests

including Strike Voltage Breakdown test, Endurance

Conditioning, Temperature test, Dielectric Voltage-

Withstand test, Discharge test and several more.

Whereas, some competitors have only passed a

flammability test for the package material, we have been

recognized for much more to be included in their Protector

category.

*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA

CLIPPER BIDIRECTIONAL DEVICES

1. Clipper-bidirectional devices are available in the

1.5KEXXA series and are designated with a “CA”

suffix; for example, 1.5KE18CA. Contact your nearest

ON Semiconductor representative.

3. The 1N6267A through 1N6303A series are JEDEC

registered devices and the registration does not include

a “CA” suffix. To order clipper-bidirectional devices

one must add CA to the 1.5KE device title.

2. Clipper-bidirectional part numbers are tested in both

directions to electrical parameters in preceding table

(except for V which does not apply).

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1N6267A Series

OUTLINE DIMENSIONS

MOSORB

CASE 41A−04

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD FINISH AND DIAMETER UNCONTROLLED

IN DIMENSION P.

4. 041A−01 THRU 041A−03 OBSOLETE, NEW

STANDARD 041A−04.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

8.50

4.80

0.96

MAX

9.50

5.30

1.06

−−−

0.335

0.189

0.038

1.000

0.374

0.209

0.042

−−− 25.40

−−−

−−− 0.050

1.27

Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

1N6267A/D

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1N6301ARL4 [ETC]

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