2302A [ETC]
Daul N-Channel Enhancement Mode MOSFET; Daul N沟道增强型MOSFET
| 型号： | 2302A |
| 厂家： | 
ETC |
| 描述： | Daul N-Channel Enhancement Mode MOSFET |
| 文件： | 总1页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NK2302A
NANKER
N-Channel Enhancement Mode MOSFET
Feature
ꢀ
16V/3.6A,
RDS(ON) = 80mΩ(MAX) @VGS = 4.5V.
RDS(ON) = 90mΩ(MAX) @VGS = 2.5V.
ꢀ
ꢀ
ꢀ
Super High dense cell design for extremely low RDS(ON) .
Reliable and Rugged.
SC-59 for Surface Mount Package.
SC-59
Applications
●
Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
TA=25℃ Unless Otherwise noted
Symbol
VDS
Limit
16
Units
Drain-Source Voltage
V
V
A
Gate-Source Voltage
VGS
±8
Drain Current-Continuous
ID
3.6
Electrical Characteristics
TA=25℃ Unless Otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ.
Max
Units
Off Characteristics
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BVDSS
IDSS
VGS=0V, ID=250µA
VDS=12V, VGS=0V
VGS=8V, VDS=0V
VGS=-8V, VDS=0V
16
-
-
-
-
-
-
V
1
µA
nA
nA
IGSSF
IGSSR
-
100
-100
-
On Characteristics
Gate Threshold Voltage
Static Drain-source
On-Resistance
VGS(th)
VGS= VDS, ID=250µA
VGS =4.5V, ID =3.6A
VGS =2.5V, ID =3.1A
0.4
-
1.3
80
90
V
-
-
70
75
mΩ
mΩ
RDS(ON)
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=0.94A
1.2
V
Nanker Group
Headquarters:
Shenzhen Sales Office:
Tel: 0756-8128088
Fax: 0756-8889513
Tel: 0755-86022782, 86022783, 86022910
Website: www.nanker.com
Fax: 0755-86022774
E-mail: info@nanker.com
July 20, 2006
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