28LV64A-FT20/L [ETC]

x8 EEPROM ; X8 EEPROM\n
28LV64A-FT20/L
型号: 28LV64A-FT20/L
厂家: ETC    ETC
描述:

x8 EEPROM
X8 EEPROM\n

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总8页 (文件大小:116K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
28LV64A  
64K (8K x 8) Low Voltage CMOS EEPROM  
FEATURES  
PACKAGE TYPES  
• 2.7V to 3.6V Supply  
RDY/BSY  
A12  
A7  
• 1  
2
28 Vcc  
27 WE  
26 NC  
25 A8  
• Read Access Time—300 ns  
• CMOS Technology for Low Power Dissipation  
- 8 mA Active  
- 50 µA CMOS Standby Current  
• Byte Write Time—3 ms  
• Data Retention >200 years  
• High Endurance - Minimum 100,000 Erase/Write  
Cycles  
• Automatic Write Operation  
- Internal Control Timer  
3
A6  
4
A6  
A5  
A4  
A3  
A2  
A1 10  
A0 11  
NC 12  
I/O0 13  
5
6
7
8
9
29 A8  
28 A9  
A5  
5
24 A9  
A4  
6
23 A11  
22 OE  
21 A10  
20 CE  
19 I/O7  
18 I/O6  
17 I/O5  
16 I/O4  
15 I/O3  
27 A11  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
A3  
7
A2  
8
A1  
9
A0  
10  
11  
12  
13  
I/O0  
I/O1  
I/O2  
VSS 14  
-
Auto-Clear Before Write Operation  
• Pin 1 indicator on PLCC on top of package  
- On-Chip Address and Data Latches  
• Data Polling  
• Ready/Busy  
• Chip Clear Operation  
BLOCK DIAGRAM  
I/O0...................I/O7  
• Enhanced Data Protection  
- VCC Detector  
- Pulse Filter  
VSS  
VCC  
Data Protection  
Circuitry  
Chip Enable/  
Output Enable  
Control Logic  
CE  
- Write Inhibit  
OE  
• Electronic Signature for Device Identification  
• Organized 8Kx8 JEDEC Standard Pinout  
- 28-pin Dual-In-Line Package  
- 32-pin Chip Carrier (Leadless or Plastic)  
• Available for Extended Temperature Ranges:  
- Commercial: 0˚C to +70˚C  
- Industrial: -40˚C to +85˚C  
Auto Erase/Write  
Timing  
Data  
Poll  
WE  
Input/Output  
Buffers  
Rdy/  
Busy  
Program Voltage  
Generation  
A0  
Y
I
I
I
I
I
I
I
I
Y Gating  
Decoder  
L
a
t
c
h
e
s
64K bit  
Cell Matrix  
X
DESCRIPTION  
Decoder  
I
I
I
The Microchip Technology Inc. 28LV64A is a CMOS 64K non-vol-  
atile electrically Erasable PROM organized as 8K words by 8 bits.  
The 28LV64A is accessed like a static RAM for the read or write  
cycles without the need of external components. During a “byte  
write”, the address and data are latched internally, freeing the  
microprocessor address and data bus for other operations. Fol-  
lowing the initiation of write cycle, the device will go to a busy state  
and automatically clear and write the latched data using an inter-  
nal control timer. To determine when the write cycle is complete,  
the user has a choice of monitoring the Ready/Busy output or  
using Data polling. The Ready/Busy pin is an open drain output,  
which allows easy configuration in ‘wired-or’ systems. Alterna-  
tively, Data polling allows the user to read the location last written  
to when the write operation is complete. CMOS design and pro-  
cessing enables this part to be used in systems where reduced  
power consumption and reliability are required. A complete family  
of packages is offered to provide the utmost flexibility in applica-  
tions.  
A12  
1988 Microchip Technology Inc.  
Preliminary  
DS21113D-page 1  
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28LV64A  
TABLE 1-1:  
PIN FUCTION TABLE  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Name  
A0 - A12  
CE  
Function  
Address Inputs  
Chip Enable  
MAXIMUM RATINGS*  
VCC and input voltages w.r.t. VSS ......-0.6V to + 6.25V  
Voltage on OE w.r.t. VSS ......................-0.6V to +13.5V  
Voltage on A9 w.r.t. VSS.......................-0.6V to +13.5V  
Output Voltage w.r.t. VSS.................-0.6V to VCC+0.6V  
Storage temperature .......................... -65˚C to +150˚C  
Ambient temp. with power applied......-55°C to +125°C  
OE  
Output Enable  
Write Enable  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
RDY/Busy  
VCC  
Ready/Busy  
+ Power Supply  
*Notice: Stresses above those listed under “Maximum Ratings” may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at those or any other conditions  
above those indicated in the operation listings of this specification is  
not implied. Exposure to maximum rating conditions for extended  
periods may affect device reliability.  
VSS  
Ground  
NC  
No Connect; No Internal Connection  
NU  
Not Used; No External Connection is  
Allowed  
TABLE 1-2:  
READ/WRITE OPERATION DC CHARACTERISTICS  
VCC = 2.7 to 3.6V  
Commercial (C): Tamb = 0°C to 70°C  
Industrial  
(I): Tamb = -40°C to 85°C  
Parameter  
Status  
Symbol  
Min  
Max Units  
Conditions  
Input Voltages  
Logic “1”  
Logic “2”  
VIH  
VIL  
2.0  
V
V
0.6  
5
Input Leakage  
ILI  
µA VIN = 0V to VCC+1  
Input Capacitance  
CIN  
6
pF Vin = 0V; Tamb = 25°C;  
f = 1 MHz (Note 1)  
Output Voltages  
Logic “1”  
Logic “0”  
VOH  
VOL  
2.0  
V
V
IOH = -100µA  
IOL = 1.0 mA  
0.3  
I0L = 2.0 mA for RDY/Busy  
Output Leakage  
ILO  
5
µA VOUT = 0V to VCC+0.1V  
Output Capacitance  
COUT  
12  
pF VOUT = 0V; Tamb = 25°C;  
f = 1 MHz (Note 1)  
Power Supply Current, Activity  
Power Supply Current, Standby  
TTL input  
ICC  
8
mA f = 5 MHz (Note 2)  
IO = OmA  
VCC = 3.3  
CE = VIL  
TTL input  
TTL input  
CMOS input ICC(S)CMOS  
ICC(S)TTL  
ICC(S)TTL  
2
3
100  
mA CE = VIH (0°C to 70°C°)  
mA CE = VIH (-40°C to 85°C°)  
µA CE = VCC -3.0 to VCC+1  
OE = WE = VCC  
All other inputs equal VCC or  
VSS  
Note 1: Not 100% tested.  
2: AC power supply current above 5 MHz: 2 mA/Mhz.  
DS21113D-page 2  
Preliminary  
1988 Microchip Technology Inc.  
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28LV64A  
TABLE 1-3:  
READ OPERATION AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2  
1 TTL Load + 100 pF  
Input Rise and Fall Times: 20 ns  
Ambient Temperature: Commercial (C): Tamb = 0°C to +70°C  
Industrial  
(I) : Tamb = -40°C to +85°C  
28LV64-30  
Parameter  
Sym  
Units  
Conditions  
Min  
0
Max  
300  
300  
150  
60  
Address to Output Delay  
CE to Output Delay  
tACC  
tCE  
ns  
ns  
ns  
ns  
ns  
OE = CE = VIL  
OE = VIL  
CE = VIL  
OE to Output Delay  
tOE  
CE or OE High to Output Float  
tOFF  
tOH  
(Note 1)  
Output Hold from Address, CE or  
OE, whichever occurs first.  
0
(Note 1)  
Endurance  
10M  
cycles  
25°C, Vcc = 5.0V,  
Block Mode (Note 2)  
Note 1: Not 100% tested.  
2: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific  
application, please consult the Total Endurance Model which can be obtained on our BBS or website.  
FIGURE 1-1: READ WAVEFORMS  
VIH  
Address  
CE  
Address Valid  
VIL  
VIH  
VIL  
tCE(2)  
VIH  
VIL  
OE  
tOFF(1,3)  
tOH  
tOE(2)  
VOH  
VOL  
High Z  
High Z  
Data  
Valid Output  
tACC  
VIH  
VIL  
WE  
Notes: (1) tOFF is specified for OE or CE, whichever occurs first  
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE  
(3) This parameter is sampled and is not 100% tested  
1988 Microchip Technology Inc.  
Preliminary  
DS21113D-page 3  
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28LV64A  
TABLE 1-4:  
BYTE WRITE AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2  
1 TTL Load + 100 pF  
Input Rise/Fall Times:  
Ambient Temperature:  
20 ns  
Commercial (C): Tamb = 0°C to +70°C  
Industrial  
(I) : Tamb = -40°C to +85°C  
Parameter  
Sym  
tAS  
Min  
10  
Max  
Units  
ns  
Remarks  
Address Set-Up Time  
Address Hold Time  
Data Set-Up Time  
Data Hold Time  
tAH  
100  
120  
10  
ns  
tDS  
ns  
tDH  
ns  
Write Pulse Width  
OE Hold Time  
tWPL  
tOEH  
tOES  
tDV  
150  
10  
ns  
(Note 1)  
ns  
OE Set-Up Time  
10  
ns  
Data Valid Time  
1000  
50  
ns  
(Note 2)  
Time to Device Busy  
Write Cycle Time (28LV64A)  
tDB  
ns  
tWC  
3
ms  
1.5 ms typical  
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the  
positive edge of CE or WE, whichever occurs first.  
2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH  
after the positive edge of WE or CE, whichever occurs first.  
FIGURE 1-2: PROGRAMMING WAVEFORMS  
VIH  
Address  
VIL  
tAS  
tAH  
tWPL  
VIH  
VIL  
CE, WE  
Data In  
tDH  
tDV  
tDS  
VIH  
VIL  
tOES  
VIH  
VIL  
OE  
tOEH  
tDB  
VOH  
VOL  
Busy  
Ready  
Rdy/Busy  
twc  
DS21113D-page 4  
Preliminary  
1988 Microchip Technology Inc.  
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28LV64A  
FIGURE 1-3: DATA POLLING WAVEFORMS  
VIH  
Last Written  
Address Valid  
Address Valid  
Address  
CE  
VIL  
t ACC  
VIH  
VIL  
tCE  
t WPH  
VIH  
VIL  
tWPL  
WE  
tOE  
VIH  
VIL  
OE  
tDV  
VIH  
VIL  
Data In  
Valid  
True Data Out  
Data  
I/O7 Out  
tWC  
FIGURE 1-4: CHIP CLEAR WAVEFORMS  
VIH  
CE  
VIL  
VH  
OE  
VIH  
tS  
tH  
tW  
VIH  
WE  
tW  
= 10ms  
VIL  
tS = = 1µs  
tH  
= 12.0V ±0.5V  
VH  
TABLE 1-5:  
SUPPLEMENTARY CONTROL  
Mode  
CE  
OE  
WE  
AI  
VCC  
I/OI  
Chip Clear  
VIL  
VIL  
VH  
VIL  
VIH  
X
VCC  
VCC  
VCC  
Extra Row Read  
VIH  
A9 = VH  
A9 = VH  
Data Out  
Data In  
Extra Row Write  
Note: VH = 12.0V ± 0.5V  
1988 Microchip Technology Inc.  
Preliminary  
DS21113D-page 5  
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28LV64A  
2.4  
Write Mode  
2.0  
DEVICE OPERATION  
The Microchip Technology Inc. 28LV64A has four  
basic modes of operation—read, standby, write inhibit,  
and byte write—as outlined in the following table.  
The 28LV64A has a write cycle similar to that of a  
static RAM. The write cycle is completely self-timed  
and initiated by a low going pulse on the WE pin. On  
the falling edge of WE, the address information is  
latched. On rising edge, the data and the control pins  
(CE and OE) are latched. The Ready/Busy pin goes  
to a logic low level indicating that the 28LV64A is in a  
write cycle which signals the microprocessor host that  
the system bus is free for other activity. When  
Ready/Busy goes back to a high, the 28LV64A has  
completed writing and is ready to accept another  
cycle.  
Operation Mode CE OE WE I/O  
Rdy/Busy(1)  
H
Read  
L
L
X
X
L
H
X
X
X
H
L
DOUT  
Standby  
H
H
X
X
L
High Z H  
High Z H  
High Z H  
High Z H  
Write Inhibit  
Write Inhibit  
Write Inhibit  
Byte Write  
Byte Clear  
X
H
DIN  
L
2.5  
Data Polling  
Automatic Before Each "Write"  
Note: (1) Open drain output.  
The 28LV64A features Data polling to signal the com-  
pletion of a byte write cycle. During a write cycle, an  
attempted read of the last byte written results in the  
data complement of I/O7 (I/O0 to I/O6 can not be  
determined). After completion of the write cycle, true  
data is available. Data polling allows a simple  
read/compare operation to determine the status of the  
chip eliminating the need for external hardware.  
2.1  
Read Mode  
The 28LV64A has two control functions, both of which  
must be logically satisfied in order to obtain data at the  
outputs. Chip enable (CE) is the power control and  
should be used for device selection. Output Enable  
(OE) is the output control and is used to gate data to  
the output pins independent of device selection.  
Assuming that addresses are stable, address access  
time (tACC) is equal to the delay from CE to output  
(tCE). Data is available at the output tOE after the fall-  
ing edge of OE, assuming that CE has been low and  
addresses have been stable for at least tACC-tOE.  
2.6  
Electronic Signature for Device  
Identification  
An extra row of 32 bytes of EEPROM memory is avail-  
able to the user for device identification. By raising A9  
to 12V ±0.5V and using address locations 1FEO to  
1FFF, the additional bytes can be written to or read  
from in the same manner as the regular memory array.  
2.2  
Standby Mode  
2.7  
Chip Clear  
The 28LV64A is placed in the standby mode by apply-  
ing a high signal to the CE input. When in the standby  
mode, the outputs are in a high impedance state, inde-  
pendent of the OE input.  
All data may be cleared to 1's in a chip clear cycle by  
raising OE to 12 volts and bringing the WE and CE  
low. This procedure clears all data, except for the  
extra row.  
2.3  
Data Protection  
In order to ensure data integrity, especially during criti-  
cal power-up and power-down transitions, the follow-  
ing enhanced data protection circuits are incorporated:  
First, an internal VCC detect (2.0 volts typical) will  
inhibit the initiation of non-volatile programming opera-  
tion when VCC is less than the VCC detect circuit trip.  
Second, holding WE or CE high or OE low, inhibits a  
write cycle during power-on and power-off (VCC).  
DS21113D-page 6  
Preliminary  
1988 Microchip Technology Inc.  
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28LV64A  
28LV64A Product Identification System  
To order or to obtain information (e.g., on pricing or delivery), please use the listed part numbers, and refer to the factory or the listed  
sales offices.  
28LV64A –  
F
T – 20  
I
/P  
Package:  
L = Plastic Leaded Chip Carrier (PLCC)  
P = Plastic DIP  
SO = Plastic Small Outline IC  
Temperature  
Range:  
Blank = 0°C to +70°C  
I = -40°C to +85°C  
Access Time:  
Shipping:  
20 = 200 ns  
30 - 300 ns  
Blank = Tube  
T = Tape and Reel “Land “SO”  
Option:  
Device:  
Blank = twc = 1ms  
F = twc = 200µs  
24LV64A 8K x 8 CMOS EEPROM  
1988 Microchip Technology Inc.  
DS21113D-page 7  
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WORLDWIDE SALES AND SERVICE  
AMERICAS  
AMERICAS (continued)  
ASIA/PACIFIC (continued)  
Corporate Office  
Toronto  
Singapore  
Microchip Technology Inc.  
Microchip Technology Inc.  
Microchip Technology Singapore Pte Ltd.  
200 Middle Road  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-786-7200 Fax: 480-786-7277  
Technical Support: 480-786-7627  
Web Address: http://www.microchip.com  
5925 Airport Road, Suite 200  
Mississauga, Ontario L4V 1W1, Canada  
Tel: 905-405-6279 Fax: 905-405-6253  
#07-02 Prime Centre  
Singapore 188980  
Tel: 65-334-8870 Fax: 65-334-8850  
Taiwan, R.O.C  
Microchip Technology Taiwan  
10F-1C 207  
Tung Hua North Road  
Taipei, Taiwan, ROC  
ASIA/PACIFIC  
Hong Kong  
Microchip Asia Pacific  
Unit 2101, Tower 2  
Atlanta  
Microchip Technology Inc.  
500 Sugar Mill Road, Suite 200B  
Atlanta, GA 30350  
Metroplaza  
223 Hing Fong Road  
Kwai Fong, N.T., Hong Kong  
Tel: 852-2-401-1200 Fax: 852-2-401-3431  
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139  
Tel: 770-640-0034 Fax: 770-640-0307  
Boston  
EUROPE  
Microchip Technology Inc.  
5 Mount Royal Avenue  
Marlborough, MA 01752  
Tel: 508-480-9990 Fax: 508-480-8575  
Beijing  
United Kingdom  
Microchip Technology, Beijing  
Unit 915, 6 Chaoyangmen Bei Dajie  
Dong Erhuan Road, Dongcheng District  
New China Hong Kong Manhattan Building  
Beijing 100027 PRC  
Arizona Microchip Technology Ltd.  
505 Eskdale Road  
Winnersh Triangle  
Wokingham  
Berkshire, England RG41 5TU  
Tel: 44 118 921 5858 Fax: 44-118 921-5835  
Denmark  
Microchip Technology Denmark ApS  
Regus Business Centre  
Lautrup hoj 1-3  
Ballerup DK-2750 Denmark  
Tel: 45 4420 9895 Fax: 45 4420 9910  
Chicago  
Microchip Technology Inc.  
333 Pierce Road, Suite 180  
Itasca, IL 60143  
Tel: 86-10-85282100 Fax: 86-10-85282104  
India  
Tel: 630-285-0071 Fax: 630-285-0075  
Dallas  
Microchip Technology Inc.  
4570 Westgrove Drive, Suite 160  
Addison, TX 75248  
Microchip Technology Inc.  
India Liaison Office  
No. 6, Legacy, Convent Road  
Bangalore 560 025, India  
Tel: 91-80-229-0061 Fax: 91-80-229-0062  
Tel: 972-818-7423 Fax: 972-818-2924  
Dayton  
Microchip Technology Inc.  
Two Prestige Place, Suite 150  
Miamisburg, OH 45342  
Tel: 937-291-1654 Fax: 937-291-9175  
Detroit  
Microchip Technology Inc.  
Tri-Atria Office Building  
32255 Northwestern Highway, Suite 190  
Farmington Hills, MI 48334  
Tel: 248-538-2250 Fax: 248-538-2260  
Japan  
France  
Microchip Technology Intl. Inc.  
Benex S-1 6F  
Arizona Microchip Technology SARL  
Parc d’Activite du Moulin de Massy  
43 Rue du Saule Trapu  
3-18-20, Shinyokohama  
Kohoku-Ku, Yokohama-shi  
Kanagawa 222-0033 Japan  
Tel: 81-45-471- 6166 Fax: 81-45-471-6122  
Batiment A - ler Etage  
91300 Massy, France  
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79  
Germany  
Arizona Microchip Technology GmbH  
Gustav-Heinemann-Ring 125  
D-81739 München, Germany  
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44  
Korea  
Microchip Technology Korea  
168-1, Youngbo Bldg. 3 Floor  
Samsung-Dong, Kangnam-Ku  
Seoul, Korea  
Tel: 82-2-554-7200 Fax: 82-2-558-5934  
Shanghai  
Microchip Technology  
RM 406 Shanghai Golden Bridge Bldg.  
2077 Yan’an Road West, Hong Qiao District  
Shanghai, PRC 200335  
Italy  
Los Angeles  
Arizona Microchip Technology SRL  
Centro Direzionale Colleoni  
Palazzo Taurus 1 V. Le Colleoni 1  
20041 Agrate Brianza  
Microchip Technology Inc.  
18201 Von Karman, Suite 1090  
Irvine, CA 92612  
Tel: 949-263-1888 Fax: 949-263-1338  
New York  
Microchip Technology Inc.  
150 Motor Parkway, Suite 202  
Hauppauge, NY 11788  
Tel: 631-273-5305 Fax: 631-273-5335  
Milan, Italy  
Tel: 39-039-65791-1 Fax: 39-039-6899883  
Tel: 86-21-6275-5700 Fax: 86 21-6275-5060  
11/15/99  
San Jose  
Microchip received QS-9000 quality system  
certification for its worldwide headquarters,  
design and wafer fabrication facilities in  
Chandler and Tempe, Arizona in July 1999. The  
Company’s quality system processes and  
procedures are QS-9000 compliant for its  
PICmicro® 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs and microperipheral  
products. In addition, Microchips quality  
system for the design and manufacture of  
development systems is ISO 9001 certified.  
Microchip Technology Inc.  
2107 North First Street, Suite 590  
San Jose, CA 95131  
Tel: 408-436-7950 Fax: 408-436-7955  
All rights reserved. © 1999 Microchip Technology Incorporated. Printed in the USA. 11/99  
Printed on recycled paper.  
Information contained in this publication regarding device applications and the like is intended for suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed  
by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchips products  
as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip  
logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.  
1999 Microchip Technology Inc.  
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SI9135_11

SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9136_11

Multi-Output Power-Supply Controller

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VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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VISHAY