28LV64A-FT20/L [ETC]
x8 EEPROM ; X8 EEPROM\n型号: | 28LV64A-FT20/L |
厂家: | ETC |
描述: | x8 EEPROM
|
文件: | 总8页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
28LV64A
64K (8K x 8) Low Voltage CMOS EEPROM
FEATURES
PACKAGE TYPES
• 2.7V to 3.6V Supply
RDY/BSY
A12
A7
• 1
2
28 Vcc
27 WE
26 NC
25 A8
• Read Access Time—300 ns
• CMOS Technology for Low Power Dissipation
- 8 mA Active
- 50 µA CMOS Standby Current
• Byte Write Time—3 ms
• Data Retention >200 years
• High Endurance - Minimum 100,000 Erase/Write
Cycles
• Automatic Write Operation
- Internal Control Timer
3
A6
4
A6
A5
A4
A3
A2
A1 10
A0 11
NC 12
I/O0 13
5
6
7
8
9
29 A8
28 A9
A5
5
24 A9
A4
6
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
A3
7
A2
8
A1
9
A0
10
11
12
13
I/O0
I/O1
I/O2
VSS 14
-
Auto-Clear Before Write Operation
• Pin 1 indicator on PLCC on top of package
- On-Chip Address and Data Latches
• Data Polling
• Ready/Busy
• Chip Clear Operation
BLOCK DIAGRAM
I/O0...................I/O7
• Enhanced Data Protection
- VCC Detector
- Pulse Filter
VSS
VCC
Data Protection
Circuitry
Chip Enable/
Output Enable
Control Logic
CE
- Write Inhibit
OE
• Electronic Signature for Device Identification
• Organized 8Kx8 JEDEC Standard Pinout
- 28-pin Dual-In-Line Package
- 32-pin Chip Carrier (Leadless or Plastic)
• Available for Extended Temperature Ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
Auto Erase/Write
Timing
Data
Poll
WE
Input/Output
Buffers
Rdy/
Busy
Program Voltage
Generation
A0
Y
I
I
I
I
I
I
I
I
Y Gating
Decoder
L
a
t
c
h
e
s
64K bit
Cell Matrix
X
DESCRIPTION
Decoder
I
I
I
The Microchip Technology Inc. 28LV64A is a CMOS 64K non-vol-
atile electrically Erasable PROM organized as 8K words by 8 bits.
The 28LV64A is accessed like a static RAM for the read or write
cycles without the need of external components. During a “byte
write”, the address and data are latched internally, freeing the
microprocessor address and data bus for other operations. Fol-
lowing the initiation of write cycle, the device will go to a busy state
and automatically clear and write the latched data using an inter-
nal control timer. To determine when the write cycle is complete,
the user has a choice of monitoring the Ready/Busy output or
using Data polling. The Ready/Busy pin is an open drain output,
which allows easy configuration in ‘wired-or’ systems. Alterna-
tively, Data polling allows the user to read the location last written
to when the write operation is complete. CMOS design and pro-
cessing enables this part to be used in systems where reduced
power consumption and reliability are required. A complete family
of packages is offered to provide the utmost flexibility in applica-
tions.
A12
1988 Microchip Technology Inc.
Preliminary
DS21113D-page 1
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28LV64A
TABLE 1-1:
PIN FUCTION TABLE
1.0
ELECTRICAL
CHARACTERISTICS
Name
A0 - A12
CE
Function
Address Inputs
Chip Enable
MAXIMUM RATINGS*
VCC and input voltages w.r.t. VSS ......-0.6V to + 6.25V
Voltage on OE w.r.t. VSS ......................-0.6V to +13.5V
Voltage on A9 w.r.t. VSS.......................-0.6V to +13.5V
Output Voltage w.r.t. VSS.................-0.6V to VCC+0.6V
Storage temperature .......................... -65˚C to +150˚C
Ambient temp. with power applied......-55°C to +125°C
OE
Output Enable
Write Enable
WE
I/O0 - I/O7 Data Inputs/Outputs
RDY/Busy
VCC
Ready/Busy
+ Power Supply
*Notice: Stresses above those listed under “Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at those or any other conditions
above those indicated in the operation listings of this specification is
not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
VSS
Ground
NC
No Connect; No Internal Connection
NU
Not Used; No External Connection is
Allowed
TABLE 1-2:
READ/WRITE OPERATION DC CHARACTERISTICS
VCC = 2.7 to 3.6V
Commercial (C): Tamb = 0°C to 70°C
Industrial
(I): Tamb = -40°C to 85°C
Parameter
Status
Symbol
Min
Max Units
Conditions
Input Voltages
Logic “1”
Logic “2”
VIH
VIL
2.0
V
V
0.6
5
Input Leakage
—
—
ILI
—
—
µA VIN = 0V to VCC+1
Input Capacitance
CIN
6
pF Vin = 0V; Tamb = 25°C;
f = 1 MHz (Note 1)
Output Voltages
Logic “1”
Logic “0”
VOH
VOL
2.0
V
V
IOH = -100µA
IOL = 1.0 mA
0.3
I0L = 2.0 mA for RDY/Busy
Output Leakage
—
—
ILO
—
—
5
µA VOUT = 0V to VCC+0.1V
Output Capacitance
COUT
12
pF VOUT = 0V; Tamb = 25°C;
f = 1 MHz (Note 1)
Power Supply Current, Activity
Power Supply Current, Standby
TTL input
ICC
—
8
mA f = 5 MHz (Note 2)
IO = OmA
VCC = 3.3
CE = VIL
TTL input
TTL input
CMOS input ICC(S)CMOS
ICC(S)TTL
ICC(S)TTL
—
2
3
100
mA CE = VIH (0°C to 70°C°)
mA CE = VIH (-40°C to 85°C°)
µA CE = VCC -3.0 to VCC+1
OE = WE = VCC
All other inputs equal VCC or
VSS
Note 1: Not 100% tested.
2: AC power supply current above 5 MHz: 2 mA/Mhz.
DS21113D-page 2
Preliminary
1988 Microchip Technology Inc.
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28LV64A
TABLE 1-3:
READ OPERATION AC CHARACTERISTICS
AC Testing Waveform:
Output Load:
VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2
1 TTL Load + 100 pF
Input Rise and Fall Times: 20 ns
Ambient Temperature: Commercial (C): Tamb = 0°C to +70°C
Industrial
(I) : Tamb = -40°C to +85°C
28LV64-30
Parameter
Sym
Units
Conditions
Min
—
—
—
0
Max
300
300
150
60
Address to Output Delay
CE to Output Delay
tACC
tCE
ns
ns
ns
ns
ns
OE = CE = VIL
OE = VIL
CE = VIL
OE to Output Delay
tOE
CE or OE High to Output Float
tOFF
tOH
(Note 1)
Output Hold from Address, CE or
OE, whichever occurs first.
0
—
(Note 1)
Endurance
—
10M
—
cycles
25°C, Vcc = 5.0V,
Block Mode (Note 2)
Note 1: Not 100% tested.
2: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific
application, please consult the Total Endurance Model which can be obtained on our BBS or website.
FIGURE 1-1: READ WAVEFORMS
VIH
Address
CE
Address Valid
VIL
VIH
VIL
tCE(2)
VIH
VIL
OE
tOFF(1,3)
tOH
tOE(2)
VOH
VOL
High Z
High Z
Data
Valid Output
tACC
VIH
VIL
WE
Notes: (1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE
(3) This parameter is sampled and is not 100% tested
1988 Microchip Technology Inc.
Preliminary
DS21113D-page 3
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28LV64A
TABLE 1-4:
BYTE WRITE AC CHARACTERISTICS
AC Testing Waveform:
Output Load:
VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2
1 TTL Load + 100 pF
Input Rise/Fall Times:
Ambient Temperature:
20 ns
Commercial (C): Tamb = 0°C to +70°C
Industrial
(I) : Tamb = -40°C to +85°C
Parameter
Sym
tAS
Min
10
Max
Units
ns
Remarks
Address Set-Up Time
Address Hold Time
Data Set-Up Time
Data Hold Time
tAH
100
120
10
ns
tDS
ns
tDH
ns
Write Pulse Width
OE Hold Time
tWPL
tOEH
tOES
tDV
150
10
ns
(Note 1)
ns
OE Set-Up Time
10
ns
Data Valid Time
1000
50
ns
(Note 2)
Time to Device Busy
Write Cycle Time (28LV64A)
tDB
ns
tWC
3
ms
1.5 ms typical
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the
positive edge of CE or WE, whichever occurs first.
2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH
after the positive edge of WE or CE, whichever occurs first.
FIGURE 1-2: PROGRAMMING WAVEFORMS
VIH
Address
VIL
tAS
tAH
tWPL
VIH
VIL
CE, WE
Data In
tDH
tDV
tDS
VIH
VIL
tOES
VIH
VIL
OE
tOEH
tDB
VOH
VOL
Busy
Ready
Rdy/Busy
twc
DS21113D-page 4
Preliminary
1988 Microchip Technology Inc.
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28LV64A
FIGURE 1-3: DATA POLLING WAVEFORMS
VIH
Last Written
Address Valid
Address Valid
Address
CE
VIL
t ACC
VIH
VIL
tCE
t WPH
VIH
VIL
tWPL
WE
tOE
VIH
VIL
OE
tDV
VIH
VIL
Data In
Valid
True Data Out
Data
I/O7 Out
tWC
FIGURE 1-4: CHIP CLEAR WAVEFORMS
VIH
CE
VIL
VH
OE
VIH
tS
tH
tW
VIH
WE
tW
= 10ms
VIL
tS = = 1µs
tH
= 12.0V ±0.5V
VH
TABLE 1-5:
SUPPLEMENTARY CONTROL
Mode
CE
OE
WE
AI
VCC
I/OI
Chip Clear
VIL
VIL
VH
VIL
VIH
X
VCC
VCC
VCC
Extra Row Read
VIH
A9 = VH
A9 = VH
Data Out
Data In
Extra Row Write
Note: VH = 12.0V ± 0.5V
1988 Microchip Technology Inc.
Preliminary
DS21113D-page 5
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28LV64A
2.4
Write Mode
2.0
DEVICE OPERATION
The Microchip Technology Inc. 28LV64A has four
basic modes of operation—read, standby, write inhibit,
and byte write—as outlined in the following table.
The 28LV64A has a write cycle similar to that of a
static RAM. The write cycle is completely self-timed
and initiated by a low going pulse on the WE pin. On
the falling edge of WE, the address information is
latched. On rising edge, the data and the control pins
(CE and OE) are latched. The Ready/Busy pin goes
to a logic low level indicating that the 28LV64A is in a
write cycle which signals the microprocessor host that
the system bus is free for other activity. When
Ready/Busy goes back to a high, the 28LV64A has
completed writing and is ready to accept another
cycle.
Operation Mode CE OE WE I/O
Rdy/Busy(1)
H
Read
L
L
X
X
L
H
X
X
X
H
L
DOUT
Standby
H
H
X
X
L
High Z H
High Z H
High Z H
High Z H
Write Inhibit
Write Inhibit
Write Inhibit
Byte Write
Byte Clear
X
H
DIN
L
2.5
Data Polling
Automatic Before Each "Write"
Note: (1) Open drain output.
The 28LV64A features Data polling to signal the com-
pletion of a byte write cycle. During a write cycle, an
attempted read of the last byte written results in the
data complement of I/O7 (I/O0 to I/O6 can not be
determined). After completion of the write cycle, true
data is available. Data polling allows a simple
read/compare operation to determine the status of the
chip eliminating the need for external hardware.
2.1
Read Mode
The 28LV64A has two control functions, both of which
must be logically satisfied in order to obtain data at the
outputs. Chip enable (CE) is the power control and
should be used for device selection. Output Enable
(OE) is the output control and is used to gate data to
the output pins independent of device selection.
Assuming that addresses are stable, address access
time (tACC) is equal to the delay from CE to output
(tCE). Data is available at the output tOE after the fall-
ing edge of OE, assuming that CE has been low and
addresses have been stable for at least tACC-tOE.
2.6
Electronic Signature for Device
Identification
An extra row of 32 bytes of EEPROM memory is avail-
able to the user for device identification. By raising A9
to 12V ±0.5V and using address locations 1FEO to
1FFF, the additional bytes can be written to or read
from in the same manner as the regular memory array.
2.2
Standby Mode
2.7
Chip Clear
The 28LV64A is placed in the standby mode by apply-
ing a high signal to the CE input. When in the standby
mode, the outputs are in a high impedance state, inde-
pendent of the OE input.
All data may be cleared to 1's in a chip clear cycle by
raising OE to 12 volts and bringing the WE and CE
low. This procedure clears all data, except for the
extra row.
2.3
Data Protection
In order to ensure data integrity, especially during criti-
cal power-up and power-down transitions, the follow-
ing enhanced data protection circuits are incorporated:
First, an internal VCC detect (2.0 volts typical) will
inhibit the initiation of non-volatile programming opera-
tion when VCC is less than the VCC detect circuit trip.
Second, holding WE or CE high or OE low, inhibits a
write cycle during power-on and power-off (VCC).
DS21113D-page 6
Preliminary
1988 Microchip Technology Inc.
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28LV64A
28LV64A Product Identification System
To order or to obtain information (e.g., on pricing or delivery), please use the listed part numbers, and refer to the factory or the listed
sales offices.
28LV64A –
F
T – 20
I
/P
Package:
L = Plastic Leaded Chip Carrier (PLCC)
P = Plastic DIP
SO = Plastic Small Outline IC
Temperature
Range:
Blank = 0°C to +70°C
I = -40°C to +85°C
Access Time:
Shipping:
20 = 200 ns
30 - 300 ns
Blank = Tube
T = Tape and Reel “L” and “SO”
Option:
Device:
Blank = twc = 1ms
F = twc = 200µs
24LV64A 8K x 8 CMOS EEPROM
1988 Microchip Technology Inc.
DS21113D-page 7
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WORLDWIDE SALES AND SERVICE
AMERICAS
AMERICAS (continued)
ASIA/PACIFIC (continued)
Corporate Office
Toronto
Singapore
Microchip Technology Inc.
Microchip Technology Inc.
Microchip Technology Singapore Pte Ltd.
200 Middle Road
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-786-7200 Fax: 480-786-7277
Technical Support: 480-786-7627
Web Address: http://www.microchip.com
5925 Airport Road, Suite 200
Mississauga, Ontario L4V 1W1, Canada
Tel: 905-405-6279 Fax: 905-405-6253
#07-02 Prime Centre
Singapore 188980
Tel: 65-334-8870 Fax: 65-334-8850
Taiwan, R.O.C
Microchip Technology Taiwan
10F-1C 207
Tung Hua North Road
Taipei, Taiwan, ROC
ASIA/PACIFIC
Hong Kong
Microchip Asia Pacific
Unit 2101, Tower 2
Atlanta
Microchip Technology Inc.
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2-401-1200 Fax: 852-2-401-3431
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Tel: 770-640-0034 Fax: 770-640-0307
Boston
EUROPE
Microchip Technology Inc.
5 Mount Royal Avenue
Marlborough, MA 01752
Tel: 508-480-9990 Fax: 508-480-8575
Beijing
United Kingdom
Microchip Technology, Beijing
Unit 915, 6 Chaoyangmen Bei Dajie
Dong Erhuan Road, Dongcheng District
New China Hong Kong Manhattan Building
Beijing 100027 PRC
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5858 Fax: 44-118 921-5835
Denmark
Microchip Technology Denmark ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
Chicago
Microchip Technology Inc.
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 86-10-85282100 Fax: 86-10-85282104
India
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
Microchip Technology Inc.
4570 Westgrove Drive, Suite 160
Addison, TX 75248
Microchip Technology Inc.
India Liaison Office
No. 6, Legacy, Convent Road
Bangalore 560 025, India
Tel: 91-80-229-0061 Fax: 91-80-229-0062
Tel: 972-818-7423 Fax: 972-818-2924
Dayton
Microchip Technology Inc.
Two Prestige Place, Suite 150
Miamisburg, OH 45342
Tel: 937-291-1654 Fax: 937-291-9175
Detroit
Microchip Technology Inc.
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Japan
France
Microchip Technology Intl. Inc.
Benex S-1 6F
Arizona Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa 222-0033 Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Arizona Microchip Technology GmbH
Gustav-Heinemann-Ring 125
D-81739 München, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Shanghai
Microchip Technology
RM 406 Shanghai Golden Bridge Bldg.
2077 Yan’an Road West, Hong Qiao District
Shanghai, PRC 200335
Italy
Los Angeles
Arizona Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Microchip Technology Inc.
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
New York
Microchip Technology Inc.
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
Tel: 86-21-6275-5700 Fax: 86 21-6275-5060
11/15/99
San Jose
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999. The
Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs and microperipheral
products. In addition, Microchip’s quality
system for the design and manufacture of
development systems is ISO 9001 certified.
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
All rights reserved. © 1999 Microchip Technology Incorporated. Printed in the USA. 11/99
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended for suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed
by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products
as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip
logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
1999 Microchip Technology Inc.
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