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2N6797 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39 ; 晶体管| MOSFET | N沟道| 150V V（ BR ） DSS | 3.5AI （D ） | TO- 39\n
2N6797
元器件型号： 2N6797
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39
晶体管| MOSFET | N沟道| 150V V（ BR ） DSS | 3.5AI （D ） | TO- 39\n

晶体 晶体管
PDF文件： 总1页 (文件大小：104K)
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型号参数：2N6797参数
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2N6798

 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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72 ETC

2N6798

 N-CHANNEL ENHANCEMENT MODE TRANSISTOR

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182 SEME-LAB

2N6798

 N-CHANNEL MOSFET

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32 MICROSEMI

2N6798

 N-CHANNEL MOSFET

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45 MICROSEMI

2N6798

 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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70 ETC

2N6798_10

 N-CHANNEL MOSFET

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15 MICROSEMI

2N6798E

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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2 IRF

2N6798EA

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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1 IRF

2N6798EB

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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2 IRF

2N6798EBPBF

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

2N6798ED

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

2N6798SCC5205/019

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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1 IRF

2N6798TX

 5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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0 RENESAS

2N6798TXV

 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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1 FAIRCHILD

2N6798TXV

 5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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0 RENESAS
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