2N6802 [ETC]

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor; 100 V, 200 V, 400 V和500 V , N沟道增强型MOSFET功率晶体管
2N6802
型号: 2N6802
厂家: ETC    ETC
描述:

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
100 V, 200 V, 400 V和500 V , N沟道增强型MOSFET功率晶体管

晶体 晶体管
文件: 总5页 (文件大小:48K)
下载:  下载PDF数据表文档文件

2N6802U

N-CHANNEL MOSFET

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15 MICROSEMI

2N6804

P-CHANNEL MOSFET

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307 MICROSEMI

2N6804

-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package

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482 ETC

2N6804_12

This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.

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77 MAS

2N6804E3

Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PIN

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1 MICROSEMI

2N6804PBF

Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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1 IRF

2N6804SCC5206/004

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

2N6804SCC5206/004PBF

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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2 IRF

2N6806

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AA

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44 ETC

2N6806SCC5206/004

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

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0 IRF

2N6806SCC5206/004PBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

2N681

25 and 35 Amp RMS SCRs

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37 KNOX

2N681

25 and 35 Amp RMS SCRs

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63 IRF

2N681

25 AND 35 AMP RMS SCRS

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17 IRF

2N681

SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS

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17 CENTRAL