2SC519A [ETC]
TRANSISTOR | BJT | NPN | 110V V(BR)CEO | 7A I(C) | TO-3 ; 晶体管| BJT | NPN | 110V V（ BR ） CEO | 7A I（C ） | TO- 3\n
| 型号： | 2SC519A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 110V V(BR)CEO | 7A I(C) | TO-3
|
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5223
Silicon NPN triple diffusion planar type
Unit: mm
6.5±0.1
5.3±0.1
4.35±0.1
2.3±0.1
For high-speed switching
0.5±0.1
1.0±0.1
0.1±0.05
Features
High collector to base voltage VCBO
■
0.93±0.1
0.5±0.1
●
0.75±0.1
●
2.3±0.1
High collector to emitter VCEO
4.6±0.1
1:Base
2:Collector
3:Emitter
U Type Package
1
2
3
Absolute Maximum Ratings (Ta=25˚C)
■
Unit: mm
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
6.5±0.2
5.35
4.35
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
500
500
V
7
2.0
V
A
0.75
0.6
IC
1.0
A
2.3 2.3
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature
PC
10
W
˚C
˚C
Tj
150
0.5±0.1
Tstg
–55 to +150
1:Base
2:Collector
3:Emitter
1
2
3
EIAJ:SC–63
U Type Package (Z)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
10
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 400V, IE = 0
IEBO
VEB = 5V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
hFE1
500
500
7
V
V
V
CE = 5V, IC = 50mA
100
100
Forward current transfer ratio
hFE2
VCE = 5V, IC = 330mA
IC = 330mA, IB = 33mA
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
1.0
1.5
V
V
I
C = 330mA, IB = 33mA
1
Power Transistors
2SC5223
PC — Ta
IC — VCE
VCE(sat) — IC
12
600
500
400
300
200
100
0
10
IC/IB=10
Without heat sink
Ta=25˚C
IB=6mA
3
1
10
8
TC=100˚C
25˚C
5mA
4mA
0.3
0.1
3mA
2mA
6
–25˚C
0.03
0.01
1mA
4
2
0.003
0.001
0
0
40
80
120
160
200
)
0
1
2
3
4
5
6
0.001 0.003 0.01 0.03
0.1
0.3
1
(
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
Cob — VCB
100
600
120
100
80
60
40
20
0
IE=0
f=1MHz
Ta=25˚C
IC/IB=10
VCE=5V
30
10
500
400
300
200
100
0
3
1
TC=100˚C
TC=–25˚C
25˚C
25˚C
0.3
0.1
100˚C
–25˚C
0.03
0.01
0.001 0.003 0.01 0.03
0.1
0.3
1
0.001 0.003 0.01 0.03
0.1
0.3
1
1
3
10
30
100 300 1000
( )
A
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
2
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