2SC5200 [JSMC]
Silicon NPN Triple Diffused Transistor;
| 型号： | 2SC5200 |
| 厂家： | 
JILIN SINO-MICROELECTRONICS CO., LTD. |
| 描述： | Silicon NPN Triple Diffused Transistor |
| 文件： | 总8页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN 三重扩散晶体管
Silicon NPN Triple Diffused Transistor
R
2SC5200 SERIES
APPLICATIONS
用途
应用于功率放大器
Power Amplifier Applications
产品特性
高集电极电压：VCEO=230V (min)
VCEO=250V (min)
FEATURES
High collector voltage：VCEO=230V (min)
VCEO=250V (min)
与 2SA1943 互补
Complementary to 2SA1943
Recommended for 100W audio frequency
amplifier output
推荐用于 100W 音响频率放大器输出电路
环保（RoHS）产品
封装 Package
RoHS product
TO-3PL(T)
TO-3PB
1
基极 BASE
3 发射极 EMITTER
2
集电极（热沉）COLLECTOR (HEAT SINK)
订货信息 ORDER MESSAGE
订 货 型 号
印
记
无卤素
Halogen
Free
封
装
包
装
器件重量
Order codes
Marking
Package
Packaging
Weight
2SC5200-O-AL-N-D
2SC5200-O-AL-N-B
2SC5200-O-AB -N-B
2SC5200A-O-AL-N-D
2SC5200A-O-AL-N-B
2SC5200A-O-AB -N-B
2SC5200B -O-AL-N-B
2SC5200B -O-AL-N-D
2SC5200B-O-AB -N-B
2SC5200C -O-AL-N-B
2SC5200C -O-AL-N-D
2SC5200C-O-AB -N-B
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
2SC5200
否
否
否
否
否
否
否
否
否
否
否
否
NO TO-3PL(T)
NO TO-3PL(T)
NO TO-3PB
泡沫盒 Foam Box
条管 Tube
9.53g(typ)
9.53g(typ)
6.03g(typ)
9.53g(typ)
9.53g(typ)
6.03g(typ)
9.53g(typ)
9.53g(typ)
6.03g(typ)
9.53g(typ)
9.53g(typ)
6.03g(typ)
条管 Tube
NO TO-3PL(T)
NO TO-3PL(T)
NO TO-3PB
泡沫盒 Foam Box
条管 Tube
条管 Tube
NO TO-3PL(T)
NO TO-3PL(T)
NO TO-3PB
条管 Tube
泡沫盒 Foam Box
条管 Tube
NO TO-3PL(T)
NO TO-3PL(T)
NO TO-3PB
条管 Tube
泡沫盒 Foam Box
条管 Tube
版本：201603A
1/8
R
2SC5200 SERIES
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted)
数
值 Value
项
目
符
号
单 位
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Unit
-
A
B
C
集电极—基极直流电压 Collector- Base Voltage
集电极—发射极直流电压 Collector- Emitter Voltage
发射极—基极直流电压 Emitter-Base Voltage
230 230 350 350
230 230 250 250
5
V
V
V
最大集电极电流
最大基极电流
Collector Current
Base Current
15
15
16
16
A
IB
1.5
120
160
1.6
150
200
A
最大集电极耗散功率 TO-3PB Collector Dissipation(Tc=25℃) PC
最大集电极耗散功率 TO-3PL Collector Dissipation(Tc=25℃) PC
W
W
℃
℃
最高结温
贮存温度
Junction Temperature
Storage Temperature
Tj
150
-65~150
Tstg
电特性 ELECTRICAL CHARACTERISTIC
最小值 Value(min)
最大值 Value(max)
项
目
测试条件
典型值
单位
Parameter
Value(typ)
Tests conditions
Unit
5200
A
B
C
5200
A
B
C
ICBO
VCB=230(300)V,IE=0
VEB=5V,IC=0
-
-
-
-
-
5.0@230V 5.0@300V μA
IEBO
5.0
-
mA
V
V(BR)CEO
Ic=50mA,IB=0
230
250
75
75
75
-
VCE=5V,IC=0.5A
VCE=5V,IC=1.0A
VCE=5V,IC=3.0A
VCE=5V,IC=7.0A
IC=5.0A,IB=0.5A
IC=8.0A,IB=0.8A
VCE=5V,IC=7.0A
VCE=5V, Ic=1.0A
VCE=10V, IE =0,f=1MHz
-
-
160
-
135
135
135
80
-
-
-
-
hFE
35
-
-
V
-
-
-
-
1.0
-
VCE(sat)
-
3.0
V
VBE
fT
-
-
1.5
V
10
30
10
30
-
-
MHz
pF
COb
-
145
热特性 THERMAL CHARACTERISTIC
项
目
符
号
最小值
最大值
单 位
Parameter
min
max
Symbo
Unit
2SC5200 2SC5200A
结到管壳的热阻 Thermal Resistance Junction Case TO-3PB
Rth(j-c)
-
-
1.042
0.781
℃/W
℃/W
结到管壳的热阻 Thermal Resistance Junction Case TO-3PL(T) Rth(j-c)
2SC5200B 2SC5200C
结到管壳的热阻 Thermal Resistance Junction Case TO-3PB
结到管壳的热阻 Thermal Resistance Junction Case TO-3PL(T)
Rth(j-c)
Rth(j-c)
-
-
0.83
℃/W
℃/W
0.625
版本：201603A
2/8
R
2SC5200 SERIES
特征曲线 ELECTRICAL CHARACTERISTICS (2SC5200 curves)
IC-VCE
DC Current Gain
1000
100
10
Common emitter Tc = 25°C
Single pulse test
Tc=100℃
Tc=25℃
Common emitter
VCE = 5 V Single pulse test
0.001
0.01
0.1
1
10
100
Collector-emitter voltage VCE (V)
Collector corrent IC (A)
Saturation Voltage
Base-Emitter Voltage
10.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Common emitter
IC/IB = 10
Single pulse test
Tc=100℃
Tc=25℃℃
1.0
Tc=25℃
Common emitter
IC/IB = 10
Tc=100℃
Single pulse test
0.1
0.1
1
10
100
0.1
1
10
100
Collector corrent IC (A)
Collector corrent IC (A)
Power Derating
Safe Operating Area
TC=25℃ DC Operation
Infinite heat sink
1ms
10ms
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
100ms
Ambient temperature TC（℃）
Collector-emitter voltage VCE (V)
版本：201603A
3/8
R
2SC5200 SERIES
特征曲线 ELECTRICAL CHARACTERISTICS (2SC5200A curves)
DC Current Gain
Saturation Voltage
1000
100
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Common emitter
IC/IB = 5
Tc=100℃
Single pulse test
Tc=100℃
Tc=25℃
Tc=25℃
Common emitter
VCE = 5 V Single pulse test
0.1
1
10
100
0.001
0.01
0.1
1
10
100
Collector corrent IC (A)
Collector corrent IC (A)
Base-Emitter Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tc=25℃
Common emitter
IC/IB = 5
Tc=100℃
Single pulse test
0.1
1
10
100
Collector corrent IC (A)
Power Derating
Safe Operating Area
TC=25℃ DC Operation
Infinite heat sink
1ms
10ms
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
100ms
Ambient temperature TC（℃）
Collector-emitter voltage VCE (V)
版本：201603A
4/8
R
2SC5200 SERIES
特征曲线 ELECTRICAL CHARACTERISTICS (2SC5200B curves)
DC Current Gain
Base-Emitter Voltage
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tc=25℃
Tc=100℃
100
Tc=25℃
Common emitter
Tc=100℃
Common emitter
IC/IB = 5
VCE = 5 V Single pulse test
Single pulse test
10
0.01
0.1
1
10
100
0.1
1
100
Collector corrent IC10(A)
Collector corrent IC (A)
Saturation Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Common emitter
IC/IB = 5
Single pulse test
Tc=100℃
Tc=25℃
0.1
1
10
100
Collector corrent IC (A)
Power Derating
Safe Operating Area
TC=25℃ DC Operation
1ms
10ms
Infinite heat sink
100ms
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
Case temperature TC（℃）
Collector-emitter voltage VCE (V)
版本：201603A
5/8
R
2SC5200 SERIES
特征曲线 ELECTRICAL CHARACTERISTICS (2SC5200C curves)
DC Current Gain
Base-Emitter Voltage
Tc=100℃
Tc=25℃
Tc=25℃
Common emitter
Tc=100℃
IC/IB = 5
Common emitter
Single pulse test
VCE = 5 V Single pulse test
Collector corrent IC (A)
Collector corrent IC (A)
Saturation Voltage
Common emitter
IC/IB = 5
Single pulse test
Tc=100℃
Tc=25℃
Collector corrent IC (A)
Power Derating
Safe Operating Area
TC=25℃ DC Operation
1ms
10ms
Infinite heat sink
100ms
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
Case temperature TC（℃）
Collector-emitter voltage VCE (V)
版本：201603A
6/8
R
2SC5200 SERIES
外形尺寸 PACKAGE MECHANICAL DATA
TO-3PB
单位 Unit ：mm
符号
A
尺寸（mm）
4.60-5.00
2.90-3.20
1.90-2.20
0.90-1.10
0.50-0.70
19.40-20.40
15.40-15.80
5.45(TYP)
1.40-1.60
19.50-20.50
3.30-3.70
3.10-3.50
4.90-5.10
1.30-1.50
B
B1
b
c
D
E
e
F
L
L2
P
Q
Q1
外形尺寸 PACKAGE MECHANICAL DATA
TO-3PL(T)
单位 Unit ：mm
符号
A
尺寸（mm）
4.70-5.30
2.80-3.20
2.30-2.70
0.80-1.25
0.59-0.61
25.5-26.5
19.5-20.5
5.45(typ)
6.00-6.10
8.95-9.05
20.0-20.4
2.75-2.85
3.45-3.55
3.20-3.30
B1
B2
b
c
D
E
e
H1
H2
L
Q
P1
P2
版本：201603A
7/8
R
2SC5200 SERIES
注意事项
NOTE
1.吉林华微电子股份有限公司的产品销售分为
直销和销售代理，无论哪种方式，订货时请
与公司核实。
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2.购买时请认清公司商标，如有疑问请与公司
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
本部联系。
3.在电路设计时请不要超过器件的绝对最大额
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
定值，否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
吉林华微电子股份有限公司
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址：吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
邮编：132013
Post Code: 132013
总机：86-432-64678411
传真：86-432-64665812
网址：www.hwdz.com.cn
Tel： 86-432-64678411
Fax：86-432-64665812
Web Site：www.hwdz.com.cn
市场营销部
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
地址：吉林省吉林市深圳街 99 号
邮编：132013
Post Code: 132013
电话： 86-432-64675588
64675688
Tel: 86-432-64675588
64675688
64678411
64678411
传真: 86-432-4671533
Fax: 86-432-64671533
附录（Appendix）：修订记录（Revision History）
日期
旧版本
新版本
修订内容
Date
Last Rev.
New Rev.
201603A
Description of Changes
2016-3-16
版本：201603A
8/8
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