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2SC5603 [ETC]

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR ; 晶体管| BJT | NPN | 6V V（ BR ） CEO | 35MA I（C ） | SOT- 416VAR\n
2SC5603
型号： 2SC5603
厂家： ETC    ETC
描述：

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR
晶体管| BJT | NPN | 6V V（ BR ） CEO | 35MA I（C ） | SOT- 416VAR\n

晶体 晶体管
文件： 总24页 (文件大小：96K)
中文：  中文翻译
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相关型号：

2SC5603-FB

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-3

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NEC

2SC5603-T1

 TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR

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ETC

2SC5603-T1FB

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-3

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NEC

2SC5604-FB

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-3

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NEC

2SC5604-T3FB

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-3

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NEC

2SC5606

 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

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2SC5606

 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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RENESAS

2SC5606(NE66219)

 Discrete

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ETC

2SC5606-A

 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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NEC

2SC5606-A

 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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2SC5606-A-YFB

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN

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NEC

2SC5606-FB

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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NEC

2SC5606-FB-A

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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NEC

2SC5606-T1

 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

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NEC

2SC5606-T1

 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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RENESAS

2SC5606-T1-A

 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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NEC

2SC5606-T1-A

 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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RENESAS

2SC5606-T1-FB-A

 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3

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2SC5606-T1FB

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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NEC

2SC5606-T1FB-A

 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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NEC
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