2SD0638S [ETC]
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | SC-71 ; 晶体管| BJT | NPN | 25V V（ BR ） CEO | 500MA I（C ） | SC- 71\n
| 型号： | 2SD0638S |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | SC-71
|
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD0638, 2SD0639 (2SD638, 2SD639)
Silicon NPN epitaxial planer type
For medium-power general amplification
Unit: mm
Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644)
6.9 0.1
2.5 0.1
1.0
1.5
1.5 R0.9
Features
I
G
R0.9
Low collector to emitter saturation voltage VCE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R0.7
0.85
Absolute Maximum Ratings (Ta=25˚C)
I
0.55 0.1
0.45 0.05
Parameter
Symbol
Ratings
Unit
Collector to
2SD0638
2SD0639
2SD0638
30
VCBO
V
3
2
1
base voltage
Collector to
60
25
VCEO
V
emitter voltage 2SD0639
Emitter to base voltage
Peak collector current
Collector current
50
2.5
2.5
VEBO
ICP
IC
7
V
A
1:Base
1
0.5
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
A
Collector power dissipation
Junction temperature
Storage temperature
PC
600
mW
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
1
Unit
µA
VCB = 20V, IE = 0
Collector cutoff current
ICEO
VCE = 20V, IB = 0
µA
Collector to base
voltage
2SD0638
2SD0639
30
60
25
50
7
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SD0638
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SD0639
Emitter to base voltage
IE = 10µA, IC = 0
*1
hFE1
hFE2
VCE = 10V, IC = 10mA
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA
85
40
160
90
340
0.6
15
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
0.35
200
6
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
Collector output capacitance
Cob
*2 Pulse measurement
*1
h
FE1
Rank classification
Rank
hFE1
Q
R
S
Note.) The Part numbers in the Parenthesis show conventional
part number.
85 ~ 170
120 ~ 240
170 ~ 340
1
Transistor
2SD0638, 2SD0639
PC — Ta
IC — VCE
IC — IB
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
Ta=25˚C
VCE=10V
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0
40
80
120
160
200
)
0
4
8
12
16
20
0
2
4
6
8
10
(
(
)
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
V
Base current IB mA
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
100
100
300
250
200
150
100
50
IC/IB=10
IC/IB=10
VCE=10V
30
10
30
10
Ta=75˚C
25˚C
3
1
3
1
25˚C
75˚C
–25˚C
Ta=–25˚C
Ta=75˚C
25˚C
0.3
0.1
0.3
0.1
–25˚C
0.03
0.01
0.03
0.01
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
(
A
)
(
)
( )
Collector current IC A
Collector current IC
Collector current IC
A
fT — IE
Cob — VCB
ICEO — Ta
240
200
160
120
80
12
10
8
104
103
102
10
VCE=10V
IE=0
f=1MHz
Ta=25˚C
VCB=10V
Ta=25˚C
6
4
40
2
0
–1
0
1
–3
–10
–30
–100
1
3
10
30
100
0
40
80
120
160
200
)
(
)
(
)
(
Ambient temperature Ta ˚C
Emitter current IE mA
Collector to base voltage VCB
V
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
相关型号：
2SD0639Q
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN
PANASONIC
2SD0661
Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
2SD0661A
Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
2SD0661AR
Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
2SD0661AS
Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
2SD0661AT
Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
2SD0661R
Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
2SD0661S
Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
2SD0661T
Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明