2SD0661 [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN;
| 型号： | 2SD0661 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-71, 3 PIN 放大器 晶体管 |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1
2.5±0.1
1.5
1.5 R0.9
1.0
R0.9
Features
Low noise voltage NV.
■
●
●
High foward current transfer ratio hFE
.
R0.7
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.85
0.55±0.1
0.45±0.05
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
Ratings
Unit
3
2
1
Collector to
2SD661
35
VCBO
V
2SD661A
2SD661
base voltage
Collector to
55
2.5
2.5
35
55
VCEO
V
emitter voltage 2SD661A
Emitter to base voltage
Peak collector current
Collector current
1:Base
VEBO
ICP
IC
7
V
mA
mA
mW
˚C
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
200
100
Collector power dissipation
Junction temperature
Storage temperature
PC
400
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
1
Unit
µA
VCB = 20V, IE = 0
Collector cutoff current
ICEO
VCE = 20V, IB = 0
µA
Collector to base
voltage
2SD661
2SD661A
35
55
35
55
7
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SD661
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SD661A
Emitter to base voltage
IE = 10µA, IC = 0
*
Forward current transfer ratio
hFE
V
CE = 10V, IC = 2mA
210
650
1
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB = 10mA
V
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
200
MHz
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
R
S
T
210 ~ 340
290 ~ 460
360 ~ 650
1
Transistor
2SD661, 2SD661A
PC — Ta
IC — VCE
IC — IB
500
400
300
200
100
0
160
140
120
100
80
160
140
120
100
80
Ta=25˚C
VCE=5V
Ta=25˚C
IB=350µA
300µA
250µA
200µA
150µA
100µA
60
60
40
40
50µA
20
20
0
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.1
0.2
0.3
0.4
0.5
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB mA
IB — VBE
IC — VBE
VCE(sat) — IC
800
700
600
500
400
300
200
100
0
120
100
IC/IB=10
VCE=5V
Ta=25˚C
VCE=5V
25˚C
30
10
100
80
60
40
20
0
Ta=75˚C
–25˚C
3
1
0.3
0.1
Ta=75˚C
25˚C
–25˚C
30
0.03
0.01
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
100
( )
V
( )
V
(
)
Base to emitter voltage VBE
Base to emitter voltage VBE
Collector current IC mA
hFE — IC
fT — IE
Cob — VCB
720
600
480
360
240
120
0
500
400
300
200
100
0
20
VCB=5V
Ta=25˚C
VCE=5V
IE=0
f=1MHz
Ta=25˚C
16
12
8
Ta=75˚C
25˚C
–25˚C
4
0
0.1
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
0.3
1
3
10
30
100
(
)
(
)
( )
Collector to base voltage VCB V
Collector current IC mA
Emitter current IE mA
2
Transistor
2SD661, 2SD661A
NV — VCE
NV — VCE
NV — IC
160
140
120
300
240
180
120
60
160
140
120
100
80
IC=1mA
GV=80dB
Function=FLAT
VCE=10V
GV=80dB
Function=FLAT
Rg=100kΩ
IC=1mA
GV=80dB
Function=RIAA
Rg=100kΩ
100
80
60
40
20
0
Rg=100kΩ
60
22kΩ
22kΩ
22kΩ
40
4.7kΩ
4.7kΩ
4.7kΩ
20
0
0
0.01
1
3
10
30
100
1
3
10
30
100
0.03
0.1
0.3
1
( )
V
( )
V
(
)
Collector to emitter voltage VCE
Collector to emitter voltage VCE
Collector current IC mA
NV — IC
NV — Rg
NV — Rg
300
160
300
240
180
120
60
VCE=10V
GV=80dB
Function=RIAA
VCE=10V
GV=80dB
Function=RIAA
VCE=10V
GV=80dB
Function=FLAT
140
120
100
80
240
180
120
60
IC=1mA
Rg=100kΩ
60
IC=1mA
22kΩ
0.5mA
0.1mA
40
0.5mA
3
4.7kΩ
0.1mA
20
0
0.01
0
0
0.03
0.1
0.3
1
1
10
30
100
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Signal source resistance Rg kΩ
Signal source resistance Rg kΩ
3
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