2SD1994AS [ETC]
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | SIP ; 晶体管| BJT | NPN | 50V V（ BR ） CEO | 1A I（C ） | SIP\n
| 型号： | 2SD1994AS |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | SIP
|
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
2.5 0.1
1.05
0.05
For low-frequency power amplification and driver amplification
Complementary to 2SB1322A
6.9 0.1
4.0
(1.45)
0.8
0.7
I Features
0.65 max.
• Low collector to emitter saturation voltage VCE(sat)
• Output of 2 W to 3 W is obtained with a complementary pair with
2SB1322A
0.45+−00..015
• Allowing supply with the radial taping
2.5 0.5 2.5 0.5
2
1
3
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
60
50
V
MT2 Type Package
5
V
1.5
A
IC
1
A
Collector power dissipation *
Junction temperature
Storage temperature
PC
1
W
°C
°C
1.2 0.1
Tj
150
0.65
max.
Tstg
−55 to +150
+
0.1
0.45−0.05
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the
*
(HW Type)
board thickness of 1.7 mm for the collector portion
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
VCB = 20 V, IE = 0
Min
Typ
Max
Unit
µA
V
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
0.1
VCBO
VCEO
VEBO
IC = 10 µA, IE = 0
60
50
5
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
1
2
*
Forward current transfer ratio *
hFE1
hFE2
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
85
50
340
100
0.2
1
Collector to emitter saturation voltage *
VCE(sat)
VBE(sat)
fT
IC = 500 mA, IB = 50 mA
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
0.4
1.2
V
V
1
Base to emitter saturation voltage *
0.85
200
11
1
Transition frequency *
MHz
pF
Collector output capacitance
Cob
20
Note) 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SD1994A
Transistors
PC Ta
IC VCE
IC IB
1.50
1.25
1.00
0.75
0.50
0.25
0
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Ta = 25°C
VCE = 10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
0
2
4
6
8
10
0
2
4
6
8
(
10
)
12
0
20 40 60 80 100 120 140 160
(
)
(
)
Collector to emitter voltage VCE V
Base current IB mA
Ambient temperature Ta °C
VCE(sat) IC
VBE(sat) IC
hFE IC
10
100
500
IC / IB = 10
IC / IB = 10
VCE = 10 V
3
1
30
10
400
300
200
100
0
0.3
0.1
3
1
25°C
Ta = 100°C
25°C
Ta = 100°C
25°C
−25°C
Ta = −25°C
100°C
0.03
0.01
0.3
0.1
−25°C
0.003
0.001
0.03
0.01
0.01 0.03 0.1 0.3
1
3
10
0.01 0.03 0.1 0.3
1
3
10
0.01 0.03 0.1 0.3
1
3
)
10
( )
A
( )
Collector current IC A
(
Collector current IC
Collector current IC
A
fT IE
Cob VCB
VCER RBE
120
100
80
60
40
20
0
200
180
160
140
120
100
80
60
50
40
30
20
10
0
VCB = 10 V
Ta = 25°C
IE = 0
IC = 10 mA
Ta = 25°C
f = 1 MHz
Ta = 25°C
60
40
20
0
0.1 0.3
1
3
10
30
100
)
−1 −2 −3 −5 −10 −20−30 −50 −100
1
3
10
(
Collector to base voltage VCB V
30
100
(
(
)
)
Base to emitter resistance RBE kΩ
Emitter current IE mA
2
Transistors
2SD1994A
ICEO Ta
Area of safe operation (ASO)
104
103
102
10
1
10
Single pulse
Ta = 25°C
VCE = 10 V
3
1
ICP
t = 10 ms
IC
t = 1 s
0.3
0.1
0.03
0.01
0.003
0.001
0.1 0.3
1
3
10
30
100
0
20 40 60 80 100 120 140 160
( )
V
Collector to emitter voltage VCE
(
)
Ambient temperature Ta °C
3
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2001 MAR
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