2SD2274 [ETC]
;
| 型号： | 2SD2274 |
| 厂家： | 
ETC |
| 描述： | 晶体 晶体管 放大器 局域网 |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2274
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
φ 3.3±0.2
5.0±0.3
Complementary to 2SB1501
20.0±0.5
3.0
Features
Optimum for 45W HiFi output
■
●
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage VCE(sat): <3.0V
1.5
1.5
2.0±0.3
2.7±0.3
3.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
1.0±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.6±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
110
5.45±0.3
10.9±0.5
90
V
1:Base
2:Collector
3:Emitter
5
V
7
A
1
2
3
TOP–3L Package
IC
4
50
A
Collector power TC=25°C
Internal Connection
PC
W
dissipation
Ta=25°C
3.5
C
Junction temperature
Storage temperature
Tj
150
˚C
˚C
B
Tstg
–55 to +150
E
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
100
Unit
µA
µA
µA
V
VCB = 110V, IE = 0
Collector cutoff current
ICEO
IEBO
VCEO
hFE1
VCE = 90V, IB = 0
VEB = 5V, IC = 0
Emitter cutoff current
Collector to emitter voltage
I
C = 30mA, IB = 0
90
VCE = 5V, IC = 1A
2000
5000
Forward current transfer ratio
*
hFE2
VCE = 5V, IC = 3A
30000
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 3A, IB = 3mA
3
3
V
V
IC = 3A, IB = 3mA
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
MHz
µs
2.5
3.0
0.7
IC = 3A, IB1 = 3mA, IB2 = –3mA,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
S
P
5000 to 15000 7000 to 21000 8000 to 30000
1
Power Transistors
2SD2274
PC — Ta
IC — VCE
VBE(sat) — IC
80
6
5
4
3
2
1
0
100
IC/IB=1000
TC=25˚C
(1) TC=Ta
70
(2) With a 100 × 100 × 2mm
30
10
Al heat sink
(3) Without heat sink
(PC=3.5W)
IB=3mA
60
50
40
30
20
10
0
(1)
0.5mA
0.4mA
0.3mA
3
1
TC=–25˚C
0.2mA
100˚C
25˚C
0.1mA
(2)
(3)
0.3
0.1
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
30
100
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VCE(sat) — IC
hFE — IC
Cob — VCB
100
100000
1000
IC/IB=1000
VCE=5V
IE=0
f=1MHz
TC=25˚C
30000
30
10
300
100
10000
3000
1000
TC=100˚C
TC=100˚C
25˚C
3
1
30
10
25˚C
300
100
–25˚C
–25˚C
0.3
0.1
3
1
30
10
0.1
0.3
1
3
10
30
100
0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
( )
A
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=–IB2
VCC=50V
Non repetitive pulse
TC=25˚C
30
10
)
30
TC=25˚C
10 ICP
t=1ms
IC
10ms
DC
tstg
3
1
3
ton
tf
1
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
2
4
6
8
1
3
10
30
100 300 1000
( )
A
( )
V
Collector current IC
Collector to emitter voltage VCE
2
Power Transistors
2SD2274
Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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