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2SK2153 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 4A I(D) | TO-251 ; 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS | 4A I（ D） | TO- 251\n
2SK2153
元器件型号： 2SK2153
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 4A I(D) | TO-251
晶体管| MOSFET | N沟道| 20V V（ BR ） DSS | 4A I（ D） | TO- 251\n

晶体 晶体管
PDF文件： 总1页 (文件大小：203K)
下载文档：  下载PDF数据表文档文件
型号参数：2SK2153参数
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2SK2154

 Very High-Speed Switching Applications

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51 SANYO

2SK2157

 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

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67 NEC

2SK2157C

 N-CHANNEL MOSFET FOR SWITCHING

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2 RENESAS

2SK2157C-T1-AY

 N-CHANNEL MOSFET FOR SWITCHING

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1 RENESAS

2SK2157C-T1-AZ

 N-CHANNEL MOSFET FOR SWITCHING

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0 RENESAS

2SK2158

 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

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672 NEC

2SK2158

 MOS Field Effect Transistor

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58 KEXIN

2SK2158

 Capable of drive gate with 1.5 V Because of high input impedance, there is no need

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133 TYSEMI

2SK2158-A

 100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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0 RENESAS

2SK2158A-T1B

 TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346

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1 RENESAS

2SK2158A-T1B-AT

 Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MINI MOLD, SC-59, 3 PIN

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0 RENESAS

2SK2158A-T2B

 TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346

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1 RENESAS

2SK2158A-T2B-AT

 Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MINI MOLD, SC-59, 3 PIN

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0 RENESAS

2SK2159

 Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 MAX.VGS = 1.5 V, ID = 0.1 A

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21 TYSEMI

2SK2159

 MOS Field Effect Transistor

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40 KEXIN
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