2SK291R [ETC]
TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92 ; 晶体管| JFET | N沟道|我20MA ( DSS ) | TO- 92\n型号: | 2SK291R |
厂家: | ETC |
描述: | TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92
|
文件: | 总7页 (文件大小:35K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK291
Silicon N-Channel Junction FET
Application
Low frequency low noise amplifier
Outline
TO-92 (2)
1. Drain
2. Source
3. Gate
3
2
1
2SK291
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VGDO
VGSO
ID
Ratings
Unit
V
Gate to drain voltage
Gate to source voltage
Drain current
–15
–15
V
50
mA
mA
mW
°C
Gate current
IG
5
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
300
150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V(BR)GDO
–15
—
—
V
IG = –100 µA
Gate to source breakdown
voltage
V(BR)GSO
–15
—
—
V
IG = –100 µA
Gate cutoff current
IGSS
—
5
—
10
50
–3.0
—
nA
mA
V
VGS = –7 V, VDS = 0
1
Drain current
IDSS
*
—
VDS = 5 V, VGS = 0
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
|yfs|
—
25
—
—
—
VDS = 5 V, ID = 100 µA
VDS = 5 V, VGS = 0, f = 1 kHz
VDS = 5 V, VGS = 0, f = 1 MHz
45
8.5
1.2
mS
pF
Ciss
—
Noise voltage referred to input en
—
nV/√Hz VDS = 5 V, ID = 5 mA, Rg = 0,
f = 100 kHz
Note: 1. The 2SK291 is grouped by IDSS as follows.
Grade
P
Q
R
S
T
IDSS
5 to 16
14 to 24
20 to 32
28 to 42
36 to 50
2
2SK291
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
VDS = 5 V
30
20
10
450
300
150
–0.8
0
2
4
6
0
50
100
150
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Forward Transfer Admittance vs.
Drain to Source Voltage
Typical Transfer Characteristics
30
20
10
0
60
50
40
30
20
10
0
VDS = 5 V
VDS = 5 V
f = 1 kHz
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2.0
–1.6
–1.2
–0.8
–0.4
0
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
3
2SK291
Input Capacitance vs.
Gate to Source Voltage
Noise Voltage Referred to Input vs.
Signal Source Resistance
14
12
10
8
20
10
5
VDS = 5 V
f = 1 MHz
VDS = 5 V
I
D = 5 mA
Ta = 25°C
f = 120 Hz
100 kHz
2
1.0
0.5
6
√
4 KTRg
4
–1.0
0.2
–0.8
–0.6
–0.4
–0.2
0
1
10
100
1 k
10 k
Gate to Source Voltage VGS (V)
Signal Source Resistance Rg (Ω)
Noise Voltage Referred to Input vs.
Drain to Source Voltage
Noise Voltage Referred
to Input vs. Frequency
20
10
5
50
ID = 10 mA
Rg = 0
VDS = 5 V
Rg = 0
20
10
5
f = 1 kHz
100 kHz
2
1.0
0.5
2
1.0
0.5
0.2
0.2
0.5 1.0
2
5
10 20
10
100
1 k
10 k
100 k
Drain to Source Voltage VDS (V)
Frequency f (Hz)
4
2SK291
Equivalent Noise Resistance vs.
Drain Current
Equivalent Noise Resistance
vs. Frequency
1,000
500
70
60
50
40
30
20
VDS = 5 V
f = 0.5~4 MHz
VDS = 5 V
I
D = 10 mA
200
100
50
20
10
1
2
5
10
20
50 100
0
1
2
3
4
5
Drain Current ID (mA)
Frequency f (MHz)
5
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (2)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
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Tel: <44> (1628) 585000
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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