2SK291SRF [HITACHI]

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型号：	2SK291SRF
厂家：	HITACHI SEMICONDUCTOR
描述：	暂无描述晶体小信号场效应晶体管放大器
文件：	总7页 (文件大小：36K)
中文：	中文翻译
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2SK291

Silicon N-Channel Junction FET

Application

Low frequency low noise amplifier

Outline

TO-92 (2)

1. Drain

2. Source

3. Gate

2SK291

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_GDO

V_GSO

I_D

Ratings

Unit

Gate to drain voltage

Gate to source voltage

Drain current

–15

°C

Gate current

I_G

Channel power dissipation

Channel temperature

Storage temperature

Pch

Tch

Tstg

300

150

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Gate to drain breakdown

voltage

V_(BR)GDO

–15

—

I_G= –100 µA

Gate to source breakdown

voltage

V_(BR)GSO

–15

—

I_G= –100 µA

Gate cutoff current

I_GSS

—

–3.0

—

V_GS= –7 V, V_DS= 0

Drain current

I_DSS

—

V_DS= 5 V, V_GS= 0

Gate to source cutoff voltage

Forward transfer admittance

Input capacitance

V_GS(off)

|y_fs|

—

V_DS= 5 V, I_D= 100 µA

V_DS= 5 V, V_GS= 0, f = 1 kHz

V_DS= 5 V, V_GS= 0, f = 1 MHz

8.5

1.2

Ciss

—

Noise voltage referred to input e_n

—

nV/√Hz V_DS= 5 V, I_D= 5 mA, Rg = 0,

f = 100 kHz

Note: 1. The 2SK291 is grouped by I_DSSas follows.

Grade

I_DSS

5 to 16

14 to 24

20 to 32

28 to 42

36 to 50

2SK291

Maximum Channel Power

Dissipation Curve

Typical Output Characteristics

V_DS= 5 V

450

300

150

–0.8

100

150

Drain to Source Voltage V_DS(V)

Ambient Temperature Ta (°C)

Forward Transfer Admittance vs.

Drain to Source Voltage

Typical Transfer Characteristics

V_DS= 5 V

f = 1 kHz

–2.0

–1.6

–1.2

–0.8

–0.4

–2.0

–1.6

–1.2

–0.8

–0.4

Gate to Source Voltage V_GS(V)

2SK291

Input Capacitance vs.

Gate to Source Voltage

Noise Voltage Referred to Input vs.

Signal Source Resistance

V_DS= 5 V

f = 1 MHz

V_DS= 5 V

_D= 5 mA

Ta = 25°C

f = 120 Hz

100 kHz

1.0

0.5

√

4 KTR_g

–1.0

0.2

–0.8

–0.6

–0.4

–0.2

100

1 k

10 k

Gate to Source Voltage V_GS(V)

Signal Source Resistance R_g(Ω)

Noise Voltage Referred to Input vs.

Drain to Source Voltage

Noise Voltage Referred

to Input vs. Frequency

I_D= 10 mA

R_g= 0

V_DS= 5 V

R_g= 0

f = 1 kHz

100 kHz

1.0

0.5

1.0

0.5

0.2

0.5 1.0

10 20

100

1 k

10 k

100 k

Drain to Source Voltage V_DS(V)

Frequency f (Hz)

2SK291

Equivalent Noise Resistance vs.

Drain Current

Equivalent Noise Resistance

vs. Frequency

1,000

500

V_DS= 5 V

f = 0.5~4 MHz

V_DS= 5 V

_D= 10 mA

200

100

50 100

Drain Current I_D(mA)

Frequency f (MHz)

Unit: mm

4.8 ± 0.3

3.8 ± 0.3

0.60 Max

0.45 ± 0.1

0.5

1.27

2.54

Hitachi Code

JEDEC

EIAJ

TO-92 (2)

Conforms

Weight (reference value) 0.25 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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