3SK235 [ETC]

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型号：	3SK235
厂家：	ETC
描述：	晶体晶体管光电二极管放大器
文件：	总4页 (文件大小：264K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

3SK235

Silicon N Channel Dual Gate MOS FET

UHF/VHF TV Tuner RF Amplifier

Features

MPAK-4

• Low voltage operation.

• High gain, low noise.

Table 1 Absolute Maximum Ratings

(Ta = 25°C)

Item

——————————————————————–

Drain to source voltage 12

——————————————————————–

Gate 1 to source voltage ±10

——————————————————————–

Gate 2 to source voltage ±10

——————————————————————–

Drain current 35 mA

——————————————————————–

Channel power dissipation Pch 150 mW

——————————————————————–

Channel temperature Tch 125 °C

——————————————————————–

Storage temperature Tstg –55 to +125 °C

——————————————————————–

Symbol Rating

Unit

G1S

1. Source

2. Gate 1

3. Gate 2

4. Drain

G2S

3SK235

Table 2 Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min Typ Max Unit Test condition

———————————————————————————————————————————————–

Drain to source breakdown voltage

—

= 200 µA, V

(BR)DSX

G1S

–5 V, V

= –5 V

G2S

———————————————————————————————————————————————–

Gate 1 to source breakdown voltage ±10 = ±10 µA,

—

(BR)G1SS

= V

= 0

G2S

———————————————————————————————————————————————–

Gate 2 to source breakdown voltage ±10 = ±10 µA,

—

(BR)G2SS

= V

= 0

G1S

———————————————————————————————————————————————–

Gate 1 cutoff current

—

±100 nA

= ±8 V,

G1SS

G1S

G2S

= V

= 0

———————————————————————————————————————————————–

Gate 2 cutoff current

—

±100 nA

= ±8 V,

G2SS

G2S

G1S

= V

= 0

———————————————————————————————————————————————–

Drain current

—

= 6 V, V

= 0,

DSS

G1S

= 3 V

G2S

———————————————————————————————————————————————–

Gate 1 to source cutoff voltage –0.1 +1.0 = 10 V, V = 3 V,

—

G1S(off)

G2S

= 100 µA

———————————————————————————————————————————————–

Gate 2 to source cutoff voltage –0.1 +1.0 = 10 V, V = 3 V,

—

G2S(off)

G1S

= 100 µA

———————————————————————————————————————————————–

Forward transfer admittance |y | 17 22.6 mS = 6 V, V = 3 V,

—

G2S

= 10 mA, f = 1 kHz

———————————————————————————————————————————————–

Input capacitance Ciss 2.4 3.4 4.4 pF = 6 V, V = 3 V,

———————————————————————————————————– I = 10 mA, f = 1 MHz

G2S

Output capacitance

———————————————————————————————————–

Reverse transfer capacitance Crss 0.021 0.05 pF

———————————————————————————————————————————————–

Power gain PG 24 27.2 dB = 6 V, V = 3 V,

———————————————————————————————————– I = 10 mA, f = 200 MHz

Coss

0.7

1.25 2.0

—

G2S

Noise figure

———————————————————————————————————————————————–

Power gain PG 10 14.1 dB = 6 V, V = 3 V,

———————————————————————————————————– I = 10 mA, f = 900 MHz

—

1.54 2.5

—

G2S

Noise figure

—

4.15

———————————————————————————————————————————————–

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