3SK237 [ETC]
;
| 型号： | 3SK237 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总4页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3SK237
Silicon N–Channel Dual Gate MOSFET
Application
CMPAK-4
UHF/VHF RF amplifier
Features
2
• High gain and low niose
• Capable of low voltage operation
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
12
V
DS
———————————————————————————————————————————
Gate1 to source voltage
V
±10
V
G1S
———————————————————————————————————————————
Gate2 to source voltage
V
±10
V
G2S
———————————————————————————————————————————
Drain current
I
35
mA
D
———————————————————————————————————————————
Channel power dissipation
P
100
mW
ch
———————————————————————————————————————————
Channel temperature
Tch
125
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +125
°C
———————————————————————————————————————————
Marking is “XY”.
3SK237
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source
V
12
—
—
V
I
= 200 µA, V
= –5 V,
(BR)DSX
D
G1S
breakdown voltage
V
= –5 V
G2S
———————————————————————————————————————————
Gate1 to source
V
±10
—
—
V
I
= ±10 µA,
(BR)G1SS
G1
breakdown voltage
V
= V
= 0
G2S
DS
———————————————————————————————————————————
Gate2 to source
V
±10
—
—
V
I
= ±10 µA,
(BR)G2SS
G2
breakdown voltage
V
= V
= 0
G1S
DS
———————————————————————————————————————————
Gate1 leakage
current
I
—
—
±100
nA
V
V
= ±8 V,
G1SS
G1S
G2S
= V
= 0
DS
———————————————————————————————————————————
Gate2 leakage
current
I
—
—
±100
nA
V
V
= ±8 V,
G2SS
G2S
G1S
= V
= 0
DS
———————————————————————————————————————————
Drain current
I
0
—
1
mA
V
= 6 V, V
= 0,
DSS
DS
G1S
V
= 3 V
G2S
———————————————————————————————————————————
Gate1 to source
V
–0.1
—
+1.0
V
V
= 10 V, V
= 3V,
G1S(off)
DS
G2S
cutoff voltage
I
= 100 µA
D
———————————————————————————————————————————
Gate2 to source
V
–0.1
—
+1.0
V
V
= 10 V, V
= 3V,
G2S(off)
DS
G1S
cutoff voltage
I
= 100 µA
D
———————————————————————————————————————————
Forward transfer
|y |
17
22.6
—
mS
V
= 6V, V
= 3 V,
fs
DS
G2S
admittance
I
= 10 mA, f = 1 kHz
D
———————————————————————————————————————————
Input capacitance
Ciss
2.4
3.4
4.4
pF
V
= 6 V,
DS
——————————————————————————————
V
= 3 V,I = 10 mA,
D
G2S
Output capacitance
Coss
0.7
1.25
2.0
pF
f = 1 MHz
——————————————————————————————
Reverse transfer
Crss
—
0.021
0.05
pF
capacitance
———————————————————————————————————————————
Power gain
PG
24
27.2
—
dB
V
= 6 V, V
= 3 V,
DS
G2S
——————————————————————————————
I = 10 mA, f = 200 MHz
D
Noise figure
NF
—
1.54
2.5
dB
———————————————————————————————————————————
Power gain
PG
10
14.1
—
dB
V
= 6 V, V
= 3 V,
DS
G2S
——————————————————————————————
I = 10 mA, f = 900 MHz
D
Noise figure
NF
—
4.15
6
dB
———————————————————————————————————————————
3SK237
Maximum channel power dissipation curve
200
Typical output characteristics
20
16
12
8
V
= 3 V
G2S
1.2 V
150
100
50
1.0 V
0.8 V
0.6 V
4
V
G1S
= 0.4 V
0
2
4
6
8
DS
10
(V)
0
100
150
200
50
Drain to Source Voltage V
Ambient Temperature Ta (°C)
Drain current vs. Gate1 to source voltage
20
Drain current vs. Gate2 to source voltage
20
V
= 6 V
DS
2 V
3 V
V
= 6 V
DS
16
12
8
16
12
8
3 V
1.5 V
2 V
1.5 V
1 V
1 V
4
4
V
G2S
= 0.5 V
V
= 0.5 V
3
G1S
0
1
2
4
5
0
1
2
3
4
5
Gate1 to Source Voltage V
(V)
Gate2 to Source Voltage V
(V)
G1S
G2S
3SK237
Forward transfer admittance
vs. gate1 to source voltage
Power gain vs. drain current
40
32
24
16
8
40
V
= 6 V
DS
f = 1 kHz
32
24
16
8
V
= 3 V
G2S
2.5 V
2 V
1.5 V
V
V
= 6 V
DS
1 V
= 3 V
G2S
0.5 V
0.8
f = 200 MHz
0
0.4
1.2
1.6
2
0
8
12
16 20
4
Gate1 to Source Voltage V
(V)
G1S
Drain Current
I
(mA)
D
Noise figure vs. drain current
5
4
3
2
1
V
V
= 6 V
DS
= 3 V
G2S
f = 200 MHz
0
4
8
12
16
20
Drain Current
I
(mA)
D
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