66095-XX1 [ETC]
NPN-OUTPUT DC-INPUT OPTOCOUPLER ; NPN输出DC- INPUT光电耦合器\n型号: | 66095-XX1 |
厂家: | ETC |
描述: | NPN-OUTPUT DC-INPUT OPTOCOUPLER
|
文件: | 总2页 (文件大小:22K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
66095
MINIATURE LCC OPTOCOUPLER
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Applications:
•
•
•
•
Electrically similar to 4N47, 4N48, or 4N49
Standard and screened versions available
Hermetically sealed 4 pin LCC
•
•
•
•
High density surface mount circuits
Ground loop isolation
Feedback controls
High-voltage electrical isolation…1kV rating
General purpose switching circuits
DESCRIPTION
The 66095 series optocouplers consist of an infrared LED and a silicon phototransistor in a 4 pin hermetically sealed
leadless chip carrier. The 66095 is electrically similar to the 4N47, 4N48, or 4N49 series optocouplers, and is available in
standard and screened versions. The 66095 miniature LCC is ideal for surface mount applications where board space is
limited.
ABSOLUTE MAXIMUM RATINGS
Input-to-Output Voltage...................................................................................................................................................... ± 1 KV
Collector-Emitter Voltage .......................................................................................................................................................40 V
(This value applies with the input-diode current equal to zero)
Input Diode Reverse Voltage...................................................................................................................................................2 V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature ........................................................40 mA
(Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C)
Continuous Collector Current.............................................................................................................................................50 mA
Peak Diode Current…..(This Value applies for tw < 1µs, PRR < 300 pps)..............................................................................1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature .................................................... 300mW
(Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C)
Operating and Storage Free-Air Temperature Range....................................................................................... -55°C to +125°C
Lead Temperature 1.6mm (1/16 inch) from Case for 10 seconds .....................................................................................245°C
Package Dimensions
Schematic Diagram
0.225 [5.72]
0.215 [5.46]
0.075 [1.91]
0.061 [1.55]
0.155 [1.40]
0.145 [3.68]
PIN 1
A
3
C
1
IDENTIFIER
0.048 [1.22]
0.032 [0.81]
3 PL
2
3
0.028 [0.17]
0.022 [0.56]
1
4
0.055 [1.40]
0.045 [1.14]
K
2
E
4
0.088 [2.24]
0.072 [1.83]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
66095
MINATURE LCC OPTOCOUPLER, Continued
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
NOTE
Input Diode Static Reverse Current
I
R
100
µA
V = 2V
R
Input Diode Static Forward Voltage
-55°C
V
F
1.3
1.3
1.3
1.5
1.5
1.5
1.7
1.7
1.7
V
V
V
+25°C
I = 10mA
F
+100°C
OUTPUT TRANSISTOR
TA = 25°C unless otherwise specified.
Collector-Emitter Breakdown Voltage
V
40
V
I = 1mA, I = 0
C F
(BR)CEO
COUPLED CHARACTERISTICS
TA = 25°C unless otherwise specified.
On State Collector Current
-XX1
-XX2
-XX3
-XX1
-XX2
-XX3
-XX1
-XX2
-XX3
0.5
1
-
Ta = +25°C
I
I
I
5
mA
mA
V
= 5V, I = 1mA
F
C(ON)
C(ON)
C(ON)
CE
2
10
On State Collector Current
Ta = -55°C
0.7
1.4
2.8
0.5
1.0
2.0
V
= 5V, I = 2mA
F
CE
On State Collector Current
Ta = +100°C
mA
nA
µA
V
= 5V, I = 2mA
2
CE
F
Off State Collector Current
I
100
100
V
= 20V, I = 0mA
C(OFF)
C(OFF)
CE F
Off State Collector Current, Ta = 100°C
Collector-Emitter Saturation Voltage
I
V
= 20V, I = 0mA
CE F
-X01
-X02
-X03
V
V
V
0.3
0.3
0.3
V
V
V
I = 2mA, I = 0.5mA
F C
CE(SAT)
CE(SAT)
CE(SAT)
I
= 2mA, I = 1mA
C
F
F
I
= 2mA, I = 2mA
C
11
Input to Output Resistance
Input to Output Capacitance
R
10
Ω
V
= 1kV
1
1
IO
IO
IN-OUT
C
2.5
5
pF
F = 1MHz, V
= 0
IN-OUT
Rise Time (Phototransistor Operation)
or
-XX1
-XX2
-XX3
t
10
10
10
20
25
25
r
or
µs
V
= 10V, I = 5mA,
CC C
Fall Time
t
R = 100Ω
L
f
NOTES:
1.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2.
This parameter must be measured using pulse techniques. t = 100 µs, duty cycle ≤1%.
w
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Input Current, Low Level
SYMBOL
MIN
MAX
UNITS
µA
I
FL
0
100
2
Input Current, High Level
Supply Voltage
I
1
mA
V
FH
V
CC
5.0
-55
20
Operating Temperature
T
A
125
°C
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
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