74ACT10MTR [ETC]

Triple 3-input NAND Gate ; 三路3输入与非门\n
74ACT10MTR
型号: 74ACT10MTR
厂家: ETC    ETC
描述:

Triple 3-input NAND Gate
三路3输入与非门\n

触发器 逻辑集成电路 光电二极管 栅
文件: 总8页 (文件大小:61K)
中文:  中文翻译
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74ACT10  
TRIPLE 3-INPUT NAND GATE  
HIGH SPEED: t = 4.5ns (TYP.) at V = 5V  
PD CC  
LOW POWER DISSIPATION:  
I
= 4µA(MAX.) at T =25°C  
CC  
A
COMPATIBLE WITH TTL OUTPUTS  
= 2V (MIN.), V = 0.8V (MAX.)  
50TRANSMISSION LINE DRIVING  
V
IH  
IL  
DIP  
SOP  
TSSOP  
T & R  
CAPABILITY  
SYMMETRICAL OUTPUT IMPEDANCE:  
|I | = I = 24mA (MIN)  
OH  
OL  
BALANCED PROPAGATION DELAYS:  
ORDER CODES  
PACKAGE  
t
t
PLH  
PHL  
TUBE  
OPERATING VOLTAGE RANGE:  
(OPR) = 4.5V to 5.5V  
DIP  
SOP  
74ACT10B  
74ACT10M  
V
CC  
74ACT10MTR  
74ACT10TTR  
PIN AND FUNCTION COMPATIBLE WITH  
74 SERIES 10  
IMPROVED LATCH-UP IMMUNITY  
TSSOP  
The device is designed to interface directly High  
Speed CMOS systems with TTL, NMOS and  
CMOS output voltage levels.  
All inputs and outputs are equipped with protec-  
tion circuits against static discharge, giving them  
2KV ESD immunity and transient excess voltage.  
DESCRIPTION  
The 74ACT10 is an advanced high-speed CMOS  
TRIPLE 3-INPUT NAND GATE fabricated with  
sub-micron silicon gate and double-layer metal  
2
wiring C MOS tecnology.  
The internal circuit is composed of 3 stages  
including buffer output, which enables high noise  
immunity and stable output.  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
April 2001  
1/8  
74ACT10  
INPUT AND OUTPUT EQUIVALENT CIRCUIT  
PIN DESCRIPTION  
PIN No  
SYMBOL  
NAME AND FUNCTION  
1, 3, 9  
2, 4, 10  
13, 5, 11  
12, 6, 8  
7
1A to 3A  
1B to 3B  
1C to 3C  
1Y to 3Y  
GND  
Data Inputs  
Data Inputs  
Data Inputs  
Data Outputs  
Ground (0V)  
V
14  
Positive Supply Voltage  
CC  
TRUTH TABLE  
A
B
C
Y
L
X
X
X
L
X
X
L
H
H
H
L
X
H
H
H
X : Don’t Care  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
-0.5 to +7  
Unit  
V
Supply Voltage  
V
V
CC  
V
DC Input Voltage  
-0.5 to V  
+ 0.5  
I
CC  
CC  
V
DC Output Voltage  
DC Input Diode Current  
DC Output Diode Current  
DC Output Current  
-0.5 to V  
+ 0.5  
V
O
I
± 20  
± 20  
mA  
mA  
mA  
mA  
°C  
°C  
IK  
I
OK  
I
± 50  
O
I
or I  
DC V  
or Ground Current  
CC  
± 150  
CC  
GND  
T
Storage Temperature  
-65 to +150  
300  
stg  
T
Lead Temperature (10 sec)  
L
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is  
not implied.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Value  
Unit  
V
Supply Voltage  
4.5 to 5.5  
V
V
CC  
V
Input Voltage  
0 to V  
I
CC  
V
Output Voltage  
0 to V  
V
O
CC  
T
Operating Temperature  
Input Rise and Fall Time V  
-55 to 125  
8
°C  
ns/V  
op  
= 4.5 to 5.5V (note 1)  
dt/dv  
CC  
1) V from 0.8V to 2.0V  
IN  
2/8  
74ACT10  
DC SPECIFICATIONS  
Test Condition  
Value  
-40 to 85°C -55 to 125°C Unit  
Min. Typ. Max. Min. Max. Min. Max.  
T
= 25°C  
Symbol  
Parameter  
A
V
CC  
(V)  
V
High Level Input  
Voltage  
4.5  
5.5  
4.5  
5.5  
4.5  
5.5  
4.5  
5.5  
4.5  
V
V
= 0.1 V or  
O
2.0  
2.0  
1.5  
1.5  
2.0  
2.0  
2.0  
2.0  
IH  
V
-0.1V  
V
V
CC  
V
Low Level Input  
Voltage  
= 0.1 V or  
O
1.5  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
IL  
V
-0.1V  
1.5  
CC  
V
High Level Output  
Voltage  
I =-50 µA  
4.4  
5.4  
4.49  
5.49  
4.4  
5.4  
4.4  
5.4  
3.7  
4.7  
OH  
O
I =-50 µA  
O
I =-24 mA  
3.86  
4.86  
3.76  
4.76  
O
I =-24 mA  
O
V
Low Level Output  
Voltage  
I =50 µA  
0.001 0.1  
0.001 0.1  
0.36  
0.1  
0.1  
0.1  
0.1  
0.5  
0.5  
OL  
O
V
I =50 µA  
5.5  
4.5  
5.5  
O
I =24 mA  
0.44  
0.44  
O
I =24 mA  
0.36  
O
I
Input Leakage Cur-  
rent  
I
V = V  
or GND  
CC  
5.5  
5.5  
5.5  
± 0.1  
± 1  
1.5  
40  
± 1  
1.6  
80  
µA  
mA  
µA  
I
I
Max I /Input  
V = V - 2.1V  
0.6  
CCT  
CC  
I
CC  
I
Quiescent Supply  
Current  
CC  
V = V  
or GND  
CC  
4
I
I
V
= 1.65 V max  
= 3.85 V min  
75  
50  
mA  
mA  
OLD  
OLD  
Dynamic Output  
Current (note 1, 2)  
5.5  
I
V
OHD  
-75  
-50  
OHD  
1) Maximum test duration 2ms, one output loaded at time  
2) Incident wave switching is guaranteed on trasmission lines with impedances as low as 50  
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, R = 500 , Input t = t = 3ns)  
L
L
r
f
Test Condition  
Value  
-40 to 85°C -55 to 125°C Unit  
Min. Typ. Max. Min. Max. Min. Max.  
T
= 25°C  
Symbol  
Parameter  
A
V
CC  
(V)  
t
t
Propagation Delay  
Time  
PLH PHL  
(*)  
1.5  
4.5  
9.0  
1.0  
10.0  
1.0  
10.0  
ns  
5.0  
(*) Voltage range is 5.0V ± 0.5V  
CAPACITIVE CHARACTERISTICS  
Test Condition  
Value  
T
= 25°C  
Symbol  
Parameter  
-40 to 85°C -55 to 125°C Unit  
A
V
CC  
(V)  
Min. Typ. Max. Min. Max. Min. Max.  
C
Input Capacitance  
5.0  
4.0  
pF  
pF  
IN  
C
Power Dissipation  
Capacitance (note  
1)  
PD  
f
= 10MHz  
5.0  
37.0  
IN  
1) C is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without  
PD  
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I  
= C x V x f + I /3 (per gate)  
PD CC IN CC  
CC(opr)  
3/8  
74ACT10  
TEST CIRCUIT  
C
R
R
= 50pF or equivalent (includes jig and probe capacitance)  
L
L
T
= R = 500or equivalent  
1
= Z  
of pulse generator (typically 50)  
OUT  
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)  
4/8  
74ACT10  
Plastic DIP-14 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
0.51  
1.39  
TYP.  
MAX.  
MIN.  
0.020  
0.055  
MAX.  
a1  
B
b
1.65  
0.065  
0.5  
0.020  
0.010  
b1  
D
E
e
0.25  
20  
0.787  
8.5  
2.54  
15.24  
0.335  
0.100  
0.600  
e3  
F
7.1  
5.1  
0.280  
0.201  
I
L
3.3  
0.130  
Z
1.27  
2.54  
0.050  
0.100  
P001A  
5/8  
74ACT10  
SO-14 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.2  
MIN.  
MAX.  
0.068  
0.007  
0.064  
0.018  
0.010  
A
a1  
a2  
b
0.1  
0.003  
1.65  
0.46  
0.25  
0.35  
0.19  
0.013  
0.007  
b1  
C
0.5  
0.019  
c1  
D
45 (typ.)  
8.55  
5.8  
8.75  
6.2  
0.336  
0.228  
0.344  
0.244  
E
e
1.27  
7.62  
0.050  
0.300  
e3  
F
3.8  
4.6  
0.5  
4.0  
5.3  
0.149  
0.181  
0.019  
0.157  
0.208  
0.050  
0.026  
G
L
1.27  
0.68  
M
S
8 (max.)  
P013G  
6/8  
74ACT10  
TSSOP14 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.1  
MIN.  
MAX.  
0.433  
0.006  
0.374  
0.0118  
0.0079  
0.201  
0.256  
0.176  
A
A1  
A2  
b
0.05  
0.85  
0.19  
0.09  
4.9  
0.10  
0.9  
0.15  
0.95  
0.30  
0.20  
5.1  
0.002  
0.335  
0.0075  
0.0035  
0.193  
0.246  
0.169  
0.004  
0.354  
c
D
5
6.4  
0.197  
0.252  
E
6.25  
4.3  
6.5  
E1  
e
4.4  
4.48  
0.173  
0.65 BSC  
4o  
0.0256 BSC  
4o  
K
0o  
8o  
0o  
8o  
L
0.50  
0.60  
0.70  
0.020  
0.024  
0.028  
A2  
A
K
L
b
e
A1  
c
E
D
E1  
PIN 1 IDENTIFICATION  
1
7/8  
74ACT10  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
2001 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom  
http://www.st.com  
8/8  

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